Abstract: An electronic device includes a first array of image pixels having inputs coupled to first selection tracks and outputs coupled to first output tracks, a second array of test pixels having inputs coupled to second selection tracks and outputs coupled to the first output tracks, and a third array of test pixels having inputs coupled to the first selection tracks and outputs coupled to second output tracks. A processor is coupled to receive output signals on the first and second output tracks. The output signals from the test pixels of the second and third arrays are fixed at one or the other of only two values in the absence of a defect. The output signals received by the processor over the first and second output tracks are processed to determine presence or absence of a defect.

Abstract: Disclosed is an image sensing device and an operating method thereof. The image sensing device may include an analyzer suitable for analyzing a state of each of multiple kernels based on system information and a plurality of pixel values, a detector suitable for detecting color noise of a target pixel value among pixel values included in a target kernel among the multiple kernels, according to the analysis result of the analyzer, and a corrector suitable for correcting the target pixel value according to the detection result of the detector.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes two or more pixels. The pixels each include a photoelectric converter, a charge holding section, and a transfer transistor. The charge holding section holds electric charge transferred from the photoelectric converter. The transfer transistor transfers electric charge from the photoelectric converter to the charge holding section. The pixels each further include a light blocking section that is disposed in a layer between the photoelectric converter and the charge holding section. The light blocking section has an opening which a vertical gate runs through. The pixels each further include a charge blocking section that blocks transfer of electric charge to the transfer transistor via a region between an edge, of the opening, closer to the charge holding section and the vertical gate.

Abstract: Disclosed herein are cameras and image sensors, and electronic devices containing them, having pixel arrays operable both for obtaining images and detecting flicker in ambient light. For flicker detection, such as prior to image capture, light-generated current from a set of pixels of the pixel array is received at a transimpedance amplifier (TIA) that is formed in a common semiconductor substrate with the pixel array. An output signal of the TIA is digitized and signal processed to detect the flicker in the ambient light. Also disclosed are image sensors having pixel arrays with an embedded modulated light source. The modulated light source may be used for proximity detection, either by time-of-flight or intensity variation of reflected light.

Abstract: An image sensor including: a pixel array including first and second pixel groups, each of the first and second pixel groups includes of pixels arranged in rows and columns; and a row driver configured to provide transmission control signals to the pixel array, the first pixel group includes a first auto-focus (AF) pixel including photodiodes arranged in a first direction, the pixels of the first pixel group output a pixel signal through a first column line, and the second pixel group includes a second AF pixel including photodiodes arranged in a second direction perpendicular to the first direction, the pixels of the second pixel group output a pixel signal through a second column line, and the first AF pixel of the first pixel group and the second AF pixel of the second pixel group receive same transmission control signals.

Abstract: A pixel array, an image sensor, and a self-checking method of the image sensor are provided. The pixel array includes a photosensitive pixel region, a first reference pixel region and/or a second reference pixel region; the photosensitive pixel region includes M rows and N columns of pixels arranged in an array; the first reference pixel region includes n columns of first reference pixels disposed corresponding to N columns of pixels of the photosensitive pixel region; the second reference pixel region includes m rows of the second reference pixels disposed corresponding to the M rows of pixels of the photosensitive pixel region. The first reference pixel region and/or the second reference pixel region can be used to implement a real-time self-checking function of the readout circuit and/or the control circuit in the image sensor, check in real time whether the image signal output by the image sensor is correct.

Abstract: In accordance with an embodiment, a power supply circuit includes: a first transistor device comprising a first gate associated with a first transconductance and a second gate associated with a transconductance greater than the first transconductance; and a second transistor device including a third gate associated with a second transconductance and a fourth gate associated with a transconductance greater than the second transconductance. The second transistor device is configured to supply power to at least one load, the first and the third gates are controlled by a closed regulation loop, and the second and the fourth gates are controlled by a sampled reference voltage.

Abstract: A signal processing device includes a plurality of pixel signal processing units and a signal line group. The plurality of pixel signal processing units is arranged in a first direction and a second direction, each of the plurality of signal processing units acquiring a digital signal having a plurality of bits based on an output from a corresponding avalanche photodiode. The signal line group is arranged corresponding to the plurality of pixel signal processing units arranged in the first direction and including a signal line to which a plurality of signals corresponding to a plurality of bits of different digits of the digital signal held in each of the plurality of pixel signal processing units arranged in the first direction are commonly output.

Abstract: An optical filter includes a filter array including filters two-dimensionally arrayed and a band-pass filter. The filters includes first and second filters. A transmission spectrum of each of the first and second filters has local maximum values of transmittance at three or more wavelengths included in a first wavelength region. The band-pass filter passes light in a second wavelength region including two or more wavelengths of the three or more wavelengths and not including one or more wavelengths of the three or more wavelengths. The filter array and the band-pass filter are disposed so that (a) the band-pass filter is located on an optical path of light that passes through the first and second filters or (b) the first and second filters are located on an optical path of light that passes through the band-pass filter.

Abstract: In order to achieve a photoelectric conversion device that enables suppressing the lowering in tone, a photoelectric conversion device has a pixel including a photoelectric conversion element that outputs a signal according to an incident photon; a photon counter that outputs a measured value according to the number of photons incident to the pixel, a time counter that measures a time until the measured value of the photon counter reaches a first threshold after the photon counter starts the measurement, and a sensitivity adjustment unit configured to perform a sensitivity change for the pixel during a time until the measured value of the photon counter reaches the first threshold after the photon counter starts the measurement.

Abstract: Disclosed is an image sensing device including a plurality of current cells whose total number to be used is adjusted based on a plurality of enable signals, and which are sequentially controlled based on a reset signal and a plurality of selection signals; a current-voltage conversion circuit suitable for converting a plurality of unit currents, which are supplied from current cells used among the plurality of current cells, into a ramp signal; and a first control circuit suitable for generating the plurality of enable signals based on a maximum conversion code value corresponding to a slope of the ramp signal.

Abstract: An image sensor may include an array of image pixels arranged in rows and columns. Each column of pixels may be coupled to current source transistors and capacitance cancellation circuitry. The capacitance cancellation circuitry may include capacitors, a common source amplifier transistor, an autozero switch, a switch for selectively deactivating at least one of the capacitors during sample-and-hold reset and sample-and-hold signal operations.

Abstract: A vibration device includes a cylindrical body including an opening, a light-transmissive cover joined to the cylindrical body, a piezoelectric element directly or indirectly joined to the cylindrical body and including first and second main surfaces, and a power feeder joined to the piezoelectric element. The power feeder includes a substrate including first and second surfaces, first and second power feeding electrodes on the first surface or the second surface, and first and second external connection electrodes. The power feeder sandwiches the piezoelectric element in a thickness direction, and the first and second power feeding electrodes are joined to the first main surface or the second main surface of the piezoelectric element. Portions of the substrate, which are not located on the first and second main surfaces of the piezoelectric element, are bent to sandwich the piezoelectric element.

Abstract: An image sensor includes a pixel array with pixels arranged in a first direction and a second direction, intersecting the first direction. Each of the pixels includes a photodiode, a pixel circuit below the photodiode, and a color filter on or above the photodiode. A logic circuit acquires a pixel signal from the pixels through a plurality of column lines extending in the second direction. The pixels include color pixels and white pixels, the number of white pixels being greater than the number of color pixels. The pixel circuit includes a floating diffusion in which charges of the photodiode are accumulated and transistors outputting a voltage corresponding to amounts of charges in the floating diffusion. Each of the color pixels shares the floating diffusion with at least one neighboring white pixel, adjacent thereto in the second direction, among the white pixels.

Abstract: To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

Abstract: Systems and methods are disclosed for high dynamic rate processing based on angular rate measurements. For example, methods may include receiving a short exposure image that was captured using an image sensor; receiving a long exposure image that was captured using the image sensor; receiving an angular rate measurement captured using an angular rate sensor attached to the image sensor during exposure of the long exposure image; determining, based on the angular rate measurement, whether to apply high dynamic range processing to an image portion of the short exposure image and the long exposure image; and responsive to a determination not to apply high dynamic range processing to the image portion, selecting the image portion of the short exposure image for use as the image portion of an output image and discard the image portion of the long exposure image.

Abstract: A radiation imaging system comprises a radiation imaging apparatus having a plurality of imaging modes, and a control apparatus configured to control imaging of a radiation image with respect to the radiation imaging apparatus. The radiation imaging system comprises: an obtaining unit configured to obtain information with respect to a communication state between the radiation imaging apparatus and the control apparatus; and a display control unit configured to cause a display unit of at least one of the radiation imaging apparatus and the control apparatus to display information indicating a margin in the communication state based on an imaging mode of the radiation imaging apparatus and the information with respect to the communication state.

Abstract: A pixel matrix includes a sub-matrix of four adjacent pixels. Each of the pixels of the sub-matrix comprises: a set of a photoelectric-effect element and a memory point, a detection node, a transfer gate. The binning stage is connected to the set and is common with an adjacent pixel of the sub-matrix. At least one detection node per sub-matrix is common to two adjacent pixels of the sub-matrix. The pixel matrix furthermore comprises at least one readout stage per sub-matrix, connected to the common detection node.

Abstract: An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels including: a photodiode; a floating diffusion node configured to accumulate photocharges generated from the photodiode; a first capacitor configured to store charges according to a voltage of the floating diffusion node which is reset; a second capacitor configured to store charges according to a voltage of the floating diffusion node in which the photocharges are accumulated; a first sampling transistor connected to a first output node and configured to sample charges to the first capacitor; a second sampling transistor connected to the first output node and configured to sample charges to the second capacitor; and at least one precharge select transistor connected to the first output node and configured to reset the first output node.

Abstract: An event-driven sensor including: a pixel array; a column readout circuit coupled to column output lines of the pixel array, the column readout circuit including a plurality of column register cells; and a row readout circuit including a readout memory having a storage location corresponding to each pixel of the pixel array, the readout memory having sets of one or more row lines for writing to rows of memory locations of the readout memory, wherein each row output line of the pixel array is coupled, via a corresponding row line control circuit, to a corresponding one of the sets of one or more row lines of the readout memory.