Abstract: Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

Abstract: The disclosure provides a photosensitive adhesive composition including 10 parts by weight to 90 parts by weight of a monomer having a vinyl ether functional group, 10 parts by weight to 90 parts by weight of a tertiary amine polymer, and 0.5 parts by weight to 10 parts by weight of a photoacid initiator. The weight-average molecular weight of the tertiary amine polymer is between 2000 and 20000. The disclosure also provides a photosensitive conductive adhesive composition and an electronic device containing the photosensitive conductive adhesive composition.

Abstract: A photoacid generator (PAG) and a photoresist composition, the PAG being represented by the following Chemical Formula (I): wherein, in Chemical Formula (I), L is sulfur (S) or iodine (I), R3 being omitted when L is I; R1, R2, and R3 are each independently a C1 to C10 alkyl, alkenyl, alkynyl, or alkoxy group that is unsubstituted or substituted with a heteroatom such that the heteroatom is pendant or is between the group and L, or a C6 to C18 aryl, arylalkyl, or alkylaryl group that is unsubstituted or substituted with a heteroatom such that the heteroatom is pendant or is between the group and L; AL is an acid-labile group; m is 1 to 4; and M is a C1 to C30 hydrocarbon group that is unsubstituted or substituted with a heteroatom such that the heteroatom is pendant or is between the group and a sulfur atom.

Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract: A photoresist polymer is synthesized from a repeating unit that comprises a first leaving group including an ester group, and a second leaving group capable of being removed together with the first leaving group.

Abstract: Photoresist compositions are provided comprising a radiation sensitive component and at least two distinct novolak resins. In one aspect, photoresists of the invention exhibit notably high dissolution rates, such as in excess of 800 angstroms per second in aqueous developer solution. In another aspect, photoresists of the invention can exhibit good photospeeds, such as 100 mJ/cm2 or less.

Abstract: A patterning process, comprises: (i) forming a radiation-sensitive film on a substrate, wherein the radiation-sensitive film comprises: (a) a resin, (b) a photoacid generator, (c) a first quencher, and (d) a second quencher; (ii) patternwise exposing the radiation-sensitive film to activating radiation; and (iii) contacting the radiation-sensitive film with an alkaline developing solution to form a resist pattern; wherein the resin comprises the following repeat units: wherein: R1 is selected from a hydrogen atom, an alkyl group having from 1 to 4 carbon atoms, a cyano group or a trifluoromethyl group; Z is a non-hydrogen substituent that provides an acid-labile moiety; n is from 40 to 90 mol %; m is from 10 to 60 mol %; and the total combined content of the two repeat units in the resin is 80 mol % or more based on all repeat units of the resin; and the first quencher is selected from benzotriazole or a derivative thereof.

Abstract: To provide a laminate which enables pattern formation with excellent opening shape even in the case where a chemically amplified negative type resist material is used, and a pattern forming method in which the laminate is used. The laminate includes a chemically amplified negative type resist layer, and a basic resin coat layer thereon that contains 0.001 to 10% by weight of a basic compound having a molecular weight of up to 10,000.

Abstract: For example, a thin film that has a high refractive index and is capable of forming a fine pattern can be obtained by using a triazine-ring-containing polymer that includes a repeating unit structure represented by formula [4].

Abstract: A pattern forming method includes, in this order, forming a film on a substrate, using an active-light-sensitive or radiation-sensitive resin composition containing a resin (A) which has a repeating unit having a phenolic hydroxyl group, and a repeating unit having a group that decomposes by the action of an acid to generate a carboxyl group, and a compound (B) that generates an acid upon irradiation with active light or radiation; exposing the film; and developing the exposed film using a developer including an organic solvent, in which the developer including an organic solvent contains an organic solvent having 8 or more carbon atoms and 2 or less heteroatoms in the amount of 50% by mass or more.

Abstract: To provide a photocurable resin composition comprising an N-vinyl amide compound, a polyfunctional (meth)acrylate monomer and a photopolymerization initiator and having excellent adhesion to an optical substrate and free from an appearance defect such as a crack or shrinkage and a laminate having a coat layer obtained by curing the photocurable resin composition.

Abstract: A novel photocurable resin composition including: a polymer with a weight average molecular weight of 1,000 to 50,000, the polymer having a structural unit of formula (1), and having a structure of formula (2) at an end: wherein X is a C1-6 alkyl group, vinyl group, allyl group, or glycidyl group; m and n are each independently 0 or 1; Q is a divalent hydrocarbon group having a carbon atom number of 1 to 16; Z is a divalent linking group having a carbon atom number of 1 to 4, wherein the divalent linking group is attached to the —O— group in formula (1); and R1 is a hydrogen atom or methyl group; a radical photopolymerization initiator; and a solvent.

Abstract: [Problem] To provide a composition for forming a fine pattern having a good pattern shape even after being applied to a thick-film resist, a high size reduction rate and less defects, as well as a method for forming a fine pattern using the same. [Means for Solution] A composition comprising vinyl resin, an amine compound having a specific cage-type three-dimensional structure and a solvent, and a method for forming a fine pattern using the same.

Abstract: A method for producing an electronic device includes the pattern forming method, and an actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development. Specifically, provided is a pattern forming method, including a film forming step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of irradiating the film, and a development step of developing the film using a developer containing an organic solvent, in which the composition contains a resin containing a repeating unit having an Si atom and a repeating unit having an acid-decomposable group and a compound capable of generating an acid upon irradiation with actinic rays or radiation, the content of Si atoms in the resin is 1.0 to 30 mass %, and the content of the resin in the total solid content of the composition is 20 mass % or more.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including: a base component which exhibits changed solubility in a developing solution under action of acid and a fluorine additive component which exhibits decomposability to an alkali developing solution, the fluorine additive component including a fluorine resist component having a structural unit derived from a compound represented by general formula (f1-1) in which W represents a polymerizable group-containing group; Rf1 and Rf2 each independently represents a hydrogen atom or an electron-withdrawing group; and Rf3 represents a hydrocarbon group

Abstract: A salt represented by formula (I): wherein R1 and R2 independently each represent a C6-C18 unsubstituted or substituted aromatic hydrocarbon group, X1 represents a C1-C12 divalent aliphatic saturated hydrocarbon group in which a methylene group can be replaced by an oxygen atom or a carbonyl group, and A? represents an organic anion.

Abstract: A resist underlayer film forming composition for lithography for forming a resist underlayer film that can be used as a hard mask, including: a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane includes at least one hydrolyzable silane selected from the group made of hydrolyzable silanes of Formula (1), Formula (2), and Formula (3): A method for producing a semiconductor device including: forming an organic underlayer film on a semiconductor substrate; applying the resist underlayer film forming composition onto the organic underlayer film and baking the composition to form a resist underlayer film; applying a resist film forming composition onto the resist underlayer film to form a resist film; exposing the resist film to light; developing the resist film after exposure to obtain a resist pattern; and etching in this order.

Abstract: The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: wherein R1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R2 to R5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R2 to R5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m2 and m3 are each independently an integer of 0 to 8; m4 and m5 are each independently an integer of 0 to 9, provided that m2, m3, m4, and m5 are not 0 at the same time; n is an integer of 1 to 4; and p2 to p5 are each independently an integer of 0 to 2.

Abstract: A resist composition which contains a resin (A1) which has a structural unit having a sulfonyl group, a structural unit represented by formula (II) and a structural unit having an acid-labile group, and an acid generator: wherein R1 represents a hydrogen atom, a halogen atom or a C1 to C6 alkyl group that may have a halogen atom, L1 represents a single bond or *-L2-CO—O-(L3-CO—O)g— where * represents a binding position to an oxygen atom, L2 and L3 independently represent a C1 to C12 divalent hydrocarbon group, “g” represents 0 or 1, and R3 represents a C1 to C12 liner or branched alkyl group except for a tertiary alkyl group.

Abstract: Disclosed are a polysulfone amide compound having a repeating unit represented by formula (1) (in formula (1), R1-R8 each independently represent a hydrogen atom or a monovalent organic group, X represents a divalent linking group which is not conjugated with a benzene ring to be linked thereto, and Y represents a divalent aromatic residue), and a resin composition comprising the polysulfone amide compound.