Abstract: An optical module includes a housing and an optical element that is disposed in the housing and emits light in the housing, in which a partial area of a surface inside the housing serves as a reduced optical reflection area processed so as to absorb the light and have a rough surface.

Abstract: A semiconductor vertical light source includes upper and lower mirrors with an active region in between, an inner mode confinement region, and an outer current blocking region that includes a common epitaxial layer including an epitaxially regrown interface between the active region and upper mirror. A conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer. The first and second impurity doped region force current flow into the conducting channel during normal operation of the light source.

Abstract: The invention provides a continuous-wave pumped polymer laser and preparation method thereof, comprising: coating an organic polymer solution onto a substrate to form an polymer film, and applying a template having a distributed feedback structure to the polymer film, or coating an organic polymer solution onto a substrate having a distributed feedback structure to form an polymer film, and applying a plate to the polymer film; heating the substrate to reach above the phase transition temperature of the organic polymer, and applying a pressure to the template or plate for 1-100 min; and cooling the substrate to reach below the phase transition temperature of the organic polymer, and removing the template or plate from the organic polymer. The method of the invention is simple, the organic polymer molecular chain and supramolecular structure are oriented to have long range order, and the obtained laser can use continuous-wave pumping.

Abstract: A solid-state laser system includes: a first solid-state laser device configured to output a first pulse laser beam; a second solid-state laser device configured to output a second pulse laser beam; a first non-linear crystal disposed on a first optical path and configured to convert the first and second pulse laser beams into a third pulse laser beam and output the third pulse laser beam; and a second non-linear crystal disposed on a second optical path and configured to convert the second and third pulse laser beams into a fourth pulse laser beam and output the fourth pulse laser beam. The second pulse laser beam is incident on the second non-linear crystal at a first timing before the first non-linear crystal. Residual light of the second pulse laser beam is incident on the first non-linear crystal at a second timing later than the first timing.

Abstract: A semiconductor vertical resonant cavity light source includes an upper and lower mirror that define a vertical resonant cavity. An active region is within the cavity for light generation between the upper and lower mirror. At least one cavity spacer region is between the active region and the upper mirror or lower mirror. The cavity includes an inner mode confinement region and an outer current blocking region. An index guide in the inner mode confinement region is between the cavity spacer region and the upper or lower mirror. The index guide and outer current blocking region each include a lower and upper epitaxial material layer thereon with an epitaxial interface region in between. At least a top surface of the lower material layer includes aluminum in the interface region throughout a full area of an active part of the vertical light source.

Abstract: A laser source for emitting a group of pulses, includes a primary laser source suitable for emitting at least one primary laser pulse; at least one interferometer suitable for forming, from the primary laser pulse, a plurality of secondary laser pulses, each interferometer comprising at least one delay line allowing two secondary laser pulses to be temporally separated, by a delay comprised between 50 ps and 10 ns; and a single-mode amplifying optical fiber intended to receive the secondary laser pulses, in order to form as output a group of spatially superposed pulses.

Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

Abstract: A passively Q-switched solid-state laser includes a resonator (1) with an active laser material (2) and a decoupling end mirror (6) for decoupling laser pulses that have a pulse duration of less than 1 ns from the resonator (1), an optical fiber (13), into which the laser pulses decoupled from the decoupling end mirror (6) are injected, and a chirped volume Bragg grating (17), at which the laser pulses are reflected after they have passed through the optical fiber (13) for shortening the pulse duration. The pulse duration after the reflection on the chirped volume Bragg grating (17) is less than 30 ps. The active laser material (2) is Nd:YAG and a saturable absorber (3) that is formed from Cr:YAG and has a transmission in the unsaturated state of less than 50% is also arranged in the resonator. The length (a) of the resonator (1) is from 1 mm to 10 mm and the laser pulses decoupled at the decoupling end mirror (6) have a pulse energy from 1 ?J to 200 ?J.

Abstract: A laser medium unit includes: a plate-shaped laser gain medium which includes a first surface and a second surface opposite to the first surface and generates emission light by the irradiation of excitation light from the first surface; a reflection member that is provided on the second surface so as to reflect the excitation light and the emission light; and a cooling member that cools the laser gain medium. The laser gain medium includes an irradiation area which is irradiated with the excitation light and an outer area which is located outside the irradiation area when viewed from a thickness direction intersecting the first surface and the second surface. The cooling member is thermally connected to the second surface through the reflection member so that a cooling area of the laser gain medium is formed on the second surface.

Abstract: A semiconductor device includes a substrate, a semiconductor laser part formed on the substrate and having an active layer with an uniform composition and a first ridge structure, and an adjacent part formed on the substrate, having a core layer with an uniform composition and a second ridge structure, and being an optical modulator or an optical waveguide which is in contact with the semiconductor laser part, wherein the first ridge structure is largest in width at a first contact part which is in contact with the second ridge structure, and the second ridge structure is largest in width at a second contact part which is in contact with the first ridge structure.

Abstract: A tunable laser has a first mirror, a second mirror, a gain medium, and a directional coupler. The first mirror and the second mirror form an optical resonator. The gain medium and the directional coupler are, at least partially, in an optical path of the optical resonator. The first mirror and the second mirror comprise binary super gratings. Both the first mirror and the second mirror have high reflectivity. The directional coupler provides an output coupler for the tunable laser.

Abstract: A resonator is provided having a waveguide with a first boundary, a second boundary parallel to the first boundary, a first end, a second end, and a waveguide cavity at least partly between the first boundary and the second boundary. A first grating, having a period of distance a, is at the first boundary of the waveguide, and a second grating, having a period of distance a, is at the second boundary of the waveguide. The first and second boundaries are separated by a constant distance d. The first boundary may have a periodic profile aligned with a periodic profile of the second boundary. The periodic profile of the first boundary and the second boundary may be a sinusoidal profile, a square profile, or profile of another shape. The resonator may be suitable for use in a distributed feedback laser.

Abstract: The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxide VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof.

Abstract: A pulse laser apparatus (100) for creating laser pulses (1), in particular soliton laser pulses (1), based on Kerr lens mode locking of a circulating light field in an oscillator cavity (10), comprises at least two resonator mirrors (11, 12, . . .

Abstract: A light source package includes a substrate, a light emitting device disposed on the substrate, a lens disposed on the light emitting device, a housing disposed on the substrate, and a conductive member disposed in the housing. The lens is spaced apart from the light emitting device, the housing is disposed on a side surface and a portion of a top surface of the lens, and the conductive member is electrically connected to the light emitting device.

Abstract: A light emitting apparatus including a plurality of first light emitters and a plurality of second light emitters that differ from the first light emitters in terms of resonance wavelength, in which the second light emitters are each disposed between each adjacent pair of the first light emitters, first light that resonates in the plurality of first light emitters is in phase, and second light that resonates in the plurality of second light emitters is in phase.

Abstract: A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.

Abstract: A narrow linewidth external cavity semiconductor laser comprises semiconductor optical amplifier chip, comb-shaped optical filter, bandpass optical filter, partial reflection sheet, and collimated light beam coupling output assembly Collimated light beam coupling output assembly is composed of isolator, coupling lens, and output optical fiber. Laser resonant cavity is formed by partial reflection sheet and rear end face of semiconductor optical amplifier chip. Comb-shaped optical filter and bandpass optical filter form single-channel narrowband optical filtering assembly. Bandwidth enables laser to perform single-mode lasing and effectively restrain any other mode lasing. Longitudinal mode's relative position over whole filtering band may be controlled by adjusting laser temperature. Output wavelength and laser power are controlled and in best working state. Etalon is used as comb-shaped optical filter to easily realize narrow linewidth output.

Abstract: A circuit includes a capacitance coupled between a high voltage node and ground, a laser diode having an anode coupled to the high voltage node and a cathode coupled to an output node, and a current source coupled between the output node and ground. The current source turns on based on assertion of a trigger signal and sinks current from the capacitance to ground to thereby cause the laser diode to lase, and turns off based on deassertion of the trigger signal. A clamping circuit is coupled between the output node and the high voltage node, and clamps voltage at the output node occurring when the current source switches off.

Abstract: A limited range source of electromagnetic radiation and a radiation method, includes a tunable source of electromagnetic radiation; and a control element configured to tune the wavelength of the source of electromagnetic radiation to a desired wavelength corresponding to an absorption line of an atom or a molecule or other species present in the medium through which the electromagnetic radiation is to propagate; wherein the control element is configured to receive data relating to the desired wavelength.