Abstract: Rotary traveling wave oscillators (RTWOs) with distributed stubs are provided. In certain embodiments, an RTWO includes segments that are implemented using distributed stubs to mitigate flicker noise upconversion arising from transmission line dispersion. For example, a distance between the distributed stubs can be selected to intentionally generate a phase difference between transmission line modes, thereby cancelling out phase shifts due to transmission line dispersion. In particular, each segment is subdivided into multiple transmission line sections with a maintaining amplifier electrically connected to one of the sections and a tuning capacitor array connected to adjacent transmission line sections.

Abstract: A resonator has a resonator body and a frame at least partially surrounding the resonator body, the resonator body being coupled to the frame by at least one tether. The resonator body, frame and at least one tether comprise silicon carbide. A plurality of interdigitated electrodes are disposed on the silicon carbide resonator body. The resonator body preferably comprises 6H silicon carbide and preferably has a crystalline c-axis oriented generally parallel to a thickness direction of the resonator body.

Abstract: An electronic component includes a support member, a piezoelectric film, and an interdigital transducer. The support member includes silicon as a primary component. The piezoelectric film is provided directly or indirectly on the support member. The interdigital transducer includes a plurality of electrode fingers. The plurality of electrode fingers are provided side by side separately from each other. The interdigital transducer is provided on the principal surface of the piezoelectric film. The film thickness of the piezoelectric film is about 3.5 ? or less, where ? denotes the wavelength of an acoustic wave determined by the electrode finger pitch of the interdigital transducer. In the support member, the high-impurity-concentration region is further from the piezoelectric film than the low-impurity-concentration region.

Abstract: Bulk acoustic wave (BAW) resonators, and particularly top electrodes with step arrangements for BAW resonators are disclosed. Top electrodes on piezoelectric layers are disclosed that include a border (BO) region with a dual-step arrangement where an inner step and an outer step are formed with increasing heights toward peripheral edges of the top electrode. Dielectric spacer layers may be provided between the outer steps and the piezoelectric layer. Passivation layers are disclosed that extend over the top electrode either to peripheral edges of the piezoelectric layer or that are inset from peripheral edges of the piezoelectric layer. Piezoelectric layers may be arranged with reduced thickness portions in areas that are uncovered by top electrodes. BAW resonators as disclosed herein are provided with high quality factors and suppression of spurious modes while also providing weakened BO modes that are shifted farther away from passbands of such BAW resonators.

Abstract: Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed.

Abstract: A piezoelectric structure is disclosed which includes a single crystal having piezoelectric coefficients d31 and d32 of opposite magnitude, such that when an alternating electric field is applied in the Z direction, the piezoelectric structure expands in one of the X and Y directions and contracts in the other of the X and Y direction, a first electrode coupled to the single crystal, and a second electrode coupled to the single crystal, wherein the alternating electric field is input to the single crystal through the first and second electrodes.

Abstract: A bulk acoustic wave (BAW) resonator includes a substrate defining a cavity, a bottom electrode disposed over the substrate and the cavity, a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer. The piezoelectric layer includes polycrystalline lithium niobate (LN) material or polycrystalline lithium tantalite (LT) material. The BAW resonator may further include an encapsulant layer formed on side and top surfaces of the piezoelectric layer. The encapsulant layer is configured to protect the LN material or the LT material of the piezoelectric layer from a release solvent previously applied to sacrificial material within the cavity in the substrate.

Abstract: A vibrator is provided that includes a substrate having a major surface defined in width and length directions and one or more electrodes formed at least in a substantial entire region of the major surface of the substrate in the length direction, and that performs, as main vibration, expansion-contraction vibration along the width direction in accordance with a voltage applied to the electrodes. Moreover, a holder surrounds at least a portion of the vibrator; and a holding arm connects the vibrator to the holder. Moreover, the vibrator has a width Wo in the width direction positioned at an end in the length direction and includes, to have a width Wm differing from the width Wo and positioned between a pair of ends opposing in the length direction, a variant portion at least one or more locations that is in a shape recessed or projecting in the width direction.

Abstract: A pulse width modulator PWM circuit and a corresponding method are presented. The PWM circuit receives a control signal and a clock signal. The PWM circuit generates an output signal based on the control signal and the clock signal. The output signal has a first or second signal value. The PWM circuit has a delay circuit to generate, by delaying the clock signal by a delay period, a first enable signal for setting the output signal to the first signal value. The PWM circuit has a ramp generator to generate a ramp signal based on the clock signal. The PWM circuit has a comparator to generate, by comparing the control signal with the ramp signal, a second enable signal for setting the output signal to the second signal value. By delaying the clock signal by the delay period, a minimum on-time of the output signal may be reduced.

Abstract: The present disclosure provides an oscillating circuit and an electronic device; the oscillating circuit includes a capacitor charging and discharging circuit unit, a voltage comparison circuit unit and a threshold voltage generation circuit unit; the oscillating circuit uses the capacitor charging and discharging and the hysteresis effect of the capacitor charging and discharging circuit unit to achieve oscillation based on the negative feedback regulation constituted by the voltage comparison circuit unit and the threshold voltage generation circuit unit, which is different from the traditional oscillating circuit based on capacitance and inductance; the oscillating circuit does not adopts inductors, has relatively low power consumption, and outputs oscillation signals with frequencies that vary with currents, and when the oscillating circuit is used to provide clock signals for the sensor, it can be integrated with a sensor signal processing circuit to realize the miniaturization and integration of the sen

Abstract: An acoustic wave device includes a high-acoustic-velocity support substrate, a low-acoustic-velocity film provided on the high-acoustic-velocity support substrate, a piezoelectric layer provided on the low-acoustic-velocity film, and an IDT electrode provided on the piezoelectric layer. An acoustic velocity of a bulk wave propagating through the high-acoustic-velocity support substrate is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer. An acoustic velocity of a bulk wave propagating through the low-acoustic-velocity film is lower than an acoustic velocity of a bulk wave propagating through the piezoelectric layer. The low-acoustic-velocity film has a first portion and a second portion that is located closer to the high-acoustic-velocity support substrate than the first portion. The first and second portions include the same or similar materials.

Abstract: An oscillator is comprising a plurality of resonators and a voltage bias circuit that applies voltages to the plurality of resonators. Each of the plurality of resonators has a negative resistance element. In the oscillator, the plurality of resonators are connected in parallel to the voltage bias circuit respectively via separate inductors.

Abstract: A low voltage, low frequency multi-level power converter capable of power conversion is disclosed. The power converter may include a low voltage, low frequency circuit that includes a plurality of phase-shifting inverters in series; a plurality of low voltage source inputs, and a plurality of phase-shifting inverters in series. Each of the plurality of phase-shifting inverters may be configured to receive at least one of the plurality of low voltage source inputs; and generate at least one square wave output. A semi-sine wave output may be derived from the generated at least one square wave output.

Abstract: A microelectromechanical system (MEMS) resonator includes a resonant semiconductor structure, drive electrode, sense electrode and electrically conductive shielding structure. The first drive electrode generates a time-varying electrostatic force that causes the resonant semiconductor structure to resonate mechanically, and the first sense electrode generates a timing signal in response to the mechanical resonance of the resonant semiconductor structure. The electrically conductive shielding structure is disposed between the first drive electrode and the first sense electrode to shield the first sense electrode from electric field lines emanating from the first drive electrode.

Abstract: An acoustic wave device includes a support substrate including a main surface including first and second regions adjacent to each other in a plan view; a multilayer body including an intermediate layer in the first region of the support substrate and a piezoelectric layer on the intermediate layer, and including a side surface; an IDT electrode on the piezoelectric layer of the multilayer body; and an insulating film in the second region of the support substrate to cover the side surface of the multilayer body. An angle defined between the main surface of the support substrate and the side surface of the multilayer body is a tilt angle, and the side surface of the multilayer body includes portions having different tilt angles at a portion covered with the insulating film.

Abstract: An ultrasonic device includes a base member including a first surface and a second surface different from the first surface, a vibration plate provided at the first surface of the base member, and a piezoelectric element provided at the vibration plate. The base member includes a hole formed from the first surface to the second surface, and a wall portion surrounding the hole. The vibration plate includes, when viewed in a direction from the first surface toward the second surface, a supporting portion overlapping the wall portion, and a blocking portion that overlaps the hole and blocks the hole. The piezoelectric element is laminated at the blocking portion. The supporting portion has a first Young's modulus. The blocking portion includes a first blocking portion having the first Young's modulus and a second blocking portion having a second Young's modulus smaller than the first Young's modulus.

Abstract: A micromachined tunable capacitor. A pair of first and second MEMS fabricated flexures are flexibly coupled to a piezo actuator drive element configured wherein a stress or strain induced by the piezo actuator drive element urges a first movable capacitor plate element a predetermined distance toward or away from a second capacitor plate element proportional to a predetermined voltage signal.

Abstract: A vibrator includes a vibration element having an excitation section which is provided with excitation electrodes, and which excites a thickness shear vibration, and a fixation section electrically coupled to at least one of the excitation electrodes, a vibration attenuator disposed on at least one of principal surfaces of the vibration element, and a support substrate having a coupling electrode which is electrically coupled to the fixation section, and which supports the vibration element, wherein the vibration attenuator is disposed at the fixation section side of the excitation electrodes, and at an outer circumferential edge side of the vibration element from the fixation section in a direction perpendicular to a direction in which the excitation electrodes and the fixation section are arranged side by side.

Abstract: An acoustic resonator structure is provided. The acoustic resonator structure includes an acoustic resonator configured to resonate in a first frequency to pass a radio frequency (RF) signal. However, the acoustic resonator may create an electrical capacitance outside the first frequency, which can cause the acoustic resonator to resonate at a second frequency in parallel to the first frequency, thus compromising performance of the acoustic resonator. In this regard, a passive acoustic circuit is provided in parallel to the acoustic resonator in the acoustic resonator structure. The passive acoustic circuit can be configured to resonate in the second frequency to cancel the electrical capacitance created by the acoustic resonator. As such, it may be possible to improve performance of the acoustic resonator without significantly increasing complexity and footprint of the acoustic resonator structure.

Abstract: A resonator is provided that includes a vibrating section that vibrates in a contour vibration mode, a frame that surrounds at least a portion of the vibrating section, supporting sections extending along a Y-axis direction and connecting the vibrating section and the frame. The vibrating section includes a through hole that extends along an X-axis direction perpendicular to the Y-axis direction such that a coupling section is disposed between the through hole and each of the supporting sections. The length SL of the through hole in the X-axis direction is longer than the length Sd of the coupling section in the Y-axis direction.