Abstract: Representative techniques and devices, including process steps may be employed to mitigate undesired dishing in conductive interconnect structures and erosion of dielectric bonding surfaces. For example, an embedded layer may be added to the dished or eroded surface to eliminate unwanted dishing or voids and to form a planar bonding surface. Additional techniques and devices, including process steps may be employed to form desired openings in conductive interconnect structures, where the openings can have a predetermined or desired volume relative to the volume of conductive material of the interconnect structures. Each of these techniques, devices, and processes can provide for the use of larger diameter, larger volume, or mixed-sized conductive interconnect structures at the bonding surface of bonded dies and wafers.

Abstract: The present invention discloses a circuit substrate including an insulation layer; a metal layer disposed on a first surface of the insulation layer; and a first solder pad and a second solder pad disposed on a second surface of the insulation layer opposite the metal layer. Shortest distances between soldering dots on the metal layer and a projected area of the first solder pad on the metal layer are shorter than a distance threshold, the shortest distance being a minimum value of vertical distances between each of the soldering dots on the metal layer and a side edge of the projected area of the first solder pad on the metal layer. The soldering dots on the metal layer correspond one-to-one to soldering dots on a corresponding die; and the side edge is adjacent to a projected area of the second solder pad on the metal layer.

Abstract: The present disclosure provides a fan-out packaging structure and a method for fabricating the fan-out packaging. The fan-out packaging structure includes a first redistribution layer, a second redistribution layer, metal connecting posts, a semiconductor chip, a first filling layer, a first packaging layer, a stacked chip package, a passive element, a second filling layer, a second packaging layer, and metal bumps. By means of the present disclosure, various chips having different functions can be integrated into one packaging structure, thereby improving the integration of the fan-out packaging structure. By means of the first redistribution layer, the second redistribution layer, and the metal connecting posts, a three-dimensional vertical stacked packaging is achieved.

Abstract: A semiconductor package device includes a flexible carrier, a first chip, a second chip, a first molding layer, a first adhesive layer and a second molding layer. The flexible carrier has a flexible layer and a rigid layer. The flexible layer has a patterned build-up circuit. The rigid layer is connected to a portion surface of the flexible layer. The position that the flexible layer connected to the rigid layer is formed a first carrying part and a second carrying part. The region of the flexible layer between the first carrying part and the second carrying part without the rigid layer is formed as a first flexible part. The first chip is connected to the first carrying part by flip-chip manner and the second chip is connected to the second carrying part by flip-chip manner. The first molding layer covers the first chip and the second molding layer covers the second chip. The first adhesive layer is connected between the first molding layer and the second carrying part.

Abstract: A stacked package configuration is described that includes a bottom package and an upper package. The bottom package includes a substrate having a top surface with first circuitry and metal first pads. A molded layer is then formed over the substrate. Holes through the molded layer are then laser drilled to expose the first pads. The holes and first pads align with leads of an upper package, which contains further circuit components. The holes are then partially filled with a solder paste. A thermal epoxy is applied between the molded layer and the upper package. The leads of the upper package are then inserted into the holes, and the solder paste is reflowed to electrically, thermally, and mechanically connect the upper package to the bottom package. The reflow heat also cures the epoxy. A ball grid array is then formed on the bottom of the substrate.

Abstract: Provided are a package and a method of manufacturing the same. The package includes a first die, a second die, a bridge structure, an encapsulant, and a redistribution layer (RDL) structure. The first die and the second die are disposed side by side. The bridge structure is disposed over the first die and the second die to electrically connect the first die and the second die. The encapsulant laterally encapsulates the first die, the second die, and the bridge structure. The RDL structure is disposed over a backside of the bridge structure and the encapsulant. The RDL structure includes an insulating structure and a conductive pattern, the conductive pattern is disposed over the insulating structure and extending through the insulating structure and a substrate of the bridge structure, so as to form at least one through via in the substrate of the bridge structure.

Abstract: An electronic device includes a die attach pad with a set of cantilevered first leads for down bond connections, a set of second leads spaced apart from the die attach pad, a semiconductor die mounted to the die attach pad and enclosed by a package structure, a set of first bond wires connected between respective bond pads of the semiconductor die and at least some of the first leads, and a set of second bond wires connected between respective further bond pads of the semiconductor die and at least some of the second leads.

Abstract: A semiconductor package includes: a first wiring pattern; a dielectric layer that covers the first wiring pattern; a second wiring pattern on the dielectric layer, wherein the second wiring pattern includes a line part that extends in a first direction and a via part that connects the line part to the first wiring pattern; a pad pattern electrically connected to the second wiring pattern, wherein the pad pattern includes a connection part and an extension part, wherein the connection part covers a first surface of the line part of the second wiring pattern, and the extension part has a top surface at a level lower than a level of the top surface of the line part of the second wiring pattern; and a seed pattern between the extension part and the dielectric layer.

Abstract: A semiconductor device and a method for manufacturing a semiconductor device that enable characteristics to be improved are provided. A semiconductor device includes a substrate that has a first surface and a second surface that is located opposite the first surface, a first element that is disposed on the first surface, and a first resin layer that is disposed on the first surface and that is disposed around the first element in a plan view. The substrate includes a wiring layer. The first element includes a semiconductor layer, an electrode portion that is located on a surface of the semiconductor layer facing the substrate, and an insulating layer that is located opposite the electrode portion with the semiconductor layer interposed therebetween. The electrode portion is connected to the wiring layer. A height of the first resin layer from the first surface is more than a height of the first element from the first surface.

Abstract: This publication discloses an electronic module, comprising a first conductive pattern layer and a first insulating-material layer on at least one surface of the first conductive pattern layer, at least one opening in the first insulating-material layer that extends through the first insulating-material layer, a component having a contact surface with contact terminals, the component being arranged at least partially within the opening with its contact terminals electrically coupled to the first conductive pattern layer, a second insulating-material layer provided on the first insulating-material layer, and a conductive pattern embedded between the first and second insulating material layers. This publication additionally discloses a method for manufacturing an electronic module.

Abstract: Various embodiments disclosed relate to a substrate for a semiconductor device. The substrate includes a first major surface and a second major surface opposite the first major surface. The substrate further includes a cavity defined by a portion of the first major surface. The cavity includes a bottom dielectric surface and a plurality of sidewalls extending from the bottom surface to the first major surface. A first portion of a first sidewall includes a conductive material.

Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a semiconductor die, conductive through vias, an insulating encapsulant, and a redistribution structure. The conductive through vias are electrically coupled to the semiconductor die. The insulating encapsulant laterally encapsulates the semiconductor die and the conductive through vias, wherein the insulating encapsulant has a recess ring surrounding the semiconductor die, the conductive through vias are located under the recess ring, and a vertical projection of each of the conductive through vias overlaps with a vertical projection of the recess ring. The redistribution structure is electrically connected to the semiconductor die and the conductive through vias.

Abstract: Embodiments may include inductors with embedded magnetic cores and methods of making such inductors. In an embodiment, an integrated circuit package may include an integrated circuit die with a multi-phase voltage regulator electrically coupled to the integrated circuit die. In such embodiments, the multi-phase voltage regulator may include a substrate core and a plurality of inductors. The inductors may include a conductive through-hole disposed through the substrate core and a plugging layer comprising a dielectric material surrounding the conductive through-hole. In an embodiment, a magnetic sheath is formed around the plugging layer. In an embodiment, the magnetic sheath is separated from the plated through hole by the plugging layer. Additionally, a first layer comprising a dielectric material may be disposed over a first surface of the magnetic sheath, and a second layer comprising a dielectric material may be disposed over a second surface of the magnetic sheath.

Abstract: An integrated circuit package and a system including the integrated circuit package as well as a process for assembling the integrated circuit package are provided to improve integrated circuit power delivery. The integrated circuit package includes a first die having a plurality of pads formed in the first die and exposed on a top surface of the first die, at least one post on the first die, and a substrate including one or more redistribution layers. Each post in the at least one post spans at least two pads on the first die utilized for power distribution, and the first die is connected to the substrate via the at least one post.

Abstract: A semiconductor device package and a method for manufacturing a semiconductor device package are provided. The semiconductor device package includes a substrate, a clip, and a support structure. The clip is disposed on the substrate. The clip includes a first portion and a second portion separated from each other by a slit. The support structure is above the substrate and supports the clip. The support structure has a first surface and a second surface facing the first surface, and the first surface and the second surface define a gap.

Abstract: A semiconductor package that includes a support wiring structure. A semiconductor chip is on the support wiring structure. A cover wiring structure is on the semiconductor chip. A plurality of connection structures penetrates a filling member and electrically connects the support wiring structure to the cover wiring structure. The filling member fills a space between the support wiring structure and the cover wiring structure. The filling member surrounds the plurality of connection structures and the semiconductor chip and includes a plurality of fillers. A partial portion of the plurality of fillers includes cutting fillers having a flat surface that extends along a vertical level that is a reference level.

Abstract: An electronic device includes a substrate, a first insulating film on the substrate, a second insulating film on the first insulating film, first and second coils respectively in the first and second insulating films, first and second terminals, and first and second connection conductors. The first and second insulating films contact each other so that the first and second coils are magnetically coupled. The first insulating film includes a first non-contact portion not contacting the second insulating film. One of the first and second insulating films includes a second non-contact portion not contacting the first or second insulating film. The first terminal is provided on the first non-contact portion and electrically connected to the first coil. The second terminal is provided on the second non-contact portion and electrically connected to the second coil. The first and second connection conductors are connected to the first and second terminals, respectively.

Abstract: A manufacturing method of a package includes at least the following steps. A carrier is provided. An inductor is formed over the carrier. The inductor includes a first portion, a second portion, and a third portion. The first portion is parallel to the third portion, and the second portion connects the first portion and the third portion. A die is placed over the carrier. The die is surrounded by the inductor. An encapsulant is formed between the first portion and the third portion of the inductor. The encapsulant laterally encapsulates the die and the second portion of the inductor.

Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a redistribution layer including a first conductive feature and a second conductive feature, a first contact feature disposed over and electrically coupled to the first conductive feature, a second contact feature disposed over and electrically coupled to the second conductive feature, and a passivation feature extending from between the first conductive feature and the second conductive feature between the first contact feature and the second contact feature. The passivation feature includes a dielectric feature and a dielectric layer. The dielectric layer is disposed on a planar top surface of the dielectric feature and a composition of the dielectric feature is different from a composition of the dielectric layer.

Abstract: The present disclosure is directed to a leadframe package having a side solder ball contact and methods of manufacturing the same. A plurality of solder balls are coupled to recesses in a leadframe before encapsulation and singulation. After singulation, a portion of each solder ball is exposed on sidewalls of the package. This ensures that the sidewalls of the leads are solder wettable, which allows for the formation of stronger joints when the package is coupled to a substrate. This increased adhesion reduces resistance at the joints and also mitigates the effects of expansion of the components in the package such that delamination is less likely to occur. As a result, packages with a side solder ball contact have increased life cycle expectancies.