Abstract: An image sensing device may include a pixel circuit and a driving control circuit. The pixel circuit is configured to store photocharge, generated by a photoelectric conversion element, as image information. The driving control circuit may control the pixel circuit to adjust the signal conversion gain ratio depending on the illuminance of the incident light at the image sensing device.

Abstract: A vibration device includes a cylindrical body including a cavity, a first opening end surface, and a second opening end surface, a light-transmissive cover directly or indirectly bonded to the first opening end surface of the cylindrical body so as to cover the cavity of the cylindrical body, a piezoelectric body directly or indirectly bonded to the cylindrical body, and a buffer layer provided between at least one of the cylindrical body and the piezoelectric body, and the cylindrical body and the light-transmissive cover. The buffer layer includes an inner end portion on an inner side portion in a direction orthogonal or substantially orthogonal to the axial direction and an outer end portion on an outer side portion in a direction orthogonal or substantially orthogonal to the axial direction. A thickness of the inner end portion is larger than a thickness of the outer end portion.

Abstract: An apparatus includes a motion detection unit configured to detect a moving object in an angle of view based on an event signal indicating a location of a pixel where a luminance change occurs and time when the luminance change occurs, a shape detection unit configured to detect a shape of the moving object from frame data generated based on the event signal, and a control unit configured to change the angle of view, wherein in a case where the detected moving object is not currently detected, the shape detection unit detects the shape of the moving object by changing the angle of view by a predetermined value.

Abstract: An image sensor having improved image quality is provided. The image sensor includes a first array of pixels, a second array of pixels, and a binning module. The first array of pixels has a color pattern formed in an n×m array and includes at least first-color pixels, second-color pixels, and third color-pixels. The second array of pixels is adjacent to the first array of pixels and has the same color pattern formed in an n×m array as the first array of pixels, to include at least first-color pixels, second-color pixels, and third color-pixels. The binning module is configured to, for a sensed image: perform binning on the first-color pixels of the first array, the first-color pixels of the second array, the second-color pixels of the first array, and the third-color pixels of the second array, and not perform binning on the third-color pixels of the first array, and not perform binning on the second-color pixels of the second array.

Abstract: A system is disclosed for the automated correction of optical and digital aberrations in a digital imaging system. The system includes several main parts, including (a) digital filters, (b) hardware modifications, (c) digital system corrections, (d) digital system dynamics and (e) network aspects. The system solves numerous problems in still and video photography that are presented in the digital imaging environment.

Abstract: A photoelectric conversion apparatus includes a driving unit and a plurality of pixels. The pixel includes a first photoelectric conversion unit, a second photoelectric conversion unit, a charge-voltage conversion unit, a first transfer transistor, a second transfer transistor, a reset transistor, a microlens configured to condense incident light to the first photoelectric conversion unit and the second photoelectric conversion unit, and an output unit. The driving unit performs a first operation including a first reset operation and a first readout operation, and a second operation including a second reset operation and a second readout operation.

Abstract: An image sensing device includes a first pixel configured to generate an electrical signal in response to incident light and including a first optical filter configured to transmit the incident light corresponding to a first color; and a second pixel configured to generate another electrical signal in response to the incident light and including a second optical filter configured to transmit the incident light corresponding to the first color, wherein a thickness of the first optical filter is larger than a thickness of the second optical filter.

Abstract: The invalid pixel detection unit 32 detects an invalid pixel from a non-polarized image and a plurality of polarized images for different polarization directions obtained by performing image pickup using the polarization image pickup unit 20. For example, the invalid pixel detection unit 32 detects a saturated pixel having a pixel value larger than a preset saturation detection threshold and a black-crushed pixel having a pixel value smaller than a preset black crushing detection threshold as invalid pixels from a non-polarized image. The polarization information generation unit 33 performs processing of generating polarization information on the basis of the non-polarized image and polarized images and switches the processing of generating the polarization information depending on the detection result of the invalid pixels in the invalid pixel detection unit 32, so as to generate the polarization information without using the invalid pixels. Correct polarization information can be acquired.

Abstract: An array imaging apparatus having discrete camera modules is disclosed. In one embodiment, the apparatus comprises a substrate; and heterogeneous camera modules attached to the substrate and in a geometric relationship with each other, the heterogeneous camera modules having a substantially similar photometric response.

Abstract: A global shutter readout circuit includes a pixel enable signal and a first sample and hold (SH) signal that are configured to turn ON a pixel enable transistor and a first storage transistor at a first time during a global transfer period. The pixel enable signal is configured to begin a transition to an OFF level at a second time and complete the transition to the OFF level at a third time to turn OFF the pixel enable transistor. The first SH signal is configured to begin a transition to the OFF level at a fourth time, which occurs after the second and third times, and complete the transition to the OFF level at a fifth time to turn OFF the first storage transistor. An OFF transition duration between the fourth and fifth times is greater than an ON transition duration of the first SH signal at the first time.

Abstract: A method for processing image data having noise and information, including: acquiring input raw image data having pixels of an image sensor used to take the image data, processing the input data, and outputting processed image-output data. The step of acquiring input data includes acquiring an input-noise model from the input data, and the step of processing the input raw image data includes a preprocessing operation and determining an output-noise model adapted to reflect noise in the output data, and producing output raw-image data consistent with the output-noise model, and the step of outputting the processed image data includes storing and/or transmitting the output raw image data and the output-noise model, which together form the output data, in a manner linking the output raw image data to the output-noise model, thereby allowing processing of the output data, as input data, such that the processing is adapted for pipeline processing.

Abstract: A solid-state imaging device includes M pixel units to and a correction unit. The pixel unit includes a main amplifier, a capacitive element, a first switch, a second switch, a photodiode, a feedback capacitive element, and an initialization switch. The correction unit includes a null amplifier, a capacitive element, a first switch, and a second switch. An effective offset voltage of the main amplifier is small.

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A transfer transistor is configured to transfer the image charge from the photodiode to a floating diffusion. A reset transistor coupled between a reset voltage source and the floating diffusion. A lateral overflow integration capacitor (LOFIC) includes an insulating region disposed between a first metal electrode and a second metal electrode. The first metal electrode is coupled to a bias voltage source, the second metal electrode is selectively coupled to the floating diffusion, and excess image charge photogenerated by the photodiode during an idle period is configured to overflow from the photodiode through the transfer transistor into the floating diffusion.

Abstract: Provided is a depth sensor which includes a pixel and a row driver that controls the pixel, the pixel including a first tap, a second tap, a third tap, and a fourth tap, an overflow transistor, and a photoelectric conversion device. Each of the first tap, the second tap, the third tap, and the fourth tap includes a photo transistor, a transfer transistor, and a readout circuit. In a first integration period of a global mode, the row driver activates a second photo gate signal controlling the photo transistor of the second tap and a third photo gate signal controlling the photo transistor of the third tap. In a second integration period of the global mode, the row driver activates a first photo gate signal controlling the photo transistor of the first tap and a fourth photo gate signal controlling the photo transistor of the fourth tap.

Abstract: Low power event driven pixels with passive difference detection circuit (and reset control circuits for the same) are disclosed herein. In one embodiment, an event driven pixel comprises a photosensor; a photocurrent-to-voltage converter, and a difference circuit. The difference circuit includes a source follower transistor and a switched-capacitor filter having an input coupled to the photocurrent-to-voltage converter and an output coupled to a gate of the source follower transistor. The switched-capacitor filter includes a first capacitor coupled between the input and the output of the switched-capacitor filter, a second capacitor having a first plate coupled to the output of the switched-capacitor filter, and a reset transistor coupled between a reference voltage and the output of the switched-capacitor filter. The difference circuit is configured generate a difference signal that is indicative of whether the event driven pixel has detected an event in an external scene.

Abstract: A global shutter readout circuit includes a reset transistor coupled between a reset voltage and a bitline. A pixel enable transistor is coupled between the reset transistor and a source follower transistor. First and second terminals of the pixel enable transistor are coupled together in response to a pixel enable signal coupled to a third terminal of the pixel enable transistor. A first storage transistor coupled to the second terminal of the pixel enable transistor and the gate of the source follower transistor. A first storage capacitor is coupled to the first storage transistor. A second storage transistor coupled to the second terminal of the pixel enable transistor and the gate of the source follower transistor. A second storage capacitor is coupled to the second storage transistor. A row select transistor is coupled to the source follower transistor to generate an output signal from the global shutter readout circuit.

Abstract: The present technique relates to a solid-state imaging device, a solid-state imaging device manufacturing method, and an electronic apparatus that are capable of providing a solid-state imaging device that can prevent generation of RTS noise due to miniaturization of amplifying transistors, and can achieve a smaller size and a higher degree of integration accordingly. A solid-state imaging device includes a photodiode as a photoelectric conversion unit, a transfer gate that reads out charges from the photodiode, a floating diffusion from which the charges of the photodiode are read by an operation of the transfer gate, and an amplifying transistor connected to the floating diffusion. More particularly, the amplifying transistor is of a fully-depleted type. Such an amplifying transistor includes an amplifier gate (gate electrode) extending in a direction perpendicular to convex strips formed by processing a surface layer of a semiconductor layer, for example.

Abstract: The present invention relates to an optoelectronic apparatus, comprising: —an optoelectronic device comprising: —a transport structure (T) comprising a 2-dimensional layer; —a photosensitizing structure (P) to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and—drain (D) and source (S) electrodes electrically connected to the transport structure (T); —a read-out unit to read an electrical signal, generated at a transport channel of the transport structure (T), after an integration time interval tint has passed, and during a taccess that is at least 10 times shorter than tint, wherein tint is longer than a predetermined trapping time ?tr. The present invention also relates to a reading-out method, comprising performing the operations of the read-out unit of the apparatus of the invention, and to the use of the apparatus as a light detector or as an image sensor.

Abstract: To suppress voltage variations due to transistor switching noise in a solid-state image sensor including a transistor that initializes a differentiating circuit. A capacitance supplies a charge corresponding to an amount of variation in a predetermined pixel voltage to a predetermined input terminal. A voltage output unit outputs, as an output voltage, a voltage corresponding to an input voltage at the input terminal from a predetermined output terminal. A reset transistor supplies one of a positive charge or a negative charge during a predetermined period to control the output voltage to an initial value in a case where initialization is instructed. A charge supply unit supplies the other of the positive charge or the negative charge when the predetermined period elapses.

Abstract: An image sensor includes a plurality of pixels that is arranged in a matrix and each of which outputs a signal in response to incident light, wherein readout of data can be performed with respect to the plurality of pixels, and simultaneous readout of data of a plurality of columns of pixels can be performed, and at least one pixel of the plurality of columns of pixels to be read simultaneously can be read for phase detection with respect to each of divided sub-pixels. The image sensor is configured to, with n rows as a readout unit where n is an integer of 2 or more, perform readout for at least one sub-pixel of at least one pixel in one readout cycle within the readout unit, perform readout for each pixel including phase detection readout for the other sub-pixel of the at least one pixel in which the at least one sub-pixel has been read in the one readout cycle, in another readout cycle within the readout unit, and end the readout for the readout unit with the n+1 readout cycles.