Abstract: A semiconductor device is disclosed. The semiconductor device includes a fin-based structure formed on a substrate. The semiconductor device includes a plurality of first nanosheets, vertically spaced apart from one another, that are formed on the substrate. The semiconductor device includes a first source/drain (S/D) region electrically coupled to a first end of the fin-based structure. The semiconductor device includes a second S/D region electrically coupled to both of a second end of the fin-based structure and a first end of the plurality of first nanosheets. The semiconductor device includes a third S/D region electrically coupled to a second end of the plurality of first nanosheets. The fin-based structure has a first crystal lattice direction and the plurality of first nanosheets have a second crystal lattice direction, which is different from the first crystal lattice direction.

Abstract: A static random access memory (SRAM) includes a substrate having a first active region and a second active region adjacent to the first active region. A first gate structure is disposed on the substrate and across the first active region and the second active region. A second gate structure is adjacent to a first side of the first gate structure. A first lower contact structure is disposed on the first active region and adjacent to a second side of the first gate structure. A first upper contact structure is disposed on and in direct contact with the first lower contact structure. A top surface of the first lower contact structure and a sidewall of the first upper contact structure comprise a step profile therebetween.

Abstract: Some embodiments include apparatuses and methods having a substrate, a memory cell string including a body, a select gate located in a level of the apparatus and along a portion of the body, and control gates located in other levels of the apparatus and along other respective portions of the body. At least one of such apparatuses includes a conductive connection coupling the select gate or one of the control gates to a component (e.g., transistor) in the substrate. The connection can include a portion going through a portion of at least one of the control gates.

Abstract: A light detection and ranging (LIDAR) sensor system includes a circuit module. The circuit module includes a silicon substrate having a first thermal feature. The circuit module includes a III-V semiconductor substrate coupled to the silicon substrate, the III-V semiconductor substrate having a second thermal feature. The circuit board includes an optical device coupled to the III-V semiconductor substrate, the optical device configured to output a transmit beam. The circuit module further includes a plurality of vias disposed in a particular portion of the silicon substrate, where the particular portion corresponds to the III-V semiconductor substrate, at least one of the plurality of vias having a third thermal feature. The LIDAR system further includes a scanner configured to direct the transmit beam to an environment of the vehicle.

Abstract: A semiconductor device includes a transistor portion which includes a plurality of gate structure portions, and a diode portion which includes a cathode region in a lower surface of a semiconductor substrate. Each of the gate structure portions includes a gate trench portion, an emitter region of a first conductive type which is provided between an upper surface of the semiconductor substrate and a drift region to abut on the gate trench portion, and a base region of a second conductive type which is provided between the emitter region and the drift region to abut on the gate trench portion. A first threshold of the gate structure portion with a shortest distance to the cathode region in a top view is lower than a second threshold of the gate structure portion with a longest distance to the cathode region by 0.1 V or more and 1 V or less.

Abstract: A fabrication method for a substrate of a light-emitting device comprises: fabricating an organic photoresist layer on the surface of a substrate provided with a protruding structure, so that the organic photoresist layer covers the protruding structure, wherein by means of semi-exposing, developing and removing a portion of the thickness of a specific region of the organic photoresist layer, the specific region is a region of the organic photoresist layer that covers the protruding structure; and post-bake curing the remaining portion of the organic photoresist layer to form a planarization layer.

Abstract: A semiconductor device of embodiments includes: a semiconductor layer including a first trench, a second trench, a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type provided between a first face and the first semiconductor region, between the first trench and the second trench, and in contact with the second trench, a third semiconductor region of a first conductive type provided between the first trench and the second semiconductor region, a fourth semiconductor region of a second conductive type provided between the third semiconductor region and the first face, and a fifth semiconductor region of a second conductive type provided between the second semiconductor region and the first face, spaced from the fourth semiconductor region, in contact with the second trench; a first electrode on a first face side; and a second electrode on a second face side.

Abstract: A capacitor that can make a failure mode into an open mode even when a short circuit caused by insulation breakdown occurs in a dielectric layer is provided. The capacitor includes: a substrate; an MIM structure disposed on the Substrate, the MIM structure including a dielectric layer, a bottom electrode layer disposed on one side of the dielectric layer and composed of a first conductive material, and a top electrode layer disposed on the other side of the dielectric layer; a first external electrode disposed on the substrate; a second external electrode disposed on the substrate; and a connection conductor connecting between the bottom electrode layer and the first external electrode, the connection conductor including a first contact portion contacting the substrate.

Abstract: A semiconductor device includes a first impurity region on a substrate; a channel pattern protruding from an upper surface of the substrate, the channel pattern extending in a first direction substantially parallel to the upper surface of the substrate; a second impurity region on the channel pattern, the second impurity region covering an entire upper surface of the channel pattern; a gate structure on a sidewall of the channel pattern and the substrate adjacent to the channel pattern; a first contact pattern on the second impurity region; a second contact pattern that is electrically connected to the gate structure; and a spacer between the first contact pattern and the second contact pattern. The spacer completely surrounds the second contact pattern in plan view, and the first contact pattern partially surrounds the second contact pattern in plan view.

Abstract: Embodiments disclosed herein describe methods of forming semiconductor devices. The methods may include etching vias and trenches in a middle-of-line (MOL) layer that has a low-k dielectric layer, a sacrificial nitride layer, and a hard mask layer. The methods may also include depositing a thin nitride layer within the via trench, depositing a carbon layer on the thin nitride layer within the vias and trenches, etching back the thin nitride layer to expose a portion of the hard mask layer, removing the hard mask layer and the carbon layer, and removing the thin nitride layer and the sacrificial nitride layer.

Abstract: In one embodiment, a semiconductor device includes substrate, a plurality of electrode layers provided above the substrate, and separated from each other in a first direction perpendicular to a surface of the substrate, and a first plug provided in the plurality of electrode layers. The device further includes first and second diffusion layers provided in the substrate, one of the first and second diffusion layers functioning as an anode layer of an ESD (electrostatic discharge) protection circuit, the other of the first and second diffusion layers functioning as a cathode layer of the ESD protection circuit, a second plug provided at a position that overlaps with the first diffusion layer in planar view, and electrically connected with the first diffusion layer, and a third plug provided at a position that does not overlap with the first diffusion layer in planar view, and electrically connected with the first diffusion layer.

Abstract: A display substrate and a manufacturing method therefor, and a display device are provided. The display substrate includes: a base substrate; a planarization layer on the base substrate; an isolation structure and connection pads on the base substrate; and first protective parts on a side of the connection pads away from the base substrate, where the isolation structure includes a first groove formed in the planarization layer, and a first isolation sub-layer and a second isolation sub-layer on a side of the planarization layer away from the base substrate, a first space is provided between the first isolation sub-layer and the second isolation sub-layer, and an orthographic projection of the first space on the base substrate is within an orthographic projection of the first groove on the base substrate; and the first protective parts, the first isolation sub-layer and the second isolation sub-layer are disposed in a same layer.

Abstract: An organic light-emitting display device includes: a substrate on which a display area and a non-display area surrounding the display area are defined, the display area includes a main area and at least one protruding area, and a plurality of pixels is in the display area; a first signal line on the substrate in the main area to provide signals to the plurality of pixels; a second signal line on the substrate in the protruding area to provide signals to the plurality of pixels; a compensation line on the substrate in the non-display area and electrically connected to the second signal line; and a bridge pattern over the second signal line and the compensation line in the non-display area and electrically connecting the second signal line with the compensation line, the bridge pattern including a double-bridge structure.

Abstract: A semiconductor structure and a fabrication method are provided. The semiconductor structure includes: a base substrate; gate structures and source/drain plugs over the base substrate; source/drain contact structures on the source/drain plugs; gate contact structures on the gate structures; and a dielectric layer on the gate structures and the source/drain plugs. Cavities are formed between the gate structures and the source/drain plugs along a surface of the base substrate. The dielectric layer encloses tops of the cavities.

Abstract: Provide is a light emitting device including a reflective layer including a phase modulation surface, a planarization layer disposed on the reflective layer, a first electrode disposed on the planarization layer, an organic emission layer disposed on the first electrode and configured to emit visible light that includes light of a first wavelength and light of a second wavelength that is shorter than the first wavelength, and a second electrode disposed on the organic emission layer, wherein the reflective layer and the second electrode form a micro cavity configured to resonate the light of the first wavelength, and wherein the planarization layer includes a light absorber configured to absorb the light of the second wavelength.

Abstract: Provide is a light emitting device including a reflective layer including a phase modulation surface, a planarization layer disposed on the reflective layer, a first electrode disposed on the planarization layer, an organic emission layer disposed on the first electrode and configured to emit visible light that includes light of a first wavelength and light of a second wavelength that is shorter than the first wavelength, and a second electrode disposed on the organic emission layer, wherein the reflective layer and the second electrode form a micro cavity configured to resonate the light of the first wavelength, and wherein the planarization layer includes a light absorber configured to absorb the light of the second wavelength.

Abstract: A display device includes: a plurality of pixel-region mask spacers disposed in a pixel region where a plurality of pixels are disposed; a plurality of frame-region mask spacers disposed in a frame region outside the pixel region so as to surround the pixel region; and a common layer disposed on the plurality of pixel-region mask spacers, the common layer being common to the plurality of pixels, wherein the common layer comprises an end that has undulations in a plan view.

Abstract: A method includes providing first and second structures over a substrate, wherein each of the first and second structures includes source/drain (S/D) regions, a channel region between the S/D regions, a sacrificial dielectric layer, and a sacrificial gate. The method further includes partially recessing the sacrificial gate without exposing the sacrificial dielectric layer in each of the first and the second structures; forming a first patterned mask that covers the first structure; removing the sacrificial gate from the second structure; removing the first patterned mask and the sacrificial dielectric layer from the second structure; and depositing a layer of a capacitor material over the portion of the sacrificial gate in the first structure and over the channel region in the second structure.

Abstract: A method of manufacturing a capacitor structure includes the following. A first, second, third, fourth, fifth, sixth and seventh portions of a contact layer arrange from periphery to center. A first-conductive layer contacting the first portion forms in an opening. A first-dielectric layer contacting the second portion forms on the first-conductive layer. A second-conductive layer forms on the first-dielectric layer. A second-dielectric layer contacting the third portion forms on the second-conductive layer. A third-conductive layer contacting the fourth portion forms on the second-dielectric layer. A third-dielectric layer contacting the fifth portion forms on the third-conductive layer. A fourth-conductive layer contacting the second-conductive layer forms on the third-dielectric layer. A fourth-dielectric layer contacting the sixth portion forms on the fourth-conductive layer. A fifth-conductive layer contacting the seventh portion forms on the fourth-dielectric layer.

Abstract: An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region.