Abstract: The present invention provides a supply system enabling a precursor of a solid material or a precursor of a liquid material to be supplied to a latter process at no higher concentration than required and also at or above a predetermined concentration. A supply system 1 comprises: a vessel 11 for receiving a precursor material; a vessel heating unit for heating the vessel at a set temperature; a carrier gas heating unit which is disposed in an introduction line L1 and heats a carrier gas; a main measurement unit which is disposed in an outward conduction line L2 and obtains data relating to a gas of the precursor; and a carrier gas temperature control unit for controlling the temperature of the carrier gas heating unit in accordance with a measurement result of the main measurement unit.

Abstract: A method of fabricating cooling features on a CMC component may comprise compressing a fabric preform within tooling including holes and/or recesses facing the fabric preform. During the compression, portions of the fabric preform are pushed into the holes and/or recesses. Gases are delivered through the tooling to deposit a matrix material on exposed surfaces of the fabric preform while the fabric preform is being compressed. The matrix material builds up on the portions of the fabric preform pushed into the holes and/or recesses, and a rigidized preform with surface protrusions is formed. The tooling is removed, and the rigidized preform is densified, thereby forming a CMC component including raised surface features.

Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

Abstract: A method of depositing a coating utilizing a coating apparatus includes providing a coating apparatus above a glass substrate and forming a coating on a surface of the glass substrate while flowing a fluorine-containing compound into the coating apparatus. The fluorine-containing compound inhibits the formation of the coating on one or more portions of the coating apparatus.

Abstract: A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.

Abstract: The disclosure relates to a method for forming a low refractive index layer on a substrate. The method generally includes (a) applying a block copolymer layer on a substrate, the block copolymer including a polar polymeric block and a non-polar polymeric block; (b) swelling the block copolymer layer with a solvent to increase the block copolymer layer thickness; (c) depositing a metal oxide or metalloid oxide layer on polar polymeric blocks of the block copolymer layer; and (d) removing the block copolymer layer from the substrate, thereby forming a porous metal oxide or metalloid oxide layer on the substrate.

Abstract: A production method for a composite material, which includes a porous substrate and a silicon carbide film formed on a surface of a material forming the porous substrate, includes causing a silicon source containing a silicon atom, a chlorine source containing a chlorine atom, and a carbon source containing a carbon atom to react with each other to form the silicon carbide film on the surface of the material forming the porous substrate.

Abstract: A deposition method includes causing aminosilane gas to be adsorbed on a substrate in which a recessed portion is formed on a surface of the substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating, by plasma, a first mixed gas including helium and oxygen, and supplying the first mixed gas to the first silicon oxide film.

Abstract: Systems for and methods of manufacturing a ceramic matrix composite include introducing a gaseous precursor into an inlet portion of a reaction furnace having a chamber comprising the inlet portion and an outlet portion that is downstream of the inlet portion, and delivering a mitigation agent, such as water vapor or ammonia, into an exhaust conduit in fluid communication with and downstream of the outlet portion of the reaction chamber so as to control chemical reactions occurring with the exhaust chamber. Introducing the gaseous precursor densifies a porous preform, and introducing the mitigation agent shifts the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits within the exhaust conduit.

Abstract: Example embodiments relate to a method of protecting a surface of an e-vaping device portion from corrosion, the method including preparing a coating mixture configured to protect the surface from corrosion, and coating the surface with a protective coating based on the coating mixture, wherein the coating is performed via one of electrodeposition, dipping, spraying, and vapor deposition, and the coating mixture includes at least one of a silane and a resin.

Abstract: Examples of a substrate processing apparatus includes a device for subjecting a substrate to processing, and a controller for modifying a control parameter predetermined to control the device with a first modification value and a second modification value that vary over time, thereby calculating a modified parameter, and controlling the device based on the modified parameter, wherein the first modification value has a shorter term for modifying the control parameter than the second modification value.

Abstract: A method can include vapor depositing a corrosion resistant coating to internal and external surfaces of a metallic air data probe. For example, vapor depositing can include using atomic layer deposition (ALD). The method can include placing the metallic air data probe in a vacuum chamber and evacuating the vacuum chamber before using vapor deposition. The corrosion resistant coating can be or include a ceramic coating. In certain embodiments, vapor depositing can include applying a first precursor, then applying a second precursor to the first precursor to form the ceramic coating.

Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.

Abstract: Provided herein are methods for forming a layer on a substrate wherein the layer is formed selectively on a first region of the substrate relative to a second region having a composition different than the first region. Methods of the invention include selectively forming a layer using an inhibitor agent capable of reducing the average acidity of a first region of the substrate having a composition characterized by a plurality of hydroxyl groups. Methods of the invention include selectively forming a layer by exposure of the substrate to: (i) an inhibitor agent comprising a substituted or an unsubstituted amine group, a substituted or an unsubstituted pyridyl group, a carbonyl group, or a combination of these, and (ii) a precursor gas comprising one or more ligands selected from the group consisting of a carbonyl group, an allyl group, combination thereof.

Abstract: In a metal oxide film formation method of the present invention, the following steps are performed. In a solution vessel, a raw-material solution including aluminum as a metallic element is turned into a mist so that a raw-material solution mist is obtained. In a solution vessel provided independently of the solution vessel, a reaction aiding solution including a reaction aiding agent for formation of aluminum oxide is turned into a mist so that an aiding-agent mist is obtained. Then, the raw-material solution mist and the aiding-agent mist are fed to a nozzle provided in a reactor vessel via paths. Thereafter, the raw-material solution mist and the aiding-agent mist are mixed in the nozzle so that a mixed mist is obtained. Then, the mixed mist is fed onto a back surface of a heated P-type silicon substrate.

Abstract: A process for densifying annular porous substrates by chemical vapour infiltration, includes providing a plurality of unit modules including a support plate on which is formed a stack of substrates, the support plate including a central gas inlet opening communicating with an internal volume formed by the central passages of the stacked substrates and gas outlet openings distributed angularly around the central opening, and a thermal mass cylinder disposed around the stack of substrates having a first end integral with the support plate and a second free end, forming stacks of unit modules in the chamber of a densification furnace, and injecting into the stacks of unit modules a gas phase including a gas precursor of a matrix material to be deposited within the porosity of the substrates.

Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

Abstract: A method to operate an apparatus for feeding liquid metal to an evaporator device in a vacuum chamber, wherein the feed tube runs from a container adapted to contain a liquid metal to the evaporator device and wherein an electromagnetic pump is provided in the feed tube and a valve in the feed tube between the electromagnetic pump and the evaporator device. An at least partially gas permeable electromagnetic pump, which is enclosed in a pressure controlled enclosure, is used in the method wherein electromagnetic pump and the pressure controlled enclosure are controlled such that filling and draining of the evaporator device and feed tube can be done without affecting the vacuum pressure in the vacuum chamber.

Abstract: A method for ALD coating of a substrate with a layer containing Ti, Si, N, wherein a reaction gas and then a flushing gas are introduced into a process chamber holding the substrate in a plurality of successive steps, each in one or more cycles, wherein TiN is deposited in a first step with a reaction gas containing Ti and a reaction gas containing N, TiSi is deposited in a second step with a reaction gas containing Ti and a reaction gas containing Si, and in a third step following the second step, TiSiN is deposited with a reaction gas containing Ti, with a reaction gas containing N and with a reaction gas containing Si.

Abstract: The disclosure concerns a method for manufacturing a device for forming at least one focused beam in a near zone, from an electromagnetic wave incident on said device. The method includes depositing a dielectric material layer with a first refractive index on a substrate layer, creating at least one cavity by a microfabrication technique in the dielectric material layer, the device for forming at least one focused beam in a near zone of the substrate layer (110) and the dielectric material layer, filling the at least one cavity with a material having a second refractive index lower than the first refractive index, determining a deviation between a measured focused beam radiation angle obtained from the device for forming at least one focused beam in a near zone and an expected focused beam radiation angle and modifying locally at least one of the two refractive indexes according to the deviation.