Patents Examined by Michael Carter
  • Patent number: 10461505
    Abstract: Laser diodes formed on a common substrate with layers of suitable thickness and refractive indices produce output beams that are coherently coupled. A phase mask can be situated to produce phase differences in one or more of the output beams to produce a common wavefront phase. The phase-corrected beams propagate with reduced angular divergence than conventional lasers that are not coherently coupled, and the coherently coupled laser diodes can provide higher beam brightness, enhanced beam parameter product, and superior power coupled into doped fibers in fiber lasers.
    Type: Grant
    Filed: April 4, 2017
    Date of Patent: October 29, 2019
    Assignee: nLIGHT, Inc.
    Inventors: Zhigang Chen, Manoj Kanskar
  • Patent number: 10461498
    Abstract: A method for biasing a tunable laser during burst-on and burst-off states through a common-cathode laser driving circuit includes delivering a bias current to an anode of a gain-section diode having a shared substrate with the laser, and receiving a burst mode signal indicative of a burst-on state or a burst-off state. When the burst mode signal is indicative of the burst-off state, the method includes sinking a sink current away from the anode of the gain-section diode. The sink current is less than the bias current delivered to the anode of the gain-section diode. When the burst mode signal transitions to be indicative of the burst-on state from the burst-off state, the method includes ceasing the sinking of the sink current away from the anode of the gain-section diode, and delivering an overshoot current to the anode of the gain-section diode to accelerate heating of the gain-section diode.
    Type: Grant
    Filed: October 1, 2018
    Date of Patent: October 29, 2019
    Assignee: Google LLC
    Inventors: Tao Zhang, Liang Du, Xiangjun Zhao, Changhong Joy Jiang, Cedric Fung Lam, Shuang Yin, Adam Edwin Taylor Barratt
  • Patent number: 10454249
    Abstract: In a semiconductor laser device, a n-type cladding layer, a multi-quantum well active layer, and a p-type cladding layer are sequentially laminated on an n-type substrate, and a stripe structure is provided on this semiconductor laminated section. The n-type cladding layer has a first n-type cladding layer configured of Alx1Ga1-x1As (0.4<x1?1), and a second n-type cladding layer configured of (Alx2Ga1-x2)1-y2Iny2P (0?x2?1, 0.45?y2?0.55). The p-type cladding layer is configured of (Alx3Ga1-x3)1-y3Iny3P (0?x3?1, 0.45?y3?0.55). The width of the stripe structure is 10 ?m or more, and the refractive index with respect to the laser oscillation wavelength of the first n-type cladding layer is less than or equal to the refractive index with respect to the laser oscillation wavelength of the second n-type cladding layer.
    Type: Grant
    Filed: September 29, 2018
    Date of Patent: October 22, 2019
    Assignee: SHARP KABUSHIKI KAISHA
    Inventor: Tomoya Inoue
  • Patent number: 10447013
    Abstract: A high-power packaged laser array that is thermal reflow compatible is described. Notably, a high-power III-V laser array is integrated on a silicon substrate with a matching array of ball lenses, an isolator and a coupler (such as a reflective layer) to achieve an edge-coupled or a surface-normal output laser array. In some embodiments, an isolator with a permanent magnet is used to preserve the magnetic domain or state of the isolator during the thermal reflow(s), which can involve temperatures up to 250 C. In order to relax the misalignment tolerance when integrating with the silicon chip, a laser array with a larger optical mode may be used to increase the output beam size. Moreover, a III-V laser array with an angled output optical waveguide can be used to improve the stability of the lasers at high power.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: October 15, 2019
    Assignee: Axalume, Inc.
    Inventors: Xuezhe Zheng, John E. Cunningham, Ashok V. Krishnamoorthy
  • Patent number: 10446457
    Abstract: The present invention provides a semiconductor substrate (105, 105a) comprising two or more layers of built-up structural layers (120, 220) formed on a sacrificial carrier (110). Each built-up structural layer, comprising a conductor trace layer (114a,) and an interconnect (118a, 218a), is molded in a resin molding compound. A top surface of the molded compound is abrasively ground and then deposited with an adhesion layer (123, 124, 224). A multi-layer substrate (105, 105a) is then obtained after an outermost conductor trace layer (128a, 228a) is formed on the adhesion layer and the carrier (110) or reinforcing ring (110b) is removed.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: October 15, 2019
    Assignee: Advanpack Solutions Pte Ltd
    Inventors: Shoa Siong Lim, Hwee Seng Chew
  • Patent number: 10438968
    Abstract: Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: October 8, 2019
    Assignee: Micron Technology, Inc.
    Inventors: John M. Meldrin, Yushi Hu, Rita J. Klein, John D. Hopkins, Hongbin Zhu, Gordon A. Haller, Luan C. Tran
  • Patent number: 10424897
    Abstract: A semiconductor laser device includes a heat sink, a submount, a first electrode, an insulating layer, a semiconductor laser element, a connecting portion, and a second electrode. The submount is conductive and on a first region of an upper surface of the heat sink. The first electrode is conductive and on a second region, different from the first region, of the upper surface of the heat sink. The first electrode is electrically connected either to at least part of a side surface of the submount or to an upper surface of the submount.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: September 24, 2019
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Naoto Ueda, Kouji Oomori, Takayuki Yoshida
  • Patent number: 10418781
    Abstract: An edge-emitting laser diode is formed to include a quantum well passivation structure comprising alternating thin layers of a semiconductor material (e.g., silicon, germanium, or antimony) and a dielectric barrier. The semiconductor layers are sufficiently thin to form quantum wells, with the dielectric layers functioning as barriers between adjacent quantum wells. The semiconductor layer adjacent to the facet is formed of crystalline material, with the remaining quantum wells formed of amorphous material. The structure, and the method of forming the structure, results in a configuration that exhibits higher levels of COD than devices using a bulk (thick) silicon passivation layer.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: September 17, 2019
    Assignee: II-VI Delaware, Inc.
    Inventor: Abram Jakubowicz
  • Patent number: 10418780
    Abstract: A dot projector with automatic power control includes a housing covering a substrate with an installing space and a platform therein, an automatic power control integrated circuit, a photodiode and a reflector disposed under the platform of the housing, a collimator disposed in the installing space of the housing and a diffractive optical element bonded on the platform of the housing. Whereby a laser diode emits a laser light to the reflector for the laser light to be reflected perpendicularly through the collimator to the diffractive optical element; then the diffractive optical element produces a plurality of light spots and the a stray light is also produced from the laser light. The photodiode of the automatic power control integrated circuit then detects the stray light and produces a feedback signal transmitted back to the laser diode for adjustment of the laser emission power in order to control the light spots produced by the diffractive optical element.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: September 17, 2019
    Assignee: Arima Lasers Corp.
    Inventors: Jung-Min Hwang, Chia-Hung Hsieh, Chun-Ting Lin, Ming-Cho Wu, Ming-Hui Fang
  • Patent number: 10418783
    Abstract: An optical and electronic feedback system can be used to significantly narrow the linewidth of distributed Bragg reflector lasers (DBRs) by reducing the high-frequency noise in the laser spectrum. An optical feedback path reduces the high-frequency noise of the laser. An electric-optic modulator placed inside of this feedback path applies electronic feedback with a very large bandwidth, allowing for robust and stable locking to a reference cavity. In addition, the servo-electronic component greatly increases the long-term stability of the laser locking to an external reference cavity, allowing for low noise, long-term operation of the laser. Specifically, it suppresses the frequency noise spectral density and narrows the total linewidth from a free-running value of 100 kHz to 30 Hz. The resulting modified DBR laser is both precise and stable and has applications in optical clocks, quantum information science, and precision metrology.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: September 17, 2019
    Assignee: Massachusetts Institute of Technology
    Inventors: Vladan Vuletic, Boris Braverman, Akio Kawasaki, Megan Yamoah, Edwin Eduardo Pedrozo Penafiel
  • Patent number: 10404037
    Abstract: A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: September 3, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Akira Higuchi, Yoshitaka Kurosaka, Tadataka Edamura, Masahiro Hitaka
  • Patent number: 10403804
    Abstract: LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: September 3, 2019
    Assignees: EPISTAR CORPORATION, IMEC TAIWAN CO.
    Inventors: Guan Ru He, Jui-Hung Yeh, Kevin T. Y. Huang, Chih Chung Chen
  • Patent number: 10389083
    Abstract: A modulated light source includes a reflective semiconductor optical amplifier including a mirror at a first end of the reflective semiconductor optical amplifier, a modulator configured to modulate a central wavelength, a first mirror configured to reflect light transmitted by the modulator, an optical filter disposed between a second end of the reflective semiconductor optical amplifier and the modulator, and a second mirror configured to reflect part of incoming light and to transmit the other part of the incoming light. The reflective semiconductor optical amplifier, the optical filter, and the second mirror configure a Fabry-Perot laser. The first mirror is configured to feed light emitted from the Fabry-Perot laser back to the Fabry-Perot laser, and the modulated light source is configured to select light corresponding to one of longitudinal modes oscillated by the Fabry-Perot laser, to modulate the selected light, and to output the modulated light.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: August 20, 2019
    Assignees: FUJITSU LIMITED, PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION
    Inventor: Tomoyuki Akiyama
  • Patent number: 10378884
    Abstract: A fiber optic voltage conditioner, and method therefor, generally relate to voltage conditioning. In such a fiber optic voltage conditioner, there is a laser, and an optical circulator is coupled to receive a light signal from the laser. A controller is coupled to the laser and is configured to generate first control information for wavelength-drift control of the laser. A data acquisition module is coupled to the controller and is configured to generate second control information for the controller for adjustment of the first control information. A photodetector is coupled to the optical circulator to receive a returned optical signal and is coupled to the data acquisition module to provide an analog output signal thereto. The photodetector is configured to generate the analog output signal responsive to the returned optical signal. The data acquisition module is configured to generate the second control information using the analog output signal.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: August 13, 2019
    Assignee: iSenseCloud, Inc.
    Inventors: An-Dien Nguyen, An H. Nguyen
  • Patent number: 10381798
    Abstract: Provided are a hybrid photon device including an etch stop layer and a method of manufacturing the hybrid photon device. The hybrid photon device includes: a silicon substrate including a waveguide on a surface thereof; a front etch stop layer and a rear etch stop layer disposed on a surface of the waveguide, the front and rear etch stop layers formed respectively to either side of the first region in a length direction of the waveguide; and a group III/V light-emitting unit generating light on a region of the silicon substrate between the front and rear etch stop layers.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: August 13, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dongsik Shim, Byunggil Jeong, Byounglyong Choi
  • Patent number: 10381795
    Abstract: The present invention relates to a microdisk laser having characteristics of unidirectional emission and an ultra-high quality factor and also a microdisk laser composed of four circular arcs and configured to emit light in one direction in a resonance mode having the form of a whispering gallery mode formed by total reflection.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: August 13, 2019
    Assignee: Daegu Gyeongbuk Institute of Science and Technology
    Inventor: Chil Min Kim
  • Patent number: 10374384
    Abstract: A laser feedback control system includes a laser operable to emit a laser beam. The control system further includes a prism mirror which includes a first reflective surface. The first reflective surface is oriented to reflect the laser beam at a first angle to a first direction of travel of the laser beam. The control system further includes a sampling mirror, the sampling mirror partially reflective and oriented such that the laser beam reflected at the first angle by the first reflective surface encounters the sampling mirror at a polarization insensitive angle of incidence. The control system further includes a detector positioned to detect a portion of the laser beam transmitted through the sampling mirror.
    Type: Grant
    Filed: July 19, 2016
    Date of Patent: August 6, 2019
    Assignee: AFL Telecommunications LLC
    Inventors: Mohamed Amine Jebali, Ryo Hasehawa
  • Patent number: 10367332
    Abstract: An edge emitting laser light source and a three-dimensional (3D) image obtaining apparatus including the edge emitting laser light source are provided. The edge emitting laser light source includes a substrate; an active layer disposed on the substrate; a wavelength selection section comprising grating regions configured to select wavelengths of light emitted from the active layer; and a gain section configured to resonate the light having the selected wavelengths in a direction parallel with the active layer.
    Type: Grant
    Filed: October 7, 2016
    Date of Patent: July 30, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Changyoung Park, Byunghoon Na, Yonghwa Park
  • Patent number: 10355453
    Abstract: A device may include a substrate and an active region. This active region may include a stack of semiconductor gain materials stacked along a stacking direction. The latter may extend substantially perpendicular to a plane of the substrate. The active region may be furthermore tapered so as to widen toward the substrate. In addition, the device may include a pair of doped layers semiconductor materials, the pair may include an n-doped layer and a p-doped layer arranged on the substrate and on opposite. The doped layers may be arranged on the substrate and on opposite, lateral sides of the tapered active region, respectively. The device may include an electron blocking layer, which may extend both at a first interface, between a p-doped layer and the substrate, and at a second interface, between the tapered active region and the p-doped layer, along a lateral side of the tapered active region.
    Type: Grant
    Filed: November 8, 2017
    Date of Patent: July 16, 2019
    Assignee: International Business Machines Corporation
    Inventors: Herwig Hahn, Charles Caƫr
  • Patent number: 10355446
    Abstract: A method for controlling an electromagnetic radiation source to produce single mode operation having an optimized side-mode suppression ratio over a set of wavelengths within a prescribed temporal profile. The electromagnetic radiation source is configured to output electromagnetic radiation at a given wavelength based upon parameters. The method includes determining a set of parameter combinations that satisfy a condition for a desired set of wavelengths and a minimum side mode suppression ratio over the range of wavelengths. The set of parameter combinations define sub-paths for nearly arbitrary transitions from one wavelength to another wavelength. Combinations of select sub-paths provide a multivariate path for transitioning over the range of wavelengths. The method also includes controlling the semiconductor laser to emit electromagnetic radiation over the range of wavelengths by traversing the multivariate path in a desired manner.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: July 16, 2019
    Assignee: INSIGHT PHOTONIC SOLUTIONS, INC.
    Inventors: Jason Ensher, Christopher Wood, Michael Minneman