Abstract: An organic light emitting diode display includes: a substrate; a first electrode on the substrate; a second electrode opposed to the first electrode; a first light emitting unit and a second light emitting unit between the first electrode and the second electrode; and a charge generation layer between the first light emitting unit and the second light emitting unit. The first light emitting unit includes a blue fluorescent light emitting layer. The second light emitting unit includes a blue light emitting layer and a yellow light emitting layer.

Abstract: A flexible organic light emitting display (OLED) device includes a flexible substrate having a display area, a non-display area at a periphery of the display area and a folding region; at least one organic emitting diode on the flexible substrate in the display area; an encapsulation film covering the organic emitting diode; and a dam on the flexible substrate. The dam laterally surrounds the display area and includes: a first dam in the folding region; and a second dam outside the folding region, wherein the average thickness of the first dam is smaller than the average thickness of the second dam.

Abstract: A display device including a first substrate including a display area that displays an image and a peripheral area, in which no image is displayed, surrounding the display area. The display device further includes a plurality of pixels disposed in the display area. The display device additionally includes a first metal layer disposed above the first substrate in the peripheral area, and the first metal layer including a plurality of openings. The display device further includes a sealant disposed above the first metal layer, and surrounding the plurality of pixels. The display device additionally includes a plurality of second metal layers disposed above the first substrate and below the first metal layer in the peripheral area, and respectively overlapping the openings of the first metal layer. A part of the sealant is disposed in the plurality of openings.

Abstract: LED packages and related methods are provided. The LED packages can include a submount having a top and bottom surface and a plurality of top electrically conductive elements on the top surface of the submount. An LED can be disposed on one of the top electrically conductive elements. The LED can emit a dominant wavelength generally between approximately 600 nm and approximately 650 nm, and more particularly between approximately 610 nm and approximately 630 nm when an electrical signal is applied to the top electrically conductive elements. A bottom thermally conductive element can be provided on the bottom surface and is not in electrical contact with the top electrically conductive elements. A lens can be disposed over the LED. The LED packages can have improved lumen performances, lower thermal resistances, improved efficiencies, and longer operational lifetimes.

Abstract: Techniques for forming a metastable phosphorous P-doped silicon Si source drain contacts are provided. In one aspect, a method for forming n-type source and drain contacts includes the steps of: forming a transistor on a substrate; depositing a dielectric over the transistor; forming contact trenches in the dielectric that extend down to source and drain regions of the transistor; forming an epitaxial material in the contact trenches on the source and drain regions; implanting P into the epitaxial material to form an amorphous P-doped layer; and annealing the amorphous P-doped layer under conditions sufficient to form a crystalline P-doped layer having a homogenous phosphorous concentration that is greater than about 1.5×1021 atoms per cubic centimeter (at./cm3). Transistor devices are also provided utilizing the present P-doped Si source and drain contacts.

Abstract: An organic light emitting diode display includes: a substrate; a first electrode on the substrate; a second electrode opposed to the first electrode; a first light emitting unit and a second light emitting unit between the first electrode and the second electrode; and a charge generation layer between the first light emitting unit and the second light emitting unit. The first light emitting unit includes a blue fluorescent light emitting layer. The second light emitting unit includes a blue light emitting layer and a yellow light emitting layer.

Abstract: The present disclosure relates to an organic light emitting diode display having high luminescence. The present disclosure suggests an organic light emitting diode display comprising: a data line, a scan line and a driving current line defining a pixel area on a substrate; an anode electrode formed within the pixel area; an additional capacitance formed by overlapping expanded portions of the anode electrode with some portions of the driving current line; a bank defining a light emitting area in the anode electrode; an organic emission layer formed on the anode electrode; and a cathode electrode formed on the organic emission layer. The present disclosure suggests high luminescence organic light emitting diode display by including an additional capacitance for increasing the anode capacitance.

Abstract: An organic light-emitting diode display may have an array of pixels. The pixels may each have an organic light-emitting diode with a respective anode and may be formed from thin-film transistor circuitry formed on a substrate. A mesh-shaped path may be used to distribute a power supply voltage to the thin-film circuitry. The mesh-shaped path may have intersecting horizontally extending lines and vertically extending lines. The horizontally extending lines may be zigzag metal lines that do not overlap the anodes. The vertically extending lines may be straight vertical metal lines that overlap the anodes. The pixels may include pixels of different colors. Angularly dependent shifts in display color may be minimized by ensuring that the anodes of the differently colored pixels overlap the vertically extending lines by similar amounts.

Abstract: Disclosed is a light emitting diode using light of a short wavelength band. The light emitting diode includes a first conductivity type semiconductor layer having a front side and a back side, a second conductivity type semiconductor layer having a front side and a back side, an active layer formed between the back side of the first conductivity type semiconductor layer and the front side of the second conductivity type semiconductor layer, a first electrode electrically connected to the first conductivity type semiconductor layer, a second conductivity type reflective layer formed on the back side of the second conductivity type semiconductor layer, and a reflective part formed on the second conductivity type reflective layer to reflect light of a short wavelength band and light of a blue wavelength band and electrically connected to the second conductivity type semiconductor layer. The second conductivity type reflective layer includes DBR unit layers.

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

Abstract: A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, and a pixel electrode electrically connected to the transistor. In the capacitor, a conductive film formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the pixel electrode serves as the other electrode, and a nitride insulating film and a second oxide insulating film which are provided between the light-transmitting semiconductor film and the pixel electrode serve as the a dielectric film.

Abstract: An organic light emitting diode display panel includes data lines arranged in a first direction; gate lines arranged in a second direction to cross the data lines; a driving voltage line arranged in the first direction; a reference voltage line arranged in the first direction; data pads respectively at ends of corresponding ones of the data lines; a driving voltage pad at an end of the driving voltage line; and a reference voltage pad at an end of the reference voltage line. A first distance is defined between the driving voltage pad and an adjacent data pad, a second distance is defined between adjacent ones of the data pads, and a third distance is defined between the reference voltage pad and an adjacent data pad. At least two of the first distance, the second distance, and the third distance are different from each other.

Abstract: A semiconductor device includes a resistance variable element including a free magnetic layer, a tunnel barrier layer and a pinned magnetic layer; and a magnetic correction layer disposed over the resistance variable element to be separated from the resistance variable element, and having a magnetization direction which is opposite to a magnetization direction of the pinned magnetic layer.

Abstract: Embodiments of the present disclosure disclose a pixel structure, a mask plate, an organic electroluminescent display panel and a display device. The pixel structure comprises: a plurality of pixel units arranged in array, each pixel unit comprising four sub-pixels arranged diagonally and having the same shape and size; wherein colors of the four sub-pixels in each pixel unit are different from each other; colors of two adjacent sub-pixels in any two adjacent pixel units are same. The above pixel structure provided by embodiments of the present disclosure may enable the color of any sub-pixel in a pixel unit to be same as the colors of three sub-pixels that are located in other three pixel units adjacent to this pixel unit respectively and are symmetric with this sub-pixel relative to a same point.

Abstract: A semiconductor package may include a first redistribution layer (RDL); a first semiconductor chip on a top surface of the first RDL, the first semiconductor chip including a first circuit surface and a first bottom surface, the first circuit surface having first I/O pads thereon, the first I/O pads configured to electrically connect the first semiconductor chip to the first RDL via first wire bonds; a second semiconductor chip on the first semiconductor chip, the second semiconductor chip including a second circuit surface and a second bottom surface; and a second RDL on the second semiconductor chip, the second RDL facing both the first circuit surface and the second circuit surface.

Abstract: An organic light-emitting display including a substrate, an insulating layer on the substrate, the substrate and the insulating layer having an opening therethrough penetrating, a pixel array on the insulating layer, the pixel array including a plurality of pixels that surround the opening, a first pixel adjacent to the opening from among the plurality of pixels includes a pixel electrode layer, an intermediate layer on the pixel electrode layer, and an opposite electrode layer on the intermediate layer, and a stepped portion on the substrate and adjacent to the opening, the stepped portion having an under-cut step, wherein the intermediate layer including an organic emission layer, and wherein at least one of the intermediate layer and the opposite electrode layer extends toward the opening and is disconnected by the stepped portion.

Abstract: A semiconductor chip package includes a semiconductor chip disposed over a main surface of a carrier. An encapsulation body encapsulates the chip. First electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a first side face of the encapsulation body. Second electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a second side face of the encapsulation body opposite the first side face. A first group of the first electrical contact elements and a second group of the first electrical contact elements are spaced apart by a distance D that is greater than a distance P between adjacent first electrical contact elements of the first group and between adjacent first electrical contact elements of the second group. The distances D and P are measured between center axes of electrical contact elements.

Abstract: An organic light emitting diode display includes a substrate, a scan line on the substrate for transferring a scan signal, a data line crossing the scan line and for transferring a data signal, a driving voltage line crossing the scan line and for transferring a driving voltage, a switching thin film transistor coupled to the scan line and the data line, a driving thin film transistor coupled to a switching drain electrode of the switching thin film transistor, and an organic light emitting diode (OLED) coupled to a driving drain electrode of the driving thin film transistor, wherein a driving semiconductor layer of the driving thin film transistor is bent and in a plane substantially parallel to the substrate.

Abstract: A top-emitting organic electroluminescent display panel, a manufacturing method, and a display device. The top-emitting organic electroluminescent display panel comprises: a substrate, a layer of white organic light emitting diodes and a thin film encapsulation layer arranged on the substrate in sequence. The thin film encapsulation layer comprises at least two inorganic thin film layers and at least one organic thin film layer. At least one organic thin film layer is a color filter layer, the color filter layer being arranged between the at least two inorganic thin film layers. Since one of the organic thin film layers in the thin film encapsulation layer is a color filter layer, the color filter layer does not have to be arranged above the thin film encapsulation layer separately, thus reducing the number of film layers, simplifying the film layer structure, reducing manufacturing costs, and improving the luminous efficiency and the display effect.

Abstract: An organic EL device according to one aspect of the present invention includes: a base material; a first recess provided on a top surface of the base material; a reflective layer provided along a surface of the first recess; a filling layer filled in the first recess, the filling layer including a top surface on which a second recess is provided; a first electrode provided on an upper layer side of the filling layer; an organic layer comprising a light emitting layer provided on an upper layer side of the first electrode; and a second electrode provided on an upper layer side of the organic layer. Within the organic layer, a part of a light emitting area interposed between the first electrode and the second electrode is positioned inside the second recess The reflective layer is in contact with the first electrode in a periphery of the first recess.