Abstract: A laser medium unit includes: a plate-shaped laser gain medium which includes a first surface and a second surface opposite to the first surface and generates emission light by the irradiation of excitation light from the first surface; a reflection member that is provided on the second surface so as to reflect the excitation light and the emission light; and a cooling member that cools the laser gain medium. The laser gain medium includes an irradiation area which is irradiated with the excitation light and an outer area which is located outside the irradiation area when viewed from a thickness direction intersecting the first surface and the second surface. The cooling member is thermally connected to the second surface through the reflection member so that a cooling area of the laser gain medium is formed on the second surface.

Abstract: Systems and methods are provided for optimizing the energy output of a laser system, such as a Light Detection and Ranging (LIDAR) system, by allowing the laser system to be tuned while the laser is in operation. For example, in an embodiment, a sensor, such as a photoresistor, is used to perform a scan to determine whether turning the crystal will result in increased energy. Crystal turners, such as servo motors, can be used to turn the crystal until the energy stops increasing.

Abstract: Provided is an external cavity laser (ECL) including a vertical cavity surface emitting laser (VCSEL)-Distributed Bragg Reflector (DBR) type light emitting unit configured to receive a current and emit light, and including a DBR function layer and an active layer for a quantum well formed on one side of this DBR function layer, and an optical circuit unit including a light guide in which one end surface is installed to face an active layer at one side of the active layer, light generated from the active layer is received and guided, and an optical axis is formed vertically to an active layer plane, a reflection pattern that is formed at one side of the light guide so as to receive light output from the other end of the light guide to reflect the light again to the light guide, and an external layer for surrounding the light guide and the reflection pattern, wherein the VCSEL-DBR type light emitting unit and the optical circuit unit are mutually coupled to each other.

Abstract: Apparatus, systems and methods to spectrally beam combine a group of diode lasers in an external cavity arrangement. A dichroic beam combiner or volume Bragg grating beam combiner is placed in an external cavity to force each of the diode lasers or groups of diode lasers to oscillate at a wavelength determined by the passband of the beam combiner. In embodiments the combination of a large number of laser diodes in a sufficiently narrow bandwidth to produce a high brightness laser source that has many applications including as to pump a Raman laser or Raman amplifier.

Abstract: A light emitting device includes: a first n-type semiconductor layer disposed on a substrate; a tunnel junction layer disposed on a part of the first n-type semiconductor layer; a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer; an active layer disposed on the p-type semiconductor layer; and a second n-type semiconductor layer disposed on the active layer.

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.

Abstract: A semiconductor laser and a method for producing such a semiconductor laser are disclosed. In an embodiment a semiconductor laser has at least one surface-emitting semiconductor laser chip including a semiconductor layer sequence having at least one active zone configured to generate laser radiation and a light exit surface oriented perpendicular to a growth direction of the semiconductor layer sequence. The laser further includes a diffractive optical element configured to expand and distribute the laser radiation, wherein an optically active structure of the diffractive optical element is made of a material having a refractive index of at least 1.65 regarding a wavelength of maximum intensity of the laser radiation; and a connector engaging at least in places into the optically active structure and completely filling the optically active structure at least in places.

Abstract: There is disclosed a DBR laser and a method of use. The DBR laser comprises a phase section in a cavity of the DBR laser and configured to adjust an optical path length of the cavity. A DBR section comprises a frequency tuning system configured to adjust a Bragg frequency of the DBR section. A detector is configured to detect laser light transmitted through the DBR section.

Abstract: A semiconductor laser (2) includes an n-type semiconductor substrate (1), a stack of an n-type cladding layer (4), an active layer (5), and a p-type cladding layer (6) successively stacked on the n-type semiconductor substrate (1). An optical waveguide (3) includes a non-impurity-doped core layer (9) provided on a light output side of the semiconductor laser (2) on the n-type semiconductor substrate (1) and having a larger forbidden band width than the active layer (5), and a cladding layer (10) provided on the core layer (9) and having a lower carrier concentration than the p-type cladding layer (6). The semiconductor laser (2) includes a carrier injection region (X1), and a non-carrier-injection region (X2) provided between the carrier injection region (X1) and the optical waveguide (3).

Abstract: Some embodiments may include a fiber laser, comprising: a variably wound optical fiber, wherein the variably wound optical fiber includes: a first length arranged in a plurality of first loops with a first separation distance between successive ones of the first loops; and a second length arranged in a plurality of second loops with a second separation distance between successive ones of the second loops; wherein the first separation distance between successive ones of the first loops is greater than the second separation distance between successive ones of the second loops; and packaging to remove heat generated by the optical fiber of the fiber laser during operation of the fiber laser, wherein the variably wound optical fiber is fixably mounted to a surface of a heat conductor of the packaging.

Abstract: A laser amplifier module having an enclosure includes an input window, a mirror optically coupled to the input window and disposed in a first plane, and a first amplifier head disposed along an optical amplification path adjacent a first end of the enclosure. The laser amplifier module also includes a second amplifier head disposed along the optical amplification path adjacent a second end of the enclosure and a cavity mirror disposed along the optical amplification path.

Abstract: Provided is a metamaterial-based reflector including a first metamaterial layer including an array of first nanostructures, and a second metamaterial layer provided on the first metamaterial layer, the second metamaterial layer including an array of second nanostructures, wherein an arrangement of the second nanostructures is different from an arrangement the first nanostructures.

Abstract: A light emitting device includes a base defining a recess, a lid portion, first and second semiconductor laser elements, and a collimate lens. The lid portion covers the recess so that a hermetically sealed space is defined by the lid portion and the base, the lid portion having a bottom surface fixed to the base and a top surface opposite to the bottom surface. The first and second semiconductor laser elements are provided in the hermetically sealed space. The first and second semiconductor laser elements respectively irradiate first and second lights having first and second peak wavelengths in a visible range. The collimate lens is fixed on the top surface of the lid portion with an adhesive. The collimate lens has a plurality of lens portions including a first lens portion through which the first light passes, and a second lens portion through which the second light passes.

Abstract: A driver circuit includes: a variable power supply configured to apply a power supply voltage to a light emitting device and to vary a voltage value of the power supply voltage; a current-control switching device electrically connected to the light emitting device and configured to control a current flowing in the light emitting device; a detection part configured to detect a current value and a voltage value related to the current flowing in the light emitting device; and a control part configured to determine a minimum voltage of the power supply voltage based on a detection result of the detection part.

Abstract: Methods and apparatus for measuring objects comprise a plurality of light sources to generate a plurality of light beams directed toward a spot generator array comprising a plurality of spot generating lenses. The plurality of light sources is separated from the spot generator array with a separation distance sufficient to overlap the plurality of light beams at each of the spot generating lenses. The overlap of each of the beams at each of the spot generating lenses provides smoothing of the energy profile of the light energy incident on the spot generating lenses. The spot generator array generates focused spots comprising overlapping focused beams. The overlapping beams may comprise overlapping beams of a vertical cavity surface emitting laser (VCSEL) array, and the overlapping focused beams can decrease optical artifacts.

Abstract: A driving circuit includes a first transistor that includes a first terminal, a second terminal, and a third terminal; a second transistor having a fourth terminal, a fifth terminal, and a sixth terminal; and an output portion that outputs a signal between the second transistor and a second current source to a light emitting element, wherein the first terminal is coupled to a first power source, a signal is input to the second terminal, and the third terminal is grounded through a first current source which is different from the second current source, and the fourth terminal is coupled to a second power source which is the same as or different from the first power source via the second current source, the fifth terminal is coupled to a voltage source or a bias circuit, and the sixth terminal is coupled between the first transistor and the first current source.

Abstract: The invention relates to a MOPA laser system having at least one laser oscillator (MO), which generates laser radiation at an emission wavelength (?0), and having an optical amplifier (PA) downstream the laser oscillator (MO) in the propagation direction of the laser radiation, which optical amplifier amplifies the laser radiation and thereby spectrally broadens it to a useful bandwidth (??). It is an object of the invention to provide an improved MOPA laser system which is designed for a high power of the amplified laser radiation and which is insensitive to back-reflection. Unavoidable back-reflections should neither affect the output power of the optical amplifier (PA), nor lead to the destruction of the laser oscillator (MO) or other components of the system.

Abstract: Methods, systems, and apparatus, including a laser including a layer having first and second regions, the first region including a void; a mirror section provided on the layer, the mirror section including a waveguide core, at least part of the waveguide core is provided over at least a portion of the void; a first grating provided on the waveguide core; a first cladding layer provided between the layer and the waveguide core and supported by the second region of the layer; a second cladding layer provided on the waveguide core; and a heat source configured to change a temperature of at least one of the waveguide core and the grating, where an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core.

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). A p-contact surface (61) is electrically connected to the p-contact (41), and an n-contact surface (63) is electrically connected to the n-contact (43) such that the p-contact surface (61) and the n-contact surface (63) are configured for external electrical and mechanical connection of the semiconductor laser (1).

Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.