Abstract: A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate a substrate, a first electrode structure on the substrate, the first electrode structure including first insulating patterns and first electrode patterns, the first insulating patterns alternately stacked with the first electrode patterns, a second electrode pattern on a sidewall of the first electrode structure, and a data storage film on a sidewall of the second electrode pattern. The data storage film has a variable resistance.

Abstract: A light emitting device for a display including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, electrode pads disposed under the first LED sub-unit, each of the electrode pads being electrically connected to at least one of the first, second, and third LED sub-units, and lead electrodes electrically connected to the electrode pads and extending outwardly from the first LED sub-unit.

Abstract: A light emitting device for a display includes first LED sub-unit, second LED, and third LED sub-units, an insulating layer substantially covering the first, second, and third LED sub-units, and electrode pads electrically connected to the first, second, and third LED sub-units, in which the first LED sub-unit is disposed on a partial region of the second LED sub-unit, the second LED sub-unit is disposed on a partial region of the third LED sub-unit, the insulating layer has openings for electrical connection between the electrode pads, a common electrode pad is connected to the first, second, and third LED sub-units through the openings in the insulating layer, first, second, and third electrode pads are connected to the first, second, and third LED sub-units, respectively, through at least one of the openings, and the first, second, and third LED sub-units are configured to be independently driven using the electrode pads.

Abstract: A light emitting device for a display including a first substrate, a first LED sub-unit disposed on the first substrate, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a second substrate disposed on the third LED sub-unit, a first electrode pad, a second electrode pad, a third electrode pad, and a fourth electrode pad disposed on the second substrate, and through-hole vias electrically connecting the second, third, and fourth electrode pads to the first, second, and third LED sub-units, respectively, in which the first electrode pad is electrically connected to the first LED sub-unit without overlapping any through-hole vias.

Abstract: A light emitting device for a display includes a pixel region including first, second, and third LED stacks, an adhesive layer disposed between the first and second LED stacks, or between the second and third LED stacks, a metal bonding layer at least partially surrounded by the adhesive layer, and disposed between and is electrically connected to the first and second LED stacks, or the second and third LED stacks, and a common electrode pad connected to the first, second, and third LED stacks, first, second, and third electrode pads connected to the first, second, and third LED stacks, respectively, and the first, second, and third LED stacks are configured to be independently driven using the electrode pads.

Abstract: A light emitting device for a display including a plurality of pixel regions defined between at least one separation region disposed between the pixel regions, and a barrier disposed in the separation region, in which each of the pixel regions includes a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and electrode pads electrically connected to the first, second, and third LED stacks, the electrode pads comprising a common electrode pad, a first electrode pad, a second electrode pad, and a third electrode pad, the common electrode pad is connected to the first, second, and third LED stacks, the first, second, and third electrode pads are connected to the first, second, and third LED stacks, respectively, and the first, second, and third LED stacks are configured to be independently driven using the electrode pads.

Abstract: One illustrative integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor with an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure and a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor. In this example, the product also includes a gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of each of the GSD contact structure and the gate contact structure is positioned at a first level that is at a level that is above a level of an upper surface of the insulating source/drain cap.

Abstract: A method of manufacturing a semiconductor device includes forming an interlayer insulating film over a main surface of a semiconductor substrate, forming a first conductive film pattern for a first pad and a second conductive film pattern for a second pad over the interlayer insulating film, forming an insulating film over the interlayer insulating film such that the insulating film covers the first and the second conductive film patterns, forming a first opening portion for the first pad, the first opening portion exposing a portion of the first conductive film pattern, and a second opening portion for the second pad, the second opening portion exposing a portion of the second conductive film pattern, in the insulating film, and forming a first plated layer by plating over the portion of the first conductive film pattern exposed in the first opening portion, and a second plated layer.

Abstract: A drift layer and a source region have a first conductivity type. A base region has a second conductivity type. A first trench penetrates the source region and the base region. A gate electrode is provided in the first trench through a gate insulation film. A first relaxation region is disposed below the first trench, and has the second conductivity type. A source pad electrode is electrically connected to the first relaxation region. A gate pad electrode is disposed in a non-element region. An impurity region is disposed in the non-element region, is provided on the drift layer, and has the first conductivity type. A second trench penetrates the impurity region. A second relaxation region is disposed below the second trench, and has the second conductivity type.

Abstract: A display device including a base layer including a thin film transistor, a pixel definition layer including an opening, first to third organic light emitting elements each including a first electrode, a second electrode, and a light emitting layer therebetween, an encapsulation member including a first inorganic layer covering the organic light emitting elements, a second inorganic layer disposed thereon, a first color conversion pattern disposed between the inorganic layers and overlapping the first organic light emitting element, and a second color conversion pattern disposed between the inorganic layers and overlapping the second organic light emitting element, and first and second color filter patterns having different colors from each other and overlapping the first and second color conversion patterns, respectively, in which colors of light emitted from the first and second color conversion patterns are substantially the same as colors of the first and second color filter patterns, respectively.

Abstract: A method of manufacturing a semiconductor device includes: forming one or more transistor cells in a first region of a semiconductor substrate, the semiconductor substrate having a second region that is devoid of transistor cells; forming a first dielectric material over the first and second regions; forming a second dielectric material over the first dielectric material; forming a pn diode in the first dielectric material over the second region; etching first contact grooves into a p-type region of the pn diode, second contact grooves into an n-type region of the pn diode, and third contact grooves into the first region of the semiconductor substrate at the same time using a common contact formation process; and filling the first contact grooves, the second contact grooves and the third contact grooves with an electrically conductive material.

Abstract: A pixel definition layer for defining a light emitting device, an array substrate and a display panel are provided. The pixel definition layer includes a plurality of recessed parts, each of the plurality of recessed parts includes a bottom and an entire sidewall extending upwards from the bottom; and at least one of the plurality of recessed parts has the entire sidewall provided with a position-limiting structure.

Abstract: A device includes a fin extending from a semiconductor substrate, a gate stack over and along a sidewall of the fin, an isolation region surrounding the gate stack, an epitaxial source/drain region in the fin and adjacent the gate stack, and a source/drain contact extending through the isolation region, including a first silicide region in the epitaxial source/drain region, the first silicide region including NiSi2, a second silicide region on the first silicide region, the second silicide region including TiSix, and a conductive material on the second silicide region.

Abstract: A method of fabricating a semiconductor structure includes providing an engineered substrate including a polycrystalline substrate, a barrier layer encapsulating the polycrystalline substrate, and a bonding layer coupled to the barrier layer. The method further includes forming a first silicon layer coupled to the bonding layer, forming a dielectric layer coupled to the first silicon layer, forming a second silicon layer coupled to the dielectric layer, removing a portion of the second silicon layer and a corresponding portion of the dielectric layer to expose a portion of the first silicon layer, forming a gallium nitride (GaN) layer coupled to the exposed portion of the first silicon layer, forming a gallium nitride (GaN) based device coupled to the GaN layer, and forming a silicon-based device coupled to a remaining portion of the second silicon layer.

Abstract: A quantum device with spin qubits, comprising: a semiconductor portion arranged on a buried dielectric layer of a semiconductor-on-insulator substrate also including a semiconductor support layer, wherein first distinct parts each form a confinement region of one of the qubits and are spaced apart from one another by a second part forming a coupling region between the confinement regions of the qubits; front gates each at least partially covering one of the first parts of the semiconductor portion; and wherein the support layer comprises a doped region a part of which is arranged in line with the second part of the semiconductor portion and is self-aligned with respect to the front gates, and forms a back gate controlling the coupling between the confinement regions of the qubits.

Abstract: A semiconductor device includes. A first epi-layer and a second epi-layer are each located in a first region of the semiconductor device. A first dielectric fin is located between the first epi-layer and the second epi-layer. The first dielectric fin has a first dielectric constant. A third epi-layer and a fourth epi-layer are each located in a second region of the semiconductor device. A second dielectric fin is located between the third epi-layer and the fourth epi-layer. The second dielectric fin has a second dielectric constant that is less than the first dielectric constant.

Abstract: Disclosed herein are quantum dot devices with single electron transistor (SET) detectors. In some embodiments, a quantum dot device may include: a quantum dot formation region; a group of gates disposed on the quantum dot formation region, wherein the group of gates includes at least first, second, and third gates, spacers are disposed on sides of the first and second gates, wherein a first spacer is disposed on a side of the first gate proximate to the second gate, and a second spacer, physically separate from the first spacer, is disposed on a side of the second gate proximate to the first gate, and the third gate is disposed between the first and second gates and extends between the first and second spacers; and a SET disposed on the quantum dot formation region, proximate to the group of gates.

Abstract: A silicon carbide semiconductor device includes an insulated-gate electrode structure that is formed inside a gate trench that goes through a base region and reaches a upper portion of a current transport layer to control a primary current flowing through the base region; a current suppression layer of the second conductivity type embedded within an upper portion of the current transport layer; a control electrode isolation insulating film filled into a control electrode isolation trench that goes through the base region and reaches an upper portion of the current suppression layer; and a control electrode pad disposed on the control electrode isolation insulating film, wherein an upper portion of the current suppression layer abuts a sidewall of the control electrode isolation insulating film, and a lower portion of the current suppression layer covers at least bottom corners of the control electrode isolation insulating film.

Abstract: Embodiments of the present invention provide a multiple fin field effect transistor (finFET) with low-resistance gate structure. A metallization line is formed in parallel with the gate, and multiple contacts are formed over the fins which connect the metallization line to the gate. The metallization line provides reduced gate resistance, which allows fewer transistors to be used for providing In-Out (IO) functionality, thereby providing space savings that enable an increase in circuit density.