Patents Examined by Lan Vinh
  • Patent number: 10294422
    Abstract: This invention in general relates to a transparent conductive layer comprising a silver nanowire. This invention further relates to an etching composition suitable for etching a transparent conductive layer comprising a silver nanowire to form a pattern. This invention further relates to a transparent conductive electrode manufactured by etching a transparent conductive film comprising a silver nanowire. The etching composition may comprise an oxidizing agent and a ligand. The oxidizing agent may be a first chemical compound that can react with silver metal to form a silver compound; and the ligand may be a second chemical compound that can react with the silver compound to form a water soluble coordination complex of the silver ion.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: May 21, 2019
    Inventor: Hailiang Wang
  • Patent number: 10283369
    Abstract: Embodiments of the invention provide a method for atomic layer etching (ALE) of a substrate. According to one embodiment, the method includes providing a substrate, and exposing the substrate to hydrogen fluoride (HF) gas and a boron-containing gas to etch the substrate. According to another embodiment, the method includes providing a substrate containing a metal oxide film, exposing the substrate to HF gas to form a fluorinated surface layer on the metal oxide film, and exposing the substrate to a boron-containing gas to remove the fluorinated surface layer from the metal oxide film. The exposures may be repeated at least once to further etch the metal oxide film.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: May 7, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Robert D. Clark, Kandabara N. Tapily
  • Patent number: 10280512
    Abstract: In one embodiment, an apparatus to selectively deposit a carbon layer on substrate, comprising a plasma chamber to receive a flow of carbon-containing gas; a power source to generate a plasma containing the carbon-containing gas in the plasma chamber; an extraction plate to extract an ion beam from the plasma and direct the ion beam to the substrate, the ion beam comprising ions having trajectories forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, the extraction plate further configured to conduct a neutral species derived from the carbon-containing gas to the substrate; and a substrate stage facing the extraction plate and including a heater to heat the substrate to a first temperature, when the ion beam and carbon-containing species impinge on the substrate.
    Type: Grant
    Filed: July 27, 2015
    Date of Patent: May 7, 2019
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Alex Tsung-Liang Chen, Simon Ruffell
  • Patent number: 10280082
    Abstract: A method of preparing aqueous hydrogen fluoride is provided. The method includes providing a composition including a cross-linked polymer with absorbed hydrogen fluoride. The cross-linked copolymer includes acrylamide units and acrylic acid salt units. The method further includes contacting the composition with water to release at least a portion of the hydrogen fluoride from the composition to the water to form the aqueous hydrogen fluoride.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: May 7, 2019
    Assignee: Honeywell International Inc.
    Inventors: Matthew H. Luly, Bernard E. Pointner
  • Patent number: 10273577
    Abstract: Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.
    Type: Grant
    Filed: October 5, 2016
    Date of Patent: April 30, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ranga Rao Arnepalli, Nilesh Chimanrao Bagul, Prerna Sonthalia Goradia, Robert Jan Visser
  • Patent number: 10269663
    Abstract: An apparatus of a wafer processing apparatus includes at least one memory and logic, at least a portion of which is implemented in circuitry of the wafer processing apparatus including at least one processor coupled to the at least one memory. The logic may provide a 3D model of a surface of a wafer, the wafer defining a wafer plane; and modify a surface feature in a Z-direction along the surface of the wafer based on at least one of: an X-critical dimension (CD) extending along an X-direction of the wafer plane, and a Y-CD extending along a Y direction of the wafer plane.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: April 23, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Morgan D. Evans, Tristan Ma, Kevin Anglin, Motoya Okazaki, Johannes M. van Meer
  • Patent number: 10269580
    Abstract: A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: April 23, 2019
    Assignee: International Business Machines Corporation
    Inventors: Christine Armstrong, Matthew W. Copel, Yu Luo, Paul M. Solomon
  • Patent number: 10269579
    Abstract: A method of manufacturing a semiconductor device includes providing a substrate including a silicon oxide layer and a metal oxide layer covering the silicon oxide layer. A CMP slurry is prepared. The CMP slurry includes plural abrasive particles bearing negative charges, a Lewis base including a (XaYb)? group, and a buffer solution. The X represents a IIIA group element or an early transitional metal, and Y represents a pnictogen element, a chalcogen element or a halogen element. The CMP slurry has a pH in a range substantially from 2 to 7. Next, a planarization operation is performed on a surface of the metal oxide layer until a surface of the silicon oxide layer exposed. The planarization operation has a high polishing selectivity of the metal oxide layer with respect to the silicon oxide layer.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: April 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shen-Nan Lee, Teng-Chun Tsai, Chung-Wei Hsu, Chen-Hao Wu, Tsung-Ling Tsai
  • Patent number: 10258975
    Abstract: Method of forming micro channels in a polymeric nanocomposite film is provided. The method includes combining one or more monomers to form a mixture and adding a plurality of carbon fibers with metal nanoparticles dispersed therein to the mixture prior to or concurrently with formation of a polymer from the monomers. The method also includes adding at least one hydrophobic agent and at least one plasticizer to the polymer to form the polymeric nanocomposite film and forming a plurality of laser-etched micro channels in a surface of the polymeric nanocomposite film.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: April 16, 2019
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Nishith Verma, Janakarajan Ramkumar, Prateek Khare
  • Patent number: 10249510
    Abstract: An etching method including the following steps is provided. A substrate is provided first. A first region and a second region adjacent to the first region are defined on the substrate. A material layer is formed on the substrate. A pattern mask is formed on the material layer. The patterned mask includes a first part covering the material layer on the first region and a second part including a lattice structure. The lattice structure includes a plurality of openings and a plurality of shielding parts. Each opening exposes a part of the material layer on the second region. Each shielding part is located between the openings adjacent to one another. Each shielding part covers a part of the material layer on the second region. An isotropic etching process is then performed to remove the material layer exposed by the openings and the material layer covered by the shielding parts.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: April 2, 2019
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Li-Wei Feng, Ying-Chiao Wang, Yu-Chieh Lin, Tsung-Ying Tsai, Chien-Ting Ho
  • Patent number: 10242849
    Abstract: A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: March 26, 2019
    Assignee: Lam Research Corporation
    Inventors: Yassine Kabouzi, Jorge Luque, Andrew D. Bailey, III, Mehmet Derya Tetiker, Ramkumar Subramanian, Yoko Yamaguchi
  • Patent number: 10240035
    Abstract: The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, can be provided with a variety of required functions without constraint and, especially, etching selectivity can be secured, making the block copolymer effectively applicable to such uses as pattern formation.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: March 26, 2019
    Assignee: LG Chem, Ltd.
    Inventors: Je Gwon Lee, No Jin Park, Jung Keun Kim, Se Jin Ku, Mi Sook Lee, Eun Young Choi, Sung Soo Yoon, Hyung Ju Ryu
  • Patent number: 10214444
    Abstract: The present invention relates to a method for treating a surface of an object which comprises the steps consisting of bringing the surface to be treated in contact with a diffusion intermediate and then maintaining said surface to be treated in contact with said diffusion intermediate without any movement relatively to each other, said diffusion intermediate being impregnated with a corrosive solution prior to contacting or during said contacting. The present invention also relates to a device implemented during such a method.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: February 26, 2019
    Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
    Inventors: Fabien Pilon, Philippe Belleville, Sébastien Lambert, Olivier Rondeau, Sandrine Thomas
  • Patent number: 10207469
    Abstract: Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.
    Type: Grant
    Filed: December 8, 2015
    Date of Patent: February 19, 2019
    Assignee: UNIVERSITY OF HOUSTON SYSTEM
    Inventors: Vincent M. Donnelly, Demetre J. Economou, Siyuan Tian
  • Patent number: 10211126
    Abstract: This invention relates to a method of manufacturing an object with microchannels provides therethrough, and more particularly, but not exclusively, to a method of manufacturing a micro heat exchanger with microchannels provided therethrough. The method includes the steps of providing a metal base layer made from a first metal; forming a plurality of spaced apart ridges, made from a second metal, on the base layer; depositing more of the first metal onto the ridges in order to cover the ridges; and removing the ridges using a chemical etching process so as to produce microchannels in a body made of the first metal.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: February 19, 2019
    Assignee: UNIVERSITY OF THE WITWATERSRAND, JOHANNESBURG
    Inventors: Agripa Hamweendo, Ionel Botef
  • Patent number: 10199252
    Abstract: Etch uniformity is improved by providing a thermal pad between an insert ring and electrostatic chuck in an etching chamber. The thermal pad provides a continuous passive heat path to dissipate heat from the insert ring and wafer edge to the electrostatic chuck. The thermal pad helps to keep the temperature of the various components in contact with or near the wafer at a more consistent temperature. Because temperature may affect etch rate, such as with etching hard masks over dummy gate formations, a more consistent etch rate is attained. The thermal pad also provides for etch rate uniformity across the whole wafer and not just at the edge. The thermal pad may be used in an etch process to perform gate replacement by removing hard mask layer(s) over a dummy gate electrode.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: February 5, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chin-Huei Chiu, Tsung Fan Yin, Chen-Yi Liu, Hua-Li Hung, Xi-Zong Chen, Yi-Wei Chiu
  • Patent number: 10192735
    Abstract: A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.
    Type: Grant
    Filed: August 3, 2017
    Date of Patent: January 29, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tatsushi Ueda, Tadashi Terasaki, Unryu Ogawa, Akito Hirano
  • Patent number: 10191379
    Abstract: In systems and methods for removing a photoresist film off of a wafer, the wafer is moved into a bath of a process liquid in a process tank. The process liquid removes the photoresist film from the wafer. The process liquid is pumped from the process tank to a filter assembly and moved through filter media to filter out solids from the process liquid, and the filtered process liquid is returned to the process tank. A scraper scrapes the filter media to prevent clogging of the filter media by accumulated solids.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: January 29, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Paul R. McHugh, Kyle Moran Hanson, John L. Klocke, Eric J. Bergman, Stuart Crane, Gregory J. Wilson
  • Patent number: 10177002
    Abstract: Improved methods for chemically etching silicon are provided herein. In some embodiments, a method of etching a silicon material includes: (a) exposing the silicon material to a halogen-containing gas; (b) evacuating the halogen-containing gas from the semiconductor processing chamber; (c) exposing the silicon material to an amine vapor to etch a monolayer of the silicon material; (d) evacuating the amine vapor from the semiconductor processing chamber and; (e) optionally repeating (a)-(d) to etch the silicon material to a predetermined thickness.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: January 8, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Geetika Bajaj, Ravindra Patil, Prerna Goradia, Robert Jan Visser
  • Patent number: 10177017
    Abstract: Embodiments of the present disclosure provide methods for conditioning a plasma processing chamber to maintain a reliable and predicable processing conditions while performing a oxide removal process on a substrate. In one embodiment, a method for conditioning a plasma processing chamber includes supplying a first gas mixture including an inert gas into a processing chamber a first period of time in absent of a substrate, supplying a second gas mixture including an inert gas, a hydrogen containing gas and a halogen containing gas for a second period of time in absent of the substrate, and supplying a third gas mixture including an inert gas and a hydrogen containing gas for a third period of time in absent of the substrate in the processing chamber.
    Type: Grant
    Filed: July 5, 2017
    Date of Patent: January 8, 2019
    Assignee: Applied Materials, Inc.
    Inventor: Chun Yan