Abstract: A semiconductor light emitting device includes a first conductive clad layer that is group III-V semiconductor mixed crystal, an active layer, and a second conductive clad layer. The second conductive clad layer has a laminated structure of at least three layers including a first layer, a second layer, and a third layer disposed in this order closer to the active layer. The second layer and the third layer are included in a striped ridge, and the second layer is positioned at a skirt of the ridge. The surface of the first layer is a flat part at both sides of the ridge. When Al compositions of the first layer, second layer, and third layer are X1, X2, and X3, respectively, the relation X2>X1, X3 is satisfied. When film thicknesses of the first layer, second layer, and third layer are D1, D2, and D3, the relation D2<D3 is satisfied.

Abstract: Disclosed is a skin treatment device for personal use. The device includes an optical radiation providing module operating in pulsed or continuous operation mode, a mechanism for continuously displacing the device across the skin, and a device displacement speed monitoring arrangement. When the device is applied to skin, the optical pulses repetition rate establishes the power of the optical radiation as a function of the device displacement speed. The device a hair removal mechanism configured to mechanically remove hair from the treated segment of the skin.

Abstract: A device is provided. The device includes a first organic light emitting device, which further comprises a first electrode, a second electrode, and an organic emissive layer disposed between the first electrode and the second electrode. The device also includes a first laser device, which further comprises an optical cavity and an organic lasing material disposed within the optical cavity. A focus mechanism is disposed to focus light emitted by the first organic light emitting device onto the first laser device. Preferably, the focus mechanism provides light incident on the first laser device at least 10 times greater, and more preferably at least 100 times greater, in intensity than the light emitted by the first organic light emitting device.

Abstract: The patent refers to one or more droplets of chiral liquid crystals used as point source(s) of laser light. The source is shaped as a droplet of chiral liquid crystals (1) and an active medium preferably dispersed in the liquid crystals. The source is spherical and with a size of preferably between a few nanometres and 100 micrometres. A droplet consists of chiral liquid crystals (1) that have selective reflection in the range of the active medium's emission and can be cholesteric liquid crystals, a mixture of nematic liquid crystals and a chiral dopant or any other chiral liquid-crystal phase, preferably the blue phase, the ferroelectric phase, the antiferroelectric phase, any of the ferrielectric phases or another chiral phase of a soft substance, that need not be chiral by itself.

Abstract: A method and apparatus for producing single mode random fiber ring laser by inducing random distributed feedback in a short section of the fiber ring to thereby enable single mode lasing while reducing frequency jitter and relative intensity noise. The random distributed feedback maybe achieved through deep refractive index modulation at a series of randomly distributed laser-irradiated points inscribed along the length of the induced random distributed feedback fiber. The laser-processed random distributed feedback fiber maybe incorporated into the fiber ring in conjunction with a variable optical attenuator and band pass optical filter for enhancing the single mode operation.

Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: An optical assembly that installs red, green, blue laser diodes (LDs) within a single package is disclosed. The LDs are mounted on a base via respective sub-mounts. Light emitted from the LDs is collimated by collimating lenses and multiplexed by two wavelength filters so as to align optical axes of the light. The multiplexed light has an axis substantially leveled with the axes of the red, green, and blue light measured from the top of the base.

Abstract: Corrosion resistant electrodes are formed of brass that has been doped with phosphorus. The electrodes are formed of brass that contains about 100 ppm to about 1,000 ppm of phosphorus, and the brass has no visible microporosity at a magnification of 400×. The brass may be cartridge brass that contains about 30 weight percent of zinc and the balance copper. Corrosion resistant electrodes also may be formed by subjecting brass to severe plastic deformation to increase the resistance of the brass to plasma corrosion. The corrosion resistant electrodes can be used in laser systems to generate laser light.

Abstract: There is provided a pulse shaping device including a pulse generator configured to generate pulsed light by using a semiconductor laser for emitting light of a predetermined wavelength, and an optical member provided in a subsequent stage of the pulse generator and configured to compress a pulse time width of the pulsed light. The pulsed light has a first frequency dispersion state. The optical member imparts a second frequency dispersion state to the pulsed light, the second frequency dispersion state being a frequency dispersion state opposite to the first frequency dispersion state.

Abstract: An economical slab laser for high power applications. The laser is a lamp driven slab design with face-to-face beam propagation and an end reflection that redirects the amplified radiation back out the input surface. Also presented is a side-to-side larger amplifier configuration, permitting very high average and peak powers due to the electrical efficiency of converting and getting energy into the crystal, optical extraction efficiency, and scalability of device architecture. Cavity filters adjacent to pump lamps convert the unusable UV portion of the pump lamp spectrum into light in the absorption band of the slab laser thereby increasing the overall pump efficiency. The angle of the end reflecting surface is changed to cause the exit beam to be at a different angle than the inlet beam, thereby eliminating the need to separate the beams external to the laser with the subsequent loss of power.

Abstract: An optical device includes a first substrate, having first and second surfaces, and a second substrate having a third surface. The first substrate includes: a laser unit, having an active layer and emitting light into the first substrate from the active layer; a reflecting mirror, having a plane obliquely intersecting an optical axis of light emitted from the laser unit, and being formed on the first surface so as to reflect the light toward the second surface; and a convex lens, being formed in a region on the second surface, the region including an optical axis of the light reflected by the reflecting mirror. The second substrate is provided with a grating coupler and an optical waveguide on the third surface, the optical waveguide having light incident on the grating coupler propagating therethrough.

Abstract: A wavelength tunable laser includes a gain section, a grating section, and an isolation section. The gain section generates and modulates an optical signal. The grating section is positioned adjacent to the gain section, and the isolation section is disposed between the gain section and the grating section. The isolation section impedes conduction of an electrical current between the gain section and the grating section.

Abstract: A laser includes an optically pumped semiconductor OPS gain-structure. The apparatus has a laser-resonator which includes a mode-locking device for causing the laser to deliver mode-locked pulses. The resonator has a total length selected such that the mode-locked pulses are delivered at a pulse repetition frequency less than 150 MHz. An optical arrangement within the resonator provides that radiation circulating in the resonator makes a plurality of incidences on the OPS gain-structure with a time less than the excited-state lifetime of the gain-structure between successive incidences.

Abstract: A monolithic three dimensional NAND string includes a semiconductor channel, at least one end part of the semiconductor channel extending substantially perpendicular to a major surface of a substrate and a plurality of control gate electrodes extending substantially parallel to the major surface of the substrate. The NAND string also includes a memory film located between the semiconductor channel and the plurality of control gate electrodes and a blocking dielectric containing a plurality of clam-shaped portions each having two horizontal portions connected by a vertical portion. The NAND string also includes a plurality of discrete cover silicon oxide segments located between the memory film and each respective clam-shaped portion of the blocking dielectric containing a respective control gate electrode. Each of the plurality of cover silicon oxide segments has curved upper and lower sides and substantially straight vertical sidewalls.

Abstract: A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of Inx1Aly1Ga1-x1-y1N, where x1>0 and y1>0, the second cladding layer being made of Inx2Aly2Ga1-x2-y2N, where0?x2?about 0.02 and about 0.03?y2?about 0.07.

Abstract: A screen printing method of LED module with phosphor includes: board preparation providing an LED module board with a substrate and a plurality of LED sources fixed on the substrate. The LED sources are flip chip structural and the metal electrodes thereof are fixed to the bonding pads of the substrate. A screen board is provided with meshes corresponding to the shiny sides of the LED sources of the substrate one by one. A projection of each mesh to the shiny side of the corresponding LED source has similar shape with the shiny side of the LED source. The top of the screen board is printed with allocated colloidal phosphor until each mesh is coated fully. The printed substrates are baked to solidify the phosphor. The periphery of the shiny side is fully coated.

Abstract: The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).

Abstract: An end surface 3b of a solid-state laser element 3 is sloped in such a way that, assuming that laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, an end surface 4a of a wavelength conversion element 4 is sloped in such a way that, assuming that the laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, and the end surface 3b and the end surface 4b are arranged in such a way as to be opposite to each other.

Abstract: Methods and systems for improved matching of on-chip capacitors may comprise a semiconductor die with an on-chip capacitor comprising one or more metal layers. The on-chip capacitor may comprise interdigitated electrically coupled metal fingers. The electrically coupled metal fingers may be arranged symmetrically in the semiconductor die to compensate for non-uniformities in the one or more metal layers. The metal fingers may be arranged with radial symmetry. Metal fingers in a first metal layer may be electrically coupled to metal fingers in a second metal layer. An orientation of metal fingers may be alternated when coupling metal fingers in a plurality of metal layers. The metal fingers may be coupled at the center or the outer edge of the on-chip capacitor. The on-chip capacitor may be configured in a plurality of symmetric sections wherein a boundary between each of the plurality of sections is configured in a zig-zag pattern.

Abstract: A semiconductor structure includes a P well formed on a P type substrate; a first N type electrode area formed on a central region of the P well; a first insulating area formed on the P well and surrounding the first N type electrode area; a second N type electrode area formed on the P well and surrounding the first insulating area; a second insulating area formed on the P well and surrounding the second N type electrode area; and a P type electrode area formed on the P well and surrounding the second insulating area; wherein periphery outlines of the first N type electrode area and the second N type electrode area are both 8K sided polygons or circles, and K is a positive integer.