Patents Examined by Nadine G. Norton
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Patent number: 10493504Abstract: Apparatus for and method of cleaning an electrically conductive surface of an optical element in a system for generating extreme ultraviolet radiation in which electrically conductive surface is used as an electrode for generating a plasma which cleans the surface.Type: GrantFiled: December 8, 2016Date of Patent: December 3, 2019Assignee: ASML NETHERLANDS B.V.Inventor: Alexander I. Ershov
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Patent number: 10490392Abstract: A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device to transfer the first focus ring out of the process chamber without opening the process chamber to the atmosphere; after the first focus ring is transferred out of the process chamber, controlling the plasma processing apparatus to clean the surface of the mount table; and after the surface of the mount table is cleaned, controlling the transfer device to transfer a second focus ring into the process chamber and place the second focus ring on the surface of the mount table without opening the process chamber to the atmosphere.Type: GrantFiled: July 6, 2017Date of Patent: November 26, 2019Assignee: Tokyo Electron LimitedInventor: Shigeru Ishizawa
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Patent number: 10483135Abstract: An etching method for a target object. The target object includes a main surface, grooves formed in the main surface, and an etching target film covering the main surface and surfaces of the grooves. The method includes supplying a first gas into a processing chamber, and supplying a second gas and a high frequency power to generate a plasma of a gas including the second gas in the processing chamber. The first gas contains an oxidizing agent that does not include a hydrogen atom. The second gas contains a compound that includes one or more silicon atoms and one or more fluorine atoms and does not include a hydrogen atom. The etching target film is made of a material that is dry etched by using fluorine, and portions of the etching target film covering the surfaces of the grooves are selectively removed.Type: GrantFiled: March 8, 2018Date of Patent: November 19, 2019Assignee: TOKYO ELECTRON LIMITEDInventor: Kenji Ouchi
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Patent number: 10468273Abstract: A substrate processing method in a substrate processing apparatus that has a cup part for receiving processing liquid such as pure water which is splashed from a substrate. The cup part is formed of electrical insulation material. Hydrophilic treatment may be performed on an outer annular surface of the cup part. Water is held on at least one surface of the cup part while processing the substrate. The water maybe substantially grounded. With the disclosed method, charged potential of the cup part generated by splashing of pure water can be suppressed, without greatly increasing the manufacturing cost of the substrate processing apparatus. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.Type: GrantFiled: November 30, 2017Date of Patent: November 5, 2019Assignee: SCREEN Holdings Co., Ltd.Inventors: Masahiro Miyagi, Masanobu Sato, Hiroyuki Araki
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Patent number: 10468266Abstract: A dry etching method includes performing at least two etching steps, and further includes injecting protective gas into an etch chamber for processing between any two successive etching steps, wherein the protective gas generates plasma to neutralize electrons accumulated on a side wall of an etching trench. According to the present disclosure, hydrogen plasma is added in an etching process to remove the electrons accumulated on the side wall of the etching trench so as to reduce the microetching effect in multiple etching. In this way, process stability and reliability of a display substrate are improved.Type: GrantFiled: April 7, 2016Date of Patent: November 5, 2019Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Yinghai Ma, Liangjian Li, Yueping Zuo
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Patent number: 10460946Abstract: A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is ?-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.Type: GrantFiled: June 7, 2016Date of Patent: October 29, 2019Assignees: TOKYO ELECTRON LIMITED, CENTRAL GLASS CO., LTD.Inventors: Jun Lin, Koji Takeya, Shinichi Kawaguchi, Mitsuhiro Tachibana, Akifumi Yao, Kunihiro Yamauchi
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Patent number: 10453686Abstract: Methods and systems for in-situ spacer reshaping for self-aligned multi-patterning are described. In an embodiment, a method of forming a spacer pattern on a substrate may include providing a substrate with a spacer. The method may also include performing a passivation treatment to form a passivation layer on the spacer. Additionally, the method may include performing spacer reshaping treatment to reshape the spacer. The method may also include controlling the passivation treatment and spacer reshaping treatment in order to achieve spacer formation objectives.Type: GrantFiled: April 13, 2017Date of Patent: October 22, 2019Assignee: Tokyo Electron LimitedInventors: Eric Chih-Fang Liu, Angelique Raley, Akiteru Ko
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Patent number: 10392531Abstract: A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, —an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.Type: GrantFiled: November 25, 2010Date of Patent: August 27, 2019Assignee: BASF SEInventors: Vijay Immanuel Raman, Sophia Ebert, Mario Brands, Yongqing Lan, Philipp Zacharias, Ilshat Gubaydullin, Yuzhuo Li
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Patent number: 10373842Abstract: Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity.Type: GrantFiled: November 20, 2015Date of Patent: August 6, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Song Y. Chang, Mark Evans, Dnyanesh Chandrakant Tamboli, Stephen W. Hymes
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Patent number: 10354875Abstract: A method may include forming a sacrificial mask on a device structure, the sacrificial mask comprising a carbon-based material. The method may further include etching memory structures in exposed regions of the sacrificial mask, implanting an etch-enhancing species into the sacrificial mask, and performing a wet etch to selectively remove the sacrificial mask at etch temperature, less than 350° C.Type: GrantFiled: April 6, 2018Date of Patent: July 16, 2019Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Rajesh Prasad, Ning Zhan, Tzu-Yu Liu, James Cournoyer, Kyu-Ha Shim, Kwangduk Lee, John Lee Klocke, Eric J. Bergman, Terrance Lee, Harry S. Whitesell
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Patent number: 10347499Abstract: In a method of an embodiment, radicals, which are generated from a processing gas, is adsorbed to a layer to be etched without applying a high-frequency bias to a lower electrode, in an adsorption step. In the subsequent etching step, ions, which are generated from the processing gas, are drawn into the layer to be etched by applying a high-frequency bias to the lower electrode. The adsorption step and the etching step are alternately repeated. In the adsorption step, a density of radicals is 200 or greater times a density of ions. In the etching step, RF energy having a power density of 0.07 W/cm2 or less is supplied to the lower electrode or a high-frequency bias having a power density of 0.14 W/cm2 or less is supplied to the lower electrode for a period of 0.5 seconds or less.Type: GrantFiled: April 6, 2016Date of Patent: July 9, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Koji Maruyama, Akira Koshiishi, Toshio Haga, Masato Horiguchi, Makoto Kato
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Patent number: 10347497Abstract: A method of catalyst-assisted chemical etching with a vapor-phase etchant has been developed. In one approach, a semiconductor substrate including a patterned titanium nitride layer thereon is heated, and an oxidant and an acid are evaporated to form a vapor-phase etchant comprising an oxidant vapor and an acid vapor. The semiconductor substrate and the patterned titanium nitride layer are exposed to the vapor-phase etchant during the heating of the semiconductor substrate. The vapor-phase etchant diffuses through the patterned titanium nitride layer, and titanium nitride-covered regions of the semiconductor substrate are etched. Thus, an etched semiconductor structure is formed.Type: GrantFiled: September 22, 2017Date of Patent: July 9, 2019Assignee: The Board of Trustees of the University of IllinoisInventors: Xiuling Li, Jeong Dong Kim
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Patent number: 10332906Abstract: A dry etching method includes a process of, while continuously applying bias power using an ion species to a material to be processed including a first conductive member, a first insulating film provided on the first conductive member, a second conductive member provided on the first insulating film, and a second insulating film provided on the second conductive member, dry etching the second insulating film to expose the second conductive member. A time for which the bias power is continuously applied is set to 50 microseconds or less and a duty ratio of the bias power is set to 50% or less.Type: GrantFiled: July 27, 2017Date of Patent: June 25, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Kaori Narumiya, Hisataka Hayashi, Keisuke Kikutani, Akio Ui, Yosuke Sato
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Patent number: 10310373Abstract: A method for manufacturing a low-defect and high-quality mask blank substrate with minimized transfer pattern defects and high mechanical strength, particularly such that the occurrence of a phenomenon where a portion of a transfer pattern and a principal surface of the substrate therebeneath are broken off together is minimized such that there is little pattern loss. The mask blank is manufactured by preparing a mask blank substrate (X) having a substrate principal surface (X1) polished using a polishing solution containing abrasive grains, etching the substrate principal surface (X1) using catalyst-referred etching so as to remove damaged portions from the principal surface (X1), and then depositing a thin film that forms a transfer pattern on the substrate principal surface (X1) of the substrate (X) by sputtering.Type: GrantFiled: January 8, 2014Date of Patent: June 4, 2019Assignee: HOYA CORPORATIONInventors: Takeyuki Yamada, Takahito Nishimura
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Patent number: 10295105Abstract: A pig launcher/receiver includes a fluid distribution grid arranged above a floor of the pig launcher/receiver's barrel to define a fluid chamber between the floor and the fluid distribution grid. The distribution grid has a plurality of ports arranged to form jets that discharge at least a portion of the fluid which enters the fluid chamber. A predetermined number of the ports are inclined relative to vertical and in a direction opposite a closure door of the barrel. The fluid distribution grid, which is preferably semi-circular shaped, can be a permanent weldment, bolted on, or removable. When used in launching a pig, the ports provide a differential pressure that lifts the pig and overcomes friction as the pig moves forward. Because a number of the ports are blocked by the sealing elements (cup or disc) of the pipeline pig, the number of pigs residing in the launcher/receiver can be determined.Type: GrantFiled: June 17, 2016Date of Patent: May 21, 2019Assignee: TDW Delaware, Inc.Inventors: Roger Poe, Woody Ray Smith, Joshua D. Mitchell
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Patent number: 10287430Abstract: Provided is a method of manufacturing a patterned substrate. The method may be applied to a process of manufacturing a device such as an electronic device or integrated circuit, or another use, for example, to manufacture an integrated optical system, a guidance and detection pattern of a magnetic domain memory, a flat panel display, a LCD, a thin film magnetic head or an organic light emitting diode, and used to construct a pattern on a surface to be used to manufacture a discrete tract medium such as an integrated circuit, a bit-patterned medium and/or a magnetic storage device such as a hard drive.Type: GrantFiled: September 30, 2015Date of Patent: May 14, 2019Assignee: LG Chem, Ltd.Inventors: Se Jin Ku, Mi Sook Lee, Hyung Ju Ryu, Jung Keun Kim, Sung Soo Yoon, No Jin Park, Je Gwon Lee, Eun Young Choi
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Patent number: 10287169Abstract: The present disclosure relates to methods for enhanced demetalyzation of an ultrahard material, such as polycrystalline diamond (PCD) or cubic boron nitride (CBN), using a thiourea solution. The thiourea solution may contain thiourea and an acid, such as a Bronstead acid suitable for leaching. The thiourea may contain thiourea or a substituted thiourea, including tautomers thereof. The ultrahard material may be exposed to the thiourea solution for a time and under conditions sufficient to remove at least a desired amount of a metal, such as a catalyst used during formation of the PCD or CBN, from at least a portion of the ultrahard material.Type: GrantFiled: December 9, 2013Date of Patent: May 14, 2019Assignee: Halliburton Energy Services, Inc.Inventor: Gary E. Weaver
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Patent number: 10279380Abstract: A method for cleaning a coke deposit from an internal surface of a process equipment, comprising removing at least a portion of the coke deposit from the internal surface using a flexible pig comprising a plurality of bristles, without damaging a metal protective layer of the internal surface of the process equipment. A flexible pig for cleaning a coke deposit from an internal surface of a process equipment without damaging a metal protective layer of the internal surface, comprising a flexible body formed of a polymeric material, and a plurality of bristles partially encapsulated by the polymeric material of the flexible body.Type: GrantFiled: April 29, 2016Date of Patent: May 7, 2019Assignee: Chevron Phillips Chemical Company LPInventor: Vincent dePaul McGahee
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Patent number: 10279384Abstract: A device and related method for removing debris from a metal wire formed by a process utilizing a lubricant is provided. The device includes at least two segments forming a passage through which the wire passes, each having a leading edge for stripping debris from the wire, and a resilient member positioned around the at least two segments and applying a force to the segments sufficient to cause contact between the leading edges and the wire passing through the passage. The method broadly includes the steps of moving the metal wire through a passage formed by a plurality of segments, contacting the wire moving through the passage using a leading edge of each of the plurality of segments, and applying a force to the plurality of segments to cause contact between the leading edge of each of the plurality of segments and the wire passing through the passage.Type: GrantFiled: July 23, 2015Date of Patent: May 7, 2019Assignee: Ford Motor CompanyInventor: Timothy George Beyer
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Patent number: 10276398Abstract: Methods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed from the entire depth of the recessed feature. Each etching and deposition operation may target a particular depth along the sidewalls of the feature. In some cases, the unwanted material is removed from the bottom of the feature up, and in other cases the unwanted material is removed from the top of the feature down. Some combination of these may also be used.Type: GrantFiled: August 2, 2017Date of Patent: April 30, 2019Assignee: Lam Research CorporationInventors: Kwame Eason, Pilyeon Park, Mark Naoshi Kawaguchi, Seung-Ho Park, Hsiao-Wei Chang
