Abstract: An object of the present invention is to provide a wiring harness attaching structure aiming at improvement in attaching workability and aiming at thinning of a vehicle door. Provided is a wiring harness attaching structure for attaching a wiring harness to a vehicle interior outer surface of a door trim constituting a vehicle door. The wiring harness is a flat cable whose width dimension is longer than a thickness dimension, is located inside a structure body containing gas phase, and is provided integrally with the structure body containing gas phase. The structure body containing gas phase is attached along the vehicle interior outer surface of the door trim. The wiring harness is attached to the door trim together with the structure body containing gas phase.

Abstract: A power semiconductor device driving circuit has a capacitor whose one end is connected with a first or a second main electrode of a power semiconductor device, a first switch for charging the capacitor and a control electrode of the power semiconductor device with electric charges, and a second switch for discharging electric charges; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through different resistors, electric charges are discharged from the control electrode and the capacitor through one and the same resistor when the second switch turns on; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through one and the same resistor, electric charges are discharged from the control electrode and the capacitor through different resistors when the second switch turns on.

Abstract: A method for fabricating a complementary bipolar junction transistor (BJT) integrated structure. The method includes forming a first backplate in a monolithic substrate below a first buried oxide (BOX) layer. Another forming step forms a second backplate in the monolithic substrate below the first BOX layer. The second backplate is electrically isolated from the first backplate. Another forming step forms an NPN lateral BJT above the first BOX layer and superposing the first backplate. The NPN lateral BJT is configured to conduct electricity horizontally between an NPN emitter and an NPN collector when the NPN lateral BJT is active. Another forming step forms a PNP lateral BJT superposing the second backplate. The PNP lateral BJT is configured to conduct electricity horizontally between a PNP emitter and a PNP collector when the PNP lateral BJT is active.

Abstract: A nanosecond pulser is disclosed. In some embodiments, the nanosecond pulser may include one or more switch circuits including one or more solid state switches, a transformer, and an output. In some embodiments, the transformer may include a first transformer core, a first primary winding wound at least partially around a portion of the first transformer core, and a secondary winding wound at least partially around a portion of the first transformer core. In some embodiments, each of the one or more switch circuits are coupled with at least a portion of the first primary winding. In some embodiments, the output may be electrically coupled with the secondary winding and outputs electrical pulses having a peak voltage greater than about 1 kilovolt and a rise time of less than 150 nanoseconds or less than 50 nanoseconds.

Abstract: A method is disclosed which makes use of an intelligent transfer algorithm for a UPS when the UPS is required to switch from a high efficiency mode of operation (VFD or VI) to an independent mode of operation (VFI), as a result of an under voltage condition occurring on the bypass line of the UPS. The method involves performing successive voltage measurements at a plurality of points during a first half cycle of an AC mains (Vout) signal to integrate the Vout signal until a zero crossing of the Vout signal is detected. Successive voltage measurements are used to detect the disruption of the Vout signal and a percentage of missing voltage area from the Vout signal during the disruption. The UPS then supplies a compensation voltage (Vcomp) which is added to the Vout signal to restore the Vout signal to a level at least approximately equal to a nominal AC mains voltage output signal (Voutnominal).

Abstract: The present invention provides a signal processing method performed by a hybrid wireless power transmitting apparatus which is configured to transmit wireless power signals based on magnetic resonance and magnetic induction, the method comprising transmitting a first object detection signal via an inductive power transmitting unit and a second object detection signal via a magnetic resonant power transmitting unit alternatively; operating one of the inductive power transmitting unit and the magnetic resonant power transmitting unit which is selected based on an inductive response signal and a resonant response signal corresponding to the first object detection signal and the second object detection signal respectively; and transmitting wireless power signal via the selected power transmitting unit; and a hybrid wireless power transmitting apparatus using the method.

Abstract: A home appliance includes a driver to drive a load, a power supply to convert AC power supplied from an outside of the home appliance, and to receive DC power during interruption of electric power, and a controller (1) to perform a control operation to supply first electric power based on the supplied AC power to the load in accordance with a normal operation mode when no interruption of electric power occurs, (2) to perform a control operation to supply second electric power based on the supplied DC power to the load in accordance with the normal operation mode when no interruption of electric power occurs, and (3) to perform a control operation to supply third electric power based on the supplied DC power to the load in accordance with a power saving mode upon the interruption of electric power.

Abstract: An illustrative device includes a first silicon-controlled rectifier (SCR) and a second silicon-controlled rectifier (SCR) connected in anti-parallel and a first commutation module, which includes a first voltage source, a first diode, and a first self-commutating semiconductor switch. The device also includes a second commutation module including a second voltage source, a second diode, and a second self-commutating semiconductor switch. The first voltage source, the first diode, and the first self-commutating semiconductor switch of the first commutation module are connected in series. The second voltage source, the second diode, and the second self-commutating semiconductor switch of the second commutation module are connected in series. The first SCR, the second SCR, the first commutation module, and the second commutation module are connected in parallel. The commutation modules are configured to apply reverse bias voltages to the first and second SCRs to turn off the SCRs.

Abstract: A coil for wireless power transmission in which a plurality of magnetic connection members are disposed in a manner which magnetically connects coils among a plurality of coils, which are adjacent with one or more coils therebetween, and does not magnetically connect coils among the plurality of coils, which are next to each other, and in adjacent coils among the plurality of coils, which are magnetically connected, directions of magnetic fields that are generated when a current flows through the coils are mutually inverse directions.

Abstract: A solar power generation system includes a storage battery, a solar power generation device that is provided on the side of the storage battery and outputs solar generated power, and a power control device. The power control device includes a variation component extraction unit that extracts a shade variation component from a generated power signal measured by the solar power generation device, and a smoothing unit that smoothens the shade variation component obtained by the variation component extraction unit. The power control device obtains a charge/discharge target value of the storage battery on the basis of an output signal from the smoothing unit.

Abstract: A large-power insulated gate switching device (e.g., MOSFET) is used for driving relatively large surges of pulsed power through a load. The switching device has a relatively large gate capacitance which is difficult to quickly discharge. A gate charging and discharging circuit is provided having a bipolar junction transistor (BJT) configured to apply a charging voltage to charge the gate of the switching device where the BJT is configured to also discontinue the application of the charging voltage. An inductive circuit having an inductor is also provided.

Abstract: An integrated circuit and a code generating method are described. The integrated circuit includes a plurality of field effect transistors, a plurality of sense-amplifiers, and a processing circuit. Each field effect transistor is configured to represent an address in a mapping table and includes a source, a drain, a channel and a gate. Each sense-amplifier is connected to the drain and configured to sense an electric current from the drain and identify a threshold voltage of the corresponding field effect transistor. The processing circuit is configured to categorize each of the threshold voltages identified by the corresponding sense-amplifiers into a first state and a second state and mark the state of each of the threshold voltages at the corresponding address in the mapping table.

Abstract: A method for a mobile device in a wireless power system includes transmitting a request to a server of the wireless power system for acquiring operation state information of a first wireless power spot in the wireless power system, wherein the request at least comprises a required power threshold; and receiving a response comprising the operation state information of the first wireless power spot, wherein the operation state information at least comprises a capacity and an availability of the first wireless power spot.

Abstract: A semiconductor device is provided which realizes speed-up and cost reduction. The semiconductor device has a high side gate driver including a depression type FET and an enhancement type FET, a low side gate driver including a depression type FET and an enhancement type FET, and a high side power FET and a low side power FET as field-effect transistors, in which the high side gate driver, the low side gate driver, the high side power FET and the low side power FET are integrated in the same chip.

Abstract: A nanosecond pulser may include a plurality of switch modules, a transformer, and an output. Each of the plurality of switch modules may include one or more solid state switches. The transformer may include a core, at least one primary winding wound around at least a portion of the core, each of the plurality of switch modules may be coupled with the primary windings, and a plurality of secondary windings wound at least partially around a portion of the core. The output may output electrical pulses having a peak voltage greater than about 1 kilovolt and having a pulse width of less than about 1000 nanoseconds. The output may output electrical pulses having a peak voltage greater than about 5 kilovolts, a peak power greater than about 100 kilowatts, a pulse width between 10 nanoseconds and 1000 nanoseconds, a rise time less than about 50 nanoseconds, or some combination thereof.

Abstract: Exemplary embodiments are directed to wireless power transfer including generating an electromagnetic field at a resonant frequency of a transmit antenna to create a coupling-mode region within a near-field of the transmit antenna. A receive antenna placed within the coupling-mode region resonates at or near the resonant frequency. The receive antenna extracts energy from a coupling between the two antennas. Signaling from the receive antenna to the transmit antenna is performed by generating a first power consumption state for the receive antenna to signal a first receive signal state and generating a second power consumption state for the receive antenna to signal a second receive signal state. Signaling from the transmit antenna to the receive antenna is performed by enabling the resonant frequency on the transmit antenna to signal a first transmit signal state and disabling the resonant frequency on the transmit antenna to signal a second transmit signal state.

Abstract: A load control device for controlling the amount of power delivered to an electrical load may include a rectifier circuit configured to receive a phase-control voltage and produce a rectified voltage. A power converter may be configured to receive the rectified voltage at an input and generate a bus voltage. An input capacitor may be coupled across the input of the power converter. The input capacitor may be adapted to charge when the magnitude of the phase control voltage is approximately zero volts. The power converter may be configured to operate in a boost mode, such that the magnitude of the bus voltage is greater than a peak magnitude of the input voltage. The power converter may be configured to operate in a buck mode to charge the input capacitor from the bus voltage when the magnitude of the phase-control voltage is approximately zero volts.

Abstract: Provided is a level shift circuit capable of avoiding breakdown due to level shift operation. The level shift circuit includes: a floating power supply having one end connected to an output terminal; a circuit configured to receive a voltage of the floating power supply, a voltage of a low level power supply and first and second pulse signals from a pulse generating circuit, thereof to output first and second signals; and a logic circuit configured to receive first and second signals, thereby converting a signal that is input to the pulse generating circuit into a signal that fluctuates between a voltage at the one end of the floating power supply and a voltage at the other end thereof to output the converted signal.

Abstract: System, especially for use in aircraft, for controlling at least one switching device (5, 5b, 5n) able to open or close the connection between at least one power source and at least one supplied device, and means for measuring the state of the power supply channel. The system comprises: at least two microcontrollers (1a, 1b) each able to emit a command intended for each switching device (5, 5b, 5n), said microcontrollers (1a, 1b) being connected to at least one portion of the means for measuring the state of the power supply channel; and a means (14, 14b, 14n) for determining the command to be transmitted, able to determine the command to be transmitted to each switching device (5, 5b, 5n) from the commands emitted by each microcontroller (1a, 1b) and intended for said control switch.

Abstract: Disclosed embodiments relate to a driving device of a gate driver driving a semiconductor switching element, which may include a gate driver unit for outputting a control signal to the semiconductor switching element, and a control unit for controlling an operation of the semiconductor switching element by operating at least one gate driver configuring the gate driver unit, wherein the control unit operates at least one gate driver based on a preset operation range of the semiconductor switching element and a detected operation status thereof.