Abstract: A crystal oscillator circuit that can be controlled for fast start-up and for efficient operation is disclosed. The control includes adjusting a voltage applied to a body terminal of a transistor in order to control the amplification of the crystal oscillator. The amplification can be increased, relative to a motional resistance of the crystal oscillator, at start-up to reduce a start-up time necessary for oscillation. The amplification can also be decreased in order to maintain oscillation after start-up more efficiently. In some implementations, the transistor for control is a fully depleted silicon on insulator (FDSOI) transistor that accommodates a wide range of body bias voltages.

Abstract: In a crystal oscillator, a crystal resonator and an IC chip are hermetically sealed in a package. The crystal resonator includes: a crystal resonator plate including a first excitation electrode formed on a first main surface, and a second excitation electrode, which makes a pair with the first excitation electrode, formed on a second main surface; a first sealing member covering the first excitation electrode of the crystal resonator plate; and a second sealing member covering the second excitation electrode of the crystal resonator plate. A vibrating part including the first excitation electrode and the second excitation electrode of the crystal resonator plate is hermetically sealed by bonding the first sealing member to the crystal resonator plate, and the second sealing member to the crystal resonator plate.

Abstract: Hermeticity of an annular sealing bonding material to seal a vibrating part is improved. In the crystal resonator 10, a resonator-plate-side first bonding pattern 251 annularly formed on a crystal resonator plate 2 is bonded to a sealing-member-side first bonding pattern 321 annularly formed on a first sealing member 3, and a resonator-plate-side second bonding pattern 252 annularly formed on the crystal resonator plate 2 is bonded to a sealing-member-side second bonding pattern 421 annularly formed on a second sealing member 4. Thus, annular bonding materials 11a and 11b, which hermetically seal a vibrating part 22 causing piezoelectric resonance, are formed. Inner peripheral edge parts 111a and 111b and outer peripheral edge parts 112a and 112b of the bonding materials 11a and 11b are formed denser than intermediate parts 113a and 113b between the inner and outer peripheral edge parts 111a and 112a, and between the inner and outer peripheral edge parts 111b and 112b.

Abstract: An apparatus includes a first interface a second interface, a third interface and a converter. The first interface may be configured to exchange a high-voltage signal with a high-voltage battery of a vehicle. The second interface may be configured to receive a first low-voltage signal from a source external to the vehicle. The third interface may be configured to present a second low-voltage signal to a power rail of the vehicle. The converter may be configured to (i) generate the high-voltage signal by up-converting the first low-voltage signal while in an up-conversion mode to recharge the high-voltage battery of the vehicle and (ii) generate the second low-voltage signal on the power rail by down-converting the high-voltage signal received from the high-voltage battery while in a down-conversion mode.

Abstract: The present disclosure relates to a wafer-level packaged (WLP) bulk acoustic wave (BAW) device, which includes a BAW resonator and a WLP enclosure. The BAW resonator includes a piezoelectric layer with an interface opening, a bottom electrode lead underneath the interface opening, an interface structure extending over the interface opening and connected with the bottom electrode lead, a passivation layer with a passivation opening over the interface structure, and an oxide adhesion layer with an adhesion opening over the passivation layer. The WLP enclosure includes an outer wall directly residing over the oxide adhesion layer, and a through-WLP via encompassed by the outer wall and vertically aligned with the adhesion opening and the passivation opening. A portion of the interface structure is exposed to the through-WLP via through the adhesion opening and the passivation opening.

Abstract: An acoustic wave element which can be reduced in size and produced relatively easily, practically used without using harmful substances, and can suppress a surface acoustic wave propagation loss, which has an excellent temperature coefficient of frequency and a velocity dispersion characteristic, and with which an increase in the reflection coefficient of interdigital transducers can be suppressed, and a method for manufacturing the acoustic wave element are provided. The acoustic wave element includes a pair of electrodes provided on both surfaces of a piezoelectric substrate, and a dielectric film provided on a first surface of the piezoelectric substrate so as to cover the electrode. The acoustic wave element alternatively includes interdigital transducers provided on a first surface of the piezoelectric substrate, and a dielectric film provided on the interdigital transducers, a gap between the interdigital transducers, and/or a second surface of the piezoelectric substrate.

Abstract: Acoustic sensor devices and sensor systems are disclosed. An acoustic sensor device includes a piezoelectric plate having a front surface and a back surface. A floating back-side conductor pattern is formed on the back surface. A first and second front-side conductor patterns are formed on a portion of the front surface opposite the back-side conductor pattern. A sensing layer is formed over all or a portion of the floating back-side conductor pattern.

Abstract: A quartz crystal resonator unit that includes a quartz crystal resonator, a lid member and a base member defining an internal space that accommodates the quartz crystal resonator, and a sealing frame and a joining material joining the lid member and the base member to each other. In a plan view of a principal surface of the base member, the sealing frame and the joining material have a frame shape surrounding the quartz crystal resonator, and the frame shape has a uniform width.

Abstract: There is provided a dual-output microelectromechanical system (MEMS) resonator. The MEMS resonator can be operated selectively and concurrently in an in-plane mode of vibration and an out-of-plane mode of vibration to obtain respectively a first electrical signal having a first frequency, and a second electrical signal having a second frequency being less than the first frequency. The first and second electrical signals are mixed to obtain a third electrical signal having a third frequency, where the third frequency is proportional to a temperature of the MEMS resonator. The temperature is determined based on the third frequency. Values of the first and second frequencies can be adjusted based on the determined temperature to compensate for frequency deviations due to temperature deviations. There is also provided methods and systems for determining the temperature of the dual-output MEMS, for compensating the frequency, and a method of manufacturing the dual-output MEMS.

Abstract: A bulk-acoustic wave resonator is provided. The bulk-acoustic wave resonator comprises a substrate comprising an external connection electrode; a connection layer connected to the external connection electrode and disposed on the substrate; a first electrode disposed to cover at least a portion of the connection layer; a piezoelectric layer disposed to cover at least a portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The connection layer may be disposed to surround a cavity and may be connected to the first electrode and the second electrode.

Abstract: A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), a wiring level (M1, M2) is realized, which comprises structured conductor paths and which is connected via through-connections to the functional structure (FS).

Abstract: Main surface electrodes formed on main surfaces on front and back sides of vibrating arms are electrically coupled via through electrodes formed in a stem portion so as to penetrate through front and back surfaces thereof. One of the main surface electrodes of the vibrating arm is electrically coupled to side surface electrodes through a routing wiring formed by way of a crotch part between roots of the vibrating arms, and the one of the main surface electrodes is further electrically coupled to the other one of the main surface electrodes through the side surface electrodes.

Abstract: A resonator is provided that includes a vibration portion having a first and second electrodes, a piezoelectric film disposed therebetween and having a first face opposing the first electrode, and at least two temperature characteristic adjustment films formed to oppose the first face of the piezoelectric film with the first electrode interposed therebetween. Moreover, the resonator includes a frame that surrounds at least part of the vibration portion; and a holding arm connecting the vibration portion to the holding portion. The vibration portion includes a surface opposing the first face of the piezoelectric film and having first and second regions in which an average amount of displacement is larger than an average amount of displacement in the first region when the vibration portion vibrates.

Abstract: A piezoelectric resonator unit includes a piezoelectric substrate, first and second excitation electrodes, first and second connecting electrodes, and first and second exterior members. The first excitation electrode and first connecting electrode are disposed on a first main surface of the piezoelectric substrate and are electrically connected to each other. Similarly, the second excitation electrode and the second connecting electrode are disposed on a second main surface of the piezoelectric substrate and are electrically connected to each other. First and second exterior members bonded to the substrate with sealing members interposed. The first exterior member includes a first terminal portion formed in a shape that externally exposes at least part of the first connecting electrode. A first outer electrode covers the first terminal portion and the exposed portion of the first connecting electrode protruding from the first exterior member.

Abstract: A resonator that includes a substrate, an insulating film that is formed on the substrate, and vibration regions each of which is formed on the insulating film and includes lower electrodes that are formed on the insulating film, a piezoelectric film that is formed on the lower electrodes, and an upper electrode that is formed on the piezoelectric film. At least one lower electrode of the lower electrodes that are formed on the insulating film has an electric potential that differs from an electric potential of another lower electrode such that at least one vibration region vibrates in antiphase with another vibration region. Moreover, a package seals a resonator and includes the substrate, the insulating film, and the vibration regions and includes a ground terminal for grounding the substrate.

Abstract: A vibrator device includes a base; and a vibrator element including a quartz crystal vibrator element attached to the base via a first metal bump, in which the first metal bump is disposed on a straight line inclined within a range of +55° to +65° or ?65° to ?55° with respect to an X axis of the quartz crystal constituting the quartz crystal vibrator element in plan view seen from a direction in which the base and the quartz crystal vibrator element are arranged.

Abstract: A bulk acoustic wave resonator includes: a substrate; a first electrode disposed above the substrate; a piezoelectric layer disposed above at least a portion of the first electrode; and a second electrode disposed above at least a portion of the piezoelectric layer. A first gap is formed between the piezoelectric layer and one of the first and second electrodes. The first gap includes a first inner gap disposed in an active area of the bulk acoustic wave resonator, and having a first spacing distance between the piezoelectric layer and the one of the first and second electrodes, and a first outer gap disposed outwardly of the active area and having a second spacing distance, different than the first spacing distance, between the piezoelectric layer and the one of the first and second electrodes.

Abstract: Acoustic resonator devices are disclosed. An acoustic resonator device includes a plurality of cells electrically connected in parallel. Each cell includes an interdigital transducer (IDT) on a piezoelectric plate, the IDT having at least 15 and not more than 35 interleaved fingers.

Abstract: A multi-piece wiring substrate includes a matrix substrate including first and second insulating layers, and interconnection substrate regions arranged in a matrix. The matrix substrate includes dividing grooves opposing each other and disposed along boundaries between the interconnection substrate regions, and through-holes penetrating the matrix substrate in a thickness direction at positions where the dividing grooves are disposed. The inner surface conductor gradually decreases in thickness from a thick portion in a middle of the inner surface conductor, to thin portions disposed on a side of a boundary between the first and second insulating layers and on a first main surface side, and includes inclination portions each of which gradually increases in thickness from a boundary between corresponding one of the dividing grooves and the inner surface conductor to an inner surface of the inner surface conductor, in vertical sectional view.

Abstract: A resonator that includes a piezoelectric vibrator, a frame, and a first node generator between the piezoelectric vibrator and the frame. Moreover, a first connecting arm connects the first node generator to the piezoelectric vibrator that opposes the first, and a first holding arm connects the first node generator to a part of the frame that opposes the first node generator. The first node generator includes a width extending in a second direction, which is orthogonal to a first direction of the first connecting arm, that is a maximum width where the first node generator is closer to the first connecting arm than a center of the first node generator relative to the first direction. Moreover, the width of the first node generator gradually decreases from the maximum width as the first node generator extends towards the first holding arm.