Abstract: A method of forming a semiconductor device is provided. The method includes depositing an aluminum-base interlayer on a silicon substrate, the aluminum-base interlayer having a thickness of less than about 100 nanometers; and growing a III-V compound material on the aluminum-base interlayer. The aluminum-base interlayer deposited directly on silicon allows for continuous and planar growth of III-V compound materials on the interlayer, which facilitates the manufacture of high quality electronic devices.

Abstract: A quantum rod, a synthesis method of the quantum rod and a quantum rod display device are discussed. The quantum rod according to an embodiment includes a core, a first shell covering the core, and a second shell covering a side of the first shell. In the quantum rod, a first thickness of the first shell is greater than a second thickness of the second shell, and a first length of the first shell is smaller than a second length of the second shell.

Abstract: This application discloses a new ultrasonic measurement technique to measure the velocity and displacement of the objects. Minimizing the effect of amplitude modulation from ultrasonic phase and amplitude extraction system, is a novel approach to significantly improve the accuracy and precision of the measurements. The possibility of the measurements using a single ultrasonic transducer functioning as a transmitter and receiver in continuous measurement, may be a significant advantage of this measurement technique over conventional methods. The ability of doing measurement on the objects much smaller than the wave wavelength may be an advantage of this innovative measurement technique comparing with contemporary ultrasonic measurement systems that are limited by the wavelength of the sound. Applications for this novel measurement system are also disclosed in this application.

Abstract: A display device includes: a substrate including a bending area located between a first region and a second region; an organic layer disposed over the substrate, an upper surface of the organic layer including an uneven surface in the bending area, the uneven surface including a plurality of protrusions; and a conductive layer extending from the first region to the second region across the bending area, the conductive layer being located over the organic layer and including a plurality of through holes.

Abstract: A method for forming a semiconductor structure using first and second conductive materials, and having first and second trenches with first and second critical dimensions. The second conductive material exhibits a lower resistivity than the first conductive material at a film thickness corresponding to the second critical dimension and the second conductive material exhibits a higher resistivity than the first conductive material at a film thickness corresponding to the first critical dimension. An initial semiconductor structure has the first trench having the first critical dimension and the second trench having the second critical dimension. The second critical dimension is larger than the first critical dimension. A first conductive structure made from one of the first and second conductive materials is formed in the first trench. A second conductive structure made from another of the first and second conductive materials is formed in the second trench.

Abstract: A semiconductor switching element includes a first gate electrode and a second gate electrode. The first gate electrode is disposed, via a first gate insulating film, inside a first trench that extends from an upper surface of an emitter region to reach a semiconductor layer, and intersects with the emitter region, a base region, and a charge storage layer. The second gate electrode is disposed, via a second gate insulating film, inside a second trench that extends from the upper surface of the emitter region and an upper surface of a conductive region to reach the semiconductor layer, and is adjacent to the emitter region, the base region, the charge storage layer, and the conductive region. The second trench is smaller in depth than the first trench, and the second trench is smaller in width than the first trench.

Abstract: A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a trench in the IMD layer; performing a treatment process to transform part of the IMD layer into a damaged layer adjacent to the trench; forming a protective layer on a sidewall of the damaged layer; forming a metal layer in the trench; and removing the damaged layer to form an air gap adjacent to the protective layer.

Abstract: A light-emitting device package of embodiments comprises: a substrate; a light-emitting structure which is arranged below the substrate comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first electrode which is connected to the first conductive type semiconductor layer; a first insulation layer which is arranged on the side section of the light-emitting structure and the side and lower sections of the first electrode; a first pad which passes through the first insulation layer and is connected to the first conductive type semiconductor layer; a second electrode which passes through the first insulation layer, the first conductive type semiconductor layer and the active layer and is connected to the second conductive type semiconductor layer; a second pad which is connected to the second electrode; and a protective layer which extends from the top of the first insulation layer arranged on the side section of the light-emitting structure

Abstract: To provide a curable fluorinated polymer excellent in solubility in an alcohol, a method for its production and a cured product of the fluorinated polymer. A fluorinated polymer comprising units represented by the following formula (1), wherein in at least some of the units represented by the formula (1), Z1 is NR1NR2H or NR3OR4: in the formula (1), X1 and X2 are each independently a hydrogen atom or a fluorine atom, Q1 is a single bond or an etheric oxygen atom, Rf1 is a fluoroalkylene group, or a fluoroalkylene group with at least 2 carbon atoms, having an etheric oxygen atom between carbon-carbon atoms, Z1 is NR1NR2H, NR3OR4 or OR5, R1, R2, R3 and R4 are each independently a hydrogen atom or an alkyl group, and R5 is an alkyl group.

Abstract: A sensor system and method includes first and second sensing elements, digital sensors, a host computer and a digital bus. The first sensing element is configured to collect first sensor data and the second sensing element is configured to collect second sensor data. The digital sensor includes a controller that is configured to receive the first and second sensor data and process the first sensor data together with the second sensor data to generate processed data. The host computer is configured to receive the processed data from the digital sensor over the digital bus.

Abstract: Various sensors may be used to gather information about items at an inventory location, such as items on a shelf. Weight sensors may be used to gather weight data while capacitive sensors detect the presence of one or more objects such as the items themselves, a user reaching towards the shelf, and so forth. Data from a capacitive sensor may be used to determine that an activity is taking place at the shelf and to trigger processing of weight data from the weight sensor. A combination of a change in capacitance that exceeds a capacitance threshold and a change in weight that exceeds a weight threshold may be used to determine an event, such as a pick or place from the inventory location.

Abstract: In a semiconductor device according to an embodiment, ends of conductor portions are electrically connected to an overvoltage protection diode so that depletion occurs in a diffusion layer in a portion near an insulating film in a reverse bias application state, and/or ends of conductor portions are electrically connected to the overvoltage protection diode so that depletion occurs in a peripheral semiconductor region in a portion near the insulating film in the reverse bias application state.

Abstract: Method and system for performing close-loop analysis to electronic component failures are provided. The system establishes an electronic component fault tree of physics of failure (FTPF), converts the FTPF into a failure locating fault tree, establishes an electronic component fault dictionary with the cause of failure mechanism corresponding to failure characteristics, and performs close-loop analysis to the electronic component according to the fault tree and the fault dictionary.

Abstract: Provided is a continuous material pattern, the pattern is selected to have a plurality of material-free voids, the material including at least one perovskite material.

Abstract: A programmable AC load in communication with an equipment under test (EUT) is disclosed. The EUT generates an equipment under test voltage. The programmable alternating current (AC) load includes an active load profiler (ALP), a grid-connecter inverter, and an operational mode selector. The operational mode selector is in communication with an AC side of the grid-connected inverter. The operational mode selector places the programmable AC load in either a regenerative mode where the equipment under test voltage is sent to a main grid or a dissipative mode where the equipment under test voltage is dissipated by heat.

Abstract: An electroluminescent device and a manufacturing method thereof, and a display apparatus are provided. The electroluminescent device includes a base substrate; and an electron transport layer, disposed on the base substrate, the electron transport layer includes a first film layer for transporting electrons and a regulating structure arranged in contact with the first film layer, and the regulating structure is configured to regulate an electron mobility of the electron transport layer.

Abstract: A magnetic memory according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a first layer disposed between the first magnetic layer and the third magnetic layer, wherein the first layer contains at least one element selected from the group consisting of Co, Fe, Ni, and Mn, and at least one element selected from the group consisting of Ta, Mo, Zr, Nb, Hf, V, Ti, Sc, and La.

Abstract: A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a first polygon shape in a top view of the light-emitting device, wherein the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly joining at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and the plurality of inclined surfaces comprises a second polygon shape in the cross-sectional view of the light-emitting device.

Abstract: An electrostatic discharge (ESD) protection apparatus is provided. A first power rail provides first reference voltage. A second power rail provides a second reference voltage. A detection circuit generates a detection result according to whether ESD stress occurs on the first power rail. A first N-type MOSFET has its gate serving as a control terminal. A second N-type MOSFET has its gate serving as a second control node. An intermediate power rail provides an intermediate voltage between the first and the second reference voltages. A first switching circuit couples the first control node to the intermediate power rail or to the first power rail according to the detection result. A second switching circuit couples the second control node to the second power rail or to the first control node according to the detection result.

Abstract: Provided is a white organic electroluminescent device, composed of a substrate, an anode layer, an anode modification layer, a hole transporting-electron blocking layer, a hole-dominated light-emitting layer, an electron-dominated light-emitting layer, a hole blocking-electron transporting layer, a cathode modification layer, and a cathode layer arranged in turn, wherein the electron-dominated light-emitting layer is composed of an organic sensitive material, a blue organic light-emitting material, and an electron-type organic host material.