Patents Examined by Lan Vinh
  • Patent number: 11456180
    Abstract: An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.
    Type: Grant
    Filed: July 16, 2020
    Date of Patent: September 27, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takahiro Yokoyama, Maju Tomura, Yoshihide Kihara, Ryutaro Suda, Takatoshi Orui
  • Patent number: 11447660
    Abstract: A polishing composition for use in polishing an object to be polished, which comprises abrasive grains, a dispersing medium, and an additive, wherein the abrasive grains are surface-modified, the additive is represented by the following formula 1: wherein in the formula 1, X1 is O or NR4, X2 is a single bond or NR5, R1 to R5 are each independently a hydrogen atom; a hydroxy group; a nitro group; a nitroso group; a C1-4 alkyl group optionally substituted with a carboxyl group, an amino group, or a hydroxy group; or CONH2; with the proviso that R2 and R5 may form a ring; when X2 is a single bond, R3 is not a hydrogen atom, or R1 to R3 are not a methyl group; and when X2 is NR5 and three of R1 to R3 and R5 are a hydrogen atom, the other one is not a hydrogen atom or a methyl group; and a pH is 5.0 or less.
    Type: Grant
    Filed: November 19, 2020
    Date of Patent: September 20, 2022
    Assignee: FUJIMI INCORPORATED
    Inventors: Satoru Yarita, Yukinobu Yoshizaki
  • Patent number: 11450531
    Abstract: The present invention relates to an atomic layer etching method for etching a surface of a substrate by using an atomic layer etching apparatus.
    Type: Grant
    Filed: December 17, 2020
    Date of Patent: September 20, 2022
    Assignee: WONIK IPS CO., LTD.
    Inventors: Jun Hyuck Kwon, Jin Sung Chun, Sang Jun Park, Byung Chul Cho, Kwang Seon Jin
  • Patent number: 11442357
    Abstract: Provided is a mask blank, including a phase shift film. The phase shift film has a structure where a first layer and a second layer are stacked in this order from a side of the transparent substrate. The first layer is provided in contact with a surface of the transparent substrate. Refractive indexes n1 and n2 of the first layer and the second layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relation n1<n2. Extinction coefficients k1 and k2 of the first layer and the second layer, respectively, at a wavelength of the exposure light satisfy the relation k1<k2. Film thicknesses d1 and d2 of the first layer and the second layer, respectively, satisfy the relation d1<d2.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: September 13, 2022
    Assignee: HOYA CORPORATION
    Inventors: Hitoshi Maeda, Hiroaki Shishido, Masahiro Hashimoto
  • Patent number: 11434391
    Abstract: Provided are a polishing composition capable of effectively reducing or eliminating a step difference on a surface of an object to be polished consisting of a single material, a method of using such a polishing composition, and a method of producing a substrate. The polishing composition of the present invention contains an abrasive grain, a pH adjusting agent, a dispersing medium, and at least one kind of first water-soluble polymer having a lactam structure and at least one kind of second water-soluble polymer containing an alkylene oxide represented by the following Formula (I) in the structure, CxH2xOn??(I) (in the Formula (I), X is an integer of 3 or more and n is an integer of 2 or more.).
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: September 6, 2022
    Assignee: FUJIMI INCORPORATED
    Inventor: Jingzhi Chen
  • Patent number: 11437244
    Abstract: A dry etching gas composition is used which contains a saturated or unsaturated hydrofluorocarbon compound (excluding 1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane) represented by a general formula (1): CxHyFz (where x, y, and z are integers that satisfy 2?x?4, y+z?2x+2, and 0.5<z/y<2). Use of the etching gas composition containing the above-described hydrofluorocarbon makes it possible to selectively etch a nitrogen-containing silicon-based film (b1) with respect to a silicon oxide film, a non-silicon-based mask material, or a polycrystalline silicon film.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: September 6, 2022
    Assignee: KANTO DENKA KOGYO CO., LTD.
    Inventors: Korehito Kato, Yoshihiko Iketani, Yukinobu Shibusawa, Hisashi Shimizu
  • Patent number: 11421156
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: August 23, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Patent number: 11424106
    Abstract: Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode.
    Type: Grant
    Filed: May 28, 2018
    Date of Patent: August 23, 2022
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Yuki Kondo, Kenetsu Yokogawa, Masahito Mori, Satoshi Une, Kazunori Nakamoto
  • Patent number: 11424128
    Abstract: A substrate etching apparatus for etching a substrate, the substrate etching apparatus includes a treatment container configured to accommodate a substrate, a stage on which the substrate is placed, the stage being disposed in the treatment container, a gas supply configured to supply a treatment gas from an upper space above the stage toward the stage, and a gas exhauster configured to evacuate an interior of the treatment container. The gas supply includes a central region facing a central part of the stage and an outer peripheral region having a same central axis as the central region and configured to surround the central region. The gas supply is capable of supplying the treatment gas to each of the central region and the outer peripheral region.
    Type: Grant
    Filed: March 17, 2020
    Date of Patent: August 23, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuji Asakawa, Nobuhiro Takahashi
  • Patent number: 11424123
    Abstract: In certain embodiments, a method of forming a semiconductor device includes forming a patterned resist layer over a hard mask layer using an extreme ultraviolet (EUV) lithography process. The hard mask layer is disposed over a substrate. The method includes patterning the hard mask layer using the patterned resist layer as an etch mask. The method includes smoothing the hard mask layer by forming, using a first atomic layer etch step, a first layer by converting a first portion of the hard mask layer, and by removing, using a second atomic layer etch step, the first layer.
    Type: Grant
    Filed: April 17, 2020
    Date of Patent: August 23, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Eric Chih-Fang Liu, Akiteru Ko, Angelique Raley, Henan Zhang, Shan Hu, Subhadeep Kal
  • Patent number: 11417527
    Abstract: A method of forming a film on a substrate that includes an etching layer and a mask formed on the etching layer. The method comprises (a) exposing the substrate, in a reaction chamber, to a precursor to dispose precursor particles on at least a sidewall of a recess in the etching layer; (b) supplying an inhibitor gas and a modification gas to the reaction chamber to generate a plasma; and (c) modifying the precursor particles on the sidewall into a protective film while the inhibitor gas and the modification gas are supplied in the reaction chamber.
    Type: Grant
    Filed: August 28, 2020
    Date of Patent: August 16, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Takayuki Katsunuma
  • Patent number: 11417530
    Abstract: An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.
    Type: Grant
    Filed: July 16, 2020
    Date of Patent: August 16, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takahiro Yokoyama, Maju Tomura, Yoshihide Kihara, Ryutaro Suda, Takatoshi Orui
  • Patent number: 11417535
    Abstract: A technique protects a mask in plasma etching of a silicon-containing film. An etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask. The mask contains carbon. The etching method further includes etching the silicon-containing film with a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen and phosphorus. The etching includes forming a carbon-phosphorus bond on a surface of the mask.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: August 16, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takahiro Yokoyama, Maju Tomura, Yoshihide Kihara, Satoshi Ohuchida
  • Patent number: 11410852
    Abstract: A method of plasma etching includes receiving, by a plasma processing apparatus, a substrate into a processing chamber of the plasma processing apparatus. The substrate includes an etchable layer and a first mask layer overlying the etchable layer. The first mask layer includes a plurality of openings vertically aligned with exposed regions of the etchable layer. The method further includes forming, in the processing chamber, a protective layer over the first mask layer and the exposed regions and etching, in the processing chamber, the protective layer and the exposed regions to remove the protective layer and form recesses in the etchable layer.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: August 9, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Katie Lutker-Lee, Angelique Raley
  • Patent number: 11404250
    Abstract: An edge ring, for a plasma etcher, may include a circular bottom portion with an opening sized to receive an electrostatic chuck supporting a semiconductor device, and a circular top portion integrally connected to a first top part of the circular bottom portion. The edge ring may include a circular chamfer portion integrally connected to a second top part of the circular bottom portion and integrally connected to a side of the circular top portion. The circular chamfer portion may include an inner surface that is angled radially outward from the opening at less than ninety degrees.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: August 2, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Yu Wang, Hung-Bin Lin, Shih-Ping Hong, Shih-Hao Chen, Chen-Hsiang Lu, Ping-Chung Lee
  • Patent number: 11404279
    Abstract: There is provision of an etching method including a step of preparing a substrate over which a boron film or a boron-containing film is formed, a step of supplying a process gas containing chlorine gas, fluorine-containing gas, and hydrogen-containing gas, and a step of etching the boron film or the boron-containing film via a mask using a plasma formed from the process gas.
    Type: Grant
    Filed: August 19, 2020
    Date of Patent: August 2, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Takahiro Ohori, Taiki Miura, Masahiro Ogasawara
  • Patent number: 11398388
    Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include selectively etching gallium oxide relative to gallium nitride. The method may include flowing a reagent in a substrate processing region housing the semiconductor substrate. The reagent may include at least one of chloride and bromide. The method may further include contacting an exposed region of gallium oxide with the at least one of chloride and bromide from the reagent to form a gallium-containing gas. The gallium-containing gas may be removed by purging the substrate processing region with an inert gas. The method includes recessing a surface of the gallium oxide. The method may include repeated cycles to achieve a desired depth.
    Type: Grant
    Filed: September 8, 2020
    Date of Patent: July 26, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly
  • Patent number: 11392036
    Abstract: Multi-layer photoresists, methods of forming the same, and methods of patterning a target layer using the same are disclosed. In an embodiment, a method includes depositing a reflective film stack over a target layer, the reflective film stack including alternating layers of a first material and a second material, the first material having a higher refractive index than the second material; depositing a photosensitive layer over the reflective film stack; patterning the photosensitive layer to form a first opening exposing the reflective film stack, patterning the photosensitive layer including exposing the photosensitive layer to a patterned energy source, the reflective film stack reflecting at least a portion of the patterned energy source to a backside of the photosensitive layer; patterning the reflective film stack through the first opening to form a second opening exposing the target layer; and patterning the target layer through the second opening.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: July 19, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Liang-Yi Chang, Tai-Chun Huang, Chi On Chui
  • Patent number: 11390806
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: July 19, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Patent number: 11393664
    Abstract: Provided is a substrate placing table (15) capable of reducing influences of external factors such as the temperature inside a chamber (11). The substrate placing table (15) disposed in the chamber (11) in a plasma processing apparatus (1) includes an electrostatic chuck (61) and a cooling jacket (62), and the electrostatic chuck (61) consists of an upper disk part (61a) having an electrode (71) for electrostatic attraction incorporated therein, and a lower disk part (61b) having a greater diameter than the upper disk part (61a) and having a heater (72) incorporated therein.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: July 19, 2022
    Assignee: SPP TECHNOLOGIES CO., LTD.
    Inventor: Yasuyuki Hayashi