Abstract: A method includes depositing a first work-function layer and a second work-function layer in a first device region and a second device region, respectively, and depositing a first fluorine-blocking layer and a second fluorine-blocking layer in the first device region and the second device region, respectively. The first fluorine-blocking layer is over the first work-function layer, and the second fluorine-blocking layer is over the second work-function layer. The method further includes removing the second fluorine-blocking layer, and forming a first metal-filling layer over the first fluorine-blocking layer, and a second metal-filling layer over the second work-function layer.

Abstract: A method and apparatus provide for determining a temperature at a junction of a laser diode when the laser diode is operated in a lasing state that facilitates heat-assisted magnetic recording, comparing the junction temperature and an injection current supplied during the lasing state to stored combinations of junction temperature and injection current, and determining a likelihood of mode hopping occurring for the laser diode during the lasing state based on the comparison to stored combinations of junction temperature and injection current.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes device fins formed on a substrate; fill fins formed on the substrate and disposed among the device fins; and gate stacks formed on the device fins and the fill fins. The fill fins include a first dielectric material layer and a second dielectric material layer deposited on the first dielectric material layer. The first and second dielectric material layers are different from each other in composition.

Abstract: Techniques are provided for controlling an output laser pulse signal of a medical device. A control device defines a time duration of capacitive discharge to a laser device. The time duration corresponds to an intended energy of the output laser pulse signal. The control device generates a plurality of sub-pulse control signals. The sub-pulse control signals define a series of capacitive discharge events of the capacitor bank. The control device modulates one or more of a sub-pulse control signal period or a sub-pulse time duration of the sub-pulse control signals to modify the capacitive discharge of the capacitor bank to the laser device during the time duration.

Abstract: The present disclosure concerns an integrated circuit comprising a substrate, the substrate comprising a first region having a first thickness and a second region having a second thickness smaller than the first thickness, the circuit comprising a three-dimensional capacitor formed inside and on top of the first region, and at least first and second connection terminals formed on the second region, the first and second connection terminals being respectively connected to first and second electrodes of the three-dimensional capacitor.

Abstract: A semiconductor device includes a semiconductor substrate having a first region and a second region, insulators, gate stacks, and first and second S/Ds. The first and second regions respectively includes at least one first semiconductor fin and at least one second semiconductor fin. A width of a middle portion of the first semiconductor fin is equal to widths of end portions of the first semiconductor fin. A width of a middle portion of the second semiconductor fin is smaller than widths of end portions of the second semiconductor fin. The insulators are disposed on the semiconductor substrate. The first and second semiconductor fins are sandwiched by the insulators. The gate stacks are over a portion of the first semiconductor fin and a portion of the second semiconductor fin. The first and second S/Ds respectively covers another portion of the first semiconductor fin and another portion of the second semiconductor fin.

Abstract: An acousto-optic deflector includes an optical element having a surface with one or more steps formed thereon; a conductive layer formed on the surface with the steps; one or more crystals secured to each step; and electrodes positioned on each surface of each crystal.

Abstract: A semiconductor device includes: a package including: a heat dissipating body comprising a metal, an insulting part surrounding the heat dissipating body, one or more semiconductor laser elements disposed on the heat dissipating body, at least one outer metal layer that is located on a lower surface of the insulting part and is spaced from a lower surface of the heat dissipating body; a mounting substrate including: at least one first metal pattern located at an upper surface of the mounting substrate, and a second metal pattern located at the upper surface of the mounting substrate; at least one first bonding member located between the at least one outer metal layer and the first metal pattern; and a second bonding member located between the lower surface of the heat dissipating body and the second metal pattern, wherein the second bonding member comprises a metal material.

Abstract: Provided here are: a laser diode section provided on a surface of an n-type InP substrate; a spot-size converter section provided on a surface of the n-type InP substrate, the spot-size converter section being composed of a core layer which causes emitted laser light to propagate therein, a p-type InP cladding layer on a front surface side of the core layer, an n-type InP cladding layer—on a back surface side of the core layer, n-type InP cladding layers provided on the both sides of the core layer, and a p-type InP cladding layer provided on respective surfaces of the p-type InP cladding layer and the first cladding layers; a window region provided on a surface of the n-type InP substrate—that is placed on a front-end side of the core layer; and a monitor PD as a monitor section provided on a surface of the window region.

Abstract: A laser inspection system is provided. A laser source emits a laser with a first spectrum and the laser is transmitted by a first optical fiber. A gain optical fiber doped with special ions is connected to the first optical fiber, and a light detector is provided around the gain optical fiber. When the laser with the first spectrum passes through the gain optical fiber, the gain optical fiber absorbs part of the energy level of the laser with the first spectrum, so that the laser with the first spectrum is converted to generate light with a second spectrum based on the frequency conversion phenomenon. The light detector detects the intensity of the light with the second spectrum, so that the power of the laser source can be obtained.

Abstract: A semiconductor structure includes a group IV substrate including group IV dies separated by a scribe line. A group IIIV-chiplet is situated over the group IV substrate at least partially over the scribe line. A group III-V process control monitoring device in the group III-V chiplet is situated over the scribe line. Functional group III-V optoelectronic devices can be situated over the group IV dies.

Abstract: A spot-size converter includes first and second waveguide structures. The first waveguide structure extends longitudinally along a waveguide axis from a first end to a second end and is configured to support a first optical mode at the first end. The second waveguide structure is formed within the first waveguide structure. The second waveguide structure extends longitudinally between the first end and the second end. The second waveguide structure is configured to support a second optical mode at the second end. The second optical mode has a different diameter than the first optical mode. The second waveguide structure includes a waveguide core that has a first cross-sectional area in a first plane normal to the waveguide axis at the first end and a second cross-sectional area in a second plane normal to the waveguide axis at the second end. The second cross-sectional area is larger than the first cross-sectional area.

Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

Abstract: An apparatus and method of indirectly cooling an optomechanical resonator, comprising impinging a laser on an optomechanical resonator attached to a substrate, wherein the optomechanical resonator comprises a cantilever, a cooling end of the cantilever, having a cooling end comprising a laser-induced cooling element, an attachment end of the cantilever, attached to a substrate, and wherein the laser has a peak wavelength in the near-infrared band.

Abstract: The present application discloses a display panel and a manufacturing method thereof. The display panel manufacturing method includes forming an LED die including a sacrificial layer on an array substrate, and then coating black glue material on the array substrate. The black glue material covers the array substrate and a surface of the sacrificial layer away from the array substrate. Then, the black glue material and the sacrificial layer are heated, and the black glue material is cured to form a black glue layer such that the sacrificial layer is decomposed. The display panel and the manufacturing method thereof provided by the present application are for improving contrast of the display panel.

Abstract: A passive Q switching laser device according to an embodiment of the present technology includes: a passive Q switching laser; a signal source; a modulation unit; and a power source unit. The passive Q switching laser includes an excitation light source that emits excitation light, and a resonator that is excited by the excitation light to emit oscillation light. The signal source outputs a drive signal for driving the excitation light source. The modulation unit modulates, on the basis of emission timing at which the oscillation light is emitted from the passive Q switching laser, the drive signal output from the signal source. The power source unit drives, on the basis of the drive signal modulated by the modulation unit, the excitation light source to emit the excitation light.

Abstract: An optical apparatus includes: an optical component opposed to and spaced apart from a light-emitting surface through which laser light is emitted; a case that houses a semiconductor laser element and the optical component and includes an introduction port for introducing gas and an exhaust port for exhausting the gas; and a flow passage section (i.e., a tubular body) including a spray port for spraying the semiconductor laser element with the gas introduced from the introduction port.

Abstract: Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an active mesa structure in combination with an electrical waveguide, wherein the active mesa structure comprises a plurality of laser regions within the active mesa structure itself, each laser region of the active mesa structure being electrically isolated within the active mesa structure itself relative to the other laser regions of the active mesa structure.

Abstract: A laser driving device and a method for enabling a uniform light field, wherein the laser driving device is a high-power laser driving device that enables a uniform light field on the basis of a narrow-band low-spatial-coherence light and is provided for laser fusion. The narrow-band low-spatial-coherence light is configured as a seed of the laser driving device, an amplification and transmission unit amplifies the seed, a frequency conversion unit converts a frequency of the laser, and a focusing component is configured for laser focusing and uniform illumination.

Abstract: The system and method for cooling a laser using a split liquid cooled heat exchanger. The temperature of coolant entering the system is applied to a portion of the system most in need of lower temperatures and a second heat exchanger uses the outflow from the first heat exchanger to cool a remaining portion of the system that has a tolerance for higher temperatures. The laser cooling system is compact, e.g., less than 45 cubic inches and can handle thermal loads of about 800 W.