Abstract: A method of managing a telephone call from a calling station to a called station having a telephone service, where the called station is capable of connection to the Internet comprising the steps of forwarding the called station telephone service to an intermediate server upon the called station launching an Internet connection responsive to a telephone call from a calling station received by the intermediate server, sending a communication to the called station including available calling station identification information and a query to the called station via the Internet requesting a decision from a list of call disposition options for the telephone call receiving a decision from the called station choosing at least one call disposition option and performing an action according to the call disposition option.

Abstract: A telecommunications system includes a network (102) and a multimedia server (104) operably coupled to the network. The multimedia server (104) is adapted to manage a multimedia conference and includes a memory (103) for storing selectable portions of the multimedia conference. The system further includes one or more client devices (122) operably coupled to the network and adapted to set recording cues for choosing portions of said multimedia conference for playback. The multimedia server or clients may include a voice recognition system (216) for transcribing audio portions of the conference. The voice recognition system may further be used to detect instances of the recording cues. In addition, in certain embodiments, the system provides for a moderator or participants to the conference an ability to adjust relevance probabilities generated upon recognition of the cues.

Abstract: A teleconferencing system comprises a conference bridge having a multichannel connection to each customer equipment. The customer equipment has a unit to separately process each channel to provide one output representing each of the other participants. These outputs can be combined in a spatializer to provide a spatialized output in which each participant is represented by a virtual sound source. The conference bridge comprises a concentrator, having a unit to identify the currently active input channels and to transmit only those active channels over the multichannel connection, together with control information identifying the transmitted channels.

Abstract: Program disturb is reduced in a non-volatile storage system by programming storage elements on a selected word line WLn in separate groups, according to the state of their WLn?1 neighbor storage element, and applying an optimal pass voltage to WLn?1 for each group. Initially, the states of the storage elements on WLn?1 are read. A program iteration includes multiple program pulses. A first program pulse is applied to WLn while a first pass voltage is applied to WLn?1, a first group of WLn storage elements is selected for programming, and a second group of WLn storage elements is inhibited. Next, a second program pulse is applied to WLn while a second pass voltage is applied to WLn?1, the second first group of WLn storage elements is selected for programming, and the first group of WLn storage elements is inhibited. A group can include one or more data states.

Abstract: In a programming operation, selected storage elements on a selected word line are programmed while unselected storage elements on the selected word line are inhibited from programming by channel boosting. To provide a sufficient but not excessive level of boosting, the amount of boosting can be set based on a data state of the unselected storage element. A greater amount of boosting can be provided for a lower data state which represents a lower threshold voltage and hence is more vulnerable to program disturb. A common boosting scheme can be used for groups of multiple data states. The amount of boosting can be set by adjusting the timing and magnitude of voltages used for a channel pre-charge operation and for pass voltages which are applied to word lines. In one approach, stepped pass voltages on unselected word lines can be used to adjust boosting for channels with selected data states.

Abstract: A power supply and monitoring apparatus such as in a non-volatile memory system. A power supply circuit provides power to a large number of sense modules, each of which is associated with a bit line and a string of non-volatile storage elements. During a sensing operation, such as a read or verify operation, a discharge period is set in which a sense node of each sense module discharges into the associated bit line and string of non-volatile storage elements, when the string of non-volatile storage elements, is conductive. This discharge sinks current from the power supply, causing a perturbation. By sampling the power supply, a steady state condition can be detected from a rate of change. The steady state condition signals that the discharge period can be concluded and data can be latched from the sense node. The discharge period automatically adapts to different memory devices and environmental conditions.

Abstract: A set of non-volatile storage elements are subjected to a programming process in order to store data. During the programming process, one or more verification operations are performed to determine whether the non-volatile storage elements have reached their target condition to store the appropriate data. Programming can be stopped when all non-volatile storage elements have reached their target level or when the number of non-volatile storage elements that have not reached their target level is less than a number or memory cells that can be corrected using an error correction process during a read operation (or other operation). The number of non-volatile storage elements that have not reached their target level can be estimated by counting the number of non-volatile storage elements that have not reached a condition that is different (e.g., lower) than the target level.

Abstract: A digital television (DTV) transmitter and a method of coding data in the DTV transmitter are disclosed. A data formatter generates an enhanced data packet including the enhanced data and a known data sequence. A data randomizer randomizes the enhanced data packet. A RS encoder RS-codes the randomized data packet by adding first parity data, and a data interleaver interleaves the RS-coded data packet. A trellis encoding unit trellis-encodes the interleaved data packet. Herein the trellis encoding unit includes a TCM encoder for generating a first output bit by trellis-encoding a first input bit and generating a second output bit by bypassing the first input bit, and a pre-coder for generating a third output bit by pre-coding a second input bit, wherein memories included in the TCM encoder and the pre-coder are initialized when the known data sequence is inputted to the trellis encoding unit.

Abstract: A non-volatile storage system performs programming for a plurality of non-volatile storage elements and selectively performs re-erasing of at least a subset of the non-volatile storage elements that were supposed to remain erased, without intentionally erasing programmed data.

Abstract: Methods and non-volatile storage systems are provided for using compensation that depends on the temperature at which the memory cells were programmed. Note that the read level compensation may have a component that is not dependent on the memory cells' Tco. That is, the component is not necessarily based on the temperature dependence of the Vth of the memory cells. The compensation may have a component that is dependent on the difference in width of individual Vth distributions of the different states across different temperatures of program verify. This compensation may be used for both verify and read, although a different amount of compensation may be used during read than during verify.

Abstract: A display driving circuit comprising a video signal transformation circuit, a reference voltage generating circuit, a DAC and an interpolation operational amplifier is provided. The video signal transformation circuit transforms an input video signal into a transformed video signal with a higher bit depth. The transformed video signal comprises an upper n bits data and a lower m bits data, wherein n+m equals a bit depth of the transformed video signal. The reference voltage generating circuit generates reference voltages. The DAC selects a first reference voltage and a second reference voltage to interpolation operational amplifier from the reference voltages according to an upper n bits data of the transformed video signal. The interpolation operational amplifier outputs a driving voltage to display device according to the first reference voltage, the second reference voltage and the lower m bits data of the transformed video signal.

Abstract: During programming of storage elements, channel-to-floating gate coupling effects are compensated to avoid increased programming speed and threshold voltage distribution widening. In connection with a programming iteration, unselected bit lines voltages are stepped up to induce coupling to selected bit lines, and the amount of coupling which is experienced by the selected bit lines is sensed. When a program pulse is applied, voltages of the selected bit lines are set based on the amount of coupling. The bit line voltage is set higher when more coupling is sensed. The amount of coupling experience by a given selected bit line is a function of its proximity to unselected bit lines. One or more coupling thresholds can be used to indicate that a given selected bit line has one or two adjacent unselected bit lines, respectively.

Abstract: A semiconductor device includes: a first read/write amplifier; a second read/write amplifier; a first group of bit lines belonging to the first read/write amplifier; a second group of bit lines belonging to the second read/write amplifier and mixed with the first group of bit lines. One of the first group of bit lines and one of the second group of bit lines are selected in parallel. A reference potential is supplied to at least one of the first non-selected bit lines adjacent to the first selected bit line selected from the first group of bit lines, and to at least one of the second non-selected bit lines adjacent to the second selected bit line selected from the first group of bit lines. At least one of remaining ones of the first and second non-selected bit lines is set into a floating state.

Abstract: A system and method for physical shared channel allocation in a UMTS wireless communication system. A physical shared channel allocation message (220) is sent containing a plurality of occurrences of allocated physical resources and TFCS IDs; and, at a radio unit (130A), the sent physical shared channel allocation message is received and the plurality of occurrences of allocated physical resources and TFCS IDs contained therein are processed, thereby allowing a plurality of CCTrCHs to be allocated with a single physical shared channel allocation message (220). This provides the advantage that, using only a limited set of defined transport format combinations, a large portion of the physical resource can be allocated and used by a single UE using a single physical shared channel allocation message.

Abstract: Memory strings includes: a first semiconductor layer including a columnar portion extending in a direction perpendicular to a substrate; a first electric charge storage layer formed to surround a side surface of the columnar portion; and a first conductive layer formed to surround the first electric charge storage layer. First selection transistors includes: a second semiconductor layer extending upward from a top surface of the columnar portion; a second electric charge storage layer formed to surround a side surface of the second semiconductor layer; and a second conductive layer formed to surround the second electric charge storage layer. The non-volatile semiconductor storage device further includes a control circuit that causes, prior to reading data from a selected one of the memory strings, electric charges to be accumulated in the second electric charge storage layer of one of the first selection transistors connected to an unselected one of the memory strings.

Abstract: A transmitting system, a receiving system, and a method for processing a broadcast signal are disclosed. The receiving system comprises a tuner, a channel equalizer, a turbo decoder, a demultiplexer, a first error correction decoder, a block deinterleaver, and a second error correction decoder. The tuner receives a broadcast signal including a data group. The data group comprises mobile service data, regularly spaced known data sequences, and signaling data. The turbo decoder performs turbo decoding for the signaling data included in the channel equalized broadcast signal in the channel equalizer. The block deinterleaver performs block deinterleaving for the turbo-decoded FIC data in a block unit of TNoG (the number of all data groups assigned to one subframe)×51 bytes.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and a drive circuit. The stacked body is provided on the substrate. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. A through-hole is made in the stacked body to align in a stacking direction. The semiconductor pillar is buried in an interior of the through-hole. The charge storage film is provided between the electrode film and the semiconductor pillar. The drive circuit supplies a potential to the electrode film. The diameter of the through-hole differs by a position in the stacking direction. The drive circuit supplies a potential to reduce a potential difference with the semiconductor pillar as a diameter of the through-hole piercing the electrode film decreases.

Abstract: Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming, which may reduce or eliminate program disturb. The voltage applied to the gate of a select transistor of a NAND string may depend on the location of the selected word line. This could be either a source side or drain side select transistor. This may prevent or reduce program disturb that could result due to DIBL. This may also prevent or reduce program disturb that could result due to GIDL. A negative bias may be applied to the gate of a source side select transistor when programming at least some of the word lines. In one embodiment, progressively lower voltages are used for the gate of the drain side select transistor when programming progressively higher word lines.

Abstract: According to one embodiment, in the case of performing an operation for increasing a threshold voltage of a first transistor or a third transistor, a control circuit is configured to apply a first voltage to a bit line, and apply a second voltage greater than the first voltage to a gate of a second transistor, thereby rendering the second transistor in a conductive state to transfer the first voltage to a second semiconductor layer, and then apply a program voltage to a gate of the first transistor or the third transistor to store a charge in a second charge storage layer.

Abstract: A system for programming non-volatile storage is proposed that reduces the impact of interference from the boosting of neighbors. Memory cells are divided into two or more groups. In one example, the memory cells are divided into odd and even memory cells; however, other groupings can also be used. Prior to a first trigger, a first group of memory cells are programmed together with a second group of memory cells using a programming signal that increases over time. Subsequent to the first trigger and prior to a second trigger, the first group of memory cells are programmed separately from the second group of memory cells using a programming signal that has been lowered in magnitude in response to the first trigger. Subsequent to the second trigger, the first group of memory cells are programmed together with the second group of memory cells with the programming signal being raised in response to the second trigger.