Abstract: A semiconductor structure and its fabrication method. First sacrificial layers are formed on a base substrate. Channel structures are formed on the first sacrificial layers. Each channel structure includes stacked channel stack layer(s). Each channel stack layer includes a second sacrificial layer and a channel layer. Dummy gate structures crossing the channel structures are also formed on the base substrate. Etching resistance of the first sacrificial layers is smaller than etching resistance of the second sacrificial layers. The channel structures and the first sacrificial layers on two sides of each dummy gate structure are removed to form first grooves. The first sacrificial layers at the bottoms of the channel structures are removed to form second grooves connected to the first grooves. Isolation layers are formed in the second grooves; and source-drain doping layers are formed in the first grooves.

Abstract: A display device includes a display panel including: a transparent substrate; an inorganic light emitting element provided on the transparent substrate and configured to emit a light toward the transparent substrate; a first insulating layer provided on the inorganic light emitting element; and a thin film transistor provided on the first insulating layer; and a driver integrated circuit (IC) configured to drive the display panel, wherein at least a portion of the thin film transistor overlaps at least a portion of the inorganic light emitting element.

Abstract: Semiconductor structures and methods of fabrication are provided. A method according to the present disclosure includes receiving a workpiece that includes an active region over a substrate and having first semiconductor layers interleaved by second semiconductor layers, and a dummy gate stack over a channel region of the active region, etching source/drain regions of the active region to form source/drain trenches that expose sidewalls of the active region, selectively and partially etching second semiconductor layers to form inner spacer recesses, forming inner spacer features in the inner spacer recesses, forming channel extension features on exposed sidewalls of the first semiconductor layers, forming source/drain features over the source/drain trenches, removing the dummy gate stack, selectively removing the second semiconductor layers to form nanostructures in the channel region, and forming a gate structure to wrap around each of the nanostructures.

Abstract: A red LED includes a semiconductor LED layer having an active InGaN layer with intrinsic emission spectrum having LDom in a range of from 580 nm to 620 nm. A filter is positioned over the semiconductor LED layer to filter shorter wavelengths of the intrinsic emission spectrum and shift LDom by between 5 nm to 20 nm to a longer wavelength.

Abstract: Provided is a wavelength converter including a phosphor ceramic containing a first phosphor that emits fluorescence due to a parity-forbidden transition, and a phosphor part containing a second phosphor that emits fluorescence due to a parity-allowed transition. A main surface of the phosphor ceramic has a concave and convex structure including a plurality of convex parts and a plurality of concave parts. The phosphor part is arranged inside the plurality of concave parts in the phosphor ceramic. Also provided is a light emitting device including the wavelength converter, and a solid-state light source that emits light with which the wavelength converter is irradiated and which has a light emission peak within a wavelength range of 400 nm or more and less than 500 nm.

Abstract: A light-emitting device includes a first semiconductor layer having a first conductive type, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer and having a second conductive type that is electrically opposite to the first conductive type, an insulating film at least partially surrounding the first semiconductor layer, the active layer, and the second semiconductor layer, and a first plurality of photo-conversion particles provided inside the first semiconductor layer.

Abstract: A chip of a LED, comprising: a current blocking layer including a first current blocking layer grown along an epitaxial layer and a plurality of second current blocking layers disposed at one end of the first current blocking layer at intervals, the first current blocking layer gradually widens along a direction away from the second current blocking layers; a transparent conductive layer including a first transparent conductive layer and a second transparent conductive layer grown on the epitaxial layer, the first transparent conductive layer is grown on the current blocking layer and at least partially overlapped with the second current blocking layers; a metal finger electrode having a width gradually narrowed from the first end to the second end thereof and smaller than the width of the first current blocking layer, and the second current blocking layers are distributed around the first end of the metal finger electrode.

Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

Abstract: An LED lighting base includes an insulation housing and multiple conductive terminals fixed in the insulation housing by means of injection molding. The insulation housing is formed with a recessed compartment for receiving an LED chip assembly and an LED encapsulation resin disposed therein. Each of the conductive terminals includes a solder pad portion extending into the recessed compartment to electrically connect to the LED chip assembly and a pin portion exposed outside the insulation housing. Parts of the pin portions are grouped pairwise to form first pin pairs. One of the first pin pairs is arranged along a first trace and extends in a direction away from the insulation housing, remaining parts of the pin portions are arranged along a second trace. The first trace and the second trace intersect each other.

Abstract: A display panel is provided, including a metal layer and an elastic conductive layer disposed on a surface of the metal layer. A tensile strength of the elastic conductive layer is greater than a tensile strength of the metal layer. The elastic conductive layer can protect and buffer the metal layer during rolling or bending of the display panel, to effectively avoid the breakage of the metal layer caused by stress concentration.

Abstract: Device structures including a silicon-controlled rectifier and methods of forming a device structure including a silicon-controlled rectifier. The device structure comprises a first well and a second well in a semiconductor substrate, a first terminal including a first doped region in the first well, and a second terminal including a second doped region in the second well. The first well and the second doped region have a first conductivity type, and the second well and the first doped region have a second conductivity type opposite from the first conductivity type. The second well adjoins the first well along an interface. A third doped region includes a first portion in the first well and a second portion in the second well, and a gate structure that overlaps with a portion of the second well.

Abstract: The embodiment relates to a display device including a semiconductor light emitting device. A display device including the semiconductor light emitting device according to an embodiment can include a substrate, a first assembly electrode disposed on the substrate, a second assembly electrode branched and disposed above the first assembly electrode, an insulating layer disposed between the first assembly electrode and the second assembly electrode, an assembly barrier wall including a predetermined assembly hole and disposed on the second assembly electrode, and a semiconductor light emitting diode disposed in the assembly hole and electrically connected to the second assembly electrode.

Abstract: A colour conversion resonator system, comprising: a partially reflective region configured to transmit light of a first primary peak wavelength and to reflect light of a second primary peak wavelength; a further partially reflective region configured to at least partially reflect light with the second primary peak wavelength; and a colour conversion resonator cavity comprising at least one quantum well, wherein the colour conversion resonator cavity is arranged to: receive input light with the first primary peak wavelength through the partially reflective region; and convert, by the at least one quantum well, at least some of the received input light to provide light of the second primary peak wavelength such that light of the second primary peak wavelength resonates in the cavity and light with the resonant second primary peak wavelength is output through the further partially reflective region, wherein the at least one quantum well is placed to coincide with an antinode of the colour conversion resonator ca

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode, a first contact layer and a diffusion structure. The epitaxial structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer stacked in sequence. The second-type semiconductor layer has an outer surface relatively away from the first-type semiconductor layer. The first and second electrodes are respectively disposed on the epitaxial structure and electrically connected to the first-type and the second-type semiconductor layers. The first contact layer is disposed between the first electrode and the first-type semiconductor layer. The diffusion structure is disposed on a side of the second-type semiconductor layer away from the first-type semiconductor layer. A conductivity of the diffusion structure is less than that of the second-type semiconductor layer.

Abstract: An optical package structure includes a substrate, an optical chip disposed on the substrate, a ring-shaped supporting layer disposed on the optical chip, a light-permeable layer disposed on the ring-shaped supporting layer, and an encapsulant formed on the substrate. The optical chip has a pressure channel arranged therein. Two ends of the pressure channel are respectively arranged on an outer surface of the optical chip and are respectively located at two opposite sides of the ring-shaped supporting layer. The light-permeable layer, the ring-shaped supporting layer, and the optical chip are embedded in the encapsulant and jointly define an air chamber that is in fluid communication with the pressure channel. The encapsulant encloses the pressure channel, and the air chamber is enclosed.

Abstract: There is provided a micro-LED device having high applicability to fluid-based assembly technology, which includes: an n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; an insulating layer surrounding at least the outer circumferential surface of the active layer; and a multilayer electrode part disposed at the outer circumferential surface of the insulating layer.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly cover structure arrangements for packaged LED devices are disclosed. Cover structures include light-absorbing layers configured to absorb certain wavelengths of light while permitting other wavelengths to pass therethrough. Light-absorbing layers may include pigment materials of colors that absorb intended wavelengths of light. In certain aspects, an LED package may include an LED chip configured to emit light of a first peak wavelength and a cover structure that includes a light-absorbing layer with a pigment of a color that absorbs the first peak wavelength. Such an arrangement may be useful for embodiments that also include a lumiphoric material that converts a portion of the first peak wavelength to light of a second peak wavelength.

Abstract: A semiconductor structure includes an inductive metal line located in a dielectric material layer that overlies a semiconductor substrate and laterally encloses a first area; and an array of first ferromagnetic plates including a first ferromagnetic material and overlying or underlying the inductive metal line. For any first point that is selected within volumes of the first ferromagnetic plates, a respective second point exists within a horizontal surface of the inductive metal line such that a line connecting the first point and the second point is vertical or has a respective first taper angle that is less than 20 degrees with respective to a vertical direction. The magnetic field passing through the first ferromagnetic plates is applied generally along a hard direction of magnetization and the hysteresis effect is minimized.

Abstract: A liquid-droplet-like ink containing a plurality of vertical semiconductor light emitting element chips 40, each of which has a p-side electrode and an n-side electrode on the upper surface and the lower surface and is configured such that one of the p-side electrode and the n-side electrode is more strongly attracted to a magnetic field than the other is supplied to a chip joining part 421 on a lower electrode 420 on a mounting substrate 400, the semiconductor light emitting element chips 40 in the ink are joined to the chip joining part by applying an external magnetic field such that one of the p-side electrode and the n-side electrode faces to the chip joining part, and thereafter an upper electrode 430 having an upper electrode main line part 431 and a plurality of upper electrode branch line parts 432 which are connected by a thin film fuse 433 each other is formed as the upper layer of the semiconductor light emitting element chips 40 such that the other of the p-side electrode and the n-side electrode