Patents Examined by Nadine G. Norton
  • Patent number: 10703935
    Abstract: Provided is a polishing composition for a silicon oxide film that can improve the speed of polishing a silicon oxide film. In one or more embodiments, a polishing composition for a silicon oxide film contains: water; a cerium oxide particle; and a compound having in its molecule an amino group and at least one acid group selected from a sulfonic acid group and a phosphonic acid group. In the polishing composition, [the number of moles of the acid group contained in the compound]/[total surface area of the cerium oxide particle] is in a range from 1.6×10?5 mol/m2 to 5.0×10?2 mol/m2.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: July 7, 2020
    Assignee: KAO CORPORATION
    Inventors: Haruhiko Doi, Koji Kinuta
  • Patent number: 10699900
    Abstract: Provided is a method for forming a thin film. The method for forming the thin film includes forming a first thin film having a first thickness with first crystallinity through an atomic layer deposition process and etching the first thin film by a predetermined thickness through an atomic layer etching process with respect to the first thin film to form a second thin film having a second thickness less than the first thickness.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: June 30, 2020
    Assignee: WONIK IPS CO., LTD.
    Inventors: Sang Jun Park, Tae Ho Jeon, Sang Jin Lee, Chang Hee Han, Tae Ho Kim
  • Patent number: 10685856
    Abstract: While a substrate is being rotated, the lower surface of a brush is moved along the upper surface of the substrate. The brush and a spray nozzle are moved upward from a takeoff position to a lower non-contact position so as to separate the lower surface of the brush from the upper surface of the substrate. The spray nozzle generates the droplets in a state where the brush and the spray nozzle are located in the lower non-contact position so as to make the droplets collide with the upper surface of the substrate, and then the droplets colliding with the upper surface of the substrate are discharged from a gap between the lower surface of the brush and the upper surface of the substrate while the droplets are being supplied to the lower surface of the brush.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: June 16, 2020
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Ryohei Hokaku, Junichi Ishii, Takashi Shinohara
  • Patent number: 10685839
    Abstract: There is provided a method for implementing and regulating patterning of a graphene film by ultraviolet photo-oxidation, including: implementing patterning of a graphene film micron structure pattern by using a xenon lamp excimer ultraviolet photo-oxidation vacuum apparatus and a hard mask; 2: controlling oxygen excitons, by applying a non-uniform magnetic field on the surface of the graphene film in a vertical direction, to move toward the graphene film in a direction of a magnetic field, so as to enhance the directivity of etching to the graphene film in the vertical direction, thereby improving patterning quality of the graphene film with micron-structure; and (3) by adjusting the intensity and direction of the magnetic field moving direction of the oxygen excitons is controlled, and the shape of the etched pattern structure of the graphene film is controlled, and thus controlling the patterning of the graphene film may be achieved.
    Type: Grant
    Filed: October 18, 2016
    Date of Patent: June 16, 2020
    Assignee: SHANGHAI JIAO TONG UNIVERSITY
    Inventors: Haihua Tao, Xianfeng Chen, Yixuan Wu, Shubin Su, Huan Yue, Hao Li
  • Patent number: 10643874
    Abstract: A substrate liquid processing apparatus includes a liquid processing unit, a processing liquid circulating line, and a boiling state detecting unit provided in a processing bath of the liquid processing unit. The controller controls a supply pump of the processing liquid circulating line based on a signal from the boiling state detecting unit, and adjusts a pressure of a supplied phosphoric acid aqueous solution in a flow path so as to adjust the boiling state of the phosphoric acid aqueous solution to a desired state.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: May 5, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Tanaka, Tsukasa Hirayama, Takao Inada
  • Patent number: 10617093
    Abstract: A milking system includes several milking devices, each having a milk-carrying part, a temporary milk storage vessel, a milk pipe system, a milk storage tank, and a main milk pipe, which connects the temporary milk storage vessel to the milk storage tank. The milking system includes a first cleaning device having at least one first cleaning liquid supply and at least a pump, which cleaning device is configured to clean at least the milk-carrying part of at least one milking device and a part of the milk pipe system which connects the milk-carrying part to the temporary milk storage vessel, by transferring cleaning liquid from the cleaning liquid supply through at least the milk-carrying part of the at least one milking device and through said part of the milk pipe system to the temporary milk storage vessel by pumping. The temporary milk storage vessel includes a main pump for transferring liquid from the temporary milk storage vessel through the main milk pipe in the direction of the milk storage tank.
    Type: Grant
    Filed: April 28, 2015
    Date of Patent: April 14, 2020
    Assignee: LELY PATENT N.V.
    Inventors: Ruben Alexander Van Tilburg, Dirk Dijkshoorn, Mattheus Jacob De Hullu
  • Patent number: 10615029
    Abstract: A method for manufacturing a device includes: providing a semiconductor substrate having an RF-device; providing a BEOL-layer stack on the first main surface of the semiconductor substrate; attaching a carrier structure to a first main surface of the BEOL-layer stack; removing a lateral portion of the semiconductor substrate which laterally adjoins the device region to expose a lateral portion of the second main surface of the BEOL-layer stack; and opening a contacting region of the BEOL-layer stack at the lateral portion of second main surface of the BEOL-layer stack.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: April 7, 2020
    Assignee: Infineon Technologies AG
    Inventors: Christoph Kadow, Uwe Seidel
  • Patent number: 10604443
    Abstract: A low reflectivity coating (20) is formed of a layer of carbon nanostructures (20) over a contact surface (14) of a substrate (10), from a spray incorporating the carbon nanostructures in suspension in a solvent. The carbon nanostructure layer provides a very low reflectivity coating which may be further enhanced by etching the outer surface of the coating. The layer may be etched for reduced reflectivity. Very low reflectivity coatings have been achieved.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: March 31, 2020
    Assignee: SURREY NANOSYSTEMS LIMITED
    Inventors: Nathan William March, Naigui Shang, Susana Bustos-Rodriguez, Ben Poul Jensen, Oliver Crossley
  • Patent number: 10607850
    Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: March 31, 2020
    Assignees: American Air Liquide, Inc., Air Liquide Electronics U.S. LP, L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Vijay Surla, Rahul Gupta, Hui Sun, Venkateswara R. Pallem, Nathan Stafford, Fabrizio Marchegiani, Vincent M. Omarjee, James Royer
  • Patent number: 10600654
    Abstract: An etching process method is provided that includes outputting a first high frequency power of a first frequency from a first high frequency power supply, and outputting a second high frequency power of a second frequency, which is lower than the first high frequency, from a second high frequency power supply in an cryogenic temperature environment where a substrate temperature is controlled to be less than or equal to ?35° C.; generating a plasma by adding a hydrocarbon gas containing at least 3 carbon atoms to an etching gas containing carbon, hydrogen, and fluorine; and etching a silicon oxide film or a laminated film made up of laminated layers of silicon-containing films having different compositions using the generated plasma.
    Type: Grant
    Filed: June 9, 2017
    Date of Patent: March 24, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Maju Tomura, Jin Kudo, Yoshinobu Ohya
  • Patent number: 10596537
    Abstract: A method for uniformly distributing a process liquid within a process vessel includes providing a process liquid to a fouling-resistant liquid distributor installed within a process vessel having a cross-sectional area; causing rotational movement of the fouling-resistant liquid distributor; uniformly distributing the process liquid over the cross-sectional area within the process vessel; and simultaneously self-rinsing the fouling-resistant liquid distributor with a portion of the process liquid during uniform distribution. A system is also disclosed which includes a supply of process fluid, a stationary conduit and a liquid distribution head attached to the conduit. The liquid distribution head is motive, powered by a fluid, and includes at least one process liquid delivery port. The at least one process liquid delivery port is configured to provide a +10° or greater angle of liquid coverage when the liquid distribution head is moving.
    Type: Grant
    Filed: July 18, 2014
    Date of Patent: March 24, 2020
    Assignee: Arkema France
    Inventors: Michael S. Decourcy, Christian Lacroix, Etienne Bastien
  • Patent number: 10593556
    Abstract: There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.
    Type: Grant
    Filed: July 19, 2017
    Date of Patent: March 17, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koichi Yatsuda, Takashi Hayakawa, Hiroshi Okuno, Reiji Niino, Hiroyuki Hashimoto, Tatsuya Yamaguchi
  • Patent number: 10588706
    Abstract: An accessory drive device includes a housing, a fluid inlet, a fluid outlet, a drive mechanism, and an output drive member. The output drive member may be driven by the drive mechanism and engage with an input drive member on a transmission mechanism of a surgical instrument. The drive mechanism may be configured to be driven by a motive force produced by fluid flowing through the housing from the inlet to the outlet, with the fluid being delivered by a fluid source of a reprocessing device. A portable, accessory drive device for a surgical instrument includes a portable housing to be removably coupled to a transmission mechanism of an instrument and a drive mechanism to drive an input drive member of the transmission mechanism. A method of reprocessing a surgical instrument includes converting a force associated with a flow of fluid for reprocessing to drive an instrument input drive member.
    Type: Grant
    Filed: August 1, 2014
    Date of Patent: March 17, 2020
    Assignee: INTUITIVE SURGICAL OPERATIONS, INC.
    Inventor: Timothy Allen Limon
  • Patent number: 10584497
    Abstract: Roof cleaning processes and associated systems are disclosed. A representative process includes dispensing a cleaning fluid on the roof, at least restricting the cleaning fluid from exiting the roof via a roof drain, and collecting the cleaning fluid from the roof and directing the cleaning fluid to a sanitary sewer. A representative system includes a pump coupleable to a source of water and configured to pressurize the water, a surface cleaner coupled to the pump with a water line to receive pressurized water, a vacuum source coupled to the surface cleaner with a vacuum line to remove wastewater produced by the surface cleaner, and a retainer configured to be removably attached to a building at least proximate to a roof of the building, the retainer being removably coupleable to the vacuum line and the water line to at least restrict movement of the vacuum line and the water line.
    Type: Grant
    Filed: September 28, 2015
    Date of Patent: March 10, 2020
    Assignee: Dri-Eaz Products, Inc.
    Inventors: Keith Studebaker, William Bruders, Dennis P. Bruders, Kevin J. Miller, Brett Bartholmey
  • Patent number: 10580661
    Abstract: A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.
    Type: Grant
    Filed: May 1, 2017
    Date of Patent: March 3, 2020
    Assignees: MATTSON TECHNOLOGY, INC., BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY, CO., LTD
    Inventor: Shawming Ma
  • Patent number: 10569313
    Abstract: A treatment head for cleaning a container that has a valve arrangement that includes a tappet that is configured to move relative to the treatment head's housing to open the valve arrangement and fluid channels leading into the container. A first channel of the fluid channels has an annular fluid channel section and surrounds the second channel. A flow twister is disposed in either the first channel or in a line connected to the first fluid-channel.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: February 25, 2020
    Assignee: KHS GmbH
    Inventor: Hilmar Fickert
  • Patent number: 10570522
    Abstract: A solution for selectively etching copper or a copper alloy from a microelectronic device, wherein the device simultaneously includes copper or a copper alloy and nickel-containing material, the solution being an etching solution for copper or a copper alloy comprising a chelating agent having an acid group in a molecule, hydrogen peroxide, and a surfactant having an oxyethylene chain in a molecule.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: February 25, 2020
    Assignee: ENTEGRIS, INC.
    Inventors: Yutaka Yoshida, Yukichi Koji
  • Patent number: 10557058
    Abstract: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, polyalkylene glycol, and at least one cationic polymer selected from the group consisting of allylamine polymers, diallylamine polymers, vinylamine polymers and ethyleneimine polymers.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: February 11, 2020
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Toshiaki Akutsu, Hisataka Minami, Tomohiro Iwano, Koji Fujisaki
  • Patent number: 10546753
    Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: January 28, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hideaki Yamasaki, Takamichi Kikuchi, Seishi Murakami
  • Patent number: 10541163
    Abstract: A technique to prevent reduction in throughput of a substrate processing apparatus. On the occurrence of an event disabling execution of a recipe by a processing unit, a different recipe executed by this processing unit may be used depending on the type of event having occurred. The type of event to occur and a substitute recipe that can take the place of a recipe being executed are associated in advance. On the occurrence of abnormality, it is determined whether or not a recipe being executed can be substituted by a different recipe. If the recipe can be substituted, it is determined whether or not the substitute recipe is contained in an unfinished job. If these conditions are satisfied, a substrate processing schedule is changed to execute the substitute recipe in this processing unit. If these conditions are not satisfied, substrate process in this processing unit is stopped.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: January 21, 2020
    Assignee: SCREEN Holdings Co., Ltd.
    Inventor: Masahiro Yamamoto