Abstract: Method for encapsulating a chip with encapsulant, one portion of the surface of which chip must remain free of encapsulant, comprising the following steps: fixing the chip on a carrier with a suitable conductor structure, placing carrier and chip in one part of a mould, positioning a material on the mould or the chip surface, such that this material is clamped between the chip and mould after the mould has been closed, closing the mould, introducing the encapsulant and at least partially curing the encapsulant. The material is a heat-resistant moulding, having dimensions in the directions parallel to the surface of the chip such that an accurately delimited portion of the chip surface will be covered when the mould is closed, and a dimension in the direction perpendicular to the chip surface determined by the distance between the mould surface and the free portion of the chip surface.

Abstract: In a method for manufacturing a semiconductor device, an insulating film having pores is formed on a substrate, and an opening is formed in the insulating film. Thereafter, a material gas supplying Si or C is supplied to the insulating film. Thereby, deficient elements, such as Si or C, are supplied to the insulating film. Thereafter, the opening, including a barrier metal, is filled with a conductive member to form a wiring structure.

Abstract: The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.

Abstract: A method for fabricating a semiconductor device, comprising the steps of: forming an element on a silicon substrate; packaging the element; and annealing the packaged element before its transportation or long-term storage.

Abstract: A microelectronic component package includes a plurality of electrical leads which are coupled to a microelectronic component and which have exposed lengths extending outwardly beyond a peripheral edge of an encapsulant. A plurality of terminals may be positioned proximate a terminal face of the encapsulant and these terminals may be electrically coupled to the same leads. This can facilitate connection of the microelectronic component to a substrate using the leads as a conventional leaded package. The terminals, however, can facilitate stacking of the leaded package with one or more additional microelectronic components, e.g., a BGA package.

Abstract: A method of producing an electronic device electrically and mechanically couples an integrated circuit to a leadframe to produce an intermediate assembly. At least a portion of the intermediate assembly then is encapsulated with a molten encapsulating material. After it is encapsulated, the method permits the molten encapsulating material to substantially solidify. A method of detecting the orientation of a sensor as mounted to an external object also is disclosed.

Abstract: Packaging assembly method and systems include the use of a plastic substrate and one or more compliant fasteners, which can be connected to the plastic substrate, such that the compliant fastener provides an electrical connection to one or more electrical components. A plastic leadframe can therefore be formed, which is based upon the plastic substrate and the compliant fastener for attachment to other electrical components. The plastic substrate itself can function as a plastic trace or plastic substrate trace, and can be formed from plastic material such as thermoplastic or a thermoset material. The compliant fastener itself can be pushed into the plastic substrate at a connection point thereof for attachment of the compliant fastener to the plastic substrate. The connection point can be formed in the plastic substrate as one or more round holes, slots, rectangular holes or complex shapes. An interface is therefore for med between the plastic trace and the compliant fastener.

Abstract: An integrated circuit in which measurement of the alignment between subsequent layers has less susceptibility to stress induced shift. A first layer of the structure has a first overlay mark. A second and/or a third layer are formed in the alignment structure and on the first layer. Portions of the second and/or third layer are selectively removed from regions in and around the first overlay mark. A second overlay mark is formed and aligned to the first overlay mark. The alignment between the second overlay mark and first overlay mark may be measured with an attenuated error due to reflection and refraction or due to an edge profile shift of the first overlay mark.

Abstract: A method (300) for fabricating a lead frame (100), comprising forming a plurality of external leads (122) in a lead frame material (108), plating a metal (222) on all surfaces of the lead frame material (108), and subsequently forming a plurality of internal leads (124) in the lead frame material (108). The lead frame material (108) may comprise of a portion of a contiguous metal sheeting (204) rolled upon a first coil (202), wherein the contiguous metal sheeting (204) is fed into an external lead stamping apparatus (206), thus forming the external leads (122), and rolled onto a second coil (215). The portion is fed into a plating apparatus and plated with the metal (222), and rolled onto a third coil (218) prior to forming the plurality of internal leads (124). The third coil (218) can be unrolled into an internal lead stamping apparatus (226), thus forming the internal leads (124) of a lead frame (100).

Abstract: An electronic component and a method for making an electronic component are disclosed. The electronic component has a silicon package. The silicon package has a recess formed thereon in which a conductive region is placed. A bare die electronic device is disposed in the recess. The device has a top, a bottom, sides and a plurality of terminals, including a non-top terminal. The non-top terminal is electrically coupled to the conductive region. The electronic component is constructed by first creating a recess in a silicon wafer to a depth substantially equal to the first dimension of the bare die electronic device. A conductive material is applied to the recess. The electronic device is inserted into the recess so that the bottom terminal is coupled to the conductive material. A dielectric or other planarizing material is applied into the recess. Top and bottom contacts are then applied to form the electronic component so that it may be used as a ball grid array package.

Abstract: A wafer level package formed on an integrated circuit chip having bondpads and a fabrication method therefor is disclosed. The wafer level package comprises at least one first, second and third separation layer having at least one first and second conductive layer formed in-between the separation layers. The at least one first conductive layer is formed on the at least one first separation layer and is coupled to the bondpads. The at least one second conductive layer is formed on the at last one second separation layer wherein the at least one second conductive layer is electrically coupled to the at least one first conductive layer. The at least one third separation layer allows solder to be attached to the at least one second conductive layer for electrically coupling the solder to the bondpads. A chip ground plane is laid in the integrated circuit chip for providing a ground to the at least one first conductive layer and the solder.

Abstract: A method of bonding semiconductor devices is disclosed. The method comprises providing a first substrate having a first conductive interconnecting structure formed thereon and a second substrate having a second conductive interconnecting structure formed thereon. A first conductive passivation layer is selectively formed over exposed areas of the first conductive interconnecting structure. A second conductive passivation layer is selectively formed over exposed areas of the second conductive interconnecting structure. The first substrate and the second substrate are bonded together in such a way that the first conductive passivation layer bonds to the second conductive passivation layer to create a passivation-passivation interface.

Abstract: In a socket used to house semiconductor die during testing, a recessed socket contact and methods of making the same are provided that avoid pinching the die's contacts. Semiconductor fabrication techniques are used to construct a dense array of contacts by forming a plurality of interconnected silicon electric contacts on a substrate having a first side and a second side, each silicon electric contact having a portion connected to the first side of the substrate and a portion extending from the first side of the substrate, applying an alignment-preserving material to the second side of the substrate having the plurality of interconnected silicon electric contacts formed on the side thereof, and disconnecting the plurality of interconnected silicon electric contacts from having electrical connection therebetween.

Abstract: This invention discloses a method for configuring a power MOSFET package by packaging several paralleled and separated MOSFET chips in the assembly. The method further includes a step of connecting the gate pad on each of these MOSFET chips with a low-resistance gate bus. The package resistance and inductance are significantly reduced and switching speed and heat dissipation are substantially improved.

Abstract: An arrangement reduces stress in substrate-based chip packages, in particular of Ball Grid Arrays (BGA) with rear-side and/or edge protection. The chip is firmly connected to a substrate, which is provided on the side that is opposite from the chip with conducting tracks and micro-balls for making electrical contact with the next-higher wiring level. Regular trench-shaped structures are introduced into the substrate on the chip side thereof and at least enclosing the chip, in order to interrupt or shift the thermally induced mechanical stress in the substrate, indicated by the chip.

Abstract: An apparatus having and method of forming grooves in the surface of a substrate adjacent and parallel to sidewall locations for circuit chips or die mounted on the surface. The grooves have physical dimensions to retain fill material formed between the packages and the surface of the substrate so that the fill material does not bridge between chips, thus reducing warping of the substrate due to mismatches in coefficient of thermal expansion (CTE) between the fill material, the substrate, the chips, and mold material formed over the substrate, under fill, and chips.

Abstract: A lead-frame method and assembly for interconnecting circuits within a circuit module allows a circuit module to be fabricated without a circuit board substrate. Integrated circuit dies are attached to a metal lead-frame assembly and the die interconnects are wire-bonded to interconnect points on the lead-frame assembly. An extension of the lead-frame assembly out of the circuit interconnect plane provides external electrical contacts for connection of the circuit module to a socket.

Abstract: A microelectronic package includes a microelectronic element having faces and contacts and a flexible substrate spaced from and overlying a first face of the microelectronic element. The package also includes a plurality of conductive posts extending from the flexible substrate and projecting away from the first face of the microelectronic element, wherein at least some of the conductive posts are electrically interconnected with the microelectronic element, and a plurality of support elements supporting the flexible substrate over the microelectronic element. The conductive posts are offset from the support elements to facilitate flexure of the substrate and movement of the posts relative to the microelectronic element.

Abstract: A thin layer of silicon is deposited within a high aspect ratio feature to provide a template for selective deposition of oxide therein. In accordance with one embodiment, amorphous silicon is deposited within a shallow trench feature overlying an oxide liner grown therein. After exposure to sputtering to remove the amorphous silicon from outside of the trench, oxide is selectively deposited over the amorphous silicon to fill the trench from the bottom up without voids, thereby creating a shallow trench isolation (STI) structure. Deposition of the amorphous silicon or other silicon containing layers allows the selective oxide deposition step to be integrated with a thermally-grown oxide trench liner.

Abstract: A system and method for forming a novel C4 solder bump for BLM (Ball Limiting Metallurgy) includes a novel damascene technique is implemented to eliminate the Cu undercut problem and improve the C4 pitch. In the process, a barrier layer metal stack is deposited above a metal pad layer. A top layer of the barrier layer metals (e.g., Cu) is patterned by CMP. Only bottom layers of the barrier metal stack are patterned by a wet etching. The wet etch time for the Cu-based metals is greatly reduced resulting in a reduced undercut. This allows the pitch of the C4 solder bumps to be reduced. An alternate method includes use of multiple vias at the solder bump terminal.