Abstract: The present disclosure relates to a semiconductor device manufacturing system. The semiconductor device manufacturing system can include a chamber and an ion source in the chamber. The ion source can include an outlet. The ion source can be configured to generate a particle beam. The semiconductor device manufacturing system can further include a grid structure proximate to the outlet of the ion source and configured to manipulate the particle beam. A first portion of the grid structure can be electrically insulated from a second portion of the grid structure.

Abstract: A time-of-flight mass spectrometry device includes an electrode to which a DC high voltage is applied in order to form an ion flight space and a high voltage power supply device that applies the high voltage to the electrode. The high voltage power supply device includes a high voltage generating circuit that generates the high voltage, and a voltage control circuit that is selectively set to a convergence responsiveness priority mode in which the high voltage generating circuit is controlled such that the high voltage has first convergence responsiveness and first stability or a stability priority mode in which the high voltage generating circuit is controlled such that the high voltage has second convergence responsiveness that is lower than the first convergence responsiveness and second stability that is higher than the first stability.

Abstract: A sample introduction system for a spectrometer comprises a desolvation region that receives or generates sample ions from a solvent matrix and removes at least some of the solvent matrix from the sample ions. A separation chamber downstream of the desolvation region has a separation chamber inlet communicating with the desolvation region, for receiving the desolvated sample ions along with non-ionised solvent and solvent ion vapours. The separation chamber has electrodes for generating an electric field within the separation chamber, defining a first flow path for sample ions between the separation chamber inlet and a separation chamber outlet. Unwanted solvent ions and non-ionised solvent vapours are directed away from the separation chamber outlet. The sample introduction system has a reaction chamber with an inlet communicating with the separation chamber outlet, for receiving the sample ions from the separation chamber and for decomposing the received ions into smaller products.

Abstract: A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

Abstract: A method is disclosed comprising: trapping ions in an ion trap (40); applying a first force on the ions within the ion trap in a first direction, said force having a magnitude that is dependent upon the value of a physicochemical property of the ions; applying a second force on these ions in the opposite direction so that the ions separate according to the physicochemical property value as a result of the first and second forces; and then pulsing or driving ions out of one or more regions of the ion trap.

Abstract: An inspection apparatus for adjusting a working height for a substrate for multiple target heights is disclosed. The inspection apparatus includes a radiation source configured to provide a radiation beam and a beam splitter configured to split the radiation beam into multiple beamlets that each reflect off a substrate. Each beamlet contains light of multiple wavelengths. The inspection apparatus includes multiple light reflecting components, wherein each light reflecting component is associated with one of the beamlets reflecting off the substrate and is configured to support a different target height for the substrate by detecting a height or a levelness of the substrate based on the beamlet reflecting off the substrate.

Abstract: An object of the invention is to acquire a high-quality image while maintaining an improvement in throughput of image acquisition (measurement (length measurement)). The present disclosure provides a charged particle beam system including a charged particle beam device and a computer system configured to control the charged particle beam device. The charged particle beam device includes an objective lens, a sample stage, and a backscattered electron detector that is disposed between the objective lens and the sample stage and that adjusts a focus of a charged particle beam with which a sample is irradiated. The computer system adjusts a value of an electric field on the sample in accordance with a change in a voltage applied to the backscattered electron detector.

Abstract: A system and method of a tilt-column electron beam imaging system is disclosed. The system may include an imaging sub-system. The imaging sub-system may include a plurality of electron beam sources configured to generate a plurality of beamlets. The imaging sub-system may further include a plurality of tilt-illumination columns, where a respective tilt-illumination column is configured to receive a respective beamlet from a respective electron beam source. For the system and method, a first tilt axis of a first tilt-illumination column may be orientated along a first angle and at least one additional tilt axis of at least one additional tilt-illumination column may be orientated along at least one additional angle different from the first angle, where each of the plurality of beamlets pass through a first common crossover volume.

Abstract: A cathode assembly for emitting charged particles, used in for example an electron gun as source for generating an electron beam is provided. The cathode assembly has a cathode including an emitting member and a carrier. The emitting member is mounted in the carrier, and the carrier is electrically connected to a holder. The cathode is heated by irradiation from an external source, whereby the emitting member emits charged particles from an emitting surface at an emitting temperature. The connection between the carrier and the holder provides a thermal barrier for reducing the amount of thermal energy transferred from the cathode to the holder.

Abstract: A desorber for a spectrometer, comprising a housing, which has supply lines and discharge lines for a sample carrier gas, together with a closable opening, and an induction unit arranged in the housing, wherein the induction unit comprises a high-permeability and electrically insulating coil carrier, a coil arranged in the coil carrier, a high-permeability sample carrier that can be removed via the closable opening, wherein the sample carrier is designed as an inductive heating element, for purposes of heating a substance to be desorbed, which is applied to the sample carrier, and the coil carrier and the coil are arranged spaced apart from the sample carrier by a gap, such that the magnetic flux, generated by an alternating current flowing in the coil, flows through the sample carrier via the coil carrier and the gap.

Abstract: The present disclosure pertains to a beam deflection device capable of properly deflecting a beam. The present disclosure provides a beam deflection device for deflecting a beam inside a charged particle beam device, said beam deflection device being provided with: one or more electrostatic deflectors (207, 208) each having a pair of electrodes disposed so as to face each other across a beam path in a first direction orthogonal to the beam path; and one or more magnetic deflectors (209) each having a pair of magnetic poles disposed so as to face each other across the beam path in a second direction orthogonal to the beam path and to the first direction. When viewed from an incident direction of the beam, the one or more electrostatic deflectors and the one or more magnetic deflectors are stacked along the beam path such that the pair of electrodes at least partially overlap with the pair of magnetic poles and with a gap between the pair of magnetic poles.

Abstract: Imaging systems comprising x-ray image reconstruction systems combined with optical imaging and/or tracking systems. In some embodiments, the imaging system may comprise an x-ray image reconstruction system configured to generate three-dimensional image data of at least an internal portion of a target object under a surface of the target object and a three-dimensional optical imaging system configured to reconstruct an image of at least a portion of the surface of the target object by generating surface three-dimensional image data. The three-dimensional optical imaging system may be registered to the x-ray tomosynthesis image reconstruction system such that three-dimensional image data from the x-ray tomosynthesis image reconstruction system and three-dimensional image data from the three-dimensional optical imaging system may be used as a constraint to improve image quality of an image of the target object.

Abstract: An ELIT includes voltage sources (1101), switches (1102), a first set of electrode plates (1110) aligned along a central axis, and a second set of electrode plates (1120) aligned along the central axis with the first set. A first group of plates (310, 320; 810, 820) of the first set and the second set is positioned to trap ions within a first path length (340, 940). A second group of plates (410, 420) of the first set and the second set is positioned to trap ions within a shorter second path length (440, 1040). The switches select the first path length by applying voltages from the voltage sources to the first set and the second set that cause the first group of plates to trap ions within the first path length. Alternatively, the switches can select the second path length by applying voltages that cause the second group of plates to trap ions within the second path length.

Abstract: The beamlets in a multi-beam microscopy system are aligned based on coefficients of a fitted aberration model. In particular, an illuminator for directing the beamlets towards the sample is adjusted based on the coefficients to correct the aberrations. The coefficients are obtained based on measured beamlets' positions in the sample plane.

Abstract: Apparatuses are disclosed having an ultraviolet lamp, a reflector system arranged to project light emitted from the lamp to a region 2-4 feet from a floor of a room in which the apparatus is arranged, and a mobile carriage with operational components for the apparatus. The apparatuses are configured such that the lamp is not moveable beyond vertical planes aligned with a casing of the carriage. Other apparatuses are disclosed having an ultraviolet lamp and configurations for moving the lamp relative to a structure of the apparatuses while the lamp is emitting light. Yet other apparatuses are disclosed having an ultraviolet lamp and a surrounding housing, a reflector to redirect light emitted from the lamp, an actuator for moving the reflector and the housing together relative to a structure supporting the lamp, and a rotator distinct from the actuator for rotating the reflector and housing relative to the structure.

Abstract: A mass selective ion trapping device includes a linear ion trap and a RF control circuitry. The ion trap includes a plurality of trap electrodes configured for generating a quadrupolar trapping field in a trap interior and for mass selective ejection of ions from the trap interior. The RF control circuitry is configured to apply a balanced AC voltage to the trap electrodes during a first period of time such that an AC voltage applied to a first pair of trap electrodes is of the same magnitude and of opposite sign to an AC voltage applied to a second pair of trap electrodes; apply unbalanced RF voltage to the second pair of trap electrodes during a second period of time; ramp the balanced AC voltage down and the unbalanced RF voltage up during a transition period; and eject ions from the linear ion trap after the second period of time.

Abstract: Analyzing a sidewall of a hole milled in a sample to determine thickness of a buried layer includes milling the hole in the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along the sidewall of the hole. After milling, the sidewall of the hole has a known slope angle. From a perspective relative to a surface of the sample, a distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. The thickness of the buried layer is determined using the known slope angle of the sidewall, the distance, and the angle relative to the surface of the sample.

Abstract: A laser-sustained broadband light source includes a gas containment structure and multiple jet nozzles. The jet nozzles are configured to direct multiple liquid jets of plasma-forming material in directions to collide with one another within the gas containment structure. The laser-sustained broadband light source further includes a laser pump source configured to generate an optical pump to sustain a plasma in a region of the gas containment structure at a collision point of the plurality of liquid jets and a light collector element configured to collect broadband light emitted from the plasma.

Abstract: Systems and methods of enhancing imaging resolution by reducing crosstalk between detection elements of a secondary charged-particle detector in a multi-beam apparatus are disclosed. The multi-beam apparatus may comprise an electro-optical system for projecting a plurality of secondary charged-particle beams from a sample onto a charged-particle detector. The electro-optical system may include a first pre-limit aperture plate comprising a first aperture configured to block peripheral charged-particles of the plurality of secondary charged-particle beams, and a beam-limit aperture array comprising a second aperture configured to trim the plurality of secondary charged-particle beams. The charged-particle detector may include a plurality of detection elements, wherein a detection element of the plurality of detection elements is associated with a corresponding trimmed beam of the plurality of secondary charged-particle beams.

Abstract: Various approaches are provided for contamination-free vacuum transfer of samples. As one example, an apparatus includes a compartment configured to store multiple samples held by a cartridge removably coupled to the compartment, a sample port for transferring the cartridge between a charged particle system and a position within the compartment, and a valve configured to seal the compartment at vacuum pressure during transport of the multiple samples between charged particle systems. In this way, samples such as lamellae may be transferred between charged particle systems while maintaining the samples at vacuum pressure, thereby reducing the possibility of sample contamination during sample transfer.