Abstract: There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.

Abstract: Roof cleaning processes and associated systems are disclosed. A representative process includes dispensing a cleaning fluid on the roof, at least restricting the cleaning fluid from exiting the roof via a roof drain, and collecting the cleaning fluid from the roof and directing the cleaning fluid to a sanitary sewer. A representative system includes a pump coupleable to a source of water and configured to pressurize the water, a surface cleaner coupled to the pump with a water line to receive pressurized water, a vacuum source coupled to the surface cleaner with a vacuum line to remove wastewater produced by the surface cleaner, and a retainer configured to be removably attached to a building at least proximate to a roof of the building, the retainer being removably coupleable to the vacuum line and the water line to at least restrict movement of the vacuum line and the water line.

Abstract: A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.

Abstract: A treatment head for cleaning a container that has a valve arrangement that includes a tappet that is configured to move relative to the treatment head's housing to open the valve arrangement and fluid channels leading into the container. A first channel of the fluid channels has an annular fluid channel section and surrounds the second channel. A flow twister is disposed in either the first channel or in a line connected to the first fluid-channel.

Abstract: A solution for selectively etching copper or a copper alloy from a microelectronic device, wherein the device simultaneously includes copper or a copper alloy and nickel-containing material, the solution being an etching solution for copper or a copper alloy comprising a chelating agent having an acid group in a molecule, hydrogen peroxide, and a surfactant having an oxyethylene chain in a molecule.

Abstract: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, polyalkylene glycol, and at least one cationic polymer selected from the group consisting of allylamine polymers, diallylamine polymers, vinylamine polymers and ethyleneimine polymers.

Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.

Abstract: A technique to prevent reduction in throughput of a substrate processing apparatus. On the occurrence of an event disabling execution of a recipe by a processing unit, a different recipe executed by this processing unit may be used depending on the type of event having occurred. The type of event to occur and a substitute recipe that can take the place of a recipe being executed are associated in advance. On the occurrence of abnormality, it is determined whether or not a recipe being executed can be substituted by a different recipe. If the recipe can be substituted, it is determined whether or not the substitute recipe is contained in an unfinished job. If these conditions are satisfied, a substrate processing schedule is changed to execute the substitute recipe in this processing unit. If these conditions are not satisfied, substrate process in this processing unit is stopped.

Abstract: A substrate-treating apparatus includes a liquid-providing part, a first liquid-removing knife and a returning part. The liquid-providing part provides a first liquid chemical for cleaning a substrate that includes a metal pattern and a photoresist pattern on the metal pattern, and for removing an etchant that remains on the substrate. The first liquid-removing knife sprays a second liquid chemical in a direction inclined and opposite to a returning direction of the substrate, so as to remove the first liquid chemical, the first liquid chemical including a metal precipitate. The returning part returns the substrate from the liquid-providing part toward the first liquid-removing knife in the returning direction.

Abstract: The present disclosure describes an exemplary etch process in a reactor that includes a shower head and an electrostatic chuck configured to receive a radio frequency (RF) power. The shower head includes a top plate and a bottom plate with one or more gas channels that receive incoming gases. The method can include (i) rotating the top plate or the bottom plate of the shower head to a first position to allow a gas to flow through the shower head; (ii) performing a surface modification cycle that includes: applying a negative direct current (DC) bias voltage to the shower head, applying an RF power signal to the wafer chuck; and (iii) performing an etching cycle that includes: removing the negative DC bias voltage from the shower head and lowering the RF power signal applied to the wafer chuck.

Abstract: The present invention relates to the adhesional pretreatment of plastics surface prior to their metallization by chemical or electrochemical methods and may be used in those industrial fields where decorative or functional metallic coatings on top of the plastic surfaces are needed. The purpose of the proposed invention is a high-quality adhesional pretreatment of plastic surface prior to metallization. The purpose is achieved by treating the plastic before to etch it 5-15 min at 50-70° C. in the alcaline permanganic solution containing 1-3M NaOH and 0.1-0.5 M permanganate ions and acidic permanganic etching solution additionally contains 0.5-8.0 M of copper nitrate and the etching is performed at room temperature during 5-60 min.

Abstract: A method of cleaning a wafer in semiconductor fabrication is provided. The method includes cleaning a wafer using a wafer scrubber. The method further includes moving the wafer scrubber into an agitated cleaning fluid. The method also includes creating a contact between the wafer scrubber and a cleaning stage in the agitated cleaning fluid. In addition, the method includes cleaning the wafer or a second wafer by the wafer scrubber after the wafer scrubber is cleaned by the agitated cleaning fluid.

Abstract: Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminium oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate.

Abstract: A method of etching a film of a workpiece, which includes: measuring a second flow rate of a first gas based on an increase rate of an internal pressure of a first chamber in a state in which a valve is closed and the first gas is supplied into the first chamber at a first flow rate adjusted by a flow rate controller, and calibrating the flow rate controller using the measured second flow rate; supplying a second gas into the first chamber; exhausting the first chamber; supplying a mixed gas of the first and second gases into the first chamber with the workpiece not mounted on a stage; forming a reaction product from the film by supplying the mixed gas into the first chamber with the workpiece mounted on the stage; and removing the reaction product by heating the workpiece with the workpiece accommodated in a second chamber.

Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.

Abstract: A method includes etching a first oxide layer in a wafer. The etching is performed in an etcher having a top plate overlapping the wafer, and the top plate is formed of a non-oxygen-containing material. The method further includes etching a nitride layer underlying the first oxide layer in the etcher until a top surface of a second oxide layer underlying the nitride layer is exposed. The wafer is then removed from the etcher, with the top surface of the second oxide layer exposed when the wafer is removed.

Abstract: Disclosed are data storage devices and methods of manufacturing the same. The methods may include providing a substrate including a cell region and a peripheral circuit region, forming a data storage layer on the cell region and the peripheral circuit region of the substrate, selectively forming a mask layer on a portion of the data storage layer that is formed on the peripheral circuit region, forming a top electrode layer on the data storage layer and the mask layer, patterning the top electrode layer to form a plurality of top electrodes on the cell region, and patterning the data storage layer using the plurality of top electrodes as an etch mask to form a plurality of data storage parts on the cell region. While patterning the top electrode layer, the mask layer on the peripheral circuit region may serve as an etch stop layer.

Abstract: A dual function cleaning nozzle assembly for prewashing kitchen utensils. The cleaning nozzle includes air and fluid inlets. The air inlet is coupled to an air conduit which includes a first control valve, and the fluid inlet is coupled to a fluid conduit which includes a second control valve. A lever or button is coupled to a first valve for discharging pressurized air through the air conduit. The air and fluid conduits are coupled to an outlet chamber which has a spray head. Compressed air is discharged from the spray head for allowing kitchen utensils to be prewashed with air. The lever or button is further coupled to a second valve for discharging pressurized fluid through the fluid conduit. The fluid conduit is also coupled to the outlet chamber for allowing a discharge of pressurized air and fluid to be sprayed from the nozzle to further prewash the kitchen utensils.

Abstract: Provided is a slurry composition including abrasive particles, halogen oxide, and nitroxide compound. The combination of halogen oxide and nitroxide compound has a synergistic effect to remove a substrate containing tungsten and silicon oxide. Moreover, a use of the slurry composition and a polishing method using the slurry composition are provided.

Abstract: A substrate is provided with a patterned layer over a stack of one or more processing layers. The processing layers include at least one trim layer and at least one masking layer under the trim layer. The trim layer may have structures that have smaller linewidths than the structures of the patterned layer by utilizing an isotropic gaseous process to trim the structures of the trim layer. The structures of the trim layer, after trimming, may then be replicated in the mask layer to provide a linewidth in the mask layer that is smaller than the linewidth in the patterned layer. The technique may allow nanometer control of an EUV lithography process at pitches of 36 nm or less. In one embodiment, the technique may be utilized to provide an EUV lithography process for increasing the trench dimensions in a BEOL trench formation process step.