Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

Abstract: A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

Abstract: The purpose of the invention is to form a stable oxide semiconductor TFT in a display device. The concrete structure is: A display device having a TFT substrate that includes a TFT having an oxide semiconductor layer comprising: the oxide semiconductor layer is formed on a first insulating film that is formed by a silicon oxide layer, the oxide semiconductor layer and an aluminum oxide film are directly formed on the first insulating film. The first insulating film becomes oxygen rich when the aluminum oxide film is formed on the first insulating film by sputtering. Oxygens in the first insulating film is effectively confined in the first insulating film, eventually, the oxygens diffuse to the oxide semiconductor for a stable operation of the oxide semiconductor TFT.

Abstract: The present disclosure discloses a display panel and a display module comprising a display area, a crack protection area surrounding the display area, and a cutting area located at a periphery of the crack protection area. A recess surrounding the display area is disposed in the crack protection area and the supporting member is located in the recess. The supporting member has a surface away from one side of the substrate, and the surface has a height defined in a direction perpendicular to the base substrate which is not higher than a height of a contact surface between the base substrate and the array layer in the direction perpendicular to the base substrate.

Abstract: A display apparatus includes: a main display area; a component area including a transmission area; a peripheral area adjacent to the main display area; a substrate; main display elements arranged on a first surface of the substrate in the main display area, wherein main pixel circuits are respectively connected to the main display elements; auxiliary display elements arranged on the first surface of the substrate in the component area, wherein auxiliary pixel circuits are respectively connected to the auxiliary display elements; a bottom metal layer arranged between the substrate and the auxiliary pixel circuits in the component area; and an anti-reflection layer arranged on a second surface, opposite to the first surface, of the substrate, and overlapping the bottom metal layer in the component area.

Abstract: A semiconductor light-emitting device includes a substrate; a first semiconductor layer and a second semiconductor layer formed on the substrate, wherein the first semiconductor layer includes a first exposed portion and a second portion; a plurality of first trenches formed on the substrate and including a surface composed by the first exposed portion; a second trench formed on the substrate and including a surface composed by the second exposed portion at a periphery region of the semiconductor light-emitting device, wherein each of the plurality of first trenches is branched from the second trench; and a patterned metal layer formed on the second semiconductor layer and including a first metal region and a second metal region, and portions of the second metal region are formed in the plurality of first trenches and the second trench to electrically connect to the first exposed portion and the second exposed portion.

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

Abstract: A light-emitting layer structure that maximizes constructive interference for light emission by varying a phase shift introduced by reflective electrodes. The light-emitting layer structure includes a first and second optical cavity including a first and second reflective electrode; a first and second partially transparent electrode; and a first and second emissive layer (EML) disposed between the first and second reflective electrodes and the first and second partially transparent electrodes, wherein the first EML emits light having a first wavelength; wherein the first reflective electrode introduces a first phase shift, depending on the first wavelength, on reflection of light emitted by the first EML; and wherein the second EML emits light having a second wavelength and the second reflective electrode introduces a second phase shift, depending on the second wavelength, on reflection of light emitted by the second EML, and the first phase shift is different from the second phase shift.

Abstract: An electroluminescent display device includes a substrate having an emission region and a bezel region, a bank layer that extends from the emission region to the bezel region, a plurality of signal lines which are disposed on different layers on the substrate, a first metal layer that overlaps the plurality of signal lines and has a step, a second metal layer that is disposed on the first metal layer, and an intermediate layer between the first and second metal layer. A step or curvature above the first electrode may be offset by the first intermediate layer so that incident from the outside is inwardly reflected. Therefore, a failure that a user at the outside recognizes the reflected light may be solved.

Abstract: A method of manufacturing a display device comprises: forming a thin film transistor array on a substrate, wherein the substrate has a via which enable two opposite sides of the substrate to be communicated with each other; and filling the via with a conductive filler after the thin film transistor array is formed, so that the conductive filler is electrically connected with the thin film transistor array.

Abstract: A method for manufacturing a semiconductor device according to the present invention includes the steps of (a) preparing a lead frame including a power chip die pad to which two terminals are connected, a control element die pad to which one terminal is connected, and tie bar portions connecting between a plurality of terminals including the two terminals, (b) placing a power chip and a free wheel diode on the power chip die pad and placing ICs on the control element die pad, (c) encapsulating in a mold resin to allow the tie bar portions to be exposed outside and a plurality of terminals including the two terminals and the one terminal to protrude outward, and (d) removing the tie bar portions other than the tie bar portions connecting the two terminals.

Abstract: The present application provides a display panel and a manufacturing method thereof. The display panel includes a first substrate, a plurality of bonding pads, an insulating adhesive, a sealant, a blocking layer, a second substrate, and a chip on film (COF). The display panel of the present application effectively reduces an area of a non-display region of a display panel in the prior art by side-bonding the COF and realizes an ultra-narrow bezel display with a width of the non-display region being less than 1 mm. Meanwhile, through a configuration of the blocking layer, the conductive adhesive can be prevented from overflowing and causing short circuits between each of the plurality of bonding pads.

Abstract: An organic light emitting diode (OLED) display panel and a preparation method thereof, the OLED display panel includes an OLED device layer, a light emitting layer, an encapsulation layer and a color film layer which are disposed layer by layer. The light emitting layer includes a first light emitting area and a second light emitting area which are spaced apart, and a pixel defined layer (PDL) area is disposed between the first light emitting area and the second light emitting area. The color film layer includes a first color film area and a second color film area which are spaced apart, and a black matrix (BM) area is disposed between the first color film area and the second color film area. A reflection layer is disposed between the color film layer and the light emitting layer.

Abstract: An array substrate includes: a base substrate; and a display region in which a signal line is provided and a fanout region provided on the base substrate, the fanout region including a first fanout line layer in which a first fanout line is provided, a second fanout line layer in which a second fanout line is provided, and one or more spacer layers between the first fanout line layer and the second fanout line layer; the signal line is connected to the first fanout line or the second fanout line; and the spacer layers are made of an insulating material; wherein an orthographic projection of the first fanout line on the base substrate and an orthographic projection of the second fanout line on the base substrate are at least partially overlapped with each other. A method of manufacturing an array substrate and a display device are also provided.

Abstract: The present disclosure provides a display substrate, a method for preparing the same, and a display device. The display substrate includes: a base substrate; a metal pattern located on the base substrate, and an anti-reflection pattern located on a surface of the metal pattern proximate to the base substrate, in which a difference between a first slope angle of the anti-reflection pattern and a second slope angle of the metal pattern is less than a first threshold, and a distance between a first edge of a side surface of the anti-reflection pattern proximate to the metal pattern and a second edge of a side surface of the metal pattern proximate to the anti-reflection pattern is less than a second threshold.

Abstract: Provided are a flexible organic light-emitting display device and a method of manufacturing the same. The flexible organic light-emitting display device includes a metal oxide infiltrated layer as part of at least one of a plurality of organic layers stacked on and around an organic light-emitting device.

Abstract: A semiconductor package includes a package substrate including a die attachment region, a semiconductor die attached to the die attachment region, and a die over-shift indicating pattern disposed on or in the package substrate and spaced apart from the die attachment region. The die over-shift indicating pattern is used as a reference pattern for obtaining a shifted distance of the semiconductor die.

Abstract: A substrate for an electronic device includes an insulating layer; a via extending into the insulating layer; a light shielding layer in the via; and a thin film transistor comprising an active layer on the light shielding layer and in the via. The light shielding layer is configured to shield light from irradiating on the active layer.

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The thin film transistor is provided on a base substrate and includes: an active layer including a first surface and a second surface which are opposite to each other, in which the second surface is closer to the base substrate than the first surface; and a source-drain electrode layer including a source electrode and a drain electrode which are separated from each other and are respectively connected with the active layer; each of the first surface and the second surface is a non-flat surface, and the non-flat surface includes a plurality of depressions and a plurality of protrusions which are alternately arranged.

Abstract: Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.