Abstract: A semiconductor device includes a semiconductor element, first and second leads, and a sealing resin. The semiconductor element includes first and second electrodes. The first lead includes a mounting base having a main face to which the first electrode is bonded and a back face, and includes a first terminal connected to the first electrode. The second lead includes a second terminal connected to the second electrode. The sealing resin includes a main face and a back face opposite to each other, and includes an end face oriented in the protruding direction of the terminals. The back face of the mounting base is exposed from the back face of the resin. The sealing resin includes a groove formed in its back face and disposed between the back face of the mounting base and a boundary between the second terminal and the end face of the resin.

Abstract: The present invention relates to the technical field of semiconductor manufacturing, and in particular, to a method for forming a semiconductor structure and a semiconductor structure. The method for forming a semiconductor structure comprises: forming an interconnect layer and a conductive layer covered on a surface of the interconnect layer; forming a protective layer covering a surface of the conductive layer away from the interconnect layer; forming a trench penetrating the protective layer and the conductive layer; and filling a dielectric layer in the trench, and forming an air gap in the dielectric layer, the air gap extending from the trench in the conductive layer into the trench in the protective layer.

Abstract: A device includes a first region including first semiconductor pillars extending through first conductive layers; a second region including second semiconductor pillars extending through second conductive layers; and a third region disposed between the first region and the second region and including insulator columns extending through third conductive layers. The third region includes a fourth region and a fifth region. In the fourth region, one third conductive layer electrically connects one first conductive layer and one second conductive layer to each other, and in the fifth region, one third conductive layer is connected to a contact plug. A first diameter of a first subset of the insulator columns provided in the fourth region is smaller than a second diameter of a second subset of the insulator columns provided in the fifth region.

Abstract: The present disclosure describes semiconductor packages and, more particularly, chip-embedded semiconductor packages. The packages include core panels with apertures extending through the core panel. Semiconductor chips are embedded within chip apertures. A molding compound can be positioned along one side of the core panel. In some examples, the semiconductor chips are embedded within the molding compound. In other examples, the semiconductor chips are adhered to the molding compound. The coefficient of thermal expansion (CTE) values of the core panels described herein can be tailored to decrease warpage of the package as the semiconductor chip heats during use.

Abstract: In one embodiment, the optoelectronic semiconductor device comprises at least two metallic lead frame parts and a circuit chip on the lead frame parts. An electrically insulating and opaque matrix material mechanically connects the lead frame parts. The circuit chip is embedded in the matrix material, so that a carrier is formed by the matrix material together with the lead frame parts and the circuit chip. An optoelectronic semiconductor chip is provided on a carrier upper side. Furthermore, the semiconductor device comprises at least one optical component on the carrier upper side.

Abstract: A semiconductor structure includes a semiconductor die having an active surface, a passivation layer covering the active surface of the semiconductor die, and a post-passivation interconnect (PPI) layer disposed over the passivation layer. The PPI layer includes a ball pad having a first diameter. A polymer layer covers a perimeter of the ball pad. An under-bump-metallurgy (UBM) layer is disposed on the ball pad. The UBM layer has a second diameter that is greater than the first diameter of the ball pad. A solder ball is mounted on the UBM layer.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.

Abstract: A chip package structure includes an interposer structure that contains a package-side redistribution structure, an interposer core assembly, and a die-side redistribution structure. The interposer core assembly includes at least one silicon substrate interposer, and each of the at least one silicon substrate interposer includes a respective silicon substrate, a respective set of through-silicon via (TSV) structures vertically extending through the respective silicon substrate, a respective set of interconnect-level dielectric layers embedding a respective set of metal interconnect structures, and a respective set of metal bonding structures that are electrically connected to the die-side redistribution structure. The chip package structure includes at least two semiconductor dies that are attached to the die-side redistribution structure, and an epoxy molding compound (EMC) multi-die frame that laterally encloses the at least two semiconductor dies.

Abstract: A semiconductor package is provided. The semiconductor package includes a semiconductor die, a stack of polymer layers, redistribution elements and a passive filter. The polymer layers cover a front surface of the semiconductor die. The redistribution elements and the passive filter are disposed in the stack of polymer layers. The passive filter includes a ground plane and conductive patches. The ground plane is overlapped with the conductive patches, and the conductive patches are laterally separated from one another. The ground plane is electrically coupled to a reference voltage. The conductive patches are electrically connected to the ground plane, electrically floated, or electrically coupled to a direct current (DC) voltage.

Abstract: A method of forming a graphene structure, includes: providing a substrate; performing a preprocessing by supplying a first processing gas including a carbon-containing gas to the substrate while heating the substrate, without using plasma; and after the preprocessing, forming the graphene structure on a surface of the substrate through a plasma CVD using plasma of a second processing gas including a carbon-containing gas.

Abstract: A method of fabricating a semiconductor package includes providing a semiconductor chip, forming a redistribution substrate, and fabricating a package including the semiconductor chip disposed on the redistribution substrate. The forming of the redistribution substrate may include forming a first insulating layer on a substrate, the first insulating layer having a first opening formed therein, forming an integrally formed first redistribution pattern in the first opening and on the first insulating layer, forming a second insulating layer on the first insulating layer to cover the first redistribution pattern, and performing a planarization process on the second insulating layer to expose the first redistribution pattern.

Abstract: An integrated antenna package structure includes a first redistribution structure, a first chip, a heat dissipation structure, a second chip, and an antenna structure. The first chip is located on a first side of the first redistribution structure, and is electrically connected to the first redistribution structure. The heat dissipation structure is thermally connected to the first chip, and the first chip is located between the heat dissipation structure and the first redistribution structure. The second chip is located on a second side of the first redistribution structure opposite to the first side, and is electrically connected to the first redistribution structure. The antenna structure is electrically connected to the first redistribution structure.

Abstract: A method includes attaching an integrated circuit die adjacent to a first substrate, the integrated circuit die comprising: an active device in a second substrate; a pad adjacent to the second substrate; and a first dielectric layer adjacent to the second substrate, the first dielectric layer comprising a polyimide with an ester group; forming an encapsulant around the integrated circuit die; and removing the first dielectric layer.

Abstract: An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.

Abstract: Disclosed is a method for packaging a chip, comprising the following steps: providing a baseplate formed with an open slot thereon penetrating through opposite sides of the baseplate; providing a release base material, wherein the release base material is bonded to a first side of the baseplate and covers the open slot; providing a chip, wherein the chip is mounted on the release base material at the position of the open slot; packaging a second side of the baseplate facing away from the release base material so as to form a packaging layer which packages the chip and fixes it on the baseplate; removing the release base material so as to obtain a package structure for the chip.

Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a redistribution layer including a first conductive feature and a second conductive feature, a first contact feature disposed over and electrically coupled to the first conductive feature, a second contact feature disposed over and electrically coupled to the second conductive feature, and a passivation feature extending from between the first conductive feature and the second conductive feature between the first contact feature and the second contact feature. The passivation feature includes a dielectric feature and a dielectric layer. The dielectric layer is disposed on a planar top surface of the dielectric feature and a composition of the dielectric feature is different from a composition of the dielectric layer.

Abstract: A method for forming a chip package structure is provided. The method includes removing a first portion of a substrate to form a first recess in the substrate. The method includes forming a buffer structure in the first recess. A first Young's modulus of the buffer structure is less than a second Young's modulus of the substrate. The method includes forming a first wiring structure over the buffer structure and the substrate. The method includes bonding a chip package to the first wiring structure. The chip package has an interposer substrate and a chip structure over the interposer substrate, and a first corner of the interposer substrate and a second corner of the chip structure overlap the buffer structure in a top view of the chip package and the buffer structure.

Abstract: The present invention is a method for producing a power module, including processes (1) to (4) in the following order: (1) a disposition process of disposing a thermosetting resin composition that is solid at 25° C. into a container housing an insulator substrate with multiple semiconductor components mounted thereon; (2) a melt process involving disposing the container having the thermosetting resin composition disposed therein into a molding apparatus capable of heating, pressurization, and depressurization, and heating the container to melt the thermosetting resin composition; (3) a pressurization-depressurization process of performing one or more depressurizations and one or more pressurizations inside the molding apparatus; and (4) a cure process of heating the inside of the molding apparatus to cure the thermosetting resin composition. This is to provide a method for producing a power module having few voids at the time of molding and excellent reliability.

Abstract: A semiconductor package includes a lower redistribution layer disposed on a lower surface of the semiconductor chip including an insulating laver, a redistribution pattern, a via, an under bump metal (UBM), and a post disposed on the redistribution pattern. The post vertically overlaps with the UBM. A mold layer is on the lower redistribution layer and surrounds the semiconductor chip. A connecting terminal is connected to the UBM. The UBM includes a first section contacting the redistribution pattern, and a second section contacting the insulating layer. The lost has a ring shape having an inner surface and an outer surface when viewed a top view. A maximum width of the inner surface is less than a Maximum width of an upper surface of the first section. A maximum width of the outer surface is greater than the maximum width of the upper surface of the first section.

Abstract: A semiconductor package that includes a support wiring structure. A semiconductor chip is on the support wiring structure. A cover wiring structure is on the semiconductor chip. A plurality of connection structures penetrates a filling member and electrically connects the support wiring structure to the cover wiring structure. The filling member fills a space between the support wiring structure and the cover wiring structure. The filling member surrounds the plurality of connection structures and the semiconductor chip and includes a plurality of fillers. A partial portion of the plurality of fillers includes cutting fillers having a flat surface that extends along a vertical level that is a reference level.