Abstract: The present disclosure relates to a display device, a tiling display device, and a method of manufacturing a tiling display device and the display device according to an aspect of the present disclosure includes: a display panel; a metal plate disposed on a rear side of the display panel; a plurality of magnets disposed on a rear side of the metal plate; and a plurality of ferromagnetic materials disposed on both side of the plurality of magnets. Therefore, the plurality of magnets and the plurality of ferromagnetic materials are used to easily attach and detach the display device and install, maintain, and repair the display device.

Abstract: A superconductor device includes a high superconductivity transition temperature enhanced from the raw material transition temperature. The superconductor device includes a matrix material and a core material. The enhancing matrix material and the core material together create a system of strongly coupled carriers. A plurality of low-dimensional conductive features can be embedded in the matrix. The low-dimensional conductive features (e.g., nanowires or nanoparticles) can be conductors or superconductors. An interaction between electrons of the low-dimensional conductive features and the enhancing matrix material can promote excitations that increase a superconductivity transition temperature of the superconductor device.

Abstract: A light emitting module includes a board, light sources, first and second wirings, and an insulating member. Each of the light sources includes first and second electrodes exposed from an upper side. The first wiring includes first extending portions and first connecting portions. The second wiring includes second extending portions and second connecting portions. The insulating member covers the first wiring and the second extending portions of the second wiring while a portion of each of the second extending portions of the second wiring is exposed from the insulating member through a corresponding one of the openings. The second connecting portions of the second wiring are arranged on or above a part of the insulating member positioned on or above the first connecting portions of the first wiring. The second connecting portions of the second wiring are respectively connected to the second extending portions at the openings.

Abstract: A semiconductor device includes a semiconductor layer, first and second electrodes, one or more gate electrodes, and an array of structures. The semiconductor layer has first and second sides opposite to each other in a first direction. The semiconductor layer is single crystal silicon. The array of structures is in the semiconductor layer and arranged in a second direction perpendicular to the first direction and along a [100] direction of the single crystal silicon and in a third direction that is perpendicular to the first direction and not perpendicular to the second direction. A first distance between first and second ones of the structures adjacent to each other in the third direction is less than a second distance between the first one and a third one of the structures adjacent to the first one in the second direction.

Abstract: A sensor package structure is provided and includes a substrate, a sensor chip disposed on the substrate, a plurality of wires electrically coupled to the substrate and the sensor chip, a light-permeable layer, and a colloid formed on the substrate to fix the light-permeable layer. The colloid covers the wires, a peripheral portion of the sensor chip, and lateral surfaces of the light-permeable layer. A top curved surface of the colloid is partially arranged beside the lateral surfaces. In a cross section of the sensor package structure, the top curved surface has a reference point spaced apart from one of the lateral surfaces adjacent thereto by 100 ?m, a top edge of the top curved surface and the reference point define a connection line, and the connection line and the one of the lateral surfaces have an acute angle within a range from 25 degrees to 36 degrees.

Abstract: A semiconductor apparatus includes a channel layer, a barrier layer, a source contact and a drain contact, a first doped group III-V semiconductor, a group III-V semiconductor, and a second doped group III-V semiconductor. The barrier layer is disposed on the channel layer. The source contact and the drain contact are disposed on the channel layer. The first doped group III-V semiconductor is disposed on the barrier layer. The group III-V semiconductor is disposed on the first doped group III-V semiconductor and between the source contact and the drain contact. The second doped group III-V semiconductor is disposed on the group III-V semiconductor and between the source contact and the drain contact. The group III-V semiconductor has a central region covered by the second doped group III-V semiconductor and a peripheral region free from coverage by the second doped group III-V semiconductor.

Abstract: Provided is a semiconductor architecture including a carrier substrate, a landing pad included in the carrier substrate, a first semiconductor device provided on a first surface of the carrier substrate, the first semiconductor device including a first component provided on the landing pad, and a second semiconductor device provided on a second surface of the carrier substrate, a second component protruding from the second semiconductor device being provided on the landing pad.

Abstract: In a general aspect, an integrated quantum circuit includes a first substrate and a second substrate. The first substrate includes a first surface and a recess formed in the first substrate along the first surface. The recess has a recess surface and is configured to enclose a quantum circuit element. The first substrate includes a first electrically-conductive layer disposed on the first surface and covering at least a portion of the recess surface. The first electrically-conductive layer includes a first superconducting material. The second substrate includes a second surface and a quantum circuit element. The second substrate includes a second electrically-conductive layer on the second surface that includes a second superconducting material. The first substrate is adjacent the second substrate to enclose the quantum circuit device within the recess. The first electrically-conductive layer of the first substrate is electrically-coupled to the second electrically-coupled layer of the second substrate.

Abstract: A semiconductor light emitting device has: a semiconductor light emitting element; a substrate on which the semiconductor light emitting element is mounted and which includes a substrate bonding surface to which a substrate metal layer having an annular shape is fixed; and a light transmitting cap including a window portion containing glass and transmitting radiation light of the semiconductor light emitting element and a flange having a bottom surface to which an annular flange fixation layer having a size corresponding to the substrate metal layer is fixed, and sealed and bonded to the substrate with a space housing the semiconductor light emitting element by bonding of the flange fixation layer to the substrate metal layer. The flange fixation layer contains a ceramic layer welded to the flange and a metal layer formed on the ceramic layer.

Abstract: A semiconductor device includes a substrate and a first active region on a first side of the substrate. The semiconductor device further includes a first gate structure surrounding a first portion of the first active region. The semiconductor device further includes a second active region on a second side of the substrate, wherein the second side is opposite the first side. The semiconductor device further includes a second gate structure surrounding a first portion of the second active region. The semiconductor device further includes a gate via extending through the substrate, wherein the gate via directly connects to the first gate structure, and the gate via directly connects to the second gate structure.

Abstract: Methods, systems, and devices for dimension control for raised lines are described. For example, the techniques described herein may be used to fabricate raised lines (e.g., orthogonal raised lines). The lines may be fabricated such that an overall area of each line is consistent. In some examples, the techniques may be applied to form memory cells across multiple memory tiles, multiple memory arrays, and/or multiple wafers such that each memory cell comprises a consistent overall area. To form the lines and/or memory cells, a material associated with a desired properties may be deposited after performing a first cut. Due to the properties associated with the material, a width of the second cut may be affected, thus resulting in more uniform lines and/memory cells.

Abstract: Epitaxial oxide plugs are described for imposing strain on a channel region of a proximate channel region of a transistor. The oxide plugs form epitaxial and coherent contact with one or more source and drain regions adjacent to the strained channel region. The epitaxial oxide plugs can be used to either impart strain to an otherwise unstrained channel region (e.g., for a semiconductor body that is unstrained relative to an underlying buffer layer), or to restore, maintain, or increase strain within a channel region of a previously strained semiconductor body. The epitaxial crystalline oxide plugs have a perovskite crystal structure in some embodiments.

Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

Abstract: A light emitting diode having an improved heat dissipation effect includes a light source unit emitting a light to a front surface and including a light emitting part, a first electrode pad, and a second electrode pad. The light emitting diode further includes a lead frame unit disposed on a rear surface of the light source unit and including first and second lead terminals respectively connected to the first and second electrode pads. The light emitting diode also includes at least one of the first and second lead terminals includes an upper conductive layer, an intermediate conductive layer, and a lower conductive layer which are disposed on different layers and electrically connected to one another.

Abstract: An image sensor includes a substrate including a pixel region and a pad region and having a first surface and a second surface opposite to the first surface, the pad region of the substrate being provided with a first recess which is recessed to a first depth from the second surface toward the first surface and the pixel region of the substrate being provided with a plurality of unit pixels, an interlayer insulating layer disposed on the first surface, an interconnection line disposed in the interlayer insulating layer, a conductive pad disposed in the first recess of the pad region, and a plurality of penetration structures disposed in the pad region of the substrate and extending from a bottom surface of the first recess to the first surface of the substrate, and electrically connecting the conductive pad to the interconnection line.

Abstract: A microelectronic device includes a die with input/output (I/O) terminals, and a dielectric layer on the die. The microelectronic device includes electrically conductive pillars which are electrically coupled to the I/O terminals, and extend through the dielectric layer to an exterior of the microelectronic device. Each pillar includes a column electrically coupled to one of the I/O terminals, and a head contacting the column at an opposite end of the column from the I/O terminal. The head extends laterally past the column in at least one lateral direction. Methods of forming the pillars and the dielectric layer are disclosed.

Abstract: Disclosed herein are isolation regions in integrated circuit (IC) structures, as well as related methods and components. For example, in some embodiments, an IC component may include: a first region including silicon; a second region including alternating layers of a second material and a third material, wherein the second material includes silicon and germanium, the third material includes silicon, and individual ones of the layers in the second region has a thickness that is less than 3 nanometers; and a third region including alternating layers of the second material and the third material, wherein individual ones of the layers in the third region has a thickness that is greater than 3 nanometers, and the second region is between the first region and the third region.

Abstract: An image capturing device unit includes a multilayer substrate, an image capturing device mounted on one face of the multilayer substrate, and components mounted on the other face of the multilayer substrate. The multilayer substrate includes electrodes to electrically connect the image capturing device and the multilayer substrate, vias that electrically connect the electrodes and the components, first wiring electrically connected to the vias, second wiring on layers of the multilayer substrate, and a non-wired region that insulates the vias and the first wiring from the second wiring on each of the layers. The vias are located in the multilayer substrate so that, on a projection plane given when the multilayer substrate is viewed in a layering direction of the multilayer substrate, there is no area in which the non-wired region overlaps with a region where the image capturing device is arranged throughout the layers.

Abstract: A method of fabricating a solid-state image sensor, including steps of forming a second type doped semiconductor layer and a semiconductor material layer sequentially on a first type doped semiconductor substrate to constitute a photoelectric conversion portion, forming a multilayer structure on the semiconductor material layer, wherein a refractive index of the multilayer structure gradually decreases from a bottom layer to a top layer of the multilayer structure and is smaller than a refractive index of the semiconductor material layer, and performing a photolithography process to the multiplayer structure and the photoelectric conversion portion to form multiple micro pillars, wherein the micro pillars protrude from the semiconductor material layer and are isolated by recesses extending into the photoelectric conversion portion.

Abstract: A semiconductor structure includes a source/drain (S/D) feature; one or more channel semiconductor layers connected to the S/D feature; a gate structure engaging the one or more channel semiconductor layers; a first silicide feature at a frontside of the S/D feature; a second silicide feature at a backside of the S/D feature; and a dielectric liner layer at the backside of the S/D feature, below the second silicide feature, and spaced away from the second silicide feature by a first gap.