Patents Examined by Michael Carter
  • Patent number: 10840667
    Abstract: A method and a system for laser pulse wavefront correction and focusing optimization for laser Wakefield interaction to accelerate electrons to high energy, and more generally for laser matter interaction where both far field and intermediate field optimization are important, allowing a robust wavefront correction and focusing optimization with a high-power laser system at its nominal laser pulse energy and laser pulse duration. The method comprises, after laser beam focusing by focusing optics, coupling an imaging unit to a wavefront sensor, thereby measuring the laser beam wavefront, and adjusting the measured laser beam wavefront to converge to a reference wavefront of the imaging unit using a spatial phase-modifying device.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: November 17, 2020
    Assignee: INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Sylvain Fourmaux, Stéphane Payeur, Jean-Claude Kieffer
  • Patent number: 10840673
    Abstract: An electrically pumped surface-emitting photonic crystal laser has a second surface of a first metal electrode arranged on a photonic crystal structure, a first electrical currents confining structure and a filled layer, and a substrate having a top surface arranged on a first surface of the first metal electrode for the photonic crystal structure to be inversely disposed. The photonic crystal laser has its epitaxy structure etched from above to fabricate the photonic crystal to allow laser beams to be reflected by the first metal electrode due to the inverse disposition and to be emitted from a rear surface of the epitaxy structure.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: November 17, 2020
    Assignee: Conary Enterprise Co., Ltd.
    Inventors: Kuo-Jui Lin, Yu-Chen Chen
  • Patent number: 10840674
    Abstract: A diode laser comprises an n-type first cladding layer, an n-type first waveguide layer arranged on the first cladding layer, an active layer suitable for radiation generation and arranged on the first waveguide layer, a p-type second waveguide layer arranged on the active layer, a p-type second cladding layer which is arranged on the second waveguide layer, an n-type first intermediate layer being formed as a transition region between the first waveguide layer and the active layer, and a p-type second intermediate layer being formed as a transition region between the second waveguide layer and the active layer. The diode laser according to the invention is characterized in that the asymmetry ratio of the thickness of the first intermediate layer to the sum of the thickness of the first intermediate layer and the thickness of the second intermediate layer is less than or greater than 0.5.
    Type: Grant
    Filed: January 25, 2018
    Date of Patent: November 17, 2020
    Assignee: FORSCHUNGSVERBUND BERLIN E.V.
    Inventors: Thorben Kaul, Götz Erbert, Paul Crump
  • Patent number: 10833483
    Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a plurality of VCSELs, a plurality of structures extending from a surface of the VCSEL array, and one or more metallization layers electrically connecting to one or more VCSELs of the plurality of VCSELs. The one or more metallization layers may include portions over the plurality of structures. The portions over the plurality of structures may extend to a height that is greater than other features on the surface of the VCSEL array. When the VCSEL array is on a submount, the plurality of structures may mechanically support the VCSEL array and to prevent the other features on the surface of the VCSEL array from contacting the submount.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: November 10, 2020
    Assignee: Lumentum Operations LLC
    Inventor: Albert Yuen
  • Patent number: 10819084
    Abstract: The present disclosure provides a TO-CAN packaged laser and an optical module. According to an example, the TO-CAN packaged laser includes a base; a substrate located on the base, where the substrate is provided with a first conductive sheet and a second conductive sheet; a laser chip provided on the substrate, where an anode of the laser chip is electrically coupled with the first conductive sheet and a cathode of the laser chip is electrically coupled with the second conductive sheet; and a first pin and a second pin that protrude from the base, where the first pin is coupled with the first conductive sheet by conductive welding flux or conductive paste and the second pin is coupled with the second conductive sheet by conductive welding flux or conductive paste.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: October 27, 2020
    Assignee: HISENSE BROADBAND MULTIMEDIA TECHNOLOGIES CO., LTD.
    Inventor: Lingyan Zhang
  • Patent number: 10819083
    Abstract: A vertical cavity surface-emitting laser including: a substrate having a main surface; and a post structure mounted on the main surface. The post structure includes an active layer and a carrier confinement structure. The carrier confinement structure includes a first region and a second region having a higher resistivity than the first region. The first region has an edge, and a first to a third reference line segments. A first length of the first reference line segment is longest among lengths of line segments joining any two points on the edge and extending in a direction of the III-V group semiconductor. The first length is greater than a sum of a second length of the second reference line segment and a third length of the third reference line segment. The third length is smaller than the second length and is zero or more.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: October 27, 2020
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yutaka Onishi, Hiroyuki Yoshinaga, Rei Tanaka
  • Patent number: 10819081
    Abstract: Disclosed is a system and method for remote sensing, surface profiling, object identification, and aiming based on two-photon population inversion and subsequent photon backscattering enhanced by superradiance using two co-propagating pump waves. The present disclosure enables efficient and highly-directional photon backscattering by generating the pump waves in properly pulsed time-frequency modes, proper spatial modes, with proper group-velocity difference in air. The pump waves are relatively delayed in a tunable pulse delay device and launched to free space along a desirable direction using a laser-pointing device. When the pump waves overlap in air, signal photons will be created through two-photon driven superradiant backscattering if target gas molecules are present. The backscattered signal photons propagate back, picked using optical filters, and detected.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: October 27, 2020
    Assignee: THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY
    Inventor: Yuping Huang
  • Patent number: 10811835
    Abstract: A laser frame for holding a plurality of optical components includes a first flexure structure for adjustably holding a first one of the optical components, and a first cellular structure for supporting and cooling a second one of the optical components. The first flexure structure and the first cellular structure are each a unitary structure formed by additive manufacturing. Also, a laser frame for holding an optical component includes a passive cooling cellular structure for supporting and cooling the optical component. The passive cooling cellular structure has a non-uniform density, and the laser frame is a unitary structure formed by additive manufacturing.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: October 20, 2020
    Assignee: University of Pittsburgh-Of the Commonwealth System of Higher Education
    Inventors: Peng Kevin Chen, Shuo Li, Albert Chi Fu To
  • Patent number: 10790631
    Abstract: The present invention demonstrates a technique for achieving milli-joule level and higher energy, broad bandwidth laser pulses centered around 2.4 micrometer with a kilohertz and other repetition rate. The key to such technique is to start with a broadband micro-joule level seed laser at around 2.4 micrometer, which could be generated through difference frequency generation, four-wave mixing process and other methods. This micro-joule level seed laser could then be amplified to above one milli-joule through chirped pulse amplification in a Cr2+:ZnSe or Cr2+:ZnS crystal pumped by a commercially available Ho:YAG or other appropriate suitable lasers. Due to the high seed energy, fewer gain passes are needed to achieve a milli-joule level output thus significantly simplifies laser architectures. Furthermore, gain narrowing effect in a typical chirped pulse amplifier is also mitigated and thus enable a broadband output.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: September 29, 2020
    Assignee: University of Central Florida Research Foundation, Inc.
    Inventors: Zenghu Chang, Xiaoming Ren, Yanchun Yin, Lam Mach
  • Patent number: 10770861
    Abstract: A light-emitting device having a self-cooled semiconductor laser having a laser cavity.
    Type: Grant
    Filed: May 15, 2019
    Date of Patent: September 8, 2020
    Assignee: UNM Rainforest Innovations
    Inventors: Marek Osinski, Gennady A. Smolyakov
  • Patent number: 10770865
    Abstract: An edge-emitting laser including a substrate, a lower power optical cavity located on the substrate and a higher power optical cavity located on the substrate adjacent the lower power optical cavity. The lower power optical cavity includes a first active gain section having a first length. The higher power optical cavity includes a second active gain section having a second length greater than the first length.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: September 8, 2020
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Shiva Shahin, Dale Eugene Zimmerman
  • Patent number: 10763303
    Abstract: Provided is a micro light emission element including a compound semiconductor in which an N-side layer, a light emission layer, and a P-side layer are laminated sequentially from a side of a light emitting surface, in which an N-electrode coupled to the N-side layer and a P-electrode coupled to the P-side layer are disposed on another surface opposite to the light emitting surface, the P-electrode is disposed on the light emission layer, the N-electrode is disposed in an isolation region which is a boundary region of the micro light emission element and isolates the light emission layer from a light emission layer of another micro light emission element, a surface of the N-electrode on a side of the other surface and a surface of the P-electrode on the side of the other surface are flush with each other, and the N-electrode and the P-electrode are both formed of a single interconnection layer.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: September 1, 2020
    Assignee: SHARP KABUSHIKI KAISHA
    Inventor: Katsuji Iguchi
  • Patent number: 10756503
    Abstract: The present disclosure relates to an optical waveguide system. The system may include a first waveguide having a core-guide and a material portion surrounding and encasing the core-guide. The core-guide enables a core-guide mode for an optical signal travelling through the core-guide. A second waveguide forms a lossy waveguide on an outer surface of the first waveguide. The construction of the second waveguide is such as to achieve a desired coupling between the core-guide mode and the lossy waveguide to control an energy level of the optical signal travelling through the core-guide.
    Type: Grant
    Filed: July 17, 2018
    Date of Patent: August 25, 2020
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: Eyal Feigenbaum, Graham S. Allen, Jay W. Dawson, Mikhail A. Noginov
  • Patent number: 10734370
    Abstract: Methods of making semiconductor device packages may involve cutting kerfs in streets between regions of a semiconductor wafer and positioning stacks of semiconductor dice on portions of surfaces of at least some adjacent regions. A protective material may be dispensed only between the stacks of the semiconductor dice, over the exposed remainders of the regions, and in the kerfs. A back side of the semiconductor wafer may be ground to a final thickness, revealing the protective material in the kerfs at a side of the semiconductor wafer opposite the stacks of the semiconductor dice. The protective material between the stacks of the semiconductor dice and within the kerfs may be cut through, leaving the protective material on sides of the semiconductor dice of the stacks and on side surfaces of the regions within the kerfs.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: August 4, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Zhaohui Ma, Wei Zhou, Chee Chung So, Soo Loo Ang, Aibin Yu
  • Patent number: 10734783
    Abstract: A laser oscillator of the present invention comprises: a semiconductor laser module; a first optical fiber for propagating a laser beam from the semiconductor laser module; and a first prism including a first input surface fusion-bonded to the first optical fiber and receiving the laser beam having been input from the first optical fiber, a first reflection surface for reflecting the laser beam having been input from the first input surface and for transmitting a stimulated Raman scattered beam, and a first output surface for outputting the laser beam having been reflected on the first reflection surface.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: August 4, 2020
    Assignee: FANUC CORPORATION
    Inventor: Tetsuhisa Takazane
  • Patent number: 10734779
    Abstract: The present application is applicable to laser technology field and provides a dual-wavelength synchronous pulsed fiber laser based on rare earth ions co-doped fiber, which includes a continuous light LD pumping source, a rare earth ions co-doped fiber and two resonant cavities. Sensitizing ions in the rare earth ions co-doped fiber absorb the pumping light and radiate laser of one wavelength. Meanwhile, sensitized ions in the rare earth ions co-doped fiber radiate laser of another wavelength. Laser generated by sensitizing ions is subjected to Q-switching or mode locking with the saturable absorber inserted in the cavity to generate pulsed laser. Generation and partial reabsorption for the pulsed laser modulates gain of the laser radiated by sensitized ions periodically and generates synchronous pulsed laser, thereby implementing a dual-wavelength synchronous pulsed fiber laser.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: August 4, 2020
    Assignee: SHENZHEN UNIVERSITY
    Inventors: Chunyu Guo, Weiqi Liu, Shuangchen Ruan, Jun Yu, Yewang Chen, Ruoheng Luo, Yihuai Zhu
  • Patent number: 10727648
    Abstract: A light source device includes: a plurality of laser light sources, each configured to emit a light beam; a plurality of collimating lenses, each configured to collimate the light beam emitted from a corresponding one of the laser light sources; a first transmission diffraction grating configured to diffract and combine, in an identical diffraction angle direction, the light beams transmitted through the collimating lenses and incident on a single region at different incident angles; a sensor configured to detect a positional deviation in diffracted light beams that are diffracted and combined by the first transmission diffraction grating; and a plurality of wavelength selecting elements, each disposed on an optical path between a respective one of the collimating lenses and the first transmission diffraction grating and configured to select a wavelength of a corresponding one of the light beams incident on the first transmission diffraction grating.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: July 28, 2020
    Assignee: NICHIA CORPORATION
    Inventor: Norihiro Dejima
  • Patent number: 10714887
    Abstract: Provided herein are systems and methods of manufacture and operation for a compact laser to achieve high-intensity output pulses. These compact laser resonators and methods rely upon separate and distinct functions of the laser resonator to be operated in balance such that the functions, while deleterious when separate are supportive of laser generation and growth when combined within a small volume laser resonator as described herein. The combined elements of the described laser resonator include a delicate balance that allows the laser to operate between plane-parallel operation and unstable operation. This operation mode further allows distinct methods of construction and operation that allow the compact laser to be reliably assembled and tested during assembly. Therefore, despite requiring a delicate balance of disparate elements, the described laser resonator results in a compact robust laser.
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: July 14, 2020
    Assignee: Arete Associates
    Inventors: Micah Boyd, James Murray
  • Patent number: 10714895
    Abstract: An optical source may include an optical gain chip that provides an optical signal and that is optically coupled to an SOI chip. The optical gain chip may include a reflective layer. Moreover, the SOI chip may include: a common optical waveguide, a splitter that splits the optical signal into optical signals, a first pair of resonators that are selectively optically coupled to the common optical waveguide and that are configured to perform modulation and filtering of the optical signals, and a first bus optical waveguide that is selectively optically coupled to the first pair of resonators. Furthermore, resonance wavelengths of the resonators may be offset from each other with a (e.g., fixed) separation approximately equal or corresponding to a modulation amplitude, and a reflectivity of the first pair of resonators may be approximately independent of the modulation.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: July 14, 2020
    Assignee: Axalume, Inc.
    Inventors: Ashok V. Krishnamoorthy, Jock Bovington, Xuezhe Zheng, Saman Saeedi
  • Patent number: 10714901
    Abstract: In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: July 14, 2020
    Assignee: OSRAM OLED GMBH
    Inventors: Bernhard Stojetz, Georg Brüderl