Patents Examined by Michael Carter
  • Patent number: 11411370
    Abstract: A Cu—Si—Cu substrate having a silicon substrate, copper plating on opposite sides of the silicon substrate, and copper vias extending thru the silicon substrate to electrically and thermally connect the copper platings together. The thicknesses of the silicon substrate and the copper platings are selected so that a coefficient of thermal expansion (CTE) of the Cu—Si—Cu substrate is substantially the same as a CTE of a material to be mounted on the Cu—Si—Cu substrate.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: August 9, 2022
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: Susant Patra, Robert J. Deri, John W. Elmer
  • Patent number: 11411375
    Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: August 9, 2022
    Assignee: OSRAM OLED GMBH
    Inventors: Alfred Lell, Muhammad Ali, Bernhard Stojetz, Harald Koenig
  • Patent number: 11411371
    Abstract: In a first embodiment, an external cavity tunable laser, comprising a silicon photonics circuit comprising one or more resonators having one or more p-i-n junctions; wherein a voltage is applied to one or more of the p-i-n junctions. In a second embodiment, a method of operating an external cavity tunable laser, comprising sweeping out free-carriers from a resonator of the tunable laser by applying a voltage to a p-i-n junction of a waveguide of the resonator.
    Type: Grant
    Filed: July 13, 2020
    Date of Patent: August 9, 2022
    Assignee: Acacia Communications, Inc.
    Inventors: Christopher Doerr, Li Chen, Long Chen
  • Patent number: 11404840
    Abstract: A device and a method for measuring thermal load caused by excited state absorption in laser gain crystal are disclosed. Thermal focal lengths on the tangential and sagittal planes of the laser gain crystal are obtained by obtaining the threshold when the pump power is decreased, the optimal operating point, and cavity parameters of the single-frequency laser. Individual ABCD matrices of the laser gain crystal on the tangential plane and the sagittal plane are obtained based on thermal focal length.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: August 2, 2022
    Assignee: SHANXI UNIVERSITY
    Inventors: Jing Su, Huiqi Yang, Huadong Lu, Kunchi Peng
  • Patent number: 11391562
    Abstract: A fiber optic voltage conditioner, and method therefor, generally relate to voltage conditioning. In such a fiber optic voltage conditioner, there is a laser, and an optical circulator is coupled to receive a light signal from the laser. A controller is coupled to the laser and is configured to generate first control information for wavelength-drift control of the laser. A data acquisition module is coupled to the controller and is configured to generate second control information for the controller for adjustment of the first control information. A photodetector is coupled to the optical circulator to receive a returned optical signal and is coupled to the data acquisition module to provide an analog output signal thereto. The photodetector is configured to generate the analog output signal responsive to the returned optical signal. The data acquisition module is configured to generate the second control information using the analog output signal.
    Type: Grant
    Filed: February 20, 2020
    Date of Patent: July 19, 2022
    Assignee: iSenseCloud, Inc.
    Inventors: An-Dien Nguyen, An H. Nguyen
  • Patent number: 11387629
    Abstract: An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.
    Type: Grant
    Filed: June 16, 2020
    Date of Patent: July 12, 2022
    Assignee: KYOCERA SLD Laser, Inc.
    Inventors: James W. Raring, Melvin McLaurin, Paul Rudy, Po Shan Hsu, Alexander Sztein
  • Patent number: 11387622
    Abstract: A fiber laser system based in solitonic passive mode-locking, including a laser diode to emit and deliver an optical signal of a first wavelength; a single-fiber laser cavity including a dichroic mirror, a SESAM and a polarization maintaining highly-doped active fiber, to receive the emitted signal and to emit a pulsed optical signal of a second wavelength, generating laser light in the form of mode-locked ultrashort pulses; a unit coupling the laser diode to the single-fiber laser cavity; and an isolator device protecting the cavity from back reflections. The solitonic mode-locked ultrashort pulses are comprised in a range of 100 fs<10 ps with repetition rates of hundreds MHz to tens of GHz.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: July 12, 2022
    Assignee: FYLA LASER, S. L.
    Inventors: Pere Pérez Millán, Javier Abreu Afonso, Salvador Torres Peiró, Viorel Otgon, Héctor Muñoz Marco
  • Patent number: 11387625
    Abstract: A pulsed signal generator generates a pulsed signal having a pulse width intended to be equal to a given fraction of a pulse width of a reference clock. A reference current source outputs current having a reference magnitude, and a comparison current source outputs current having a magnitude that is a function of the reference magnitude and the given fraction. A comparison circuit compares a total current output by one of the reference current source and the comparison current source during pulses of the reference clock to a total current output by the other of the reference current source and the comparison current source during pulses of the pulsed signal equal in number to the pulses of the reference clock in order to determine whether the pulse width of the pulse signal is less than or equal to the given fraction of the pulse width of the reference clock.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: July 12, 2022
    Assignee: STMicroelectronics S.r.l.
    Inventors: Marco Zamprogno, Alireza Tajfar
  • Patent number: 11387621
    Abstract: A sensing method for in-situ non-perturbing measurement of characteristics of laser beams at the exit of the laser beam delivery fiber tips include measuring power of a laser beam transmitted through delivery fiber tip in fiber-optics systems. A sensing devices for in-situ non-perturbing sensing and control of multiple characteristics of laser light transmitted through light delivery fiber tips includes a fiber-tip coupler comprised of a shell with enclosed delivery fiber having a specially designed angle-cleaved endcap and one or several tap fibers that are specially arranged and assembled at back side of the endcap and other variations. Methods and system architectures for in-situ non-perturbing control of characteristics of laser beams at the exit of the laser beam delivery fiber tips include fiber-tip couplers and sensing modules that receive laser light from tap fibers, and systems for optical processing to enhance light characteristics suitable for in-situ measurement.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: July 12, 2022
    Assignee: II-VI DELAWARE, INC.
    Inventors: Mikhail Vorontsov, Vladimir Ovchinnikov
  • Patent number: 11381052
    Abstract: A laser device is provided that includes an element made of laser-active material and a cladding element bonded to the element so as to allow heat exchange by heat conduction between the cladding element and the element. The laser-active material emitting laser light when excited by pump light. The element being made of a glass. The cladding element being made of a material that exhibits an absorption coefficient for the pump light that is lower than a corresponding absorption coefficient of the glass. The element and cladding element being configured so that the pump light can be directed through the cladding element into the element and/or so that the pump light can be directed through the element into the cladding element.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: July 5, 2022
    Assignee: SCHOTT AG
    Inventor: Dirk Apitz
  • Patent number: 11381055
    Abstract: A laser system includes: a laser light source; a light detector configured to output an electric current proportional to an output laser light of the laser light source; a resistor network configured to convert the electric current output from the light detector to a monitor voltage; and a regulator configured to control an intensity of the output laser light based on a comparison between the monitor voltage and a voltage corresponding to a control target value, wherein the resistor network comprises at least two branch circuits connected in parallel with each other, and the branch circuits include respective digital potentiometer circuits commonly formed in a single device.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: July 5, 2022
    Assignee: KYOCERA SOC CORPORATION
    Inventor: Minoru Kadoya
  • Patent number: 11374378
    Abstract: The present disclosure relates to an optical waveguide system. The system has a first waveguide having a core-guide and a cladding material portion surrounding and encasing the core-guide to form a substantially D-shaped cross sectional profile with an exposed flat section running along a length thereof. The core-guide enables a core-guide mode for an optical pulse signal having a first characteristic, travelling through the core-guide. A material layer of non-linear material is used which forms a second waveguide. The material layer is disposed on the exposed flat section of the cladding material portion. The material layer forms a plasmonic device to achieve a desired coupling with the core-guide to couple optical energy travelling through the core-guide into the material layer to modify the optical energy travelling through the core-guide such that the optical energy travelling through the core-guide has a second characteristic different from the first characteristic.
    Type: Grant
    Filed: August 21, 2020
    Date of Patent: June 28, 2022
    Assignees: Lawrence Livermore National Security, LLC, Board of Visitors of Norfolk State University
    Inventors: Eyal Feigenbaum, Graham S. Allen, Jay W. Dawson, Mikhail A. Noginov
  • Patent number: 11367998
    Abstract: A method for preparing an erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature. The method comprising the following steps: (a) doping a single crystalline silicon wafer with erbium ion implantation or co-doping the single crystalline silicon wafer with erbium ion and oxygen ion implantation simultaneously to obtain an Er- or Er/O-doped silicon wafer, wherein the single crystalline silicon wafer is a silicon wafer with a germanium epitaxial layer, or an SOI silicon wafer with silicon on an insulating layer or other silicon-based wafers; and (b) subjecting the Er- or Er/O-doped silicon wafer to a deep-cooling annealing treatment, the deep-cooling annealing treatment includes a temperature increasing process and a rapid cooling process.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: June 21, 2022
    Assignee: Shanghai Jiao Tong University
    Inventors: Yaping Dan, Huimin Wen, Jiajing He
  • Patent number: 11367991
    Abstract: A device for generating laser radiation comprises a temperature-controlled optical setup comprising an optically non-linear solid state medium arranged in a resonator and an active region. The outgoing laser radiation is generated from a pump beam introduced into the optically non-linear solid state medium. A first temperature actuator and a second temperature actuator configured to independently adjust temperature values in the active region of the optically non-linear solid state medium. The first temperature actuator is configured regulate a length of the resonator by setting a first temperature value within a first portion of the active region. The second temperature actuator is configured to match phases of wavelengths generated by the outgoing laser radiation and phases of wavelengths of the pump beam radiation by setting a second temperature value within a second portion of the active region.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: June 21, 2022
    Assignee: Universität Hamburg
    Inventors: Roman Schnabel, Axel Schönbeck, Sebastian Steinlechner
  • Patent number: 11361996
    Abstract: A spectral interference height detecting apparatus includes a chuck table for holding a workpiece thereon and a height detecting unit for detecting the height of an upper surface of the workpiece held on the chuck table. The height detecting unit includes a light source for emitting light in a predetermined wavelength band into a first optical path, a condenser disposed in the first optical path for converging light onto the workpiece held on the chuck table, a beam splitter disposed between the light source and the condenser for splitting the light in the first optical path into a second optical path, a mirror disposed in the second optical path to form a basic optical path length, for reflecting light into the second optical path and returning light through the beam splitter to the first optical path.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: June 14, 2022
    Assignee: DISCO CORPORATION
    Inventors: Keiji Nomaru, Taiki Sawabe, Nobuyuki Kimura
  • Patent number: 11362480
    Abstract: Systems and methods for a self-injection locked SBS laser are provided herein. In certain embodiments, a system includes a pump laser source providing a pump laser; an SBS resonator receiving the pump laser through a first port and scattering some of the pump laser to provide an SBS laser through the first port, wherein a frequency shift of Brillouin scattering within the SBS resonator is an integer multiple of a free-spectral range for the SBS resonator; a filter receiving the pump laser on a first filter port and the SBS laser on a second filter port, wherein the pump laser is output through the second filter port and the SBS laser is output through a drop port; and a pump laser path coupling the output pump laser into the pump laser source, wherein a frequency of the pump laser becomes locked to a resonance frequency of the SBS resonator.
    Type: Grant
    Filed: June 3, 2020
    Date of Patent: June 14, 2022
    Assignee: Honeywell International Inc.
    Inventors: Matthew Wade Puckett, Karl D. Nelson, Jianfeng Wu
  • Patent number: 11362089
    Abstract: Semiconductor structures and method for forming the same are provided. The method for manufacturing the semiconductor structure includes forming a first gate dielectric layer over a substrate and forming a first capping layer over the first gate dielectric layer. The method for manufacturing the semiconductor structure includes oxidizing the first capping layer to form a first capping oxide layer and forming a first work function metal layer over the first capping oxide layer. The method for manufacturing the semiconductor structure includes forming a first gate electrode layer over the first work function metal layer.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: June 14, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Wei Lin, Chih-Lin Wang, Kang-Min Kuo, Cheng-Wei Lian
  • Patent number: 11349280
    Abstract: A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. A blanket dielectric layer is situated over the patterned group III-V device. A contact metal is situated within the blanket dielectric layer and an interconnect metal is situated over the blanket dielectric layer. The blanket dielectric layer can be substantially planar. The contact metal and the interconnect metal can be electrically connected to the patterned group III-V device. The patterned group III-V device can be optically and/or electrically connected to group IV devices in the group IV substrate.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: May 31, 2022
    Assignee: Newport Fab, LLC
    Inventors: Edward Preisler, Oleg Martynov
  • Patent number: 11349276
    Abstract: The system and method of using an ultra-short pulse mid and long wave infrared laser. The system is seeded with a 2 ?m laser source having a pulse duration in the femtosecond range. The beam is stretched, to increase the pulse duration, and the beam is amplified, to increase an energy level of the laser beam. Both mid wave IR and long wave IR seed beams are first generated, and then amplified via one or more optical parametric chirped-pulse amplification stages. A compressor may be used to compress one or more of the output beams to achieve high peak power and controllable pulse duration in the output beams. The output beams may then be used to create atmospheric or material effects at km range.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: May 31, 2022
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Peter A. Budni, Alan R. Enman, Yannick C. Morel
  • Patent number: 11349279
    Abstract: A semiconductor device comprising a waveguide having a core, said core having inserted therein one or more layers of nanoemitters.
    Type: Grant
    Filed: January 28, 2020
    Date of Patent: May 31, 2022
    Assignee: UNM Rainforest Innovations
    Inventors: Marek Osinski, Alexander Neumann, Gennady A. Smolyakov