Abstract: A gas supply device of supplying a gas into a processing space from a gas supply source includes a facing plate that faces the processing space and includes multiple through holes; multiple gas distribution plates; and a cover plate. The facing plate, the gas distribution plates, and the cover plate are stacked in sequence. In a surface, which faces the facing plate, of the gas distribution plate closest to the facing plate, multiple gas diffusion spaces including a first gas diffusion space and a second gas diffusion space are formed, and in each of the gas distribution plates, a first gas supply path through which a processing gas or an additional gas is supplied into the first gas diffusion space and a second gas supply path through which the processing gas or the additional gas is supplied into the second gas diffusion space are formed.

Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.

Abstract: The invention concerns a method of forming a graphene layer involving: heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas; and repeating a) and b) one or more times.

Abstract: A substrate processing apparatus is provided with a process module including a processing container, a rotary table installed within the processing container, the rotary table having a plurality of placing regions to receive substrates, and a process gas supply unit supplying a process gas to the placing regions, a load port in which a transfer container is placed, a dummy substrate receiving unit, a transfer chamber including a transfer mechanism delivering the product substrates or the dummy substrates between the transfer container or the dummy substrate receiving unit and the rotary table, a setting unit setting a placing region to which one of the product substrates is to be transferred, and a control unit outputting a control signal such that the dummy substrates are carried into the remaining placing regions.

Abstract: Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: A plasma reactor has an array of plural gas injectors arranged around a circular side wall that are individually controlled.

Abstract: An annular lid plate of a plasma reactor has upper and lower layers of gas distribution channels distributing gas along equal length paths from gas supply lines to respective gas distribution passages of a ceiling gas nozzle.

Abstract: An apparatus for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing, comprising a plurality of gas injectors for admitting a processing gas into an etching chamber. Each gas injector of the plurality of gas injectors is disposed along a track within the etching chamber and moveable along the track. Further, each gas injector is coupled with a throttling valve or nozzle to permit adjustment of processing gas flow rate. A method for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing includes performing a chemical deposition or etch using the plurality of moveable and adjustable gas injectors and measuring the critical dimension uniformity. Adjustments to the location of at least one gas injector or the processing gas flow rate to at least one gas injector are made to increase critical dimension uniformity.

Abstract: An equipment front end module interface of an equipment front end module including environmental controls. The equipment front end module interface includes a first mounting member configured to couple to a load lock assembly, and a flexible seal coupled to the first mounting member. The flexible seal provides sealing between the equipment front end module and the load lock assembly and also accommodates axial and other misalignment between the load lock assembly and the equipment front end module during assembly. Equipment front end modules including the equipment front end module interface and methods of assembling a load lock assembly to the equipment front end module using the equipment front end module interface are provided, as are other aspects.

Abstract: Apparatus for use in a substrate processing chamber are provided herein. In some embodiments, an indexed jet injector may include a body having a substantially cylindrical central volume, a gas input port disposed on a first surface of the body, a gas distribution channel formed in the body and fluidly coupled to the gas input port and to the cylindrical central volume, a gas distribution drum disposed within the cylindrical central volume and rotatably coupled to the body, the gas distribution drum having a plurality of jet channels formed through the gas distribution drum, and a plurality of indexer output ports formed on a second surface of the body, wherein each of the plurality of jet channels fluidly couple the gas input port to at least one of the plurality of indexer output ports at least once per 360° rotation of the gas distribution drum.

Abstract: Embodiments of a semiconductor processing apparatus are disclosed. The semiconductor processing apparatus includes a micro chamber for tightly accommodating and processing a semiconductor wafer. The micro chamber includes an upper chamber portion defining an upper working surface and a lower chamber portion defining a lower working surface. The upper chamber portion and the lower chamber portion are relatively movable between an open position for loading and removing the semiconductor wafer and a closed position for tightly accommodating the semiconductor wafer. The semiconductor processing apparatus adopts a modified column device, a lower chamber portion and a balance correction device to achieve easy operation and maintenance, better prevention of chemical processing fluid leakage, and corrosion-resistant design.

Abstract: Embodiments of the invention relate to a substrate processing apparatus. In one embodiment, a substrate processing apparatus includes a plurality of process units. The process unit includes a process chamber for processing a substrate, an exhaust conduit connected to the process chamber and an exhaust pump arranged in the path of the exhaust conduit. The substrate processing apparatus further includes a connecting conduit connected to the exhaust conduits of the process units in the upstream of the exhaust pump and a switching unit which switches an exhaust path of the process chamber to the other exhaust pump in the other process unit via the connecting conduit.

Abstract: There is disclosed a plasma enhanced chemical vapor deposition apparatus including a chamber in which plasma reaction is performed to provide a functional film to an object received therein, a pallet mechanically and electrically connected with the object, a conveyer to convey the pallet to an inside from an outside of the chamber, and a power supplier to supply an electric power to the pallet, the power supplier comprising a moving contact distant from the pallet when the pallet is conveyed and contacting with the pallet when the pallet is stopped.

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber housing may include a lid. The chamber may include a pedestal configured to support a substrate within a processing region of the chamber. The chamber may also include a first showerhead coupled with an electrical source. The first showerhead may be positioned within the semiconductor processing chamber between the lid and the processing region. The chamber may also include a first dielectric faceplate positioned within the semiconductor processing chamber between the first showerhead and the processing region. The chamber may include a second showerhead coupled with electrical ground and positioned within the semiconductor processing chamber between the first dielectric faceplate and the processing region.

Abstract: Provided is a deposition apparatus including a connection channel connecting a gas inflow channel and a gas outflow channel so as to increase cleaning efficiency by providing a portion of cleaning gas to the dead space of the gas inflow channel and controlling a flow of a cleaning gas.

Abstract: A device for processing wafer-shaped articles comprises a closed process chamber. The closed process chamber comprises a housing providing a gas-tight enclosure, a rotary chuck located within the closed process chamber and adapted to hold a wafer shaped article thereon, and an interior cover disposed within said closed process chamber. The interior cover is movable between a first position in which the rotary chuck communicates with an outer wall of the closed process chamber, and a second position in which the interior cover seals against an inner surface of the closed process chamber adjacent the rotary chuck to define a gas-tight inner process chamber.

Abstract: Embodiments of the present disclosure generally relate to a process chamber having a pre-heat ring for heating the process gas. In one embodiment, the process chamber includes a chamber body defining an interior processing region, a substrate support disposed within the chamber body, the substrate support having a substrate support surface for supporting a substrate, and a pre-heat ring positioned on a ring support disposed within the chamber body, wherein a portion of the pre-heat ring is tilted downwardly by a predetermined angle towards the gas exhaust side with respect to the substrate support surface to promote the purge gas flowing more through the gas exhaust side than the gas injection side.

Abstract: An apparatus for manufacturing a lithium-ion secondary cell negative-electrode carbon material by heat-treating carbon particles while causing the carbon particles to flow within a heat-treatment furnace, the apparatus having a heat-treatment furnace provided with a carbon-particle supply opening for supplying the carbon particles into the interior, and a negative-electrode carbon material recovery opening for taking out the negative-electrode carbon material from the interior and a cooling tank connected in an airtight manner to the negative-electrode carbon material recovery opening of the heat-treatment furnace, and provided with a cooling means.

Abstract: The film forming apparatus includes a mask member and a shield member. The mask member is made of a cylindrical insulation material that can expose inner surfaces of cylinder bores, and mask the inner surface of a crankcase. The shield member is made of a metal material disposed along an inner surface of the mask member.