Abstract: A spin-transfer torque magnetic random access memory (STTMRAM) cell is disclosed. The memory cell comprises a selected magnetic tunnel junction (MTJ) identified to be programmed; a first transistor having a first port, a second port and a gate, the first port of the first transistor coupled to the selected MTJ; a first neighboring MTJ coupled to the selected MTJ through the second port of the first transistor; a second transistor having a first port, a second port, and a gate, the first port of the second transistor coupled to the selected MTJ; a second neighboring MTJ coupled to the selected MTJ through the second port of the second transistor; a first bit/source line coupled to the second end of the selected MTJ; and a second bit/source line coupled to the second end of the first neighboring MTJ and the second end of the second neighboring MTJ.

Abstract: A data reception chip coupled to an external memory comprising a first input-output pin to output first data and including a comparison module and a voltage generation module is provided. The comparison module is coupled to the first input-output pin to receive the first data and compares the first data with a first reference voltage to identify the value of the first data. The voltage generation module is configured to generate the first reference voltage and includes a plurality of first resistors and a first selection unit. The first resistors are connected in series with one another and dividing a first operation voltage to generate a plurality of first divided voltages. The first selection unit selects one of the first divided voltages as the first reference voltage according to a first control signal.

Abstract: A memory device includes a plurality of banks suitable for including a plurality of word lines, a plurality of latch units each suitable for generating a first address by inverting a predetermined bit of an address of an activated word line of a corresponding bank and latching the first address as a target address in sections other than a target refresh section, and latching an operation address as the target address once in an all-bank refresh section of the target refresh section, wherein all of the plurality of banks are refreshed in the all-bank refresh section. All the plurality of banks are refreshed in the all-bank refresh section, and an address operation unit suitable for generating the operation address by adding or subtracting an operation value to or from the target address. A word line among the plurality of word lines that is selected using the target address may be refreshed in the target refresh section.

Abstract: Phase change memory devices, systems, and associated methods are provided and described. Such devices, systems, and methods manage and reduce voltage threshold drift to increase read accuracy of phase change memory. A pre-read pulse can be delivered across a select device and a phase change material of a phase change memory cell to at least partially reset the voltage threshold drift of the select device while maintaining a program state of the phase change material.

Abstract: This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a contact plug which is disposed over a substrate and extends in a vertical direction; a variable resistance element which is coupled to the contact plug and includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer which surrounds a sidewall of the contact plug and has a same magnetization direction as the second magnetic layer.

Abstract: Phase change memory devices, systems, and associated methods are provided and described. Such devices, systems, and methods manage and reduce voltage threshold drift to increase read accuracy of phase change memory. A pre-read pulse can be delivered across a select device and a phase change material of a phase change memory cell to at least partially reset the voltage threshold drift of the select device while maintaining a program state of the phase change material.

Abstract: Examples of the present disclosure provide apparatuses and methods related to performing a loop structure for operations performed in memory. An example apparatus might also include a controller configured to cause sensing circuitry to iterate through a plurality of first elements and a plurality of second elements via a loop structure to perform an operation using the plurality of first elements and the plurality of second elements, wherein a conditional statement associated with the loop structure is used to determine whether at least one of a plurality of bits stored as an iterator mask has a particular bit-value. An example apparatus might also include sensing circuitry controllable to perform a shift operation using the iterator mask at each iteration of the loop structure and perform an AND operation using the iterator mask at each iteration of the loop structure.

Abstract: After a predetermined period of time in a life cycle of a flash memory device, a plurality of reliability values corresponding to a plurality of reads of one or more of the plurality of memory cells are generated; each of the reads using a variation of a predetermined read level voltage. An offset voltage is then identified, offset from the read level voltage. The offset voltage corresponds to a zero crossing point in the range of the reliability values. Once the offset voltage is identified, the read level voltage is set to a calibrated voltage based on the offset voltage.

Abstract: A memory chip includes a memory array and a two-dimensional sensing system. The array includes a multiplicity of memory cells connected in rows by word lines and in columns by bit lines. The sensing system moves a read point two-dimensionally within a two-dimensional read space as the two-dimensional read space shrinks and shifts over the life of the chip.

Abstract: An input receiver is provided with a pass transistor that is controlled to pass an input signal to an inverter only while a first binary state for the input signal equals a low voltage. The input receiver also includes a source follower transistor configured to pass a threshold-voltage-reduced version of the input signal while the first binary state of the input signal equals a high voltage greater than the low voltage.

Abstract: A semiconductor memory device may include a plurality of cell strings. Each of the cell strings may include at least one source selection transistor connected to a common source line, a plurality of memory cells connected to the common source line through the at least one source selection transistor. Each of the cell strings may include at least one source selection line connected to source selection transistors of the plurality of the cell strings. The semiconductor memory device may include peripheral circuit. The peripheral circuit may be configured to control the plurality of the cell strings. The peripheral circuit may be configured to perform a program on the source selection transistors connected to a selected source selection line by applying a program voltage to the selected source selection line among the at least one source selection line, and by applying a reference voltage to the common source line.

Abstract: A memory cell includes a floating gate transistor, a word line transistor, a first capacitance element, and a second capacitance element. The floating gate transistor has a first terminal for receiving a bit line signal, a second terminal, and a floating gate. The word line transistor has a first terminal coupled to the second terminal of the floating gate transistor, a second terminal for receiving a third voltage, and a control terminal for receiving a word line signal. A voltage passing device is for outputting a second voltage during an inhibit operation and a first voltage during a program operation or an erase operation. The first capacitance element is coupled to the first voltage passing device and the floating gate, and for receiving a first control signal. The second capacitance element is for receiving at a second control signal.

Abstract: A cell for a non-volatile ternary content-addressable (TCAM) memory is provided. The cell comprises a first variable resistive element, a first transistor and a charge control transistor. Two terminals of the first variable resistive element are respectively electrically coupled to a first search-line and a storage node. A drain electrode of the first transistor is electrically coupled to the storage node. A source electrode of the first transistor is electrically coupled to a low-side search-line. A gate electrode of the charge control transistor coupled to a match-line is electrically coupled to the storage node. When the cell operates in a search phase and the first transistor is turned on, a pulse voltage is applied across the first search-line and the low-side search-line for determining whether the voltage of the storage node is larger than a match threshold during the period of the pulse.

Abstract: A circuit includes a capacitor and a memory element. The capacitor includes a first conductive layer, a first terminal, and a second terminal. The first conductive layer includes a first plurality of bars extending along a first direction and parallel to one another, where two adjacent bars of the first plurality of bars have a first capacitance therebetween. The first terminal is coupled with a first bar of the two adjacent bars, and the second terminal is coupled with a second bar of the two adjacent bars. The memory element has an input coupled with the first terminal and an output coupled with the second terminal. The capacitor is configured to inhibit changing a logic state at the input of the memory element.

Abstract: A memory system and dynamic memory cell programming process thereof is disclosed. The dynamic programming processes comprises the processes of: (a) determining a concurrent-programmable bit number in accordance with a current budget limit; (b) identifying, with a memory controller, a memory cell in a plurality of memory cells in need of programming; (c) performing programming operation on at least one of the memory cells in need of programming; (d) detecting, with a write-detection unit, an programming operation status of the memory cell being programmed and correspondingly generating a program completion indication; and (e) triggering programming operation to a subsequent one of the memory cells according to the program completion indication from the write-detection unit.

Abstract: A method of operating a memory device comprises receiving a first row address corresponding to a first word line in the first sub bank array and corresponding to a first word line in the second sub bank array, determining whether at least one of the first word lines has been replaced with a spare word line, (a) when neither of the first word lines has been replaced, receiving a first number of row addresses for refresh operations in order to refresh adjacent word lines to the first word lines, and (b) when at least one of the first word lines has been replaced with a spare word line, receiving a second number of row addresses for refresh operations in order to refresh adjacent word lines to any non-replaced first word and any spare word lines, wherein the second number is greater than the first number.

Abstract: Semiconductor memory devices and methods include a flash memory cell array fabricated in a well, with memory cells in the same column connected to each other in series and connected to a respective bit line. The memory devices also include a column decoder, a data register buffer unit, a row decoder, an erase control unit, and an input/output buffer unit. In one or more embodiments, the erase control unit applies voltages to the well to erase the memory cells in a manner that avoids breaking down p-n junctions formed by transistors fabricated in the well. In another embodiment, high voltage transistors are used to selectively isolate the bit lines from and couple the bit lines to a peripheral circuit in pairs so that each high voltage transistor is shared by two bit lines.

Abstract: Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory as non-volatile memory when power to the device is interrupted.

Abstract: To provide a semiconductor device having a novel structure. To provide a semiconductor device excellent in reducing power consumption. A memory cell including an SRAM capable of backing up data to the nonvolatile memory and a peripheral circuit of the memory cell are configured to offer different power gating states. In a first period, which is extremely short, the bit line is brought into an electrically floating state by turning off the switch. In a second period, which is longer than the first period, power gating is performed on the memory cell. In a third period, which is longer than the second period, power gating is performed on the memory cell and the peripheral circuits.

Abstract: A method for storing or switching. The method comprises: arranging a first layer including a first molecular network having a first 2D lattice structure and a second layer including a second molecular network having a second 2D lattice structure at a distance from each other such that the first and the second molecular network interact electronically via molecular orbital interactions, and rotating the first layer relative to the second layer by a rotation angle with a rotation device, wherein an electrical resistance between the first molecular network and the second molecular network changes as a function of the rotation angle, thereby storing information by switching the electrical resistance.