Patents Examined by Mohammed A Bashar
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Patent number: 12366971Abstract: A memory device includes memory cells connected to a plurality of word lines. The memory device also includes a read operation performer configured to perform a read operation of applying an equalizing voltage to the plurality of word lines and applying a read voltage to a selected word line. The memory device further includes a fail cell counter configured to count a number of on cells among selected memory cells connected to the selected word line at each of time points. The memory device additionally includes a read operation controller configured to control the read operation performer to determine a length of an evaluation period based on a result of comparing the number of on cells at each of the time points, and configured to sense a voltage of bit lines respectively connected to the selected memory cells after the evaluation period elapses from the time.Type: GrantFiled: December 6, 2022Date of Patent: July 22, 2025Assignee: SK hynix Inc.Inventors: Chan Hui Jeong, Dong Hun Kwak, Se Chun Park
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Patent number: 12347515Abstract: Methods, systems, and devices for circuit for tracking access occurrences are described. For instance, a memory device may include a memory array with column lines extending in a first direction and row lines extending in a second direction. The memory device may include a set of sense amplifiers adjacent to the memory array in the first direction, where a first subset of the set of sense amplifiers is coupled with the first set of column lines and a second subset of the set of sense amplifiers is coupled with the second set of column lines. The memory device may include a circuit adjacent to the set of sense amplifiers along the second direction, where the circuit is configured to increment, based on the access operation for the row line, a value including the logic states read by the second subset of the set of sense amplifiers.Type: GrantFiled: July 11, 2022Date of Patent: July 1, 2025Assignee: Micron Technology, Inc.Inventors: Yuan He, Jiyun Li
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Patent number: 12340833Abstract: A refresh control circuit includes: a processing circuit, configured to receive a refresh command signal, and perform pulse combination processing on the refresh command signal to obtain a refresh combined signal, the refresh command signal having a plurality of pulses in a first time period and keeping a level state unchanged in a second time period, and the first time period and the second time period existing alternately; a logic circuit, configured to receive the refresh command signal and the refresh combined signal, and perform logical operation processing on the refresh command signal and the refresh combined signal to obtain a target control signal; and a power supply circuit, configured to receive the target control signal, and determine whether to perform a power supply operation according to the level state of the target control signal.Type: GrantFiled: January 20, 2023Date of Patent: June 24, 2025Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.Inventor: Liang Zhang
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Patent number: 12324365Abstract: A computer memory device includes a bottom electrode, a top electrode, and a memory component arranged between the top electrode and the bottom electrode. The memory component is made of a dielectric solid-state material and is in direct contact with the top electrode and the bottom electrode. The computer memory device further includes a proximity heater configured to increase a temperature of a portion of the memory component. The computer memory device further includes a layer of dielectric material in direct contact with the proximity heater. The layer of dielectric material is in direct contact with one of the bottom electrode and the top electrode.Type: GrantFiled: December 2, 2022Date of Patent: June 3, 2025Inventors: Timothy Mathew Philip, Injo Ok, Jin Ping Han, Ching-Tzu Chen, Kevin W. Brew
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Patent number: 12299371Abstract: A device including functional blocks and dummy cells. The functional blocks include a first functional block and a second functional block. Each dummy cell having a cell boundary defined by non-functioning active areas and non-functioning gates for filling space between the functional blocks and including a dummy cell configured to be situated between the first functional block and the second functional block such that the dummy cell directly abuts each of the first functional block and the second functional block.Type: GrantFiled: June 29, 2022Date of Patent: May 13, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Yeh Yu, Wei-Yi Hu, Shih-Hsuan Chien, You-Cheng Xiao, Ya-Chi Chou
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Patent number: 12293792Abstract: A voltage prediction method, a memory storage device and a memory control circuit unit are disclosed. The method includes: reading a plurality of memory cells in a rewritable non-volatile memory module by using a first read voltage level to obtain count information, and the first read voltage level is configured to distinguish a first state and a second state adjacent to each other in a threshold voltage distribution of the memory cells, and the count information reflects a total number of first memory cells meeting a target condition among the memory cells; and predicting a second read voltage level according to the count information, and the second read voltage level is configured to distinguish a third state and a fourth state adjacent to each other in the threshold voltage distribution.Type: GrantFiled: April 10, 2023Date of Patent: May 6, 2025Assignee: PHISON ELECTRONICS CORP.Inventors: Po-Cheng Su, Po-Hao Chen, Yu-Cheng Hsu, Wei Lin
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Patent number: 12293800Abstract: In addition to word line related short circuits within the blocks of the array structure of a non-volatile memory device, such as NAND memory, word line related shorts can also occur in the routing for supplying the word lines of the memory blocks. Depending on the layout of the routing, some shorts for the word lines associated with one block can affect other blocks of the memory array. In particular, if the routing of a pair of adjacent local supply lines are adjacent to a global supply line, a short between the pair of adjacent local supply lines for one block can lead, through the global supply line, to defects in another of the block. Techniques are presented for detecting these layout related problematic word lines.Type: GrantFiled: July 3, 2023Date of Patent: May 6, 2025Assignee: Sandisk Technologies, Inc.Inventors: Xuan Tian, Liang Li, Dandan Yi, Jojo Xing, Vincent Yin
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Patent number: 12283301Abstract: A semiconductor memory device includes: a memory cell region including a plurality of cell mats in each of which a plurality of rows are disposed, each row coupled to normal cells and row-hammer cells; a repair control circuit suitable for generating a pairing flag denoting whether a cell mat in which an active row corresponding to an active address is disposed, is repaired with another cell mat; and a refresh control circuit suitable for: selecting, when an active command is inputted, a sampling address based on first and second data read from the row-hammer cells of the active row, refreshing, when a target refresh command is inputted, one or more adjacent rows to a target row corresponding to the sampling address, and selectively refreshing, when the target refresh command is inputted, one or more adjacent rows to a paired row of the target row according to the pairing flag.Type: GrantFiled: May 25, 2022Date of Patent: April 22, 2025Assignee: SK hynix Inc.Inventors: Chul Moon Jung, Woongrae Kim
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Patent number: 12266399Abstract: A write operation assist circuit is provided, including: pre-charging circuit, a drive signal circuit, a programmable delay circuit, a charge pump, a write driving circuit and a column selector, wherein the pre-charging circuit has a pre-charging signal output terminal coupled to a pre-charging signal input terminal of the drive signal circuit, a first voltage output terminal coupled to a first bit line, and a second voltage output terminal coupled to a second bit line; the driving signal circuit has a first input terminal coupled to the first bit line, a second input terminal coupled to the second bit line, a first output terminal coupled to a first input terminal of the programmable delay circuit, and a second output terminal coupled to a second input terminal of the programmable delay circuit; the programmable delay circuit has an output terminal coupled to a first terminal of the charge pump.Type: GrantFiled: November 19, 2020Date of Patent: April 1, 2025Assignee: SPREADTRUM COMMUNICATIONS (SHANGHAI) CO., LTD.Inventor: Yiqi She
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Patent number: 12260910Abstract: The present disclosure is directed to a sense amplifier architecture for a memory device having a plurality of memory cells. Groups of non-volatile memory cells store respective codewords formed by stored logic states, logic high or logic low, of the memory cells of the group. The sense amplifier architecture has a plurality of sense amplifier reading branches, each sense amplifier reading branch coupled to a respective memory cell and configured to provide an output signal, which is indicative of a cell current flowing through the same memory cell; a comparison stage, to perform a comparison between the cell currents of memory cells of a group; and a logic stage, to determine, based on comparison results provided by the comparison stage, a read codeword corresponding to the group of memory cells.Type: GrantFiled: December 29, 2022Date of Patent: March 25, 2025Assignee: STMICROELECTRONICS S.r.l.Inventors: Fabio Enrico Carlo Disegni, Marcella Carissimi, Alessandro Tomasoni, Daniele Lo Iacono
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Patent number: 12254948Abstract: A memory device standby procedure can include idling a first memory device in a low-power standby mode, the first memory device coupled to a memory interface that couples multiple memory devices to a host and includes a command line (CA) and a standby exit line (EX), and the first memory device can include a primary die coupled to multiple secondary dies using an intra-package bus. At the first memory device, the procedure can include waking receiver circuitry on the primary die in response to a state change on the standby exit line, and sampling the command line using logic circuitry on the primary die. When a wakeup message on the command line comprises a chip identification that corresponds to the first memory device, the procedure can include initiating a standby exit procedure for the first memory device.Type: GrantFiled: April 19, 2022Date of Patent: March 18, 2025Assignee: Micron Technology, Inc.Inventor: Hari Giduturi
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Patent number: 12248684Abstract: An operating method of a non-volatile memory device, the method including: receiving a program command from an external device; determining an operating mode in response to the program command; when the operating mode is a surface mount technology (SMT) mode, performing an initial program operation in which a plurality of memory cells are programmed through a plurality of steps to form a first threshold voltage distribution; and when the operating mode is a normal mode, performing a normal program operation in which the plurality of memory cells are programmed through a single step to form a second threshold voltage distribution, wherein the first threshold voltage distribution is narrower in width than the second threshold voltage distribution.Type: GrantFiled: December 29, 2022Date of Patent: March 11, 2025Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Joohee Son, Hune Seo, Dongcheul Chang, Wandong Kim
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Patent number: 12249385Abstract: A method for calibrating a characteristic value of a signal processing device comprised in SerDes inside of an interface circuit of a memory controller includes: monitoring a current of a voltage of a test element to generate a process detection result by a monitor and calibration module; monitoring an environment temperature to generate a temperature monitored result by the monitor and calibration module; selecting a reference value subset from multiple reference value subsets as a preferred reference value subset for a calibration operation based on the process detection result and the temperature monitored result; and performing the calibration operation on the signal processing device by at least one calibration circuit of the monitor and calibration module according to the preferred reference value subset to adjust the characteristic value of the signal processing device.Type: GrantFiled: July 24, 2023Date of Patent: March 11, 2025Assignee: Silicon Motion, Inc.Inventor: Fu-Jen Shih
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Patent number: 12243607Abstract: Implementations described herein relate to performing a memory built-in self-test and indicating a status of the memory built-in self-test. A memory device may read one or more bits, associated with a memory built-in self-test, that are stored in a mode register of the memory device. The memory device may identify, based on the one or more bits, that the memory built-in self-test is enabled. The memory device may set a DMI bit of the memory device to a first value and perform the memory built-in self-test based on identifying that the memory built-in self-test is enabled. The memory device may set the DMI bit of the memory device to a second value based on a completion of the memory built-in self-test.Type: GrantFiled: December 21, 2023Date of Patent: March 4, 2025Assignee: Micron Technology, Inc.Inventor: Scott E. Schaefer
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Patent number: 12243602Abstract: In some aspects of the present disclosure, a memory device is disclosed. In some aspects, the memory device includes a plurality of memory cells arranged in an array, an input/output (I/O) interface connected to the plurality of memory cells to output data signal from each memory cell, and a control circuit. In some embodiments, the control circuit includes a first clock generator to generate a first clock signal and a second clock signal according to an input clock signal and a chip enable (CE) signal and provide the first clock signal to the plurality of memory cells. In some embodiments, the control circuit includes a second clock generator to generate a third clock signal according to the input clock signal and a DFT (design for testability) enable signal. In some embodiments, the control circuit generates an output clock signal according to the second clock signal or the third clock signal.Type: GrantFiled: January 12, 2024Date of Patent: March 4, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jaspal Singh Shah, Atul Katoch
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Patent number: 12245417Abstract: A memory device includes pages each including memory cells arranged on a substrate. Voltages applied to first and second gate conductor layers and first and second impurity layers in each memory cell are controlled to retain a group of positive holes. In a page write operation, a voltage of the channel semiconductor layer is made equal to a first data retention voltage. In a page erase operation, the group of positive holes are discharged by controlling the voltages, the voltage of the channel semiconductor layer is made equal to a second data retention voltage, and erase and ground voltages are applied to selected and non-selected pages respectively. The first and second impurity layers and first and second gate conductor layers are connected to source, bit, plate, and word lines. The source, word, and plate lines are disposed parallel to the pages. The bit line is disposed perpendicular to the pages.Type: GrantFiled: March 6, 2023Date of Patent: March 4, 2025Assignee: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.Inventors: Koji Sakui, Nozomu Harada, Masakazu Kakumu
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Patent number: 12236992Abstract: A system includes a memory array having pattern cells and data cells. The pattern cells are configured to store only a first logic state. The data cells are configured to store the first logic state or a second logic state. Bias circuitry is configured to apply voltages to the pattern cells and data cells. Sensing circuitry is configured to read the pattern cells. A controller is configured to apply, using the bias circuitry, first voltages to the pattern cells; determine, using the sensing circuitry, that at least a portion of the pattern cells switch; determine, based on the portion of the pattern cells that switch, to refresh a codeword; and apply, using the bias circuitry, the refresh of the codeword.Type: GrantFiled: June 28, 2022Date of Patent: February 25, 2025Assignee: Micron Technology, Inc.Inventors: Umberto di Vincenzo, Ferdinando Bedeschi, Christian Marc Benoit Caillat
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Patent number: 12237017Abstract: A block erase method for a flash memory is provided. The block erase method is to perform block erase on a block with a predetermined block size. The block erase method includes: performing an erase verification on bytes byte-by-byte in the block when performing the block erase; checking an erase step of the byte when the byte does not pass the erase verification; when the erase step of the byte exceeds a predetermined threshold value, performing the block erase with a partitioned block smaller than the predetermined block size, and returning to an erase verification stage to perform the erase verification; and when the erase step of the bytes does not exceed the predetermined threshold value, continuing to perform the block erase with the predetermined block size, and returning to the erasure verification stage to continue to perform the erase verification.Type: GrantFiled: December 1, 2022Date of Patent: February 25, 2025Assignee: Winbond Electronics Corp.Inventors: Lung-Chi Cheng, Ying-Shan Kuo, Jun-Yao Huang, Ju-Chieh Cheng, Yu-Cheng Chuang
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Patent number: 12231129Abstract: The signal generator includes the following: an oscillation generation circuit, configured to generate an initial oscillation signal based on an oscillation control signal; a duty cycle correction circuit, connected to an output end of the oscillation generation circuit and configured to adjust a duty cycle of the initial oscillation signal based on a duty cycle control signal, to generate an adjusted oscillation signal; an output interface, connected to an output end of the duty cycle correction circuit and configured to output the adjusted oscillation signal to an external test system; and an amplitude adjustment circuit, connected to the output end of the duty cycle correction circuit and configured to adjust an amplitude of the adjusted oscillation signal based on an amplitude control signal, to generate a test signal.Type: GrantFiled: September 30, 2022Date of Patent: February 18, 2025Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.Inventors: Jianyong Qin, Jianni Li, Zhonglai Liu
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Patent number: 12230351Abstract: A circuitry (30) for on-chip power regulation is provided. The circuitry (30) comprises a memory array (31) comprising a plurality of memory cell blocks (32) arranged in rows and columns, where the memory cell blocks are clustered into a defined number of memory cell blocks (33) along the row, each cluster (33) is connected to a respective local reference line (34). In addition, the circuitry (30) comprises a plurality of sense amplifiers (40) connected to the respective memory cell blocks (32). The circuitry (30) further comprises at least one dummy memory cell block (35) additionally arranged to each cluster of memory cell blocks (33), where the dummy memory cell block (35) is connected to a main reference line (36). Moreover, the circuitry (30) comprises at least one transistor (37) arranged in between the local reference line (34) of each cluster of memory cell blocks (33) and the main reference line (36).Type: GrantFiled: March 25, 2021Date of Patent: February 18, 2025Assignee: MICLEDI MICRODISPLAYS BVInventors: Soeren Steudel, Sean Lord