Abstract: The present invention provides a sputtering target which has low risk to the human body, and which is able to be suppressed in the occurrence of a crack even in cases where sputtering is carried out at a high output power for a long period of time. A sputtering target contains Zn as a main component, contains specific metals including Zr in specific compositions, and contains a complex oxide of Zr.

Abstract: Provided is a sputtering target that can form a magnetic film having both good magnetic separation between magnetic grains and high coercive force at the same time; a magnetic film; and a method for producing a magnetic film. The sputtering target according to the present invention comprises: 1 at. % or more of Zn, a part or all of Zn forming a complex oxide(s) of Zn—Ti—O and/or Zn—Si—O; and 45 at. % or less of Pt, the balance being Co and inevitable impurities, the atomic percentage being based on an atomic ratio.

Abstract: A chamber includes a target (16) and a magnetron (50) disposed over the target (16). The magnetron (50) includes a plurality of magnets (52, 54). The magnetron (50) has a longitudinal dimension and a lateral dimension. The longitudinal dimension of the magnetron (50) is tilted with respect to the target (16) so the distances between magnets (52, 54) and the target (16) vary. As the magnetron (50) rotates during operation, the strength of the magnetic field produced by the magnetron (50) is an average of the various strengths of magnetic fields produced by the magnets (52, 54). The averaging of the strengths of the magnetic fields leads to uniform film properties and uniform target erosion.

Abstract: Methods and apparatus for processing substrates are provided herein. For example, a magnet to target spacing system configured for use with an apparatus for processing a substrate comprises a sensor configured to provide a signal corresponding to a distance between a front of a magnet and a back of a target while rotating the magnet with respect to the target and a magnet controller configured to control the distance between the front of the magnet and the back of the target based upon the signal provided by the sensor.

Abstract: A process for producing a W—Ni sputtering target includes providing the sputtering target with 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% by area on average of intermetallic phases measured at a target material cross section.

Abstract: A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden.

Abstract: A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

Abstract: A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.

Abstract: An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios satisfying formulae (1) to (3): 0.01?Ga/(In+Ga+Sn)?0.30 . . . (1); 0.01?Sn/(In+Ga+Sn)?0.40 . . . (2); and 0.55?In/(In+Ga+Sn)?0.98 . . . (3), and Al at an atomic ratio satisfying a formula (4): 0.05?Al/(In+Ga+Sn+Al)?0.30 . . . (4).

Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Abstract: A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

Abstract: A processing system is provided, including a vacuum enclosure having a plurality of process windows and a continuous track positioned therein; a plurality of processing chambers attached sidewalls of the vacuum enclosures, each processing chamber about one of the process windows; a loadlock attached at one end of the vacuum enclosure and having a loading track positioned therein; at least one gate valve separating the loadlock from the vacuum enclosure; a plurality of substrate carriers configured to travel on the continuous track and the loading track; at least one track exchanger positioned within the vacuum enclosure, the track exchangers movable between a first position, wherein substrate carriers are made to continuously move on the continuous track, and a second position wherein the substrate carriers are made to transfer between the continuous track and the loading track.

Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Abstract: Disclosed are a liner assembly for vacuum treatment apparatuses and a vacuum treatment apparatus, wherein the liner assembly for vacuum treatment apparatuses comprises: an annular liner including a sidewall protection ring and a support ring which are interconnected, the outer diameter of the support ring being greater than that of the sidewall protection ring, the annular liner enclosing a treating space; and a gas channel provided in the support ring, the gas channel communicating with the treating space. The liner assembly for vacuum treatment apparatuses offer an improved performance.

Abstract: A deposition system, and a method of operation thereof are disclosed. The deposition system comprises a cathode assembly comprising a rotating magnet assembly including a plurality of outer peripheral magnets surrounding an inner peripheral magnet.

Abstract: Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Abstract: Apparatus that forms low resistivity tungsten film on substrates. In some embodiments, the apparatus may provide reduced resistivity of tungsten by being configured to generate a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz, apply bias power at frequency of approximately 13.56 MHz to a substrate, and sputter a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a <110> crystalline orientation plane approximately parallel to a top surface of the substrate.

Abstract: The present invention resides in the unifying idea of synchronizing a positive voltage pulse supplied to an electrically conductive or ferromagnetic tube and a exciting negative voltage pulse on a hollow cathode induced on the background of a high-frequency capacitive discharge. In one embodiment, the invention relates to a method of generating low-temperature plasma in a vacuum chamber comprising a hollow cathode and an electrode, the method comprising the step of igniting the pulsed DC discharge in the hollow cathode wherein the positive voltage pulse at least partially overlaps with the negative voltage pulse, and the positive voltage pulse at least partially overlaps with the negative voltage pulse on the hollow cathode. In another embodiment, the present invention relates to a method of coating the inner walls of hollow tubes which utilizes the above-mentioned low-temperature plasma generation process.

Abstract: A deposition apparatus, including: a substrate supporter, wherein a substrate is fixed to the substrate supporter; a target facing the substrate; a first magnet assembly disposed below the target and including a first magnet extending in a first direction and having a first length, and a second magnet at least partially surrounding the first magnet; and a second magnet assembly disposed below the target and spaced apart from the first magnet assembly in a second direction which is substantially perpendicular to the first direction, and including a first magnet extending in the first direction and having a second length greater than the first length, and a second magnet at least partially surrounding the first magnet, and wherein the second magnet of the first magnet assembly and the second magnet of the second magnet assembly have substantially the same length as each other in the first direction.