Abstract: The present invention relates to a multi-level class D audio power amplifier for supplying an N-level drive signal to a loudspeaker. The multi-level class D audio power amplifier further comprises a switching matrix comprising a plurality of controllable semiconductor switches where the switching matrix comprising at least (N?2) switch inputs, coupled to respective ones of (N?2) DC input voltage nodes, and at least 2*(N?2) switch outputs coupled to respective ones of 2*(N?2) intermediate nodes of a first output driver. A control circuit is configured to sequentially connect each of the (N?2) DC input voltages to a predetermined set of nodes of the 2*(N?2) intermediate nodes of the first output driver via the switching matrix in accordance with one or more of the 2*(N?1) modulated control signals of the first output driver. N is a positive integer larger than or equal to 3.

Abstract: In one embodiment, an impedance matching network includes an electronically variable reactance element (EVRE) comprising discrete reactance elements and corresponding switches. The switches are configured to switch in and out the discrete reactance elements to alter a total reactance provided by the EVRE. A monitoring circuit is operably coupled to the EVRE. For each discrete reactance element, the monitoring circuit monitors a value related to the discrete reactance element or its corresponding switch. Upon determining the monitored value exceeds a predetermined amount, the monitoring circuit the discrete reactance element of the EVRE from switching in or out.

Abstract: According to one embodiment, an amplifier circuit includes N (N>=3) transistors, two first branches and N?2 second branches. The N (N>=3) transistors are connected in parallel. The two first branches each include the transistor and a first transmission line which is connected to an output terminal of the transistor. The N?2 second branches each include the transistor and a second transmission line which is connected to the output terminal of the transistor. For each of the first branches, a sum between an electrical length of a parasitic component of the transistor and the electrical length of the first transmission line are odd multiples of approximately 90 degrees. For each of the second branches, the sum between the electrical length of the parasitic component of the transistor and the electrical length of the second transmission line are multiples of approximately 180 degrees.

Abstract: A power amplifier circuit includes an amplifier transistor having a base, a collector, a bias circuit, and a first resistance element connected between the base of the amplifier transistor and the bias circuit. The bias circuit includes a voltage generation circuit, a first transistor having a base to which a first direct-current voltage is supplied, and an emitter from which the bias current or voltage is supplied, a second transistor having a base to which a second direct-current voltage is supplied, and an emitter connected to the emitter of the first transistor, a signal supply circuit disposed between the base of the amplifier transistor and the base of the second transistor, and an impedance circuit disposed between the base of the first transistor and the base of the second transistor.

Abstract: Certain aspects of the present disclosure provide methods and apparatus for current-limiting protection of an amplifier, such as a power amplifier in a radio frequency (RF) front-end. One example current-limiting circuit generally includes a node coupled to a current source, a plurality of current-sinking devices coupled to the node, one or more switches coupled between the node and at least one of the plurality of current-sinking devices, and a bias circuit having an input coupled to the node and an output for coupling to an input of the amplifier.

Abstract: The present application provides a pre-signal amplifier, supply power conditioning apparatus, a wireless communication device and a method for providing selective pre-signal amplifier, supply power conditioning. A selective voltage supply boost stage is included, which has an input coupled to a voltage supply source for receiving a voltage supply, and an output for producing a selectively boosted voltage supply source. A voltage boost circuit is further included having a voltage boost control input coupled to a modem for controlling when the selectively boosted voltage supply source produced at the output is boosted. When the voltage boost control input identifies at least one of one or more modes in which the modem is currently operating, that a boost to the received voltage supply is desired, the resulting selectively boosted voltage supply source produced at the output is boosted.

Abstract: A Class-D amplifier having a low power dissipation mode includes first and second independent output stages that receive respective first and second level power supply voltages for driving a load coupled to the amplifier output during respective first and second operating modes. Bypass switches are controllable to disconnect the second output stage from the output during the first operating mode and to connect the second output stage to the output during the second operating mode. The operating modes are selected based on the amplifier output power level. First and second independent pre-driver stages receive the respective first and second level power supply voltages for driving the respective first and second independent output stages. During the second operating mode the first pre-driver stage is placed into a low power dissipation state and during the first operating mode the second pre-driver stage is placed into a low power dissipation state.

Abstract: A bias circuit generates a bias current to an RF power amplifier used for transmitting RF signals, and the amount of the bias current supplied to the RF power amplifier can be configured in multiple modes through transistor switches that are controlled by mode control signals, so that the bias current supplied to the RF power amplifier can be adjusted according to the required power level of the transmitting RF signals. In addition, the bias current can be turned off by another transistor switch that is controlled by a power control signal for saving power while the RF power amplifier is not transmitting RF signals.

Abstract: A biasing circuit with high current drive capability for fast settling of a biasing voltage to a stacked cascode amplifier is presented. According to a first aspect, the biasing circuit uses transistors matched with transistors of the cascode amplifier to generate a boost current during a transition phase that changes the biasing voltage by charging or discharging a capacitor. The boost current is activated during the transition phase and deactivated when a steady-state condition is reached. According to a second aspect, the biasing circuit uses an operational amplifier in a feedback loop that forces a source node of a cascode transistor of a reference circuit, that is a scaled down replica version of the cascode amplifier, to be at a reference voltage. The high gain and high current capability of the operational amplifier, provided by isolating a high frequency signal processed by the cascode amplifier from the reference circuit, allow for a quick settling of the biasing voltage.

Abstract: Apparatus and methods for bias switching of power amplifiers are provided herein. In certain configurations, a power amplifier system includes a power amplifier that provides amplification to a radio frequency (RF) signal, a power management circuit that controls a voltage level of a supply voltage of the power amplifier, and a bias control circuit that biases the power amplifier. The power management circuit is operable in multiple supply control modes, such as an average power tracking (APT) mode and an envelope tracking (ET) mode. The bias control circuit is configured to switch a bias of the power amplifier based on the supply control mode of the power management circuit.

Abstract: In an embodiment, a differential buffer may include a first input stage that compares a non-inverting portion of an input signal alternately to a non-inverting portion of an output and to an inverting portion of the output. Another embodiment of the differential buffer may also include a second input stage that compares the inverting portion of the input signal alternately to the inverting portion of the output signal and to the non-inverting portion of the output signal. Other embodiments of the differential buffer may include a feedback chopper switch that transfers the non-inverting portion of the output signal and the inverting portion of the output signal to the first input stage and to the second input stage.

Abstract: A power amplifier (PA) circuit includes a circuit for generating a supply voltage at an upper voltage rail for a power amplifier (PA). The circuit includes a DC-to-DC converter for generating a voltage from which the supply voltage is generated; a linear amplifier for sourcing or sinking current to or from the upper voltage rail via a capacitor for performing fine adjustment of the supply voltage; a first switching device coupled between an output of the linear amplifier and a lower voltage rail to selectively assist the linear amplifier sink current through the capacitor to deal with actual or anticipated transient response of the supply voltage; and a second switching device coupled between the upper voltage rail and the lower voltage rail to selectively discharge the capacitor in response to actual or anticipated transient response of the supply voltage.

Abstract: An impedance control unit is disclosed. Also disclosed are a balun unit, an electronic device, and a Doherty amplifier, each comprising the impedance control unit. The impedance control unit comprises a pair of re-entrant type coupled lines, and further comprises an electrical short between the intermediate plane and the ground plane arranged locally inside the pair of coupled lines.

Abstract: An amplifier circuit for compensating an output signal provided at an output of the amplifier circuit comprises a cascade of sub-amplifiers. Each sub-amplifier of the cascade contributes to a respective part of the output signal. The cascade of sub-amplifiers comprises an end sub-amplifier and at least one preliminary sub-amplifier. At least one error correction block is coupled to apply feedforward error correction to an output of one of the at least one preliminary sub-amplifier.

Abstract: An amplification device includes an amplification circuit and a protection circuit. The amplification circuit includes a transistor having a first terminal for outputting an amplified radio frequency signal, a second terminal, and a control terminal coupled to the input terminal of the amplification circuit for receiving a radio frequency signal to be amplified. The protection circuit has a first terminal coupled to the output terminal or the input terminal of the amplification circuit, and a second terminal. The protection circuit includes a switch and a first voltage clamping unit. The switch unit is turned on or turned off according to a control signal. The first voltage clamping unit is coupled to the switch unit for clamping a voltage at the first terminal of the protection circuit within a predetermined region when the switch unit is turned on.

Abstract: A digital power amplifier comprising two or more individually activatable amplifiers. The outputs of the amplifiers are connected causing an activated amplifier of the two or more amplifiers to load modulate another activated amplifier of the two or more amplifiers.

Abstract: A distributed envelope tracking (ET) amplifier circuit and related apparatus are provided. The distributed ET amplifier apparatus includes an amplifier circuit configured to amplify a radio frequency (RF) signal based on a modulated voltage. In examples discussed herein, the amplifier circuit is co-located with an ET voltage circuit configured to supply the modulated voltage such that a trace inductance between the amplifier circuit and the ET voltage circuit can be reduced to below a defined threshold. By co-locating the amplifier circuit with the ET voltage circuit to reduce a coupling distance between the amplifier circuit and the ET voltage circuit and thus the trace inductance associated with the coupling distance, it may be possible to reduce degradation in the modulated voltage. As a result, it may be possible to improve efficiency and maintain linearity in the amplifier circuit, particularly when the RF signal is modulated at a higher modulation bandwidth.

Abstract: High-frequency amplifier circuitry has a common-source first transistor to amplify a high-frequency input signal, a common-gate second transistor to amplify a signal amplified by the first transistor to generate an output signal, a first inductor connected between a source of the first transistor and a first reference potential node, a second inductor connected between a drain of the second transistor and a second reference potential, a first switch to select whether to connect a first attenuator on an input signal path, a second switch to select whether to connect a first resistor between the input signal path and the first reference potential node, a third switch to select at least one of second resistors connected in parallel to the second inductor, and a fourth switch to select at least one of first capacitors connected in parallel on an output signal path connected to the drain of the second transistor.

Abstract: A method for increasing efficiency of a radio frequency (RF) amplifier employing laterally diffused metal oxide semiconductor (LDMOS) transistors coupled to an RF exciter including determining an emission mode of modulated RF input signals generated by the exciter, if the emission mode is of a type where the modulated RF input signals have a continuously varying envelope, biasing the LDMOS transistors in the RF amplifier for linear operation, and if the emission mode is of a type where the modulated RF input signals do not have a continuously varying envelope, biasing the LDMOS transistors in the RF amplifier with a fixed quiescent drain current and a fixed drain supply voltage for the LDMOS transistors selected to cause the LDMOS transistors to operate in compression.

Abstract: A power amplification circuit includes an amplification transistor, a variable voltage power supply that supplies a variable voltage to a collector of the amplification transistor, a bias circuit that has a constant current amplification transistor outputting a DC bias current to a base of the amplifier transistor, and a current limiting circuit that limits the DC bias current. The current limiting circuit includes a current limiting transistor, a resistor element connected to a collector of the current limiting transistor and the variable voltage power supply, and a resistor element connected to a base of the current limiting transistor and a base of the constant current amplifying transistor.