Abstract: A light emitting device includes a light emitting diode chip, a light transmitting member, a white barrier member, and a conductive adhesive member. The light emitting diode chip has a bump pad formed on the lower surface thereof. The light transmitting member covers the side surfaces and the upper surface of the light emitting diode chip, and the upper surface of the light transmitting member has a rectangular shape having long sides and short sides. The conductive adhesive member is formed to extend through the white barrier member from the bottom of the light emitting diode chip. The upper surface of the conductive adhesive member is connected to the bump pad of the light emitting diode chip, and the lower surface of the conductive adhesive member is exposed at the lower surface of the white barrier member.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first interconnect arranged within an inter-level dielectric (ILD) layer. The first interconnect has opposing sidewalls that are both laterally separated from closest neighboring interconnects within the ILD layer by one or more air-gaps along a cross-sectional view. A second interconnect is arranged within the ILD layer. The ILD layer laterally contacts opposing sidewalls of the second interconnect as viewed along the cross-sectional view.

Abstract: A chip-on-film (COF) package includes a film including a reinforcement area, a bending area and a chip mounting area, a conductive pattern layer disposed on the film in the reinforcement area and in the bending area, and at least partially in the chip mounting area, a chip mounted on a portion of the conductive pattern layer in the chip mounting area, a first insulating layer having a first elastic modulus and extending over the conductive pattern layer in the reinforcement area, and a second insulating layer having a second elastic modulus and extending over the conductive pattern layer in the bending area, wherein the first elastic modulus is greater than the second elastic modulus, and the film is intact in the chip mounting area.

Abstract: The present technology relates to an imaging element, a method of manufacturing the imaging element, and an electronic apparatus that make it possible to suppress generation of a void in an infrared cutoff filter layer. The imaging element includes: a light receiving sensor that performs photoelectric conversion of incoming light; a cover glass that protects a top surface side serving as a light incidence surface of the light receiving sensor; a frame that is disposed in an outer peripheral portion between the light receiving sensor and the cover glass, and is formed with use of an inorganic material; and an infrared cutoff filter layer that is formed on an inner side on a same plane as the frame. The present technology is applicable to, for example, an imaging element having a CSP structure, and the like.

Abstract: The present technology relates to an imaging element, a method of manufacturing the imaging element, and an electronic apparatus that make it possible to suppress generation of a void in an infrared cutoff filter layer. The imaging element includes: a light receiving sensor that performs photoelectric conversion of incoming light; a cover glass that protects a top surface side serving as a light incidence surface of the light receiving sensor; a frame that is disposed in an outer peripheral portion between the light receiving sensor and the cover glass, and is formed with use of an inorganic material; and an infrared cutoff filter layer that is formed on an inner side on a same plane as the frame. The present technology is applicable to, for example, an imaging element having a CSP structure, and the like.

Abstract: An optical system (400) including a microlens array (104), an image sensor (108) and a PCB (206). The microlens array (104) is bonded to the image sensor (108) with glue lines (804) or glue drops (802) dispensed around the non-active area (404) of the microlens array (104). The image sensor (108) may be bonded to the PCB (206) with a layer of adhesive material (502) applied only on a central region of the image sensor (108). Alternatively, the image sensor can rest onto a thermally conductive resin layer (109) placed over a stiffener (207), and the image sensor can be attached to the PCB (206) by one or more glue drops (111) or glue lines (113) arranged on at least one side of the image sensor (108) or by an adhesive layer (115) laterally surrounding the image sensor (108). The optical system (400) solves the problem of misalignment between the image sensor and the microlens array caused by changes in temperature.

Abstract: Described herein are systems and methods of utilizing nanochannels generated in the sacrificial layer of a semiconductor substrate to increase epitaxial lift-off speeds and facilitate reusability of GaAs substrates. The provided systems and methods may utilize unique nanochannel geometries to increase the surface area exposed to the etchant and further decrease etch times.

Abstract: Wrap-around contact structures for semiconductor nanowires and nanoribbons, and methods of fabricating wrap-around contact structures for semiconductor nanowires and nanoribbons, are described. In an example, an integrated circuit structure includes a semiconductor nanowire above a first portion of a semiconductor sub-fin. A gate structure surrounds a channel portion of the semiconductor nanowire. A source or drain region is at a first side of the gate structure, the source or drain region including an epitaxial structure on a second portion of the semiconductor sub-fin, the epitaxial structure having substantially vertical sidewalls in alignment with the second portion of the semiconductor sub-fin. A conductive contact structure is along sidewalls of the second portion of the semiconductor sub-fin and along the substantially vertical sidewalls of the epitaxial structure.

Abstract: Disclosed are a semiconductor package and a method of fabricating the same. The semiconductor package may include a semiconductor chip structure, a transparent substrate disposed on the semiconductor chip structure, a dam placed on an edge of the semiconductor chip structure and between the semiconductor chip structure and the transparent substrate, and an adhesive layer interposed between the dam and the semiconductor chip structure. The semiconductor chip structure may include an image sensor chip and a logic chip, which are in contact with each other, and the image sensor chip may be closer to the transparent substrate than the logic chip.

Abstract: A radiation-emitting component (1) is specified with a carrier (2) having a cavity (9), a radiation-emitting semiconductor chip (3) which is arranged on a bottom surface delimiting the cavity (9) and which is configured to generate primary electromagnetic radiation, and a first reflector layer (6) arranged above a top surface of the semiconductor chip (3), wherein the carrier (2) is transparent in places to the primary electromagnetic radiation, and the semiconductor chip (3) is spaced apart from at least one side surface delimiting the cavity (9).

Abstract: A display panel and a manufacturing method of the display panel are provided. The display panel includes: a first substrate, a second substrate disposed opposite to the first substrate, a driving circuit disposed opposite to the first substrate and adjacent to a side of the second substrate, and a color resist layer disposed opposite to the driving circuit and adjacent to a side of the first substrate; wherein the color resist layer includes colorized color resist layers and a colorized quantum dot layer, and the driving circuit is a bottom-emission type light-emitting-diode (LED) driving circuit.

Abstract: A layout structure of flexible circuit board includes a flexible substrate, a chip and a circuit layer. A chip mounting area and a circuit area are defined on a top surface of the flexible substrate. The chip is mounted on the chip mounting area, a space exists between a first bump and a second bump of the chip, and there are no additional bumps between the first and second bumps. A first inner lead, a second inner lead, a first dummy lead and a second dummy lead of the circuit layer are located on the chip mounting area. The first and second inner leads are electrically connected to the first and second bumps respectively. The first dummy lead is connected to the first inner lead and adjacent to the first bump, and the second dummy lead is connected to the second inner lead and adjacent to the second bump.

Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: Semiconductor devices having silicon doping for laser splash protection, along with associated methods and systems, are disclosed herein. In one embodiment, a semiconductor device includes a silicon layer and a circuitry layer with a plurality of semiconductor devices. A doped silicon region is formed on a front side of the silicon layer upon which the circuitry layer is deposited. The doped silicon region is positioned under the circuitry layer. The doped silicon region has a dopant concentration of at least 1015 cm?3.

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device in which first to third conductors are placed over a first oxide; first and second oxide insulators are placed respectively over the second and third conductors; a second oxide is placed in contact with a side surface of the first oxide insulator, a side surface of the second oxide insulator, and a top surface of the first oxide; a first insulator is placed between the first conductor and the second oxide; and the first oxide insulator and the second oxide insulator are not in contact with the first to third conductors, the first insulator, and the first oxide.

Abstract: A Complementary Metal Oxide Semiconductor (CMOS) wavefront sensor including a sensor element having an array of photodiodes and a passivation layer covering the sensor element. The sensor further includes a binary lens formed in the passivation layer and arranged to focus incident light onto the sensor element.

Abstract: Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a first dielectric layer including a first pad, a second dielectric layer on the first dielectric layer, a through electrode that penetrates the second dielectric layer and is electrically connected to the first pad, an upper passivation layer on the second dielectric layer, a second pad on the upper passivation layer, and an upper barrier layer between the upper passivation layer and the second pad. The first pad and the through electrode include a first material. The second pad includes a second material that is different from the first material of the first pad and the through electrode. The second pad includes a first part on the upper passivation layer, and a second part that extends from the first part into the upper passivation layer and is connected to the through electrode.

Abstract: A semiconductor device includes an active pattern including a channel region. The channel region is disposed between first and second source/drain patterns that are spaced apart from each other in a first direction. The channel region is configured to connect the first and second source/drain patterns to each other. A gate electrode is disposed on a bottom surface of the active pattern and is disposed between the first and second source/drain patterns. An upper interconnection line is disposed on a top surface of the active pattern opposite to the bottom surface of the active pattern and is connected to the first source/drain pattern.

Abstract: A light-emitting unit includes: a wiring board; a plurality of light-emitting elements provided on the wiring board and electrically coupled with a wire layer of the wiring board; a light reflecting member provided on the wiring board, the light reflecting member covering a lateral surface of each of the plurality of light-emitting elements; a light diffusing layer covering the plurality of light-emitting elements and the light reflecting member; a wavelength conversion layer located on or above the light diffusing layer; and a plurality of light reflecting layers located between the light diffusing layer and the wavelength conversion layer, each of the light reflecting layers being located above a corresponding one of the plurality of light-emitting elements. An upper surface of the light reflecting member has a recess which includes at least one concave surface, and there is a space between the concave surface and the light diffusing layer.

Abstract: Integrated circuit (IC) packages having a through-via interposer with an embedded die, as well as related structures, devices, and methods, are disclosed herein. For example, in some embodiments, an IC package may include a through-via interposer with an embedded die, the through-via connections having front to back conductivity. In some embodiments, a die may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the embedded die. In some embodiments, a second IC package in a package-on-package (PoP) arrangement may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the conductive vias.