Abstract: The present invention discloses an integrated broadband chaotic semiconductor laser using optical microcavities. The arc-shaped hexagonal laser outputs light. Part of the light is totally reflected through the deformed microcavity and then reflected out of the deformed microcavity from the passive waveguide II; after entering the passive feedback waveguide, another part of the light is fed back into the deformed microcavity by the high reflection film, passes through an in-cavity ray track and then is also reflected out of the deformed microcavity from the passive waveguide II; the two-path light is coupled into the arc-shaped hexagonal laser, and finally generated chaotic laser light is directionally coupled and output through the passive waveguide I at the other end of the arc-shaped hexagonal laser. The present invention has wide broadband, flat spectrum, compact structure, and no time delay signature.

Abstract: A method of fabricating an optoelectronic component within a silicon-on-insulator substrate, the method comprising: providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising a silicon base layer, a buried oxide (BOX) layer on top of the base layer, and a silicon device layer on top of the BOX layer; etching a first cavity region into the SOI substrate and etching a second cavity region into the SOI substrate, the first cavity region having a first depth and the second cavity region having a second depth, the second depth being greater than the first depth; depositing a multistack epi layer into the first and the second cavity regions simultaneously, the multistack epi layer comprising a first multistack portion comprising a first active region and a second multistack portion comprising a second active region.

Abstract: The present disclosure discloses a sector-shaped closely-packed laser generator, comprising a module packaging unit and a closely-packed output unit; the module packaging unit is provided therein with a plurality of single-die modules, and each of the single-die modules has a coupling optical fiber; the closely-packed output unit is provided therein with a silicon wafer whose surface has a plurality of V-shaped grooves, and the plurality of V-shaped grooves are arranged into a sector shape; and the coupling optical fibers of the single-die modules protrude from the module packaging unit and enter the closely-packed output unit, and are arranged in the V-shaped grooves after coating layers being stripped, to emit laser lights in directions of the arrangement of the V-shaped grooves.

Abstract: A laser assembly (1210) for generating an assembly output beam (1212) includes a laser subassembly (1216) that emits a plurality of spaced apart first laser beams (1220A), a plurality of spaced apart second laser beams (1220B), a transform lens assembly (1244), a wavelength selective beam combiner (1246), and a path length adjuster (1299). The transform lens assembly (1244) collimates and directs the laser beams (1220A) (1220B) to spatially overlap at a focal plane of the transform lens assembly (1244). The path length adjuster (1299) is positioned in a path of the first laser beams (1220A), the path length adjuster (1299) being adjustable to adjust of a path length the first laser beams (1220A) relative to the second laser beams (1220B).

Abstract: A semiconductor radiation source includes at least one semiconductor chip that generates radiation; a controller with one or more switching elements configured for pulsed operation of the semiconductor chip; and at least one capacitor body, wherein the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the controller electrically connects to a side of the semiconductor chip opposite the capacitor body, and the controller, the capacitor body and the semiconductor chip are stacked on top of each other so that the capacitor body is located between the control unit and the semiconductor chip.

Abstract: A semiconductor light emitting element includes: a GaN substrate; a first semiconductor layer located above the GaN substrate and including a nitride semiconductor of a first conductivity type; an active layer located above the first semiconductor layer and including a nitride semiconductor including Ga or In; an electron barrier layer located above the active layer and including a nitride semiconductor including Al; and a second semiconductor layer located above the electron barrier layer and including a nitride semiconductor of a second conductivity type. The electron barrier layer includes: a first region having an Al composition ratio changing at a first change rate; and a second region having an Al composition ratio changing at a second change rate larger than the first change rate. In the first second regions, the Al composition ratio monotonically increases at the first change rate in the direction from the active layer toward second semiconductor layer.

Abstract: An addressable vertical cavity surface emitting laser (VCSEL) array may generate structured light in dot patterns. The VCSEL array includes a plurality of traces that control different groups of VCSELs, such that each group of VCSELs may be individually controlled. The VCSEL groups are arranged such that they emit a dot pattern, and by modulating which groups of VCSELs are active a density of the dot pattern may be adjusted. The VCSEL array may be part of a depth projector that projects the dot pattern into a local area. A projection assembly may replicate the dot pattern in multiple tiles.

Abstract: A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes Alx1Ga1-x1N with 0?x1?1 or Alx1Iny1Ga1-x1-y1N with 0?x1?1, 0?y1<1 and x1+y1?1, the aluminum content x1 decreases in a direction pointing away from the active layer so that the aluminum content has a maximum value x1max and a minimum value x1min<x1max, and the second partial layer includes Alx2Ga1-x2N with 0?x2?x1min or Alx2Iny2Ga1-x2-y2N with 0?x2?x1min, 0?y2<1 and x2+y2?1.

Abstract: To cool a capacitor including a first electrode and a second electrode, a capacitor cooling structure includes: a conducting part electrically connected with the first electrode; an insulating part that has a first surface including a first position and a second surface including a second position, and is connected with the conducting part at the first position; a first fastening part configured to fasten the conducting part and the insulating part to each other; and a cooling part connected with the second position facing the first position, the conducting part and the cooling part being electrically insulated from each other by the insulating part.

Abstract: An edge emitting semiconductor laser and a method for operating an edge emitting semiconductor laser are disclosed.

Abstract: A light emitting device includes a plurality of semiconductor laser elements, a light-transmissive member, and a wavelength conversion member. Each of the semiconductor laser elements is configured to emit light having a first wavelength. The light-transmissive member includes a plurality of first inclined surfaces and a lower surface. The light-transmissive member is positioned with respect to the semiconductor laser elements so that beams of the light emitted from the semiconductor laser elements enter the light-transmissive member respectively through the first inclined surfaces and exit from the lower surface. The wavelength conversion member is disposed in contact with the lower surface of the light-transmissive member and configured to convert at least a portion of the light exiting from the lower surface to wavelength-converted light having a second wavelength.

Abstract: A semiconductor laser source including a Mach-Zehnder interferometer, this interferometer including first and second arms. Each of the arms is divided into a plurality of consecutive sections, the effective index of each section located immediately after a preceding section being different from the effective index of this preceding section. The lengths of the various sections meet the following condition: ? n = 1 N 2 ? L 2 , n ? neff 2 , n - ? n = 1 N 1 ? L 1 , n ? neff 1 , n = k f ? ? Si where: kf is a preset integer number higher than or equal to 1, N1 and N2 are the numbers of sections in the first and second arms, respectively, L1,n and L2,n are the lengths of the nth sections of the first and second arms, respectively, neff1,n and neff2,n are the effective indices of the nth sections of the first and second arms, respectively. The first and second arms each comprise a gain-generating section.

Abstract: An X-ray laser has a target anode of a crystalline material that emits X-ray radiation in response to excitation and that is located on a thermally conductive substrate. An X-ray source provides an input X-ray beam that illuminates a predetermined volume of the target anode at a predefined angle relative to a surface of the anode so as to induce a Borrmann mode standing wave in the predetermined volume. An electron source outputs an electron beam that is incident on the Borrmann mode region so as to cause electron impact ionization of the crystalline material and thereby induce stimulated emission of a coherent output X-ray beam.

Abstract: Examples of compact control electronics for precision frequency combs are disclosed. Application of digital control architecture in conjunction with compact and configurable analog electronics provides precision control of phase locked loops with reduced or minimal latency, low residual phase noise, and/or high stability and accuracy, in a small form factor.

Abstract: Methods for designing a mode-selective optical device including one or more optical interfaces defining an optical cavity include: defining a loss function within a simulation space encompassing the optical device, the loss function corresponding to an electromagnetic field having an operative wavelength within the optical device resulting from an interaction between an input electromagnetic field at the operative wavelength and the one or more optical interfaces of the optical device; defining an initial structure for each of the one or more optical interfaces, each initial structure being defined using a plurality of voxels; determining values for at least one structural parameter and/or at least one functional parameter of the one or more optical interfaces by solving Maxwell's equations; and defining a final structure of the one or more optical interfaces based on the values for the one or more structural and/or functional parameters.

Abstract: An all solid-state laser light source device comprises a diode-pump laser and the following devices sequentially arranged in an optical path direction of laser light: a coupling optical fiber, a coupling lens assembly, and a resonant cavity. An anisotropic laser crystal is provided in the resonant cavity. Absorption spectra of the anisotropic laser crystal comprise a ? polarization absorption spectrum and a ? polarization absorption spectrum. Each of the ? polarization absorption spectrum and the ? polarization absorption spectrum has a peak pump region and a left pump region and a right pump region arranged on either side of the peak pump region. Pump light outputted by diode-pump laser has a wavelength ? falling within the left pump region or the right pump region.

Abstract: An X-ray laser has a target anode of a crystalline material that emits X-ray radiation in response to excitation and that is located on a thermally conductive substrate. An X-ray source provides an input X-ray beam that illuminates a predetermined volume of the target anode at a predefined angle relative to a surface of the anode so as to induce a Borrmann mode standing wave in the predetermined volume. An electron source outputs an electron beam that is incident on the Borrmann mode region so as to cause electron impact ionization of the crystalline material and thereby induce stimulated emission of a coherent output X-ray beam.

Abstract: A waveguide gas laser having a laser resonator cavity of a variable length is subjected to cyclical varying of the length of the cavity during generation of a laser beam a length variation amount sufficient to force a laser beam generated in the resonator cavity though a substantially complete optical longitudinal cavity mode at a rate operable to smooth at least one laser beam parameter variation. In this manner variation in the laser beam parameter is averaged by moving through at least a portion of an optical longitudinal cavity mode.

Abstract: A laser device includes a substrate including a principal surface and a recess provided in the principal surface; a laser oscillation unit fixed to the principal surface in direct contact with the principal surface or with an adhesive interposed between the laser oscillation unit and the principal surface, the laser oscillation unit having an emission surface from which laser light that diverges as the laser light travels is emitted along the principal surface; and a reflecting member fixed to a bottom surface of the recess and having an inclined surface that is inclined with respect to the principal surface so as to reflect the laser light. At least a portion of the inclined surface is positioned in a space inside the recess.

Abstract: A collinear T-cavity VECSEL system generating intracavity Hermite-Gaussian modes at multiple wavelengths, configured to vary each of these wavelengths individually and independently. A mode converter element and/or an astigmatic mode converter is/are aligned intracavity to reversibly convert the Gaussian modes to HG modes to Laguerre-Gaussian modes, the latter forming the system output having any of the wavelengths provided by the spectrum resulting from nonlinear frequency-mixing intracavity (including generation of UV, visible, mid-IR light). The laser system delivers Watt-level output power in tunable high-order transverse mode distribution.