Abstract: Disclosed is a laser system that includes a femtosecond oscillator, a regenerative amplifier for chirped pulse amplification of femtosecond laser pulses, and a compressor. The regenerative amplifier includes a plurality of positive Group Delay Dispersion (GDD) mirrors disposed within a cavity of the regenerative amplifier. The compressor receives amplified laser pulses from the regenerative amplifier.

Abstract: Provided is a back side emitting light source array device and an electronic apparatus, the back side emitting light source array device includes a substrate, a distributed Bragg reflector (DBR) provided on a first surface of the substrate, a plurality of gain layers which are provided on the DBR, the plurality of gain layers being spaced apart from one another, and each of the plurality of gain layers being configured to individually generate light, and a nanostructure reflector provided on the plurality of gain layers opposite to the DBR, and including a plurality of nanostructures having a sub-wavelength shape dimension, wherein a reflectivity of the DBR is less than a reflectivity of the nanostructure reflector such that the light generated is emitted through the substrate.

Abstract: Disclosed is a terahertz laser device based on phonon vibration excitation, including a resonant cavity composed of a hollow waveguide made of a composite film and optical lenses at both ends of the waveguide, where M represents nano-metal particles. A zinc oxide mesomorphic microsphere is used herein as a source, symmetric stretching vibration of nanosheets on the zinc oxide microsphere is excited and induced by a laser and is transmitted through elastic and electric coupling among the nanosheets, and a terahertz wave with a frequency of 0.

Abstract: In a semiconductor laser device, a semiconductor layer includes a first groove formed on both sides of a ridge, a pair of second recesses facing each other and between which the ridge is interposed on a side of a light emitting surface, and a pair of third grooves in parallel to the first groove from the light emitting surface and interposing the ridge therebetween.

Abstract: A light source apparatus includes an airtight container having a hemispherical or semielliptical first curved portion configured to receive laser light, a hemispherical or semielliptical second curved portion opposite to the first curved portion, and a cylindrical portion connecting the first curved portion and the second curved portion; assist gas sealed in the airtight container; and a light source configured to irradiate laser light to the first curved portion from outside of the airtight container.

Abstract: A system for pumping laser sustained plasma is disclosed. The system includes a plurality of pump modules configured to generate respective pulses of pump illumination for the laser sustained plasma, wherein at least one pump module is configured to generate a train of pump pulses that is interlaced in time with another train of pump pulses generated by at least one other pump module of the plurality of pump modules. The system further includes a plurality of non-collinear illumination paths configured to direct the respective pulses of pump illumination from the plurality of pump modules into a collection volume of the laser sustained plasma.

Abstract: A semiconductor laser wafer includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a composition evaluation layer. The active layer is provided on the first semiconductor layer; multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region are stacked in the active layer; the light-emitting multi-quantum well region is made of a first compound semiconductor and a second compound semiconductor. The second semiconductor layer is provided on the active layer. The composition evaluation layer is provided above the active layer and includes a first film and a second film; the first film is made of the first compound semiconductor and has a first thickness; and the second film is made of the second compound semiconductor and has a second thickness.

Abstract: Provided is an optical interference light source device of a current-temperature controlled semiconductor laser, including a heat dissipation plate, a ring-shaped semiconductor refrigerating sheet, a semiconductor laser, a PCB board, a thermal sensor and a fixed plate. The first circular window copper area of the PCB is in contact with the second circular copper area through a via. A lower end of a housing of the semiconductor laser is connected to the first circular windowed copper area through a thermally conductive silicone grease. The ring-shaped semiconductor refrigerating sheet is connected to the first circular window copper area through a thermally conductive silicone grease connected to the heat dissipation plate. The thermal sensor is configured to detect a temperature of the first circular windowed copper area. The present disclosure has beneficial effects of simple structures, good thermal conductivities, high temperature control precisions, and stable output wavelengths of the laser.

Abstract: A light modulation element according to example embodiments includes a substrate; a first lower DBR layer on the substrate including a first material layer alternately stacked with a second material layer having a different refractive index from the first material layer; a second lower DBR layer on the first lower DBR layer with a surface area less than the first lower DBR layer and including a third material layer alternately stacked with a fourth material layer having a different refractive index from the third material layer; an active layer on the second lower DBR layer, including a semiconductor material having a multi-quantum well structure and having a refractive index that varies according to an applied voltage; and an upper DBR layer on the active layer including a fifth material layer alternately stacked with a sixth material layer having a different refractive index from the fifth material layer.

Abstract: An optic produces a beam of ultraviolet laser radiation from a beam of visible laser radiation and spatially separates the ultraviolet laser beam from the visible laser beam. The optic includes two crystals made of the same optically-nonlinear material that are contact bonded along a planar interface. One crystal has principle crystal axes that are oriented for type-I second-harmonic generation. The ultraviolet laser beam exits the optic through an uncoated surface of the other crystal. The principle crystal axes of the two crystals have different orientations and have reflection symmetry about the planar interface.

Abstract: A method and system for using a wavelength tunable semiconductor laser as an excitation source of a fiber optics sensing system (FOSS) based on a thermoelectric control of a laser sweep. A device can include an optical fiber; a set of fiber Bragg gratings disposed within the optical fiber; a single-frequency laser (SFL) operatively connected to the optical fiber; a thermoelectric cooler operatively connected to the SFL; a controller comprising a processor in communication with the thermoelectric cooler; and a nontransitory, computer-readable storage medium in communication with the processor. The nontransitory, computer-readable storage medium can store instructions that, when executed by the processor, cause the processor to perform operations including determining a strain value at a first fiber Bragg grating of the set of fiber Bragg gratings based on a second laser signal received at the device that is reflected from an interaction of a first laser signal with the first fiber Bragg grating.

Abstract: The present disclosure relates to a laser system. The laser system may have at least non-flat gain media disc. At least one pump source may be configured to generate a beam that pumps the non-flat gain media disc. A laser cavity may be formed by the pump source and the non-flat gain media disc. An output coupler may be included for receiving and directing the output beam toward an external component.

Abstract: Apparatuses and methods are disclosed for applying laser energy having desired pulse characteristics, including a sufficiently short duration and/or a sufficiently high energy for the photomechanical treatment of skin pigmentations and pigmented lesions, both naturally-occurring (e.g., birthmarks), as well as artificial (e.g., tattoos). The laser energy may be generated with an apparatus having a resonator with the capability of switching between a modelocked pulse operating mode and an amplification operating mode. The operating modes are carried out through the application of a time-dependent bias voltage, having waveforms as described herein, to an electro-optical device positioned along the optical axis of the resonator.

Abstract: A semiconductor vertical light source includes upper and lower mirrors with an active region in between, an inner mode confinement region, and an outer current blocking region that includes a common epitaxial layer including an epitaxially regrown interface between the active region and upper mirror. A conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer. The first and second impurity doped region force current flow into the conducting channel during normal operation of the light source.

Abstract: This invention aims at providing a nitride semiconductor causing no element breakdown even in driving under a high current density. A nitride semiconductor element is provided with a nitride semiconductor active layer made of AlxGa(1-x)N and a composition change layer made above the nitride semiconductor active layer and made of Alx3Ga(1-x3)N in which an Al composition ratio x3 decreases in a direction away from the nitride semiconductor active layer.

Abstract: This invention opens up the chip thickness for increasing VCSEL power. It describes a method by using multiple gain layers 10, separated by insulating layers 11, powered in parallel electrically through embedded electrodes 13, 14 connected through via holes. The gain layers, as a whole, are bounded on top and bottom by DBR mirrors 12. The structure, compared to a standard VCSEL, leads to higher power, lower resistive loss, higher device speed, higher beam quality, and fewer number of DBR layers.

Abstract: The present invention discloses an integrated broadband chaotic semiconductor laser using optical microcavities. The arc-shaped hexagonal laser outputs light. Part of the light is totally reflected through the deformed microcavity and then reflected out of the deformed microcavity from the passive waveguide II; after entering the passive feedback waveguide, another part of the light is fed back into the deformed microcavity by the high reflection film, passes through an in-cavity ray track and then is also reflected out of the deformed microcavity from the passive waveguide II; the two-path light is coupled into the arc-shaped hexagonal laser, and finally generated chaotic laser light is directionally coupled and output through the passive waveguide I at the other end of the arc-shaped hexagonal laser. The present invention has wide broadband, flat spectrum, compact structure, and no time delay signature.

Abstract: A method of fabricating an optoelectronic component within a silicon-on-insulator substrate, the method comprising: providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising a silicon base layer, a buried oxide (BOX) layer on top of the base layer, and a silicon device layer on top of the BOX layer; etching a first cavity region into the SOI substrate and etching a second cavity region into the SOI substrate, the first cavity region having a first depth and the second cavity region having a second depth, the second depth being greater than the first depth; depositing a multistack epi layer into the first and the second cavity regions simultaneously, the multistack epi layer comprising a first multistack portion comprising a first active region and a second multistack portion comprising a second active region.

Abstract: The present disclosure discloses a sector-shaped closely-packed laser generator, comprising a module packaging unit and a closely-packed output unit; the module packaging unit is provided therein with a plurality of single-die modules, and each of the single-die modules has a coupling optical fiber; the closely-packed output unit is provided therein with a silicon wafer whose surface has a plurality of V-shaped grooves, and the plurality of V-shaped grooves are arranged into a sector shape; and the coupling optical fibers of the single-die modules protrude from the module packaging unit and enter the closely-packed output unit, and are arranged in the V-shaped grooves after coating layers being stripped, to emit laser lights in directions of the arrangement of the V-shaped grooves.

Abstract: A laser assembly (1210) for generating an assembly output beam (1212) includes a laser subassembly (1216) that emits a plurality of spaced apart first laser beams (1220A), a plurality of spaced apart second laser beams (1220B), a transform lens assembly (1244), a wavelength selective beam combiner (1246), and a path length adjuster (1299). The transform lens assembly (1244) collimates and directs the laser beams (1220A) (1220B) to spatially overlap at a focal plane of the transform lens assembly (1244). The path length adjuster (1299) is positioned in a path of the first laser beams (1220A), the path length adjuster (1299) being adjustable to adjust of a path length the first laser beams (1220A) relative to the second laser beams (1220B).