Abstract: A package assembly includes a silicon photonics chip having an optical waveguide exposed at a first side of the chip and an optical fiber coupling region formed along the first side of the chip. The package assembly includes a mold compound structure formed to extend around second, third, and fourth sides of the chip. The mold compound structure has a vertical thickness substantially equal to a vertical thickness of the chip. The package assembly includes a redistribution layer formed over the chip and over a portion of the mold compound structure. The redistribution layer includes electrically conductive interconnect structures to provide fanout of electrical contacts on the chip to corresponding electrical contacts on the redistribution layer. The redistribution layer is formed to leave the optical fiber coupling region exposed. An optical fiber is connected to the optical fiber coupling region in optical alignment with the optical waveguide within the chip.

Abstract: Embodiments of the disclosure are directed to fiber optic closure terminals with increased versatility. A fiber optic closure terminal is provided that includes a mount assembly for mounting at least one fiber optic module within a housing. The mount assembly includes a pivotable plate and a translatable plate configured to pivot the at least one fiber optic module greater than ninety degrees thereby providing better access to fiber management features at a bottom of the base of the fiber optic closure terminal. The improved access increases versatility by facilitating installation and/or maintenance of connecting a fiber optic cable to optical connections in the fiber optic module(s). The fiber optic closure terminal can also include a strain relief assembly configured for attachment and removal from the base of the housing for increased versatility regarding installation and/or maintenance of the fiber optic closure terminal.

Abstract: An optical device has a light-transmitting substrate, an optical coupling-out configuration, and an optical arrangement. The light-transmitting substrate has at least two major surfaces and guides light by internal reflection between the major surfaces. The optical coupling-out configuration couples the light, guided by internal reflection, out of the light-transmitting substrate toward an eye of a viewer. The optical arrangement is associated with at least one of the two major surfaces, and has a first optical element and a second optical element. The optical elements are optically coupled to each other to define an interface region associated with at least a portion of the coupling-out configuration. The interface region deflects light rays that emanate from an external scene that are incident to the optical arrangement at a given range of incident angles.

Abstract: An optoelectronic device, including: a rib waveguide, the rib waveguide including: a ridge portion, which includes a temperature-sensitive optically active region, and a slab portion, positioned adjacent to the ridge portion; the device further comprising a heater, disposed on top of the slab portion wherein a part of the heater closest to ridge portion is at least 2 ?m away from the ridge portion. The device may also have a heater provided with a bottom cladding layer, and may also include various thermal insulation enhancing cavities.

Abstract: A method of fabricating a device coupon including a waveguide which is suitable for use in a micro-transfer printing process. The method comprises the steps, on a wafer, of: depositing a lower cladding layer on an uppermost surface of the wafer; providing a silicon nitride guiding layer on an uppermost surface of the lower cladding; depositing an upper cladding over at least an uppermost surface of the silicon nitride guiding layer; providing a tether over the coupon, and etching away a region of the uppermost layer of the wafer located between the lower cladding layer and a substrate of the wafer, thereby leaving the lower cladding layer, silicon nitride guiding layer, and upper cladding layer suspended above the wafer via the tether.

Abstract: A breakout cable, including a first portion of the cable coupled to a network switch, wherein at least a first section of the first portion is located within a volume inside of side walls of the computing rack, the first section of the first portion including first and second connectors and extending in a first direction; a second portion of the cable including a third connector, the third connector coupled to the first connector of the first portion and the first network interface module connected to a first server, the second portion of the cable extending in a second direction transverse to the first direction; a third portion of the cable including a fourth connector and, the fourth connector coupled to the second connector of the first portion and the second network interface module connected to a second server, the third portion of the cable extending in the second direction.

Abstract: A semiconductor structure and a fabrication method are provided. The semiconductor structure includes: a base substrate, an optical waveguide layer over the base substrate; a first dielectric layer over the base substrate; a cavity between the first dielectric layer and the optical waveguide layer; and a second dielectric layer on the first dielectric layer and the optical waveguide layer. The cavity is located on sidewall surfaces of the optical waveguide layer and has a bottom coplanar with a bottom of the optical waveguide layer. The second dielectric layer is located on a top of the cavity and seals the cavity.

Abstract: A compact silicon waveguide mode converter, a dielectric meta-surface structure based on periodical oblique subwavelength perturbations, including a top silicon structure with oblique subwavelength perturbations etched in certain periods with period length of ?, a duty cycle and an oblique angle ? on the SOI substrate. The invention adopts an all-dielectric meta-surface structure with oblique subwavelength perturbation, which can achieve a compact mode conversion from fundamental mode to arbitrary high-order mode of silicon waveguide, and can improve the optical communication capacity greatly.

Abstract: Structures for an optical coupler and methods of fabricating a structure for an optical coupler. The structure includes a first waveguide core having a first tapered section and a second waveguide core having a second tapered section positioned adjacent to the first tapered section of the first waveguide core. The second tapered section is positioned with a lateral offset in a lateral direction relative to the first tapered section. The second tapered section is positioned with a vertical offset in a vertical direction relative to the first tapered section.

Abstract: A light receiving device includes a semiconductor optical amplifier formed on a principal surface of a first substrate. The semiconductor optical amplifier has a first reflection portion that is formed by an end face at one end thereof, the end face being formed to be oblique to the principal surface of the first substrate. The semiconductor optical amplifier also has a second reflection portion that is formed by an end face at the other end thereof, the end face being formed to be oblique to the principal surface of the first substrate. The light receiving device further includes a second substrate having a back surface bonded to a back surface of the first substrate, and a photodiode formed on a principal surface of the second substrate.

Abstract: A light intensity modulator includes an input optical fiber; an output optical fiber; an optical arrangement having a lens, where the optical arrangement is configured to receive light from the input optical fiber, pass the light through the lens, and direct the light to the output optical fiber; and a piezoelectric device coupled to the lens, where the piezoelectric device is configured for moving the lens to alter overlap of the output optical fiber and the light directed to the output optical fiber to modulate intensity of light in the output optical fiber.

Abstract: A photonic integrated circuit (PIC) structure includes an active region in at least an active layer over a substrate, the active region including a plurality of transistors therein. A plurality of dielectric interconnect layers are over the active region, and an opening is defined through the plurality of dielectric interconnect layers. The opening extends to at least the active layer. A barrier is within the plurality of dielectric interconnect layers and surrounding the opening. An optical element is positioned in the opening. The barrier prevents stress damage, such as cracks and/or delaminations, from propagating from or to the opening, and maintains the hermetic seal of the PIC structure.

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

Abstract: An apparatus including a light detection and ranging (LiDAR) antenna of an optical phased array includes a silicon-on-insulator substrate including a silicon wire waveguide embedded within the substrate and a grating layer disposed over the substrate. The grating layer includes a silicon nitride layer coating the silicon-on-insulator substrate and including a plurality of etchings formed in a direction perpendicular to a longitudinal axis of the optical phased array and a silicon oxynitride layer coating the silicon nitride layer and filling the etchings. The etchings are relatively thin in the direction of the longitudinal axis of the optical phased array at a first end of the optical antenna and are relatively thick in the direction of the longitudinal axis at a second end. The etchings gradually increase in thickness between the first end of the optical phased array and the second end of the optical antenna.

Abstract: This application relates to a fibre optic cable (104, 300) suitable for use with a distributed fibre optic sensor apparatus (106). The fibre optic cable includes at least one optical fibre (301) and a force transformer (304) mechanically coupled to the at least one optical fibre. The cable may also include at least one cladding later (302) and/or a compliant material (303). The cable may be surrounded by a jacket layer (306). The force transformer (304) is configured to transform transverse forces due to dimension changes of the cable arising from a temperature variation of the cable into longitudinal forces to counteract the longitudinal component of said dimension change over a tuned temperature range. In this way optical path length changes due to a change of temperature can be reduced or eliminated providing a cable which is insensitive to temperature.

Abstract: A pluggable module for use in a networking system includes a body with an electrical interface configured to be inserted into networking equipment; a head connected to the body and including a handle; and a light pipe with an entry in or near the body, the light pipe configured to provide light from inside the body to the handle. The body can include a light source directed towards the entry. The light source can be a Light Emitting Diode (LED). Advantageously, this disclosure provides an ability to support status lights in a very small surface area on a pluggable module.

Abstract: Architectures are provided for selectively outputting light for forming images, the light having different wavelengths and being outputted with low levels of crosstalk. In some embodiments, light is incoupled into a waveguide and deflected to propagate in different directions, depending on wavelength. The incoupled light then outcoupled by outcoupling optical elements that outcouple light based on the direction of propagation of the light. In some other embodiments, color filters are between a waveguide and outcoupling elements. The color filters limit the wavelengths of light that interact with and are outcoupled by the outcoupling elements. In yet other embodiments, a different waveguide is provided for each range of wavelengths to be outputted. Incoupling optical elements selectively incouple light of the appropriate range of wavelengths into a corresponding waveguide, from which the light is outcoupled.

Abstract: Optical components and associated methods of manufacturing are provided. An example optical component includes a body defined by an optical interposer substrate and a passivation layer applied to the optical interposer substrate. The optical interposer substrate defines a first surface of the body, and the passivation layer defines a second surface of the body opposite the first surface. The passivation layer includes a metallic shielding element configured to prevent interference between the first surface and the second surface. The optical component further includes an opening extending from the second surface to the optical interposer substrate, the opening defining an optical path through the passivation layer. The optical interposer substrate receives an optical signal from an optical transmitter supported by the second surface via the optical path.

Abstract: Aspects of the present disclosure are directed to configurations of compact ultra-low loss integrated photonics-based waveguides for optical gyroscope applications, and the methods of fabricating those waveguides for ease of large scale manufacturing. Four main process flows are described: (1) process flow based on a repeated sequence of oxide deposition and anneal; (2) chemical-mechanical polishing (CMP)-based process flow followed by wafer bonding; (3) Damascene process flow followed by oxide deposition and anneal, or wafer bonding; and (4) CMP-based process flows followed by oxide deposition. Any combination of these process flows may be adopted to meet the end goal of fabricating optical gyroscope waveguides in one or more layers on a silicon substrate using standard silicon fabrication technologies.

Abstract: Aspects of the present disclosure are directed to process flow to fabricate a waveguide structure with a silicon nitride core having atomic-level smooth sidewalls achieved by wet etching instead of the conventional dry etching process. A mask is pre-biased to account for lateral etching during the wet-etching steps.