Abstract: Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode.

Abstract: In certain embodiments, a method of forming a semiconductor device includes forming a patterned resist layer over a hard mask layer using an extreme ultraviolet (EUV) lithography process. The hard mask layer is disposed over a substrate. The method includes patterning the hard mask layer using the patterned resist layer as an etch mask. The method includes smoothing the hard mask layer by forming, using a first atomic layer etch step, a first layer by converting a first portion of the hard mask layer, and by removing, using a second atomic layer etch step, the first layer.

Abstract: A substrate etching apparatus for etching a substrate, the substrate etching apparatus includes a treatment container configured to accommodate a substrate, a stage on which the substrate is placed, the stage being disposed in the treatment container, a gas supply configured to supply a treatment gas from an upper space above the stage toward the stage, and a gas exhauster configured to evacuate an interior of the treatment container. The gas supply includes a central region facing a central part of the stage and an outer peripheral region having a same central axis as the central region and configured to surround the central region. The gas supply is capable of supplying the treatment gas to each of the central region and the outer peripheral region.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A technique protects a mask in plasma etching of a silicon-containing film. An etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask. The mask contains carbon. The etching method further includes etching the silicon-containing film with a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen and phosphorus. The etching includes forming a carbon-phosphorus bond on a surface of the mask.

Abstract: An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.

Abstract: A method of forming a film on a substrate that includes an etching layer and a mask formed on the etching layer. The method comprises (a) exposing the substrate, in a reaction chamber, to a precursor to dispose precursor particles on at least a sidewall of a recess in the etching layer; (b) supplying an inhibitor gas and a modification gas to the reaction chamber to generate a plasma; and (c) modifying the precursor particles on the sidewall into a protective film while the inhibitor gas and the modification gas are supplied in the reaction chamber.

Abstract: A method of plasma etching includes receiving, by a plasma processing apparatus, a substrate into a processing chamber of the plasma processing apparatus. The substrate includes an etchable layer and a first mask layer overlying the etchable layer. The first mask layer includes a plurality of openings vertically aligned with exposed regions of the etchable layer. The method further includes forming, in the processing chamber, a protective layer over the first mask layer and the exposed regions and etching, in the processing chamber, the protective layer and the exposed regions to remove the protective layer and form recesses in the etchable layer.

Abstract: An edge ring, for a plasma etcher, may include a circular bottom portion with an opening sized to receive an electrostatic chuck supporting a semiconductor device, and a circular top portion integrally connected to a first top part of the circular bottom portion. The edge ring may include a circular chamfer portion integrally connected to a second top part of the circular bottom portion and integrally connected to a side of the circular top portion. The circular chamfer portion may include an inner surface that is angled radially outward from the opening at less than ninety degrees.

Abstract: There is provision of an etching method including a step of preparing a substrate over which a boron film or a boron-containing film is formed, a step of supplying a process gas containing chlorine gas, fluorine-containing gas, and hydrogen-containing gas, and a step of etching the boron film or the boron-containing film via a mask using a plasma formed from the process gas.

Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include selectively etching gallium oxide relative to gallium nitride. The method may include flowing a reagent in a substrate processing region housing the semiconductor substrate. The reagent may include at least one of chloride and bromide. The method may further include contacting an exposed region of gallium oxide with the at least one of chloride and bromide from the reagent to form a gallium-containing gas. The gallium-containing gas may be removed by purging the substrate processing region with an inert gas. The method includes recessing a surface of the gallium oxide. The method may include repeated cycles to achieve a desired depth.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: Multi-layer photoresists, methods of forming the same, and methods of patterning a target layer using the same are disclosed. In an embodiment, a method includes depositing a reflective film stack over a target layer, the reflective film stack including alternating layers of a first material and a second material, the first material having a higher refractive index than the second material; depositing a photosensitive layer over the reflective film stack; patterning the photosensitive layer to form a first opening exposing the reflective film stack, patterning the photosensitive layer including exposing the photosensitive layer to a patterned energy source, the reflective film stack reflecting at least a portion of the patterned energy source to a backside of the photosensitive layer; patterning the reflective film stack through the first opening to form a second opening exposing the target layer; and patterning the target layer through the second opening.

Abstract: Provided is a substrate placing table (15) capable of reducing influences of external factors such as the temperature inside a chamber (11). The substrate placing table (15) disposed in the chamber (11) in a plasma processing apparatus (1) includes an electrostatic chuck (61) and a cooling jacket (62), and the electrostatic chuck (61) consists of an upper disk part (61a) having an electrode (71) for electrostatic attraction incorporated therein, and a lower disk part (61b) having a greater diameter than the upper disk part (61a) and having a heater (72) incorporated therein.

Abstract: A chemical dispensing apparatus for providing a chlorine vapor to a reaction chamber is disclosed. The chemical dispensing apparatus may include: a chemical storage vessel configured for storing a chlorine-containing chemical species, a reservoir vessel in fluid communication with the chemical storage vessel, the reservoir vessel configured for converting the chlorine-containing chemical species to the chlorine vapor, and a reaction chamber in fluid communication with the reservoir vessel. Methods for dispensing a chlorine vapor to a reaction chamber are also disclosed.

Abstract: This disclosure relates to a surface processing apparatus for use in the surface processing of a substrate. The surface processing apparatus comprises a plasma source including a wall defining a plasma chamber and an excitation source adjacent the wall and a processing chamber in which a substrate having a predetermined maximum lateral dimension is mounted in use, the processing chamber being operatively connected to the plasma source. A transmission plate for the transmission of plasma in use is arranged between the plasma source and processing chamber, the transmission plate comprising a plurality of apertures. The apertures follow a non-rectilinear path through the transmission plate such that there is no line of sight in use between a substrate with the predetermined maximum lateral dimension mounted in the processing chamber and the most intense region of the plasma in the plasma chamber.

Abstract: Disclosed herein are composite materials and methods for forming the same. In one embodiment, a composite material comprises a primer layer comprising a polyalkylenimine, and an active layer comprising a binder and a metal organic framework (MOF), wherein the MOF comprises a bidentate organic compound coordinated to a metal ion, and wherein the active layer forms a coating on the primer layer.

Abstract: An etching method is performed using a plasma processing apparatus that includes a processing chamber equipped with a support stage that accommodates a substrate, a first annular member disposed around the substrate and at least a part of the first annular member is disposed in a space between a lower surface of an outer peripheral portion of the substrate and an upper surface of the support stage, and a second annular member disposed outside the first annular member. The etching method includes adjusting a dielectric constant in the space using the first annular member in accordance with consumption of the second annular member; and etching the substrate.

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.