Abstract: A read-write circuit of a one-time programmable memory, including: an antifuse array including: n*n antifuse units, between a first node and a second node, the control terminals of switching elements in the antifuse units coupled to AND signals of different word line signals and bit line signals; the first switching device and the first capacitor connected in parallel between the second node and the second voltage source; the reference array including reference resistance and reference switching elements connected in series between the first and third nodes, the reference switching element's control end coupled to OR signals of the n*n AND signals; the second switching device and the second capacitor connected in parallel between the third node and second voltage source; a comparison circuit's first input terminal coupled to the second node and second input terminal coupled to the third node. The circuit has simpler connections, smaller area, and higher reliability.

Abstract: The current disclosure is directed to a SRAM bit cell having a reduced coupling capacitance. In a vertical direction, a wordline “WL” and a bitline “BL” of the SRAM cell are stacked further away from one another to reduce the coupling capacitance between the WL and the BL. In an embodiment, the WL is vertically spaced apart from the BL with one or more metallization level that none of the WL or the BL is formed from. Connection island structures or jumper structures are provided to connect the upper one of the WL or the BL to the transistors of the SRAM cell.

Abstract: An integrated circuit includes a TSV extending from a first surface of a semiconductor substrate to a second surface of the semiconductor substrate and having a first end and a second end, and a non-volatile repair circuit. The non-volatile repair circuit includes a one-time programmable (OTP) element having a programming terminal, wherein in response to an application of a fuse voltage to the programming terminal, the OTP element electrically couples the first end of the TSV to the second end of the TSV.

Abstract: A read-port of a Static Random Access Memory (SRAM) cell includes a read-port pass-gate (R_PG) transistor and a read-port pull-down (R_PD) transistor. A write-port of the SRAM cell port includes at least a write-port pass-gate (W_PG) transistor, a write-port pull-down (W_PD) transistor, and a write-port pull-up (W_PU) transistor. The R_PG transistor, the R_PD transistor, the W_PG transistor, the W_PD transistor, and the W_PU transistor are gate-all-around (GAA) transistors. The R_PG transistor has a first channel width. The R_PD transistor has a second channel width. The W_PG transistor has a third channel width. The W_PD transistor has a fourth channel width. The W_PU transistor has a fifth channel width. The first channel width and the fourth channel width are each smaller than the second channel width. The third channel width is greater than the fifth channel width.

Abstract: Devices and methods are provided for word line pulse width control for a static random access memory (SRAM) devices. A control circuit includes a first transistor, an inverter coupled to the first transistor, and a second transistor comprising a gate, a first source/drain terminal and a second source/drain terminal. The second transistor is coupled to the inverter. The first source/drain terminal of the second transistor is coupled in series to the first transistor. The second source/drain terminal is coupled to a decoder driver circuit. The second transistor is configured to charge a load of a common decoder line so as to reduce an effective load of the decoder driver circuit.

Abstract: A memory device includes a memory string and a control circuit coupled to the memory string. The memory string includes a top select gate, word lines, a bottom select gate, and a P-well. The control circuit is configured to, in an erasing operation, apply an erasing voltage to the P-well, apply a verifying voltage to a selected word line of the word lines after applying the erasing voltage to the P-well, and apply a first turn-on voltage to the bottom select gate, starting after applying the erasing voltage to the P-well and before applying the verifying voltage to the selected word line.

Abstract: A device includes a programmable ROM circuit, an address circuit, and a processor. The programmable ROM circuit includes multiple physically contiguous pairs of bit-cells, each pair of bit-cells includes an active layer trace extending continuously across both of the bit-cells, each pair of bit-cells comprises a shared contact layer point when the pair of bit-cells is programmed to a value of one and no shared contact layer point when the pair of bit-cells is programmed to a value of zero. The address circuit is coupled to the programmable ROM circuit and configured to address only a first bit-cell of each pair of bit-cells. The processor is coupled to the address circuit and the programmable ROM circuit and configured to use the address circuit to read data from one or more pairs of bit-cells of the programmable ROM circuit.

Abstract: A memory system includes a memory cell array and a controller coupled to the memory cell array. The controller is configured to control applying a first program voltage to a word line to program memory cells in the memory cell array, the memory cells being coupled to the word line, and in response to receiving a suspend command, control applying a positive bias discharge voltage to the word line when the first program voltage ramps down.

Abstract: Embodiments of a peak power management (PPM) circuit on a memory die are disclosed. The PPM circuit includes a first transistor and a second transistor arranged in parallel, wherein the first and second transistors each has a drain terminal electrically connected to a first power source and a second power source, respectively. The PPM circuit also includes a resistor having a first terminal electrically connected to respective source terminals of the first and second transistors. The PPM circuit further includes a first contact pad on the memory die, electrically connected to a second contact pad on a different memory die through a die-to-die connection. The PPM circuit also includes a third transistor with a drain terminal electrically connected to a second terminal of the resistor, and a source terminal electrically connected to the first contact pad.

Abstract: A memory circuit includes a precharge circuit and control circuit. The precharge circuit comprises a first precharge circuit, second precharge circuit, first power supply end, second power supply end, first control end, second control end and data end. The first precharge circuit is connected with the first power supply end, first control end and data end. The second precharge circuit is connected with the second power supply end, second control end and data end. A first precharge voltage is input into the first power supply end, and a second precharge voltage is input into the second power supply end. The control circuit is configured to control connection and disconnection between the data end and second power supply end and to control connection and disconnection between the data end and first power supply end.

Abstract: A temperature exposure detection system includes a plurality of nonvolatile memory cells. The memory includes memory read circuitry for reading the plurality of memory cells to determine a data retention error rate of the plurality of memory cells. The temperature exposure detection system determines a temperature exposure of the system based on the determined data retention error rate.

Abstract: According to one embodiment, a semiconductor memory device includes a memory cell array, a data storage circuit and a control circuit. The data storage circuit holds first data to be written into the memory cell and holds 1 bit data calculated from the first data. The control circuit writes the data of n bits into the memory cell in a first write operation and then executes a second write operation. The control circuit carries out the following control in the second write operation. It reads data stored in the memory cell in the first write operation. It restores the first data based on the data read from the memory cell and the 1 bit data held in the data storage circuit. It writes the restored first data into the memory cell.

Abstract: This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

Abstract: A non-volatile memory device includes an upper semiconductor layer including a first metal pad and vertically stacked on a lower semiconductor layer. The upper semiconductor layer includes a first memory group spaced apart from a second memory group in a first horizontal direction by a separation region, and the lower semiconductor layer includes a second metal and a bypass circuit underlying at least a portion of the separation region and configured to selectively connect a first bit line of the first memory group with a second bit line of the second memory group. The upper semiconductor layer is vertically connected to the lower semiconductor layer by the first metal pad and the second metal pad.

Abstract: A semiconductor apparatus includes a memory controller and data storage configured to input and output data in synchronization with a clock signal provided from the memory controller. The data storage includes a memory cell array and a data output apparatus configure to output read data from the memory cell array by sensing a logic level of the read data during a low-level period of a first clock, which is an inverted signal of a divided clock of the clock signal, and a low-level period of a second clock, the second clock having a set to phase delay amount from the divided clock.

Abstract: A low power SRAM (static RAM) for an image sensor includes a voltage generation circuit for providing a positive supply voltage VP and a negative supply VN, wherein VDD>Vp>Vn>Vgnd; a plurality of memory cells coupled to a respective plurality of column sense lines in a pixel array, the plurality of memory cells receiving differential inputs dp and dn; and a Gray counter coupled to switchably couple VP and VN to the differential inputs dp and dn of the plurality of memory cells. A method of operating an image sensor with a low power SRAM includes acquiring an image by the image sensor; generating VP and VN such that VDD>VP>VN>Vgnd; receiving an output g of a column of pixels at a clock input of a memory cell; and switchably coupling VP and VN to the differential inputs dp and dn of a plurality of memory cells in the SRAM according to a codeword from a Gray counter.

Abstract: The storage device includes a memory controller and a plurality of banks, each of the plurality of banks including a plurality of memory devices. Each of the plurality of memory devices includes: a data selector for selecting and outputting data of a memory device that is included in any one of the plurality of banks based on a bank select signal; a latch unit for storing the data that is output from the data selector; and a transmission control signal generator for generating the bank select signal such that the data that is stored in the latch unit is sequentially output.

Abstract: Disclosed in some examples are memory devices which feature intelligent adjustments to SLC cache configurations that balances memory cell lifetime with performance. The size of the SLC cache can be adjusted during usage of the memory device based upon a write amplification (WA) metric of the memory device. In some examples, the size of the SLC cache can be adjusted during usage of the memory device based upon a write amplification (WA) metric of the memory device and a memory device logical saturation metric (percentage of valid user data written in the device of the total user size).

Abstract: An OTP with ultra-low power read can be programmed with a minimum and a maximum program voltage. When programming within the range, the post-program OTP to pre-program resistance ratio can be larger than N, where N>50, so that more sensing techniques, such as single-end sensing, can be used to reduce read current. At least one of the OTP cells can be coupled to a common bitline, which can be further coupled to a first supply voltage lines via a plurality of datalines. The resistance in the at least one OTP cell can be evaluated by strobing at least one comparator output of the discharging bitline/dataline.

Abstract: A method for programming a memory device including a first plane and a second plane is provided. The method includes simultaneously initiating programming of the first plane and the second plane, and in response to the first plane being successfully programmed and the second plane not being successfully programmed, suspending the programming of the first plane, and keeping the programming of the second plane.