Patents Examined by Mushfique Siddique
  • Patent number: 12154609
    Abstract: A magnetoresistive memory cell includes a first magnetic tunnel junction, a second magnetic tunnel junction and a metal layer. The first magnetic tunnel junction and the second magnetic tunnel junction each are disposed on the metal layer; the metal layer is configured to pass write current, a projection line of an easy axis of the first magnetic tunnel junction on a plane where the metal layer is located forms a first angle against a direction of the write current, and a projection line of an easy axis of the second magnetic tunnel junction on the plane where the metal layer is located forms a second angle against a direction opposite to the direction of the write current; the first angle and the second angle are all less than 90°; the first magnetic tunnel junction and the second magnetic tunnel junction are configured to pass read current.
    Type: Grant
    Filed: August 23, 2022
    Date of Patent: November 26, 2024
    Assignee: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
    Inventors: Guozhong Xing, Long Liu, Di Wang, Huai Lin, Ming Liu
  • Patent number: 12142326
    Abstract: A system includes a memory device and a processing device operatively coupled to the memory device. The processing device is to receive a programming command with respect to a set of memory cells coupled to one or more wordlines of the memory device. The processing device is further to determine a value of a metric reflecting a state of the set of memory cells. The processing device is further to determine a delay based on the value of the metric. The processing device is further to perform a programming operation with respect to the subset of memory cells. The programming operation includes the delay between a first pass of the programming operation and a second pass of the programming operation.
    Type: Grant
    Filed: May 24, 2022
    Date of Patent: November 12, 2024
    Assignee: Micron Technology, Inc.
    Inventors: Yu-Chung Lien, Zhenming Zhou
  • Patent number: 12136459
    Abstract: Implementations described herein relate to a mixed write cursor for block stripe writing. In some implementations, a memory system may include one or more components that are configured to construct a block stripe associated with a write cursor, where the block stripe is associated with memory blocks from respective memory dies of a set of memory dies. The one or more components may be configured to program the first data to a first one or more memory blocks of the block stripe following a first logical write direction associated a logical order of the set of memory dies. The one or more components may be configured to program the second data to a second one or more memory blocks of the block stripe following a second logical write direction associated with the logical order of the set of memory dies.
    Type: Grant
    Filed: August 31, 2022
    Date of Patent: November 5, 2024
    Assignee: Micron Technology, Inc.
    Inventor: Donghua Zhou
  • Patent number: 12136462
    Abstract: A storage system receives a request to read data that is located in a wordline undergoing a program operation. Instead of waiting for the program operation to complete, which would increase read latency, the storage system aborts the program operation and reconstructs the data from successfully-programmed memory cells in the wordline and from data latches associated with unsuccessfully-programmed memory cells in the wordline. The reconstructed data is then sent to the host. The program abort command can be similar to one used to provide a graceful shutdown in a power-loss situation.
    Type: Grant
    Filed: March 7, 2022
    Date of Patent: November 5, 2024
    Assignee: Sandisk Technologies, Inc.
    Inventors: Sergey Anatolievich Gorobets, Alan Bennett
  • Patent number: 12137552
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first gate structure, a second gate structure, and a first active region. The first gate structure extends along a first direction and is electrically connected to a first transistor. The second gate structure extends along the first direction and is electrically connected to a second transistor. The first active region extends along a second direction different from the first direction and across the first gate structure and the second gate structure. The first gate structure and the first active region collaboratively form a first fuse element. The second gate structure and the first active region collaboratively form a second fuse element.
    Type: Grant
    Filed: December 8, 2021
    Date of Patent: November 5, 2024
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventor: Wu-Der Yang
  • Patent number: 12131772
    Abstract: A three dimension memory device, such as an AND-type memory, includes a memory cell tile, multiple source line switches, multiple first bit line switches to fourth bit line switches. The memory cell tile is divided into a first and a second memory cell sub-tiles. The first bit line switches are respectively coupled to multiple first bit lines of a first part of the first memory cell sub-tile. The second bit line switches are respectively coupled to multiple second bit lines of a second part of the first memory cell sub-tile. The third bit line switches are respectively coupled to multiple third bit lines of a first part of the second memory cell sub-tile. The fourth bit line switches are respectively coupled to multiple fourth bit lines of a second part of the second memory cell sub-tile.
    Type: Grant
    Filed: May 23, 2022
    Date of Patent: October 29, 2024
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Teng-Hao Yeh, Hang-Ting Lue, Shang-Chi Yang, Fu-Nian Liang, Ken-Hui Chen, Chun-Hsiung Hung
  • Patent number: 12120878
    Abstract: An integrated circuit memory includes a first memory block and an adjacent second memory block. The first memory block comprises a first memory pillar around which a first memory cell is formed. The second memory block comprises a second memory pillar around which a second memory cell is formed. An isolation or slit area between the first and second memory blocks electrically isolates the first and second memory blocks. In an example, the slit area comprising a slit pillar around which no memory cells are formed. The slit pillar is a dummy pillar, and insulator material electrically isolates the slit pillar from a Word Line (WL) through which it passes. The isolation layer electrically can also isolate a (WL) of the first memory block from a corresponding WL of the second memory block. In an example, the slit pillar and the memory pillars have at least in part similar structures.
    Type: Grant
    Filed: February 8, 2020
    Date of Patent: October 15, 2024
    Assignee: Intel Corporation
    Inventors: Deepak Thimmegowda, Brian J. Cleereman, Srivardhan Gowda, Jui-Yen Lin, Liu Liu, Krishna Parat, Jong Sun Sel, Baosuo Zhou
  • Patent number: 12112822
    Abstract: A multi-channel memory device includes N first memory blocks, a first redundancy memory block, and N first interface circuits. Each of the first interface circuits is coupled to two of the first memory blocks and the first redundancy memory block. The first interface circuits respectively select N first selected memory blocks in the first memory block and the first redundancy memory block according to a plurality of first selection signals, where N is a positive integer greater than 1.
    Type: Grant
    Filed: September 6, 2022
    Date of Patent: October 8, 2024
    Assignee: Winbond Electronics Corp.
    Inventor: Chih-Feng Lin
  • Patent number: 12114473
    Abstract: Semiconductor devices are provided. A write port circuit is configured to perform a write function according to the write word line and the first and second write bit lines. The first read port circuit is configured to perform first read function according to the first read bit line and the first read word line. The second read port circuit is configured to perform second read function according to the second read bit line and the second read word line. The transistors of the first and second read port circuits share a first active structure extending in the first direction. The first read bit line and the second read bit line extend in the first direction in a first metallization layer, and the first write bit line and the second write bit line extend in the first direction in a second metallization layer over the first metallization layer.
    Type: Grant
    Filed: May 31, 2022
    Date of Patent: October 8, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventor: Jhon-Jhy Liaw
  • Patent number: 12106818
    Abstract: Examples described herein relate to a device that includes: a first power rail to provide a signal from a power source to a reference supply voltage pin of a memory controller; a second power rail to provide a signal from the power source to an output buffer pin of the memory controller and to an output buffer pin of a central processing unit (CPU). In some examples, the second power rail is separate from the first power rail, during a high power state, the power source is to supply a same voltage to each of the reference supply voltage pin, the output buffer pin of the memory controller, and the output buffer pin of the CPU, and during a connected standby state, the power source is to reduce voltage provided to the output buffer pin of the memory controller and the output buffer pin of the CPU using the second power rail and maintain a voltage provided to the reference supply voltage pin.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: October 1, 2024
    Assignee: Intel Corporation
    Inventors: Aiswarya M. Pious, Raji James, Phani K. Alaparthi, George Vergis, Bill Nale, Konika Ganguly
  • Patent number: 12100441
    Abstract: A readout circuit architecture and a sense amplification circuit are provided. The readout circuit architecture includes: a readout amplification unit including a first P-type transistor and a second P-type transistor; and a first offset compensation unit including a first offset compensation transistor and a second offset compensation transistor. The first P-type transistor is arranged in a first area and the second P-type transistor is arranged in a second area. When the first area and the second area are arranged at interval in a first direction, the first offset compensation transistor and the second offset compensation transistor are arranged in a third area located between the first area and the second area. When the first area and the second area are arranged adjacently in the first direction, the first offset compensation transistor is arranged in a fourth area and the second offset compensation transistor is arranged in a fifth area.
    Type: Grant
    Filed: June 9, 2022
    Date of Patent: September 24, 2024
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Guifen Yang, Sungsoo Chi
  • Patent number: 12094514
    Abstract: A memory device coupled to a memory controller and including a memory array and an access circuit is provided. The memory array includes a plurality of cells. Each of the cells is coupled to a word-line. The access circuit is coupled between the memory controller and the memory array. In a normal mode, the access circuit executes a refresh action for the cells which are coupled to at least one word-line in response to the memory controller outputting an auto-refresh command. In a standby mode, the access circuit selects one of the word-lines and determines whether to execute the refresh action for the cells coupled to the selected word-line according to the retention capability of the selected word-line at regular time intervals.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: September 17, 2024
    Assignee: WINBOND ELECTRONICS CORP.
    Inventor: Chih-Chiang Lai
  • Patent number: 12094535
    Abstract: A nonvolatile memory device includes a memory cell array and a control circuit. The memory cell array includes a plurality of word-lines, a plurality of memory cells provided in a plurality of channel holes and a word-line cut region extending in a first horizontal direction and dividing the word-lines into a plurality of memory blocks. A plurality of target memory cells coupled to each of the plurality of word-lines are grouped into outer cells and inner cells based on a location index of each of the plurality of memory cells. The control circuit controls a program operation on target memory cells coupled to a target word-line of the plurality of word-lines such that each of the outer cells stores a first number of bits and each of the inner cells stores a second number of bits. The second number is a natural number greater than the first number.
    Type: Grant
    Filed: July 5, 2022
    Date of Patent: September 17, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun Chu Oh, Junyeong Seok, Younggul Song
  • Patent number: 12094521
    Abstract: A memory device includes a memory cell that stores data. The memory device also includes a pair of digit lines that carry the data from the memory cell. The memory device further includes a sense amplifier that senses and amplifies voltages received at the pair of digit lines. The memory device also includes a replica sense amplifier that generates a replica common mode voltage associated with a common mode voltage of the pair of digit lines.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: September 17, 2024
    Assignee: Micron Technology, Inc.
    Inventor: Ki-Jun Nam
  • Patent number: 12087349
    Abstract: A storage device includes: a controller that exchanges data with a host through an interface; memory devices that store the data; a power supply circuit that outputs internal voltages, required for the controller and the memory devices, using an external voltage received through the interface; a distribution circuit that provides an operating voltage to the memory devices; and a discharge circuit including a first comparator that compares a first internal voltage, among the internal voltages, with a reference voltage and a second comparator that compares a second internal voltage, different from the first internal voltage, with the reference voltage, and including an operating circuit that computes an output of the first comparator and an output of the second comparator to output a discharge control signal determining whether the operating voltage has been discharged.
    Type: Grant
    Filed: July 12, 2022
    Date of Patent: September 10, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoungeun Lee, Hyunjoon Yoo, Seunghan Lee
  • Patent number: 12087376
    Abstract: The present technology relates to an electronic device. According to an embodiment of the present disclosure, a memory device may include a plurality of memory cells connected to each word line, a peripheral circuit configured to perform a program operation on memory cells that are connected to a selected word line, and a control logic configured to control the peripheral circuit to perform the program operation on the memory cells that are connected to the selected word line after performing a pre-program operation that increases a threshold voltage of over-erasure cells, among memory cells that are connected to an adjacent word line, having a threshold voltage of an over-erasure state that is lower than a threshold voltage of an erasure state, to the threshold voltage of the erasure state, wherein the adjacent word line is a word line that is next to the selected word line.
    Type: Grant
    Filed: July 12, 2022
    Date of Patent: September 10, 2024
    Assignee: SK hynix inc.
    Inventor: Jae Woong Kim
  • Patent number: 12080337
    Abstract: A local amplifying circuit, a data readout method and a memory are provided. The local amplifying circuit includes: write control transistors, configured to connect a global data line to a local data line based on a write enable signal; column selection transistors, configured to connect a bit line to the local data line based on a column selection signal; a first control NMOS transistor, having a gate connected to the local data line, one of a source and a drain being connected to the global data line and the other being connected to a corresponding read control transistor; a second control NMOS transistor, having a gate connected to a complementary local data line, one of a source and a drain being connected to a complementary global data line and the other being connected to a corresponding read control transistor.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: September 3, 2024
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventor: Ying Wang
  • Patent number: 12073870
    Abstract: Methods, systems, and devices for sense amplifier with digit line multiplexing are described. A method includes precharging an input and an output of an amplifier stage of a sense component to a first voltage based on a read operation associated with a memory cell. The method includes precharging a first side and a second side of a latch stage of the sense component to the first voltage based on precharging the output of the amplifier stage to the first voltage, the latch stage coupled with the amplifier stage. The method may also include coupling a second voltage from a digit line associated with the memory cell to the input of the amplifier stage, the amplifier stage generating a third voltage on the output based on coupling the second voltage to the input, and the latch stage latching a logic value associated with the memory cell based on the third voltage.
    Type: Grant
    Filed: June 30, 2023
    Date of Patent: August 27, 2024
    Assignee: Micron Technology, Inc.
    Inventors: Eric Carman, Daniele Vimercati
  • Patent number: 12073873
    Abstract: Exemplary methods, apparatuses, and systems include allotting an initial amount of volatile memory to a write buffer. The write buffer stores batches of data to be written to non-volatile memory. In response to detecting a trigger to update the write buffer configuration, the volatile memory allotted to the write buffer is reduced.
    Type: Grant
    Filed: August 31, 2021
    Date of Patent: August 27, 2024
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Karl D. Schuh, William Richard Akin
  • Patent number: 12073866
    Abstract: An example method of two-stage voltage calibration upon power-up of a memory device comprises: identifying a set of memory pages that have been programmed within a time window; responsive to detecting a power up event, performing a first calibration operation with respect to the set of memory pages to determine a first value of a data state metric; identifying, among a plurality of voltage offset bins, a first voltage offset bin corresponding to the first value of the data state metric; storing, in a temporary metadata table, a first record associating the set of memory pages with the first voltage offset bin; performing a second calibration operation with respect to the set of memory pages to determine a second value of the data state metric, wherein a second accuracy of the second calibration operation exceeds a first accuracy of the first calibration operation; identifying, among a plurality of voltage offset bins, a second voltage offset bin corresponding to the second value of the data state metric; and
    Type: Grant
    Filed: August 8, 2022
    Date of Patent: August 27, 2024
    Assignee: Micron Technology, Inc.
    Inventors: Steven Michael Kientz, Chia-Yu Kuo