Abstract: A semiconductor laser device includes an n-type semiconductor substrate, an n-type cladding layer laminated on the semiconductor substrate, an n-side light guiding layer laminated on the n-type cladding layer, an active layer laminated on the n-side light guiding layer, a p-side light guiding layer laminated on the active layer, and a p-type cladding layer laminated on the p-side light guiding layer. The sum of the thicknesses of the n-side and p-side light guiding layers is such that the first and higher order modes of oscillation can occur in the crystal growth direction. A low refractive index layer having a lower refractive index than the n-type cladding layer is located between the n-side light guiding layer and the n-type cladding layer, and the active layer is displaced from the lateral center plane of the light guiding layer structure toward the p-type cladding layer.

Abstract: A laser system comprising a laser configured to generate a laser beam, a power supply arranged to provide a drive power to the laser, a photodetector arranged to detect the power of the laser beam and provide a detection signal from the power of the laser beam and a feedback loop arranged to form a feedback signal by subtracting a target signal from the detection signal wherein the feedback signal has a high bandwidth, amplify the feedback signal and adjust the drive power according to the amplified feedback signal, thereby reducing noise in the laser beam.

Abstract: A method and apparatus for active voltage regulation in optical modules utilize a voltage regulator to change the supply voltage provided to laser diode driver and receiver electronics to optimize module performance over temperature. The ambient temperature of the module is monitored. The outputs of the voltage regulator are controlled to provide voltages that are optimized with respect to temperature for the integrated circuits in the optical module. This control is implemented via a temperature sensitive feedback or a control input from a microcontroller with a temperature monitor input. The supply voltage is optimized to minimize the voltage required to achieve acceptable performance at a given temperature. Minimizing the supply voltage lengthens the lifetime of the integrated circuit and the optical module. The voltage regulator provides higher than standard supply voltages to a laser diode driver to compensate for higher laser voltage at low temperatures.

Abstract: A damping circuit having an input terminal and an output terminal is described. The damping circuit comprises a driver having an input and an output; an RC circuit coupled between the input terminal and the output; and a resistor coupled between the output and the output terminal, wherein the RC circuit delays passing a signal from the output terminal to the input terminal and a low impedance associated with the driver generally reduces ringing.

Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

Abstract: The invention describes a method of manufacturing a VCSEL module (100) comprising at least one VCSEL chip (33) with an upper side (U) and a lower side (L) and with a plurality of VCSEL units (55) on a common carrier structure (35), the VCSEL units (55) comprising a first doped layer (50) of a first type facing towards the lower side (L) and a second doped layer (23) of a second type facing towards the upper side (U). The method comprises the steps of dividing the VCSEL chip (33) into a plurality of subarrays (39a, 39b, 39c, 39d, 39e, 39f, 39g, 39h, 39i) with at least one VCSEL unit (55) each, electrically connecting at least some of the subarrays (39a, 39b, 39c, 39d, 39e, 39f, 39g, 39h, 39i) in series. The invention also describes a VCSEL module (100) manufactured in such process.

Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

Abstract: A magnetoresistive element has a magnetic layer, an insulating layer and a magnetic layer, which are laminated on a base electrode, and side walls of the magnetic layers that are formed when the magnetic layers are processed. At least one element selected from the group of consisting He, C, N, O, F, Ne, Ti, V, Cu, Al, Si, P, S, Cl, Ar, Ge, As, Kr, Zr, In, Sn, Sb, Pb and Bi is injected into the side walls and edge portions of the magnetic layers to improve the magnetic characteristics of the first and second magnetic layers.

Abstract: A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.

Abstract: A system and method for triggering data acquisition in a semiconductor laser system including outputting electromagnetic energy from the semiconductor laser over a range of wavelengths according to a signaling path. The signaling path includes a plurality of discrete data inputs to the semiconductor laser for outputting electromagnetic energy over a range of wavelengths and the signaling path includes one or more perturbances in transitioning from one wavelength to another wavelength along the signaling path. A series of triggering signals are generated for input to a measurement system by the semiconductor laser. The series of triggering signals include a non-uniform period between at least a first triggering signal and an adjacent second triggering signal, and the non-uniform period corresponds to at least one perturbance. The electromagnetic energy output from the semiconductor laser is detected based on the series of triggering signals.

Abstract: A generation unit generates adjustment information to adjust a first clock indicating a timing of illumination of a laser beam to scan on a screen, based on a scanning position to be scanned by the laser beam. On the basis of the adjustment information, adjustment unit adjusts the first clock to a second clock different from the first clock. Then, in synchronization with the second clock, the laser beam is allowed to illuminate as a pixel. This may be applicable to a projection apparatus for projecting an image on the screen, for example.

Abstract: A laser assembly (10) that generates a beam (12) includes (i) a gain medium (22) that generates the beam (12) when electrical power is directed to the gain medium (22); (ii) a grating (32) positioned in a path of the beam (12); (iii) a grating arm (34) that retains the grating (32); and (iv) a mover assembly (36) that moves the grating arm (34) about a pivot axis (38). The mover assembly (36) includes a coarse mover (344) that makes large scale movements to the grating arm (34), and a fine mover (352) that makes fine movements to the grating arm (34). With this design, the mover assembly (36) can quickly and accurately move the grating (32) over a relatively large range.

Abstract: Various embodiments provide semiconductor devices including high-K dielectric layer(s) and fabrication methods. An exemplary high-K dielectric layer can be formed by providing a semiconductor substrate including a first region and a second region, and forming a first silicon oxide layer on the semiconductor substrate in the first region. The semiconductor substrate can then be placed in an atomic layer deposition (ALD) chamber to repeatedly perform a selective ALD process. The selective ALD process can include an etching process and/or a purging process in the ALD chamber. By repeatedly performing the selective ALD process, a first high-K dielectric layer can be selectively formed on the first silicon oxide layer in the first region, exposing the semiconductor substrate in the second region.

Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

Abstract: An optical light source is provided. The optical light source includes a waveguide including two reflectors arranged spaced apart from each other to define an optical cavity therebetween, an optical gain medium, and a coupling structure arranged to couple light between the optical cavity and the optical gain medium.

Abstract: An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, wherein the waveguide region includes a first waveguide layer, a second waveguide layer and an active layer arranged between the first and second waveguide layers and generates laser radiation, the waveguide region is arranged between first and second cladding layers disposed downstream of the waveguide region in a growth direction of the semiconductor body, a phase structure is formed in the semiconductor body and includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer including a semiconductor material different from the semiconductor material of the second cladding layer is embedded into the second cladding layer, and the cutout extends from a top side of the semiconductor body at least partly into the first intermediate layer.

Abstract: A laser beam combining and power scaling device and method. A first highly reflective mirror residing perpendicular to the first optical axis reflecting radiation emitted from the first laser head. A first Q-switch in alignment with the first optical axis interposed between the first highly reflective mirror and the first laser head. A second highly reflective mirror residing perpendicular to the second optical axis reflecting radiation emitted from the second laser head. The second Q-switch in alignment with the second optical axis is interposed between the second highly reflective mirror and the first laser head. A third optical axis is coincident with the first optical axis. A third highly reflective mirror residing perpendicular to the third optical axis in alignment therewith. The third optical axis may include a third diode pumped laser head and Q-switch. A beam splitter resides at the intersection of the axes.

Abstract: Compact high brightness light sources for the mid and far IR spectral region, and exemplary applications are disclosed based on passively mode locked Tm fiber comb lasers. In at least one embodiment the coherence of the comb sources is increased in a system utilizing an amplified single-frequency laser to pump the Tm fiber comb laser. The optical bandwidth generated by the passively mode locked Tm fiber comb laser is further decreased by using simultaneous 2nd and 3rd order dispersion compensation using either appropriate chirped fiber Bragg gratings for dispersion compensation, or fibers with appropriately selected values of 2nd and 3rd order dispersion. Fibers with large anomalous values of third order dispersion, or fibers with large numerical apertures, for example fibers having air-holes formed in the fiber cladding may be utilized.

Abstract: Systems and methods for providing a low stress electrode connection capable of carrying a high electrical current to an edge-emitting device, such as a laser diode are described. Systems and methods for providing mechanisms to allow precise adjustment of the relative position of one heat-sink for an optical edge emitting device relative to an adjacent heat-sink in a stack of heat-sinks are also provided herein.

Abstract: Monolithic opto-isolators and arrays of monolithic opto-isolators are disclosed. The monolithic opto-isolators are manufactured in a single semiconductor wafer where they may be tested at the wafer level before each opto-isolator is singulated from the wafer. The monolithic opto-isolators include a VCSEL monolithically produced adjacent to a photodiode where an axis of optical signal transmission of the VCSEL is substantially parallel to an axis of optical signal reception by the photodiode.