Abstract: A compound represented by the formula (I). wherein R1 represents a hydrogen atom, a halogen atom or a C1 to C6 alkyl group that may have a halogen atom; R2 represents a C1 to C12 fluorinated saturated hydrocarbon group; W1 represents a C5 to C18 divalent alicyclic hydrocarbon group; A1 and A2 independently represents a single bond or *-A3-X1-(A4-X2)a—; A3 and A4 independently represents a C1 to C6 alkanediyl group; X1 and X2 independently represents —O—, —CO—O— or —O—CO—; a represents 0 or 1; and * represents a bond to an oxygen atom.

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

Abstract: A method of pattern formation. The method is capable of inhibiting a post-development residue from remaining on a support equipped with an electrode, and a method of producing a polysilane-polysiloxane resin precursor that is suitable for use in the method of pattern formation. The method of pattern formation includes forming a film of a silicon-containing composition on the support equipped with an electrode forming a film of a resin composition on the film of a silicon-containing composition, and forming the film of a resin composition into a pattern.

Abstract: The present invention provides a compound represented by following formula (1), wherein R1 represents a 2n-valent group having 1 to 30 carbon atoms, each of R2 to R5 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from R1 to R5 represents a group including an iodine atom and at least one R4 and/or at least one R5 represent/represents one or more selected from the group consisting of a hydroxyl group and a thiol group, each of m2 and m3 independently represents an integer of 0 to 8, each of m4 and m5 independently represents an integer of 0 to 9, provided that m4 and m5 do not represent 0 at the same time, n represents an integer of 1 to 4, and each of p2 to p5 independently represents an integer of 0 to 2.

Abstract: A compound represented by the formula (I): wherein R1, R2, R3, R4, X1, X2, Xa, Xb, L1, L2, L3 and L4 are defined in the specification.

Abstract: Disclosed herein are solder mask formulations that include a liquid photo imagable solution and a solution of functionalized diamondoids. Also disclosed are semiconductor fabrication methods that include applying a described solder mask formulation to a semiconductor device.

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

Abstract: A resist underlayer composition and a method of forming patterns using the resist underlayer composition, the resist underlayer composition including a polymer including a moiety represented by Chemical Formula 1 and a moiety represented by Chemical Formula 2, and a solvent,

Abstract: A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.

Abstract: A resin composition including the following components (a) and (b). (a) A polyimide precursor having a structural unit represented by the following general formula (1); and (b) a compound represented by the following general formula (2): wherein in the formula R1 is a tetravalent organic group, R2 is a divalent organic group and R3 and R4 are independently a hydrogen atom, an alkyl group, a cycloalkyl group or a monovalent organic group having a carbon-carbon unsaturated double bond.

Abstract: A compound represented by the formula (I). wherein R1 represents a hydrogen atom, a halogen atom or a C1 to C6 alkyl group that may have a halogen atom; R2 represents a C1 to C12 fluorinated saturated hydrocarbon group; W1 represents a C5 to C18 divalent alicyclic hydrocarbon group; A1 and A2 independently represents a single bond or *—A3—X1—(A4—X2)a—; A3 and A4 independently represents a C1 to C6 alkanediyl group; X1 and X2 independently represents —O—, —CO—O—or —O—CO—; a represents 0 or 1; and * represents a bond to an oxygen atom.

Abstract: A pattern-forming method includes applying a radiation-sensitive composition comprising a complex on a substrate to provide a film on the substrate. The film is exposed. The film exposed is developed. The complex includes: a metal-containing component that is a transition metal compound having a hydrolyzable group, a hydrolysis product of the transition metal compound having a hydrolyzable group, a hydrolytic condensation product of the transition metal compound having a hydrolyzable group, or a combination thereof; and an organic compound represented by formula (1). In the formula (1), R1 represents an organic group having a valency of n, n being an integer of 1 to 4. In a case where n is 1, X represents —COOH. In a case where n is 2 to 4, X represents —OH, —COOH, —NCO, —NHRa, —COORA or —CO—C(RL)2—CO—RA.

Abstract: A (meth)acryloyl compound represented by the following formula (A): wherein X is a 2m-valent group having 1 to 60 carbon atoms or a single bond; each Z is independently an oxygen atom, a sulfur atom, or not a crosslink; each R1 is independently a linear, branched, or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms and optionally having a substituent, an alkenyl group having 2 to 30 carbon atoms and optionally having a substituent, an alkoxy group having 1 to 30 carbon atoms and optionally having a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with a vinylphenylmethyl group, wherein the alkyl group, the aryl group, the alkenyl group, or the alkoxy group optionally contains an ether bond, a ketone bond, or an ester bond; each R1A is independently a methyl group or a hydrogen atom; each k is independently an integer of 0 to 2, pr

Abstract: It is possible to obtain a thin film that can form a minute pattern and that has a high index of refraction by using a polymer containing a triazine ring and containing a repeating unit structure represented for example by formula (22) or (26).

Abstract: A curable composition includes: an ?-type oxytitanium phthalocyanine pigment; and a curable compound. A method of manufacturing a curable composition includes a step of dispersing an ?-type oxytitanium phthalocyanine pigment and a pigment other than an oxytitanium phthalocyanine pigment in the presence of a solvent. A film, an infrared cut filter, and an infrared transmitting filter are formed using the curable composition. A pattern forming method includes: a step of forming a curable composition layer on a support using the curable composition; and a step of forming a pattern on the curable composition layer using a photolithography method or a dry etching method. The device is a solid image pickup element, an infrared sensor, or an image display device including the film.

Abstract: A laminate comprising a thermoplastic film and a positive resist film is provided, the positive resist film comprising (A) a novolak resin-naphthoquinone diazide (NQD) base resin composition, (B) a polyester, and (C) 3-30 wt % of an organic solvent. The resist film may be transferred to a stepped support without forming voids.

Abstract: A photosensitive resin composition, ensuring that after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and a high-adhesion polyimide layer is obtained, and a polyimide using the photosensitive resin composition, can be provided. Furthermore, a semiconductor device in which after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and short circuiting or disconnection following a high-temperature storage test is unlikely to occur. A photosensitive resin composition is characterized by including a component (A) as a photosensitive polyimide precursor, and a component (B) containing a structure represented by formula (B1). (In formula (B1), Z is a sulfur or oxygen atom, and each of R1 to R4 independently represents a hydrogen atom or a monovalent organic group).

Abstract: Various compositions encompassing polymers containing acidic pendent groups in combination with one or more reactive olefinic compounds and a photoacid generators form self-imagable negative tone films. Examples of such polymers include polymers and copolymers containing norbornene-type repeating units having acidic pendent groups, ring opened maleic anhydride polymers, polyacrylic acid, polyhydroxystyrene polymers, and the like. The films formed from such compositions provide self imagable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices, among other applications.

Abstract: A photosensitive resin composition which contains a compound represented by general formula (1). (In general formula (1), R1-R4 may be the same or different, and each represents a hydrogen atom or an organic group having 1-4 carbon atoms; and X represents a tetravalent organic group having two or more structural units represented by general formula (2) in the main chain.) (In general formula (2), R5 represents a hydrogen atom or an alkyl group having 1-20 carbon atoms, and a plurality of R5s in the same molecule may be the same or different.) Provided is a photosensitive resin composition which enables the achievement of a cured film having low stress after being heated and fired, and which has excellent long-term stability, high sensitivity and high resolution.

Abstract: A resin is to be added to a resist composition and localized on a surface of a resist film so as to hydrophobilize the surface of a resist film and has a peak area of a high molecular weight component having a molecular weight of 30,000 or more is 0.1% or less of a total peak area in a molecular weight distribution measured by gel permeation chromatography.