Abstract: An electronic device includes a transmission interface and a control circuit. The transmission interface includes a signal reference contact and a signal transmission contact. The control circuit is electrically coupled between the signal reference contact and a ground layer, in which the control circuit is configured to selectively conduct the signal reference contact and the ground layer, and when the signal reference contact and the ground layer are conducted, the signal transmission contact is configured to transmit a first signal, and when the signal reference contact the ground layer are not conducted, the signal reference contact is configured to transmit a second signal. A transmission frequency of the second signal is less than a transmission frequency of the first signal.

Abstract: Systems, methods, and computer program products for remote configuration of one or more power supplies, particularly lighting power supplies, are disclosed. A configuration signal that includes a setting for a parameter is generated and then transmitted to a power supply. The power supply decodes the configuration signal and, if one or more certain conditions are met, configures the power supply according to information provided in the configuration signal.

Abstract: A retention mode sequential logic circuit has no balloon latch, and all its P-channel transistors are disposed in a single N-well. In one example, the circuit is a retention flip-flop that has an active high retention signal input and an active low reset input. In another example, the circuit is a retention flip-flop that has an active low retention signal input and an active low reset input. In a multi-bit retention register example, one common clock and reset signal generation logic circuit drives multiple pairs of latches. Each retention mode logic circuit described has a low transistor count, is implemented with a single N-well, exhibits low retention mode power consumption, is not responsive to a reset signal in the retention mode, and has a fast response time when coming out of retention mode operation.

Abstract: A module incorporated within a system-on-a-chip operating in a steady-state power supply phase is powered by supplying to the module a regulated power supply voltage obtained from a feedback control loop. The receives a main power supply voltage and a negative feedback voltage. The negative feedback voltage is generated inside the system-on-a-chip starting from an effective supply voltage of the module and from a setpoint signal corresponding to a desired regulated power supply voltage.

Abstract: An RF signal switch circuit that allows connection of any of N radio frequency (RF) input terminals to a switch output port, either in an in-circuit mode or in a bypass mode. Embodiments of the invention allow for both a single switch in the series input path while still having the ability to isolate the bypass path from an input matching network. In both modes, the circuit simultaneously exhibits low input insertion loss (and thus a low noise factor) and high bypass mode isolation.

Abstract: The present disclosure presents a circuit, a method, and a system to drive a half-bridge switch using depletion (D) mode compound semiconductor (III-V) switching transistors for a DC-DC converter using at least one driver to drive the switches of the circuit. Also included is at least one charge pump electrically connected to a gate of the transistor, to maintain a voltage that holds the transistor in an off-state. The circuit includes AC coupling capacitors to level shift a voltage and realize fast transistor switching.

Abstract: A semiconductor device according to an embodiment switches high-frequency signals and includes a semiconductor layer of a first conductivity type. A first layer of a second conductivity type is provided in the semiconductor layer. A second layer of the second conductivity type is provided in the semiconductor layer. A gate dielectric film is provided on the semiconductor layer, the first layer and the second layer. A gate electrode is provided on the gate dielectric film. The gate dielectric film includes a first portion and the semiconductor layer, and a second portion located at both side of the first portion-in a gate length direction of the gate electrode and being thicker than the first portion. At least a part of the second portion is located between the gate electrode and the first layer and between the gate electrode and the second layer.

Abstract: An electronic circuit and methods of operating the electronic circuit are provided. The electronic circuit includes a pull-up transistor for pulling up an input/output (I/O) node of the output circuit to a first voltage and a first isolation transistor for coupling the pull-up transistor to the I/O node. The electronic circuit also includes a pull-down transistor for pulling down the I/O node to a second voltage and a second isolation transistor for coupling the pull-down transistor to the I/O node. In the electronic circuit, the pull-up and the pull-down transistors are transistors supporting a first drain-to-source voltage and a first gate-to-source voltage, while the first and the second isolation transistors are transistors supporting the first drain-to-source voltage and a second gate-to-source voltage greater than the first gate-to-source voltage.

Abstract: A large-power insulated gate switching device (e.g., MOSFET) is used for driving relatively large surges of pulsed power through a load. The switching device has a relatively large gate capacitance which is difficult to quickly discharge. A gate charging and discharging circuit is provided having a bipolar junction transistor (BJT) configured to apply a charging voltage to charge the gate of the switching device where the BJT is configured to also discontinue the application of the charging voltage. An inductive circuit having an inductor is also provided.

Abstract: A primary circuit produces a first on-pulse and a first off-pulse synchronized with a rising edge and a falling edge of an input signal, respectively. A level shift circuit produces a second on-pulse and a second off-pulse formed by shifting the voltage level of the first on-pulse the first off-pulse, respectively. A secondary circuit outputs an output pulse rising and falling in synchronization with the second on-pulse and the second off-pulse, and holds the output when both of the pulses are high. When the reference potential rises, the pulse corresponding to the state of the input signal during the rise of the second potential in the first on-pulse and the first off-pulse is regenerated and one of the second on-pulse and the second off-pulse is thereby made high after the end of the rise of the second reference potential to retransmit the state of the input signal.

Abstract: A device for detecting and correcting timing error and a method for designing typical-case timing using the same is disclosed. The device includes two datapath units connected with first and second multiplexers and two transition detectors. Each datapath unit receives and calculates an input signal to generate a speculation value and a correct value. Then, the speculation value and the correct value are transmitted to the first and second multiplexers and the transition detectors determine whether transition of the outputted speculation value is unstable. If yes, the datapath unit outputting the speculation value is stalled for a period of time for correction, whereby the second multiplexer outputs the correct value. If no, the datapath unit outputs the speculation value, then the present invention uses the undertaken timing as a setting specification to complete a circuit design. The present invention can improve system efficiency and power of the whole circuit.

Abstract: Current sensing through a power semiconductor device with reduced sensitivity to temperature and process variations. An example arrangement includes a power switch coupled between a voltage input and an output voltage terminal supplying current to a load; a first isolation switch coupled between the voltage input and a first node; a comparator amplifier having a pair of differential inputs coupled to the first node and a second node outputting a voltage in response to the difference at the differential inputs; and a first current source coupled between a positive supply voltage and the first node to output a first current responsive to the voltage output from the comparator amplifier; wherein the first current is proportional to the current through the power switch and a ratio of the on resistance of the power switch and the on resistance of the first isolation switch. Methods and additional arrangements are also disclosed.

Abstract: A process information extractor circuit includes: a transistor array including a plurality of transistors, and configured such that, among the plurality of transistors, the number of transistors electrically coupled in series is adjusted depending on a code; a current source suitable for adjusting the amount of current flowing through the transistor array to a predetermined value; a comparator suitable for comparing a gate voltage of the transistors electrically coupled in series in the transistor array, with a reference voltage; and a code generator suitable for generating the code according to a comparison result of the comparator.

Abstract: In accordance with an embodiment, a circuit includes a first and a second switching transistors configured to be coupled in series between a first reference voltage terminal and a transformer. The circuit also includes a first diode coupled between a first drain of the first switching transistor and a first input terminal. The first diode is configured to clamp a voltage of the first drain to a voltage of the first input terminal. The circuit further includes a switching circuit coupled between the second switching transistor and the first input terminal. The switching circuit is configured to connect a second source of the second switching transistor to a second gate of the second switching transistor when a voltage of the second source exceeds the voltage of the first input terminal.

Abstract: The present invention is provided to easily manufacture an IPD as any of a high-side switch and a low-side switch. A level shifting circuit is coupled to an input terminal, a first terminal, and a grounding terminal. Drive power of the level shifting circuit is supplied from the first terminal. An output signal of the level shifting circuit is input to a driver circuit. The driver circuit is coupled to the first terminal and a second terminal. Drive power of the driver circuit is supplied from the first terminal. A transistor has a gate electrode coupled to the driver circuit, a source coupled to the second terminal, and a drain coupled to a third terminal.

Abstract: An example of the invention provides a digital delay unit that is made up of a plurality of NAND gates. The digital delay unit includes a first delay path and a second delay path. The first delay path is coupled between a first input terminal and an output terminal to provide a basic time delay which is caused by one NAND gate. The second delay path is coupled between a second input terminal and the output terminal to provide at least three basic time delays.

Abstract: A circuit for generating a clock signal formed as a hybrid of a multiplying delay-locked loop (MDLL) and a phase locked loop (PLL). In one embodiment a chain of inverting delay multiplexers is connected in a ring configuration capable of operating as a ring oscillator, with a first delay multiplexer in the ring configured to substitute a feed-in clock signal for the feedback clock generated by the ring oscillator when an edge, either rising or falling, is received at the forwarded clock input. The first delay multiplexer may also be configured to interpolate between the phase of the feedback clock and the phase of the feed-in clock. The interpolation may be based on transistor channel widths and the value of a control signal, and results in behavior intermediate to that of an MDLL and that of a PLL.

Abstract: A bidirectional power switch includes first and second thyristors connected in antiparallel between first and second conduction terminals of the switch. The first thyristor is of an anode-gate thyristor, and the second thyristor is of a cathode-gate thyristor. The gates of the first and second thyristors are coupled to a same control terminal of the switch by respective dipole circuits. At least one of the dipole circuits is formed by at least one diode or at least one resistor.

Abstract: An integrated circuit includes: a latch unit suitable for inverting a voltage level of a first node and driving a second node with the inverted voltage level of the first node, and inverting a voltage level of the second node and driving the first node with the inverted voltage level of the second node; and a sink unit coupled with one or more among the first and second nodes, and suitable for sinking a charge of the coupled node.

Abstract: A method of setting a supply voltage in a device is disclosed. The method includes receiving a first plurality of inputs from a plurality of sensors that are representative of a gate delay of a signal path on the device, and receiving a second plurality of inputs from a plurality of temperature sensors. The method further includes estimating a plurality of interconnect delays for the signal path based on the second plurality of inputs, and determining the supply voltage for the signal path based on the first plurality of inputs and the plurality of interconnect delays.