Abstract: A method of cleaning a tool for forming a semiconductor device includes heating a wafer comprising a ceramic material to heat at least the ceramic material, positioning the heated wafer on an electrostatic chuck of a tool for forming a semiconductor device such that deposits located proximate the heated wafer are heated to vaporize at least some of the deposits, and removing the vaporized deposits from the tool. Related methods of forming semiconductor devices, related systems, and related cleaning wafers are disclosed.

Abstract: A cavity is etched in a stack of layers which includes a first layer made of a first material and a second layer made of a second material. To etch the cavity, a first etch mask having a first opening is formed over the stack of layer. The stack of layers is then etched through the first opening to a depth located in the second layer. A second mask having a second opening, the dimensions of which are smaller, in top view, than the first opening, is formed over the stack of layer. The second opening is located, in top view, opposite the area etched through the first opening. The second layer is then etched through the second opening to reach the first layer. The etch method used is configured to etch the second material selectively over the first material.

Abstract: A semiconductor device is manufactured using a cleaning process. The cleaning process utilizes a semiconductor manufacturing tool that has a wet cleaning section and a plasma cleaning section. The semiconductor device is placed within a wet cleaning chamber within the wet cleaning section, where a wet cleaning process is performed. Once completed, and without breaking atmosphere, the semiconductor device is removed from the wet cleaning section and placed within a plasma cleaning chamber within the plasma cleaning section. A plasma clean is then performed.

Abstract: A pipeline pig (5) for cleaning pipelines (6) and/or for recovering products from a pipeline is disclosed. The pipeline pig (5) comprises at least one radiofrequency identification tag (4a, 4b) as a means for identification and for the sending, receiving and storing of data. The pipeline pig (5) may be used in pipeline systems used for the production of sterile food or pharmaceutical products.

Abstract: An example cement includes a naturally occurring silicate bound in an organic binder, a metal oxide, and a chemical activator. The chemical activator is in an effective amount, for dissolving the binder, at least in part, so that the silicate reacts with other components of the cement, the silicate participates in crystal growth; and the cement is a structural load bearing cement.

Abstract: To manufacture a liquid ejection head, a film having a lower surface free energy than a surface free energy of a substrate is first formed on an inner face of a liquid supply port. Next, a dry film to be a flow path forming member is attached to cover the surface of the substrate, and then a member to be an ejection orifice forming member is provided on the surface of the dry film.

Abstract: Disclosed is a dry etching method for etching a laminated film of silicon oxide layers and silicon nitride layers on a substrate. The dry etching method includes providing a mask on the laminated film, generating a plasma from a dry etching agent and etching the laminated film by the plasma through the mask under a bias voltage of 500 V or higher to form a through hole in the laminated film vertically to the layers, wherein the dry etching agent contains at least C3H2F4, an unsaturated perfluorocarbon represented by CxFy and an oxidizing gas, and wherein a volume of the unsaturated perfluorocarbon contained in the dry etching agent is 0.1 to 10 times a volume of the C3H2F4 contained in the dry etching agent.

Abstract: The invention relates to a control method for a secondary dust removal system in which a pipe network connects an induced draft fan to at least two suction points. The pipe network comprises a controllable exhaust air flap for each suction point, the position of said flap influencing the volumetric flow rate at the suction point. A mathematical model of the pipe network allows the method to energy-efficiently control the exhaust air flaps and the induced draft fan.

Abstract: Provided is a polishing composition for a silicon oxide film that can improve the speed of polishing a silicon oxide film. In one or more embodiments, a polishing composition for a silicon oxide film contains: water; a cerium oxide particle; and a compound having in its molecule an amino group and at least one acid group selected from a sulfonic acid group and a phosphonic acid group. In the polishing composition, [the number of moles of the acid group contained in the compound]/[total surface area of the cerium oxide particle] is in a range from 1.6×10?5 mol/m2 to 5.0×10?2 mol/m2.

Abstract: Provided is a method for forming a thin film. The method for forming the thin film includes forming a first thin film having a first thickness with first crystallinity through an atomic layer deposition process and etching the first thin film by a predetermined thickness through an atomic layer etching process with respect to the first thin film to form a second thin film having a second thickness less than the first thickness.

Abstract: While a substrate is being rotated, the lower surface of a brush is moved along the upper surface of the substrate. The brush and a spray nozzle are moved upward from a takeoff position to a lower non-contact position so as to separate the lower surface of the brush from the upper surface of the substrate. The spray nozzle generates the droplets in a state where the brush and the spray nozzle are located in the lower non-contact position so as to make the droplets collide with the upper surface of the substrate, and then the droplets colliding with the upper surface of the substrate are discharged from a gap between the lower surface of the brush and the upper surface of the substrate while the droplets are being supplied to the lower surface of the brush.

Abstract: There is provided a method for implementing and regulating patterning of a graphene film by ultraviolet photo-oxidation, including: implementing patterning of a graphene film micron structure pattern by using a xenon lamp excimer ultraviolet photo-oxidation vacuum apparatus and a hard mask; 2: controlling oxygen excitons, by applying a non-uniform magnetic field on the surface of the graphene film in a vertical direction, to move toward the graphene film in a direction of a magnetic field, so as to enhance the directivity of etching to the graphene film in the vertical direction, thereby improving patterning quality of the graphene film with micron-structure; and (3) by adjusting the intensity and direction of the magnetic field moving direction of the oxygen excitons is controlled, and the shape of the etched pattern structure of the graphene film is controlled, and thus controlling the patterning of the graphene film may be achieved.

Abstract: A substrate liquid processing apparatus includes a liquid processing unit, a processing liquid circulating line, and a boiling state detecting unit provided in a processing bath of the liquid processing unit. The controller controls a supply pump of the processing liquid circulating line based on a signal from the boiling state detecting unit, and adjusts a pressure of a supplied phosphoric acid aqueous solution in a flow path so as to adjust the boiling state of the phosphoric acid aqueous solution to a desired state.

Abstract: A milking system includes several milking devices, each having a milk-carrying part, a temporary milk storage vessel, a milk pipe system, a milk storage tank, and a main milk pipe, which connects the temporary milk storage vessel to the milk storage tank. The milking system includes a first cleaning device having at least one first cleaning liquid supply and at least a pump, which cleaning device is configured to clean at least the milk-carrying part of at least one milking device and a part of the milk pipe system which connects the milk-carrying part to the temporary milk storage vessel, by transferring cleaning liquid from the cleaning liquid supply through at least the milk-carrying part of the at least one milking device and through said part of the milk pipe system to the temporary milk storage vessel by pumping. The temporary milk storage vessel includes a main pump for transferring liquid from the temporary milk storage vessel through the main milk pipe in the direction of the milk storage tank.

Abstract: A method for manufacturing a device includes: providing a semiconductor substrate having an RF-device; providing a BEOL-layer stack on the first main surface of the semiconductor substrate; attaching a carrier structure to a first main surface of the BEOL-layer stack; removing a lateral portion of the semiconductor substrate which laterally adjoins the device region to expose a lateral portion of the second main surface of the BEOL-layer stack; and opening a contacting region of the BEOL-layer stack at the lateral portion of second main surface of the BEOL-layer stack.

Abstract: A low reflectivity coating (20) is formed of a layer of carbon nanostructures (20) over a contact surface (14) of a substrate (10), from a spray incorporating the carbon nanostructures in suspension in a solvent. The carbon nanostructure layer provides a very low reflectivity coating which may be further enhanced by etching the outer surface of the coating. The layer may be etched for reduced reflectivity. Very low reflectivity coatings have been achieved.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: An etching process method is provided that includes outputting a first high frequency power of a first frequency from a first high frequency power supply, and outputting a second high frequency power of a second frequency, which is lower than the first high frequency, from a second high frequency power supply in an cryogenic temperature environment where a substrate temperature is controlled to be less than or equal to ?35° C.; generating a plasma by adding a hydrocarbon gas containing at least 3 carbon atoms to an etching gas containing carbon, hydrogen, and fluorine; and etching a silicon oxide film or a laminated film made up of laminated layers of silicon-containing films having different compositions using the generated plasma.

Abstract: A method for uniformly distributing a process liquid within a process vessel includes providing a process liquid to a fouling-resistant liquid distributor installed within a process vessel having a cross-sectional area; causing rotational movement of the fouling-resistant liquid distributor; uniformly distributing the process liquid over the cross-sectional area within the process vessel; and simultaneously self-rinsing the fouling-resistant liquid distributor with a portion of the process liquid during uniform distribution. A system is also disclosed which includes a supply of process fluid, a stationary conduit and a liquid distribution head attached to the conduit. The liquid distribution head is motive, powered by a fluid, and includes at least one process liquid delivery port. The at least one process liquid delivery port is configured to provide a +10° or greater angle of liquid coverage when the liquid distribution head is moving.

Abstract: An accessory drive device includes a housing, a fluid inlet, a fluid outlet, a drive mechanism, and an output drive member. The output drive member may be driven by the drive mechanism and engage with an input drive member on a transmission mechanism of a surgical instrument. The drive mechanism may be configured to be driven by a motive force produced by fluid flowing through the housing from the inlet to the outlet, with the fluid being delivered by a fluid source of a reprocessing device. A portable, accessory drive device for a surgical instrument includes a portable housing to be removably coupled to a transmission mechanism of an instrument and a drive mechanism to drive an input drive member of the transmission mechanism. A method of reprocessing a surgical instrument includes converting a force associated with a flow of fluid for reprocessing to drive an instrument input drive member.