Patents Examined by Lan Vinh
  • Patent number: 10665481
    Abstract: An upper processing liquid nozzle moves back and forth between a processing position above a substrate held on a spin chuck and a standby position outside a processing cup. Before a processing liquid is discharged from the upper processing liquid nozzle having moved to the processing position, a camera takes a discharge standard image of an imaging region including the tip of the upper processing liquid nozzle. Then, multiple monitor target images of the imaging region taken successively by the camera are compared sequentially to the discharge standard image to determine discharge of a processing liquid from the upper processing liquid nozzle. The discharge standard image is obtained for each process on a new target substrate. This eliminates influence of a substrate surface to appear as a background both of the monitor target image and the discharge standard image. Thus, discharge of a processing liquid can be detected reliably.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: May 26, 2020
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Hiroshi Sano, Hiroaki Kakuma
  • Patent number: 10665485
    Abstract: A heat treatment container (1) is provided with support members (6) for supporting a disc-shaped SiC substrate (2), which is an object, at a time of an etching treatment of the SiC substrate (2). Each of the support members (6) has an inclined surface (6F) for supporting a lower surface end (2E) of the SiC substrate (2), the inclined surface being inclined so as to increasingly approach the centerline of the SiC substrate (2) going downward. More specifically, each of the support members (6) is formed in a conical shape with a diameter that increases going downward, and a conical surface which is the peripheral surface of each supporting member forms the inclined surface (6F). A vertically-middle section of the inclined surface (6F) contacts the lower surface end (2E) of the SiC substrate (2).
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: May 26, 2020
    Assignee: TOYO TANSO CO., LTD.
    Inventors: Satoshi Torimi, Masato Shinohara, Norihito Yabuki, Satoru Nogami
  • Patent number: 10658205
    Abstract: A chemical dispensing apparatus for providing a chlorine vapor to a reaction chamber is disclosed. The chemical dispensing apparatus may include: a chemical storage vessel configured for storing a chlorine-containing chemical species, a reservoir vessel in fluid communication with the chemical storage vessel, the reservoir vessel configured for converting the chlorine-containing chemical species to the chlorine vapor, and a reaction chamber in fluid communication with the reservoir vessel. Methods for dispensing a chlorine vapor to a reaction chamber are also disclosed.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: May 19, 2020
    Assignee: ASM IP Holdings B.V.
    Inventor: Varun Sharma
  • Patent number: 10655035
    Abstract: The present disclosure is directed to a fluid composition that can be used in chemical-mechanical polishing processes of inorganic material. The fluid composition can include at least one oxidizing agent and a multivalent cation component. Using the fluid composition during a chemical-mechanical polishing process can facilitate a relatively defect free material surface after polishing while achieving a suitable material removal rate.
    Type: Grant
    Filed: May 24, 2018
    Date of Patent: May 19, 2020
    Assignee: SAINT-GOBAIN CERAMICS & PLASTICS, INC.
    Inventors: Douglas Edwin Ward, Jason A. Sherlock, Angela Wamina Kwapong
  • Patent number: 10641699
    Abstract: A method for making carrier for use in single molecule detection is related. The method includes following steps: firstly, placing a middle layer on a substrate; secondly, providing a carbon nanotube composite structure, wherein the carbon nanotube composite structure includes a carbon nanotube structure and a protective layer coated on the carbon nanotube structure, the carbon nanotube structure includes a plurality of carbon nanotubes intersected with each other and defines a plurality of openings; thirdly, placing the carbon nanotube composite structure on a surface of the middle layer, wherein parts of the surface are exposed through the plurality of openings; fourthly, forming the patterned bulge by dry etching the middle layer using the carbon nanotube composite structure as a mask, wherein the patterned bulge includes a plurality of strip-shaped bulges intersected with each other; depositing the metal layer on the patterned bulge.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: May 5, 2020
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Ying-Cheng Wang, Yuan-Hao Jin, Qun-Qing Li, Shou-Shan Fan
  • Patent number: 10629450
    Abstract: The present invention relates to a method for selectively etching a silicon oxide film in a semiconductor manufacturing process and comprises: a step of introducing a substrate having a silicon nitride film and a silicon oxide film to a substrate support part inside a reactor; a step of heating the substrate introduced into the reactor, so as to maintain a first temperature; a first step of supplying halogen gas and basic gas to the inside of the reactor, while the first temperature is maintained, so as to be reacted with the silicon oxide film formed on the substrate, thereby forming a reaction product on the substrate; a second step of heating the substrate, having the reaction product, up to a second temperature so as to remove the reaction product; a third step of cooling the temperature of the substrate down to the first temperature; and a step of repetitively performing the first step to the third step a preset number of times.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: April 21, 2020
    Assignee: TES CO., LTD
    Inventors: Tae-Yong Sim, Jong-Bae Lee
  • Patent number: 10629447
    Abstract: A plasma etching method includes: a deposition step of providing an atmosphere containing a first processing gas including at least one gas including either or both of a fluorine atom and a carbon atom and a second processing gas having a noble gas as a main component inside a processing vessel, and forming a thin film; and an etching step of providing an atmosphere containing at least the second processing gas inside the processing vessel and plasma etching a processing subject substrate. The deposition step and the etching step are switched between and implemented alternately. When an atmosphere containing the first processing gas and the second processing gas is provided inside the processing vessel in the deposition step, the atmosphere is configured to contain at least 2.4 times and not more than 3.1 times more fluorine atoms than carbon atoms by mass.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: April 21, 2020
    Assignee: ZEON CORPORATION
    Inventor: Go Matsuura
  • Patent number: 10600684
    Abstract: In one embodiment, a method of forming a barrier layer is provided. The method includes positioning a substrate in a processing chamber, forming a barrier layer over the substrate and in contact with the underlayer, and annealing the substrate. The substrate comprises at least one underlayer having cobalt, tungsten, or copper. The barrier layer has a thickness of less than 70 angstroms.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: March 24, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Susmit Singha Roy, Yihong Chen, Abhijit Basu Mallick, Srinivas Gandikota
  • Patent number: 10583452
    Abstract: A method for coating a thin film in a rolling manner and a thin film coating apparatus are provided. The method includes: floating a thin film material on a liquefied material; rolling a cylindrical substrate after contacting the cylindrical substrate with the thin film material; and coating the thin film material on a surface of the cylindrical substrate by using an attraction force between the surface of the cylindrical substrate and the thin film material.
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: March 10, 2020
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Taek-Soo Kim, Sumin Kang
  • Patent number: 10584265
    Abstract: The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of aqueous colloidal silica particles, preferably, spherical colloidal silica particles, one or more amine carboxylic acids having an isolectric point (pI) below 5, preferably, an acidic amino acid or a pyridine acid, and one or more ethoxylated anionic surfactants having a C6 to C10 alkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: March 10, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Naresh Kumar Penta, Yi Guo, David Mosley, Matthew Van Hanehem, Kwadwo E. Tettey
  • Patent number: 10586710
    Abstract: Provided is a method of etching a silicon-containing film made of at least one of silicon oxide and silicon nitride. The etching method includes: (i) preparing a workpiece having a silicon-containing film and a mask provided on the silicon-containing film in a chamber body of a plasma processing apparatus, in which an opening is formed in the mask; and (ii) etching the silicon-containing film, in which plasma is produced in the chamber body from processing gas containing fluorine, hydrogen, and iodine in order to etch the silicon-containing film, and a temperature of the workpiece is set to a temperature of 0° C. or less.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: March 10, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Maju Tomura, Yoshihide Kihara, Masanobu Honda
  • Patent number: 10580650
    Abstract: Embodiments of the invention provide a substrate processing method for bottom-up formation of a film in a recessed feature. According to one embodiment, the method includes providing a substrate containing a first layer and a second layer on the first layer, the second layer having a recessed feature extending through the second layer, and depositing a non-conformal mask layer on the substrate, where the mask layer has an overhang at an opening of the recessed feature. The method further includes removing the mask layer from a bottom of the recessed feature, while maintaining at least a portion of the overhang at the opening, selectively depositing a film on the bottom of the recessed feature, and removing the mask layer overhang from the substrate. The processing steps may be repeated at least once until the film has a desired thickness in the recessed feature.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: March 3, 2020
    Assignee: Tokyo Electron Limited
    Inventors: David L. O'Meara, Kandabara N. Tapily, Nihar Mohanty
  • Patent number: 10580658
    Abstract: A method for preferential oxidation of silicon in substrates containing silicon (Si) and germanium (Ge) is described. According to one embodiment, the method includes providing a substrate containing Si and Ge, forming a plasma containing H2 gas and O2 gas, and exposing the substrate to the plasma to preferentially oxidize the Si relative to the Ge. The substrate may be further processed by removing the oxidized Si from the substrate.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: March 3, 2020
    Assignee: Tokyo Electron Limited
    Inventor: Kandabara N. Tapily
  • Patent number: 10563662
    Abstract: A part that includes a metal layer positioned on it. The part includes a composite core. A metal layer is positioned on the composite core such that the layer of adhesive is sandwiched between the composite core and the metal layer. A layer of smut that is positioned between the layer of adhesive and the metal layer.
    Type: Grant
    Filed: November 4, 2016
    Date of Patent: February 18, 2020
    Assignee: General Electric Company
    Inventors: Manuel Acosta, Gregory Gemeinhardt, Joshua Miller, Michael Franks, Lara Liou, James Hahn
  • Patent number: 10566181
    Abstract: Examples of a substrate processing apparatus include a stage, a driving unit for rotating the stage, an electrode facing only a part of an outer edge of the stage, a high-frequency power supply unit for supplying high-frequency power to the electrode, and a gas supply device for supplying gas to a gap between the electrode and the stage.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: February 18, 2020
    Assignee: ASM IP HOLDING B.V.
    Inventor: Yukihiro Mori
  • Patent number: 10566206
    Abstract: Processing methods may be performed to remove unwanted materials from a substrate, such as a native oxide material. The methods may include forming an inert plasma within a processing region of a processing chamber. Effluents of the inert plasma may be utilized to modify a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor chamber. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: February 18, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Mandar Pandit, Nitin Ingle
  • Patent number: 10559472
    Abstract: An embodiment of the present disclosure provides a method of processing a workpiece in which a plurality of holes are formed on a surface of the workpiece. The method includes a first sequence including a first process of forming a film with respect to an inner surface of each of the holes and a second process of isotropically etching the film. The first process includes a film forming process using a plasma CVD method, and the film contains silicon.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: February 11, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Tabata, Toru Hisamatsu, Yoshihide Kihara
  • Patent number: 10553447
    Abstract: Semiconductor structures and fabrication methods thereof are provided. An exemplary fabrication process includes providing a base substrate; forming a carbon-containing dielectric layer over the base substrate; and performing a chemical mechanical polishing (CMP) process on the carbon-containing dielectric layer. The chemical mechanical polishing process includes performing a plurality of polishing processes on the carbon-containing dielectric layer and a weak acid solution is used to clean a polishing pad before and after each of the polishing processes.
    Type: Grant
    Filed: May 11, 2018
    Date of Patent: February 4, 2020
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventor: Li Jiang
  • Patent number: 10553407
    Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.
    Type: Grant
    Filed: August 17, 2018
    Date of Patent: February 4, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koichi Nagami, Kazunobu Fujiwara, Tatsuro Ohshita, Takashi Dokan, Koji Maruyama, Kazuya Nagaseki, Shinji Himori
  • Patent number: 10546748
    Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer is formed conformally over sidewalls and horizontal surfaces of protruding features on a substrate. A passivation layer is then formed over tin oxide on the sidewalls, and tin oxide is then removed from the horizontal surfaces of the protruding features without being removed at the sidewalls of the protruding features. The material of the protruding features is then removed while leaving the tin oxide that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers. Hydrogen-based and chlorine-based dry etch chemistries are used to selectively etch tin oxide in a presence of a variety of materials. In another method a patterned tin oxide hardmask layer is formed on a substrate by forming a patterned layer over an unpatterned tin oxide and transferring the pattern to the tin oxide.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: January 28, 2020
    Assignee: Lam Research Corporation
    Inventors: Jengyi Yu, Samantha Tan, Yu Jiang, Hui-Jung Wu, Richard Wise, Yang Pan, Nader Shamma, Boris Volosskiy