Abstract: A semiconductor memory is provided. The memory includes: a memory array; a row address processing unit configured to output a row address; a bank address processing unit configured to output a bank address; a column address processing unit configured to output a column address; and a mapping factor generating unit, configured to generate a mapping factor, wherein an output of the mapping factor generating unit is coupled to at least one of an output of the row address processing unit, an output of the bank address processing unit, and an output of the column address processing unit, and the output of the mapping factor generating unit is further coupled to the memory array, and wherein the memory array receives a result from logical processing performed on the mapping factor and at least one of the row address, the bank address, and the column address. The technical solutions of the embodiments of the present invention can improve the security, service life and reliability of the semiconductor memory.

Abstract: In some examples, a subword driver block of a memory device includes a first active region and a second active region adjacent to each other. The first active region forms drains/sources of a first and second transistors in a first region; the second active region forms drains/sources of a third and fourth transistors in a second region, where the first and second regions are adjacent to each other. The first, second, third and fourth transistors are coupled to a common non-active potential via a shared contact overlaid over a merged region between the first and second regions. The first and second active regions may comprise N+ diffusion materials.

Abstract: A dynamic random-access memory array includes a plurality of memory cells and sensor cells physical arranged in a row. The sensor cells include a transistor and a capacitor having an input terminal connected to a first non-gate terminal of the transistor. A wordline is connected to transistor gates of both the memory cells and sensor cells in the row. A sensor amplifier has inputs connected to the sensor cell, a high voltage reference line, and a low voltage reference line, and an output in communication with a row refresh circuit. If the sensor amplifier detects that the sensor cell voltage falls outside of the range of the high and low voltage reference lines, then a trigger signal is output to request that the row refresh circuit perform a priority row refresh of the memory cells and the sensor cell in the row.

Abstract: Tracking circuitry may be used to determine if commands and/or command sequences include illegal commands and/or illegal command sequences. If the commands and/or command sequences include illegal commands and/or illegal command sequences, the tracking circuitry may activate signals that prevent execution of the commands and/or notice of the detected illegal commands and/or command sequences.

Abstract: Aspects of the invention include a first pull-down device and a second pull-down device, wherein a first drain terminal is connected to a second source terminal, and wherein a first gate terminal is connected to a true read local bitline, wherein a second drain terminal is connected to a compliment read local bit line, and wherein a second gate terminal is connected to a true write global bitline, a third pull-down device and a fourth pull-down device, wherein a third source terminal is connected to the voltage supply, wherein a third drain terminal is connected to a fourth source terminal, and wherein a third gate terminal is connected to the compliment read local bitline, and wherein a fourth drain terminal is connected to the true read local bitline, and wherein a fourth gate terminal is connected to a compliment write global bit line.

Abstract: A memory device includes bit lines, and a cell array including strings, each of which includes memory cells, a select cell coupled to a respective one of the bit lines, and a dummy cell between the select cell and the memory cells. The memory device also includes a select line coupled to the select cells, a dummy word line coupled to the dummy cells, word lines each coupled to a respective row of the memory cells, and a controller coupled to the cell array. The controller is configured to drive a voltage on the dummy word line from a first level to a second level lower than the first level. The controller is also configured to drive a voltage on the select line from the first level to the second level, such that the voltage on the select line reaches the second level after the voltage on the dummy word line reaches the second level.

Abstract: An arithmetic device includes an auto-command/address generation circuit, a first data storage circuit, and a second data storage circuit. The auto-command/address generation circuit generates an auto-load selection signal that activates an auto-load operation based on a level of a power source voltage. In addition, the auto-command/address generation circuit generates an auto-load command for the auto-load operation. The first data storage circuit outputs look-up table data, to which an activation function is applied, based on the auto-load command. The second data storage circuit stores the look-up table data, output from the first data storage circuit, based on the auto-load command.

Abstract: Methods, systems, and devices for cell data bulk reset are described. In some examples, a logic state (e.g., a first logic state) may be written to one or more memory cells based on an associated memory device transitioning power states. To write the first logic state to the memory cells, a first subset of digit lines may be driven to a first voltage and a plate may be driven to a second voltage. While the digit lines and plate are driven to the respective voltages, one or more word lines may be driven to the second voltage. In some instances, the word lines may be driven to the second voltage based on charge sharing occurring between adjacent word lines.

Abstract: A memory device includes a memory cell array connected to a plurality of wordlines and a plurality of bitlines; a row decoder configured to select a wordline, among the plurality of wordlines, in response to a row address; a column decoder configured to corresponding bitlines, among the plurality of bitlines, in response to a column address; a sense amplification circuit having a plurality of amplifiers connected to the selected corresponding bitlines; a row hammer detector configured to generate a refresh row address when the number of accesses to a row corresponding to the row address is a multiple of a predetermined value; and a refresh controller configured to perform a refresh operation on a row corresponding to the refresh row address. The row corresponding to the refresh row address is disposed adjacent to the row corresponding to the row address.

Abstract: A semiconductor memory device includes: a memory cell array including banks; a command/address buffer receiving a command/address based on a system dock; a data input/output circuit inputting/outputting data based on a data clock; a mode control circuit generating mode selection signals indicating different latencies according to a burst length signal and operation information on a first operation mode differentiated based on a ratio of the data dock to the system clock, and a second operation mode differentiated based on a bank mode; and a latency setting circuit setting a latency according to an activated one of the mode selection signals, generating an internal write command by delaying a write command at least by the set latency according to the system dock during a write operation, and generating an internal read command by delaying a read command by the set latency according to the system dock during a read operation.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM). The MRAM comprises a plurality of MRAM cells including a first type MRAM cell and a second type MRAM cell. Each of the plurality of MRAM cells includes a magnetic tunneling junction (MTJ) layer including a pinned magnetic layer, a tunneling barrier layer and a free magnetic layer. A size of the MTJ film stack of the first type MRAM cell is different from a size of the MTJ film stack of the second type MRAM cell. In one or more of the foregoing and following embodiments, a width of the MTJ film stack of the first type MRAM cell is different from a width of the MTJ film stack of the second type MRAM cell.

Abstract: A singled ended current sense amplifier circuit including an input stage having a bitline node, a sense node and a feedback circuit comprising a feedback inverter configured to provide an amplified voltage from the bitline node. The feedback inverter may include first and second NMOS transistors serially connected to a feedback node and first and second PMOS transistors serially connected to the feedback node. The feedback circuit may include a third NMOS transistor having a gate terminal connected to the feedback node and a drain terminal connected to the sense node. The input stage may include a third PMOS transistor operating as a current source to generate a sense current which flows in a current sensing path between the sense node and the bitline node. The input stage may act as a regulator to keep the voltage at the bitline node constant.

Abstract: Disclosed herein is an integrated circuit including multiple magnetic tunneling junction (MTJ) cells coupled to a static random access memory (SRAM). In one aspect, the integrated circuit includes a SRAM having a first port and a second port, and a set of pass transistors coupled to the first port of the SRAM. In one aspect, the integrated circuit includes a set of MTJ cells, where each of the set of MTJ cells is coupled between a select line and a corresponding one of the set of pass transistors.

Abstract: A memory device includes a command interface configured to receive a command from a host device. The memory device also includes a command shifter configured to receive the command. The command shifter includes a plurality of stages coupled in series and configured to delay the command. The command shifter comprises selection circuitry configured to receive the command and to select an insertion stage of the plurality of stages for the command. The selection circuitry is configured to select the insertion stage as a location to insert the command. The selected insertion stage is selected to control a duration of delay in the command shifter. The selection of the insertion stage is based at least in part on a path delay between a clock and a data pin of the memory device.

Abstract: A semiconductor memory device includes a memory cell including a switching element and a resistance change element. A first circuit supplies a constant current to the memory cell for an amount of time and a second circuit applies a constant voltage to the memory cell for an amount of time. The semiconductor memory device places the memory cell into an ON state by applying, while applying a first current to the memory cell by the first circuit, a first voltage to the memory cell by the second circuit and performs readout on the memory cell in the ON state by the first current.

Abstract: Methods, systems, and devices for timing signal calibration for a memory device are described. In some memory devices, operations for accessing memory cells may be performed with timing that is asynchronous with an input signal. To support asynchronous timing, a timing signal generation component of a memory device may include delay components that support generating a timing signal having aspects that are delayed relative to an input signal. Delay components may have characteristics that are sensitive to fabrication or operational variability, such that timing signals may also be affected by such variability. In accordance with examples as disclosed herein, a memory device may include delay components, associated with access operation timing signal generation, that are configured to be selectively enabled or disabled based on a calibration operation of the memory device, which may improve an ability of the memory device to account for various sources of timing signal variability.

Abstract: Some embodiments include an integrated assembly having a deck over a base, and having memory cells supported by the deck. Each of the memory cells includes a capacitive unit and a transistor. The individual capacitive units of the memory cells each have a storage node electrode, a plate electrode, and a capacitor dielectric material between the storage node electrode and the plate electrode. A reference-voltage-generator includes resistive units supported by the deck. The resistive units are similar to the memory cells but include interconnecting units in place of the capacitive units. The interconnecting units of some adjacent resistive units are shorted to one another.

Abstract: Numerous embodiments of circuitry for a set-while-verify operation and a reset-while verify operation for resistive random access memory cells are disclosed. In one embodiment, a set-while-verify circuit for performing a set operation on a selected RRAM cell in the array applies a combination of voltages or current to a bit line, word line, and source line associated with the selected RRAM cell and stops said applying when the set operation is complete. In another embodiment, a reset-while-verify circuit for performing a reset operation on a selected RRAM cell in the array applies a combination of voltages or current to a bit line, word line, and source line associated with the selected RRAM cell and stops said applying when the reset operation is complete.

Abstract: Methods, systems, and devices for varying a time average for feedback of a memory system are described. An apparatus may include a voltage supply, a memory array, and a regulator coupled with the voltage supply and memory array and configured to supply a first voltage received from the voltage supply to the memory array. The apparatus may also include a voltage sensor configured to measure a second voltage of the memory array and a digital feedback circuit coupled with the memory array and regulator and configured to generate feedback comprising information averaged over a duration based at least in part on the second voltage measured by the voltage sensor and to transmit an analog signal to the regulator based at least in part on the feedback.

Abstract: In a method of counting the number of memory cells in a nonvolatile memory device, a measurement range and a plurality of measurement intervals of a measurement window for a cell counting operation are set to a first range and a plurality of first intervals, respectively. The plurality of measurement intervals are included in the measurement range. A first sensing operation is performed on first memory cells included in a first region of a memory cell array based on the measurement window. A first shifting operation for shifting the measurement window is performed while a width of the measurement range and a width of each of the plurality of measurement intervals are maintained. A second sensing operation is performed on the first memory cells based on the measurement window shifted by the first shifting operation. A final count value for the first memory cells is obtained based on a result of the first sensing operation and a result of the second sensing operation.