Abstract: The disclosed technology teaches a memory device with memory cells, each with a sense circuit with an input node in current flow communication, a BLC transistor, a transfer transistor, a current source transistor, and an output circuit to generate data based on a voltage on the sensing node. Also disclosed is a sensing sequence in which control circuits apply BLC voltage to the BLC transistor, transfer voltage to the transfer transistor and current control voltage to the current source transistor to provide a charging current to the BL, and to adjust the current control voltage to provide a keeping current on the BL from the current source transistor, and to apply a read voltage to a selected memory cell on the bit line. Additionally included is applying a timing signal to the output circuit to generate the data based on a voltage on the sensing node.

Abstract: Various implementations described herein may refer to an integrated circuit using discharging circuitries for bit lines. In one implementation, an integrated circuit may include a memory array having memory cells, where the memory cells are arranged into columns and configured to be accessed using bit line pairs. The integrated circuit may also include discharging circuitries to selectively discharge the bit line pairs, where a respective discharging circuitry is coupled to a negative supply voltage node of a respective column of memory cells. The respective discharging circuitry may discharge a bit line pair of the respective column to a first voltage when the bit line pair is selected for a memory operation, and may discharge the bit line pair of the respective column to a second voltage when the bit line pair is not selected for a memory operation, where the second voltage is greater than the first voltage.

Abstract: An example method of determining storage operation parameters based on data stream attributes may include: receiving, by a controller, a write command specifying a data item and an identifier of a data stream comprising the data item, wherein a part of the identifier of the data stream encodes a data attribute shared by data items comprised by the data stream; determining, using the data attribute, a storage operation parameter; and transmitting, to a memory device, an instruction specifying the data item and the storage operation parameter.

Abstract: Embodiments are directed to providing a user interface (UI) that streamlines and simplifies the process of monitoring critical power-generation module (PGM) parameters after a PGM assembly is shutdown. The UI displays, in real-time, indicators corresponding to one or more post-shutdown PGM parameters. The UI provides indications of whether the post-shutdown PGM parameters meet post-shutdown criteria of the PGM assembly. When a post-shutdown PGM parameter does not meet the post-shutdown criteria, a user alert is provided to the user. A protocol may additionally be provided to the user. In some embodiments, the protocol may enable the user to return the PGM assembly to a condition that satisfies the post-shutdown criteria. The protocol may be a safety protocol and/or an asset protection protocol.

Abstract: Apparatuses and methods for a temperature dependent delay between a wordline off signal and deactivating the wordline are disclosed. Memory devices may have reduced reliability when operating at relatively cold temperatures, which may be due in part to an increase in the write recovery time while the timing for a wordline to deactivate remains relatively unaffected. In some embodiments of the present disclosure, a delay circuit is used to insert a temperature dependent delay between a wordline off command being issued and the wordline being deactivated. The delay circuit may increase the length of temperature dependent delay at relatively cold temperatures, and decrease the length of the delay at relatively warm temperatures.

Abstract: An address counting circuit includes an address counter suitable for counting an address in response to a counting signal; and a counting control block suitable for controlling the address counter to skip the address of at least one predetermined value.

Abstract: An address counting circuit includes an address counter suitable for counting an address in response to a counting signal; and a counting control block suitable for controlling the address counter to skip the address of at least one predetermined value.

Abstract: A computer-implemented method for testing a printed memory device is provided. The computer-implemented method includes performing, by a controller, a first read operation on a cell of the printed memory device; performing, by the controller, a second read operation on the cell; converting, by the controller, a first result of the first read operation and a second results of the second read operation to a first digital value and a second digital value, respectively; comparing, by the controller, the first digital value and the second digital value to a first predetermined threshold and a second predetermined threshold, respectively, wherein the first predetermined threshold is a low threshold and the second predetermined threshold is a high threshold; and providing, by the controller, a result of the test for the printed memory device based on the comparing.

Abstract: There are provided a data buffer and a memory system having the same. The data buffer includes first and second amplifiers configured to output output data by inverting input data, the first and second amplifiers having coupled output nodes to which the output data is output, wherein both of the first and second amplifiers are activated to output the output data when the input data has a first swing level, and wherein one of the first and second amplifiers is activated to output the output data when the input data has a second swing level narrower than the first swing level.

Abstract: Systems, apparatuses, and methods for implementing dynamic control of a multi-region fabric are disclosed. A system includes at least one or more processing units, one or more memory devices, and a communication fabric coupled to the processing unit(s) and memory device(s). The system partitions the fabric into multiple regions based on different traffic types and/or periodicities of the clients connected to the regions. For example, the system partitions the fabric into a stutter region for predictable, periodic clients and a non-stutter region for unpredictable, non-periodic clients. The system power-gates the entirety of the fabric in response to detecting a low activity condition. After power-gating the entirety of the fabric, the system periodically wakes up one or more stutter regions while keeping the other non-stutter regions in power-gated mode. Each stutter region monitors stutter client(s) for activity and processes any requests before going back into power-gated mode.

Abstract: A memory circuit and a data bit status detector thereof are provided. The data bit status detector includes a sense amplifying circuit, a data receiving circuit, and a reference circuit. The sense amplifying circuit has a first sense input end and a second sense input end. The sense amplifying circuit senses and amplifies a difference between a first impedance on the first sense input end and a second impedance on the second sense input end to generate a sensing output signal. The data receiving circuit receives a plurality of bits of a data signal and provides the first impedance between the first sense input end and a reference grounding end according to the bits of the data signal. The reference circuit receives a plurality of bias voltages and provides the second impedance between the second sense input end and the reference grounding end according to the bias voltages.

Abstract: A system includes: a first device; a second device connected to the first device via a transmission line; and control devices that are coupled to the first and second devices and control transmission and reception of a data signal and a timing signal between the first device and the second device, wherein the first device: determines a combination of phases with which a range of a voltage of determination as to whether the data signal is acquired is wider than a range of a voltage in which the data signal is acquired in other combinations of phases in information including combinations of phases in which a phase of the timing signal is specified for each data line in the transmission line, when the second device is operated according to the combinations of phases based on the information; and controls the second device based on the combination of the phases.

Abstract: A semiconductor device includes a column operation control circuit and a bank column address generation circuit. The column operation control circuit generates first and second bank address control signals as well as first and second bank control pulses from first and second bank selection signals in response to a synthesis control pulse such that data in a first bank and data in a second bank are simultaneously outputted in a first mode. The bank column address generation circuit generates first and second bank column addresses for selecting the first and second banks from a column address in response to the first and second bank address control signals.

Abstract: A memory system includes: a memory device including a three dimensional (3D) cell array, in which memory cells having the same height are coupled to a component word line by units of rows and component word lines having the same height are coupled to a group word line; and a controller suitable for controlling the memory device to perform a program operation with a program data into memory cells coupled to a data component word line selected from a plurality of component word line included in a single group word line and to perform a dummy program operation with dummy data into memory cells coupled to remaining dummy component word lines among the plurality of component word lines.

Abstract: A method for determining an optimal threshold of a nonvolatile memory device, the method including: reading a page from a nonvolatile memory device with a default threshold and attempting to hard decode the page using the default threshold; reading the page two more times with a predetermined offset voltage when the hard decoding fails and attempting to soft decode the page using the default threshold; approximating an empirical distribution of successfully decoded bits with a Gaussian distribution for each level; finding an intersection of the Gaussian distributions; and setting the intersection as a new reading threshold and reading the page again with the new reading threshold.

Abstract: A programmable artificial neuron emitting an output signal controlled by at least one control parameter, includes, for each control parameter, a capacitor and at least one block including at least one multiplexer configured to be in two states: a programming state and an operating state; a transistor; and a non-volatile resistive random access memory connected in series with the transistor, the capacitor and the resistive random access memory being mounted in parallel. The multiplexer is configured to, when it is in the programming state, set a resistance value of the resistive random access memory to set the value of the control parameter; when it is in the operating state, conserve the set resistance value of the resistive random access memory.

Abstract: Numerous embodiments are disclosed for an analog neuromorphic memory system for use in a deep learning neural network. The analog neuromorphic memory system comprises a plurality of vector-by-matrix multiplication arrays and various components shared by those arrays. The shared components include high voltage generation blocks, verify blocks, and testing blocks. The analog neuromorphic memory system optionally is used within a long short term memory system or a gated recurrent unit system.

Abstract: A computer system includes a main memory device and a processor. The main memory device includes a non-volatile memory and a memory controller to control the non-volatile memory. The processor is connected to the main memory device, executes an application program loaded to the non-volatile memory, and provides the memory controller with a command including context property information of an allocation region. The memory controller receives the command and controls the non-volatile memory based on the context property information.

Abstract: Systems, devices, and methods related to non-volatile memory are described. A non-volatile memory array may be employed as a main memory array for a system on a chip (SoC) or processor. A controller may interface between the non-volatile memory array and the SoC or processor using a protocol agnostic to characteristics of non-volatile memory operation including different page sizes or access time requirements, etc. A virtual memory bank at the controller may be employed to facilitate operations between the SoC or processor and the non-volatile memory array. The controller may be coupled with a buffer to facilitate rapid data operation, and the controller may be configured to selectively access data at the non-volatile array to account for data stored in the virtual memory bank or the buffer. The controller, the virtual memory bank, and the buffer may be configured on one chip separate from the SoC or processor.

Abstract: Fuse programming circuits, devices and methods. In some embodiments, a fuse circuit can include a fuse pad configured to receive a voltage, a fuse having a first end coupled to the fuse pad and a second end coupled to a switching element configured to enable a current to pass from the fuse pad to a ground potential.