Abstract: New photoresist compositions are provided that comprise a component that comprises a radiation-insensitive ionic compound. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a radiation-insensitive ionic compound that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

Abstract: A resist composition which contains a resin (A1) which has a structural unit represented by formula (I), a structural unit represented by formula (II) and a structural unit having an acid-labile group, and an acid generator: wherein R1 and R2 independently represent a hydrogen atom, a halogen atom or a C1-6 alkyl group that may have a halogen atom, Ra25 represents a carboxy group, a cyano group or a C1-4 aliphatic hydrocarbon group, A1 represents a single bond, *-A2-O—, *-A2-CO—O—, etc., A2 and A3 independently represents a C1-6 alkanediyl group, and w1 represents an integer of 0 to 8, L1 represents a single bond or *-L2-CO—O-(L3-CO—O)g—, L2 and L3 independently represent a C1-12 divalent hydrocarbon group, g represent 0 or 1, R3 represents a C1-12 liner or branched alkyl group except for a tertiary alkyl group and * represents a binding position to an oxygen atom.

Abstract: A pattern-forming method includes applying a radiation-sensitive composition on a substrate to provide a film on the substrate. The film is exposed. The film exposed is developed. The radiation-sensitive composition includes a metal-containing component that is a metal compound having a hydrolyzable group, a hydrolysis product of the metal compound having a hydrolyzable group, a hydrolytic condensation product of the metal compound having a hydrolyzable group, or a combination thereof. A content of a transition metal atom in the metal-containing component with respect to total metal atoms in the metal-containing component is no less than 50 atomic %.

Abstract: An object is to provide a method for forming a resist pattern able to form a resist pattern, in which the resist shape is favorable, the occurrence of resist footing can be reduced, and the adherence and the aspect ratio are improved; and provided is a method for forming a resist pattern comprising a step of forming a photosensitive resin layer on a substrate using a photosensitive resin composition for projection exposure; a step of exposing the photosensitive resin layer to active light projecting an image of a photomask through a lens; and a step of removing an unexposed part of the photosensitive resin layer from the substrate by development, wherein the photosensitive resin composition for projection exposure comprises an (A) binder polymer, a (B) photopolymerizing compound having an ethylenically unsaturated bond, and a (C) photopolymerization initiator; and a light transmittance of the photosensitive resin layer at a wavelength of 365 nm is not less than 58.0% and not more than 95.0%.

Abstract: A resist composition includes a base material component and a fluorine additive component. The fluorine additive component contains a fluororesin component having a structural unit containing a base dissociable group. The base material component contains a structural unit containing an acid-decomposable group in an amount of 30 mol % or more and an amount of 10 mol % or more of a resin component having a structural unit represented by formula (a10-1): where R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Yax1 is a single bond or a divalent linking group, Wax1 is a (nax1+1) valent aromatic hydrocarbon group, and nax1 is an integer of 1 to 3.

Abstract: A resist composition comprising a base polymer and a sulfonium or iodonium salt of sulfonic acid containing a cyclic hydrocarbon-substituted amino group offers dimensional stability on PPD and a satisfactory resolution.

Abstract: A photosensitive resin composition comprising (A) a silicone-modified polybenzoxazole resin and (B) a photoacid generator which is decomposed to generate an acid upon exposure to radiation of 190-500 nm is coated onto a substrate to form a thick coating, which is exposed to radiation, baked, and developed to form a pattern. The resin coating is capable of forming a fine pattern and has improved crack resistance and other film properties, and reliability.

Abstract: A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of formula (A) has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.

Abstract: A hardmask composition may include graphene nanoparticles having a size in a range of about 5 nm to about 100 nm and a solvent.

Abstract: This conductive composition includes: a conductive polymer (a) having a sulfonic acid group and/or a carboxy group; a basic compound (b) having at least one nitrogen-containing heterocyclic ring and an amino group; an aqueous polymer (c) having a hydroxyl group (excluding the conductive polymer (a)); a hydrophilic organic solvent (d); and water (e).

Abstract: A photosensitive resin composition contains (a) a polyimide which has, at a terminal of the main chain, at least one group selected from the group consisting of a carboxyl group, a phenolic hydroxyl group, a sulfonic acid group and a thiol group, (b) a monomer, (c) a thermally crosslinkable compound, (d) a photopolymerization initiator and (e) a polymerization inhibitor, wherein the polymerization inhibitor (e) is a compound obtained by adding at least one hydroxyl group, alkoxy group, aryloxy group or aralkyloxy group to a naphthalene skeleton or an anthracene skeleton of a compound having a naphthalene skeleton or an anthracene skeleton.

Abstract: Disclosed is a fluorine-containing composition containing a fluorine-containing compound represented by general formula (1) and a fluorine-based solvent.

Abstract: New bis(sulfonyl)imide and tri(sulfonyl)methide photoacid generator compounds (“PAGs”) are provided as well as photoresist compositions that comprise such PAG compounds.

Abstract: The present invention provides a tetracarboxylic acid diester compound shown by the following general formula (1), wherein X1 represents a tetravalent organic group; and R1 represents a group shown by the following general formula (2), wherein the dotted line represents a bond; Y1 represents an organic group with a valency of k+1; “k” represents 1 or 2; and “n” represents 0 or 1. There can be provided a tetracarboxylic acid diester compound that can give a polyimide precursor polymer soluble in a safe organic solvent widely used as a solvent of a composition and usable as a base resin of a photosensitive resin composition.

Abstract: The present invention relates to photoresist compositions comprising a base resin such as a monomer capable of radical polymerization upon photoinitiation, and photoinitiator molecules such as a diketone, and multicolor photolithography methods. Photoresist compositions comprise photoinitiator molecules that are exposed to a first radiation source, thereby exciting the photoinitiator molecules from a ground state to a pre-activated state. The pre-activated state molecules are then exposed to a second radiation source in selected locations, thereby deactivating the pre-activated state molecules in the selected locations. Any remaining pre-activated state molecules are exposed to a third radiation source, exciting such remaining pre-activated state photoinitiator molecules to an activated state. Polymerization of the base resin is then initiated.

Abstract: There are provided a pattern formation method, including: (1) forming a film using an active light-sensitive or radiation-sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A) having specific repeating units, and a crosslinking agent (C).

Abstract: The resist material according to the present invention contains a compound represented by the following formula (1): wherein each R0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.

Abstract: Embodiments encompassing a series of compositions containing photoacid generator (PAG) and a base are disclosed and claimed. The compositions are useful as permanent dielectric materials. More specifically, embodiments encompassing compositions containing a series of copolymers of a variety of norbornene-type cycloolefinic monomers and maleic anhydride in which maleic anhydride is fully or partially hydrolyzed (i.e., ring opened and fully or partially esterified), PAG and a base, which are useful in forming permanent dielectric materials having utility in a variety of electronic material applications, among various other uses, are disclosed.

Abstract: The present invention relates to a highly heat resistant silsesquioxane-based photosensitive resin composition for a liquid crystal display device or an organic EL display device, and a positive resist insulating layer prepared therefrom, and in particular, to a silsesquioxane-based photosensitive resin composition having high heat resistance and a low dielectric property, capable of being used as an insulating layer forming a via hole of the thin film transistor (TFT), and simultaneously, capable of being used as an insulating layer for forming a bank pattern dividing pixels of an organic EL display device.

Abstract: To provide a positive type photosensitive composition capable of forming a pattern of high resolution, of high heat resistance and of high transparency without emitting harmful volatile substances such as benzene, also capable of reducing pattern defects caused by development residues, by undissolved residues, or by reattached hardly-soluble trace left in pattern formation, and further capable of being excellent in storage stability. The present invention provides a positive type photosensitive siloxane composition comprising: a polysiloxane having a phenyl group, a diazonaphthoquinone derivative, a hydrate or solvate of a photo base-generator having a particular nitrogen-containing hetero-cyclic structure, and an organic solvent.