Abstract: A display panel is provided, including a metal layer and an elastic conductive layer disposed on a surface of the metal layer. A tensile strength of the elastic conductive layer is greater than a tensile strength of the metal layer. The elastic conductive layer can protect and buffer the metal layer during rolling or bending of the display panel, to effectively avoid the breakage of the metal layer caused by stress concentration.

Abstract: Device structures including a silicon-controlled rectifier and methods of forming a device structure including a silicon-controlled rectifier. The device structure comprises a first well and a second well in a semiconductor substrate, a first terminal including a first doped region in the first well, and a second terminal including a second doped region in the second well. The first well and the second doped region have a first conductivity type, and the second well and the first doped region have a second conductivity type opposite from the first conductivity type. The second well adjoins the first well along an interface. A third doped region includes a first portion in the first well and a second portion in the second well, and a gate structure that overlaps with a portion of the second well.

Abstract: The embodiment relates to a display device including a semiconductor light emitting device. A display device including the semiconductor light emitting device according to an embodiment can include a substrate, a first assembly electrode disposed on the substrate, a second assembly electrode branched and disposed above the first assembly electrode, an insulating layer disposed between the first assembly electrode and the second assembly electrode, an assembly barrier wall including a predetermined assembly hole and disposed on the second assembly electrode, and a semiconductor light emitting diode disposed in the assembly hole and electrically connected to the second assembly electrode.

Abstract: A colour conversion resonator system, comprising: a partially reflective region configured to transmit light of a first primary peak wavelength and to reflect light of a second primary peak wavelength; a further partially reflective region configured to at least partially reflect light with the second primary peak wavelength; and a colour conversion resonator cavity comprising at least one quantum well, wherein the colour conversion resonator cavity is arranged to: receive input light with the first primary peak wavelength through the partially reflective region; and convert, by the at least one quantum well, at least some of the received input light to provide light of the second primary peak wavelength such that light of the second primary peak wavelength resonates in the cavity and light with the resonant second primary peak wavelength is output through the further partially reflective region, wherein the at least one quantum well is placed to coincide with an antinode of the colour conversion resonator ca

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode, a first contact layer and a diffusion structure. The epitaxial structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer stacked in sequence. The second-type semiconductor layer has an outer surface relatively away from the first-type semiconductor layer. The first and second electrodes are respectively disposed on the epitaxial structure and electrically connected to the first-type and the second-type semiconductor layers. The first contact layer is disposed between the first electrode and the first-type semiconductor layer. The diffusion structure is disposed on a side of the second-type semiconductor layer away from the first-type semiconductor layer. A conductivity of the diffusion structure is less than that of the second-type semiconductor layer.

Abstract: An optical package structure includes a substrate, an optical chip disposed on the substrate, a ring-shaped supporting layer disposed on the optical chip, a light-permeable layer disposed on the ring-shaped supporting layer, and an encapsulant formed on the substrate. The optical chip has a pressure channel arranged therein. Two ends of the pressure channel are respectively arranged on an outer surface of the optical chip and are respectively located at two opposite sides of the ring-shaped supporting layer. The light-permeable layer, the ring-shaped supporting layer, and the optical chip are embedded in the encapsulant and jointly define an air chamber that is in fluid communication with the pressure channel. The encapsulant encloses the pressure channel, and the air chamber is enclosed.

Abstract: There is provided a micro-LED device having high applicability to fluid-based assembly technology, which includes: an n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; an insulating layer surrounding at least the outer circumferential surface of the active layer; and a multilayer electrode part disposed at the outer circumferential surface of the insulating layer.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly cover structure arrangements for packaged LED devices are disclosed. Cover structures include light-absorbing layers configured to absorb certain wavelengths of light while permitting other wavelengths to pass therethrough. Light-absorbing layers may include pigment materials of colors that absorb intended wavelengths of light. In certain aspects, an LED package may include an LED chip configured to emit light of a first peak wavelength and a cover structure that includes a light-absorbing layer with a pigment of a color that absorbs the first peak wavelength. Such an arrangement may be useful for embodiments that also include a lumiphoric material that converts a portion of the first peak wavelength to light of a second peak wavelength.

Abstract: A semiconductor structure includes an inductive metal line located in a dielectric material layer that overlies a semiconductor substrate and laterally encloses a first area; and an array of first ferromagnetic plates including a first ferromagnetic material and overlying or underlying the inductive metal line. For any first point that is selected within volumes of the first ferromagnetic plates, a respective second point exists within a horizontal surface of the inductive metal line such that a line connecting the first point and the second point is vertical or has a respective first taper angle that is less than 20 degrees with respective to a vertical direction. The magnetic field passing through the first ferromagnetic plates is applied generally along a hard direction of magnetization and the hysteresis effect is minimized.

Abstract: A liquid-droplet-like ink containing a plurality of vertical semiconductor light emitting element chips 40, each of which has a p-side electrode and an n-side electrode on the upper surface and the lower surface and is configured such that one of the p-side electrode and the n-side electrode is more strongly attracted to a magnetic field than the other is supplied to a chip joining part 421 on a lower electrode 420 on a mounting substrate 400, the semiconductor light emitting element chips 40 in the ink are joined to the chip joining part by applying an external magnetic field such that one of the p-side electrode and the n-side electrode faces to the chip joining part, and thereafter an upper electrode 430 having an upper electrode main line part 431 and a plurality of upper electrode branch line parts 432 which are connected by a thin film fuse 433 each other is formed as the upper layer of the semiconductor light emitting element chips 40 such that the other of the p-side electrode and the n-side electrode

Abstract: The embodiment relates to a semiconductor light emitting device for a display panel and a display device including the same. The semiconductor light emitting device can include a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second reflective electrode layer electrically connected to the second conductivity-type semiconductor layer, a passivation layer disposed on the light emitting structure, a first reflective electrode layer disposed on a side surface of the light emitting structure. The first reflective electrode layer can include a first-first reflective electrode layer in contact with a side surface of the light emitting structure and a first-second reflective electrode layer connected to the first-first reflective electrode layer and disposed on the passivation layer.

Abstract: A light-emitting element includes: a semiconductor stack including: a first light-emitting unit comprising nitride semiconductors including a first n-side semiconductor layer, a first p-side semiconductor layer, and a first active layer disposed between the first n-side semiconductor layer and the first p-side semiconductor layer, a second light-emitting unit comprising nitride semiconductors including a second n-side semiconductor layer, a second p-side semiconductor layer, and a second active layer disposed between the second n-side semiconductor layer and the second p-side semiconductor layer, and a tunnel junction layer disposed between the first p-side semiconductor layer and the second n-side semiconductor layer; an n-side electrode electrically connected to the first n-side semiconductor layer; and a p-side electrode electrically connected to the second p-side semiconductor layer.

Abstract: A light emitting device according to an embodiment of the present disclosure includes a first conductivity type semiconductor region; a second conductivity type semiconductor region; and a light emitting region disposed between the first conductivity type semiconductor region and the second conductivity type semiconductor region, in which the second conductivity type semiconductor region includes a plurality of regions including Mg balls.

Abstract: A light-emitting diode includes a semiconductor light-emitting stack, a transparent conductive layer, a first current blocking layer, and a first electrode pad. The semiconductor light-emitting stack includes, in sequence from bottom to top, a second conductivity type semiconductor layer, a light-emitting layer, and a first conductivity type semiconductor layer. The transparent conductive layer is disposed on the first conductivity type semiconductor layer, and is formed with a first opening which is defined by an inner edge of the transparent conductive layer. The first current blocking layer is formed on the first conductivity type semiconductor layer. The first electrode pad is formed on and in contact with both the first current blocking layer and on the first conductivity type semiconductor layer. The first electrode pad has a width not greater than a dimension of the first opening.

Abstract: A color converter layer is provided. The color converter layer includes a first light blocking member in which a plurality of pixel regions comprising a first pixel region and a second pixel region are disposed to be spaced apart from each other, a first color converter disposed in the first pixel region for converting and emitting incident light into a first color, a second color converter disposed in the second pixel region for converting and emitting the incident light into a second color different from the first color, and a second light blocking member that extends with a preset thickness and is formed on a surface of the first light blocking member, and blocks transmission of the incident light into an adjacent pixel region by partitioning the first pixel region and the second pixel region. The preset thickness may be greater than the thickness of the first light blocking member.

Abstract: A method for selectively filling, with a filling liquid, a first cavity from among a plurality of cavities, each cavity opening out at a front face of a substrate. The method includes a processing step for altering the surface energy of the first internal surface of the first cavity or the surface energy of the second internal surfaces of the other cavities, such that the first surface has a first surface energy and the second surfaces have a second surface energy, and a step including a sequence for spreading the filling liquid, the first energy and the second energy being adjusted such that the first and the second surfaces exert an attracting effect and a repelling effect, respectively, on the liquid.

Abstract: Disclosed are an LED structure, an LED device and a manufacturing method for the LED structure. The LED structure includes a substrate structure including a substrate and a plurality of first stress modulation layers located on the substrate periodically and separately; and a light-emitting unit located on the substrate structure; wherein the substrate structure includes a first region of which upper surface is the first stress modulation layer and a second region of which upper surface is the substrate, and a light-emitting unit located on the first region and a light-emitting unit located on the second region have different light-emitting wavelengths, which realizes a light-emitting unit with two kinds of main light-emitting wavelengths on the same substrate.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with airgap structures and methods of manufacture. The structure includes: a semiconductor substrate with a trap-rich region; one or more airgap structures within the semiconductor substrate; at least one deep trench isolation structure laterally surrounding the one or more airgap structures and extending into the semiconductor substrate; and a device over the one or more airgap structures.

Abstract: The lighting device disclosed in the embodiment of the invention includes: a substrate including a recess; a light source on the substrate; a resin layer on the substrate; and a wavelength conversion layer on the resin layer. A portion of the resin layer is disposed in a recess of the substrate. A portion of the wavelength conversion layer is disposed on the recess of the substrate. The outermost surface of the portion of the resin layer disposed in the recess of the substrate may be located outside the inner surface of the wavelength conversion layer.