Patents Examined by Parviz Hassanzadeh
  • Patent number: 10290473
    Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.
    Type: Grant
    Filed: January 6, 2014
    Date of Patent: May 14, 2019
    Assignees: AGC FLAT GLASS NORTH AMERICA, INC., ASAHI GLASS CO., LTD., AGC GLASS EUROPE
    Inventor: Peter Maschwitz
  • Patent number: 10279311
    Abstract: A chemical mechanical polishing (CMP) chamber is disclosed. The CMP chamber includes a chamber body, a door mounted on the chamber body and a chamber substructure being one selected from a group consisting of a moisture separator separating a moisture generated in the CMP chamber, a supplementary exhaust port, a transparent window mounted on the door, a sampling port mounted on the door, a sealing material including a metal frame, an o-ring for sealing the door and a combination thereof.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: May 7, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-I Peng, Hsiang-Pi Chang, Cary Chia-Chiung Lo, Teng-Chun Tsai, Kuo-Yin Lin, Chih-Yuan Yang
  • Patent number: 10274270
    Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a coupling each of the reservoirs to a common secondary reservoir. Heat transfer fluid is pumped from the secondary reservoir to either the hot or cold reservoir in response to a low level sensed in the reservoir. In an embodiment, both the hot and cold reservoirs are contained in a same platform as the secondary reservoir with the hot and cold reservoirs disposed above the secondary reservoir to permit the secondary reservoir to catch gravity driven overflow from either the hot or cold reservoir.
    Type: Grant
    Filed: October 8, 2012
    Date of Patent: April 30, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Fernando Silveira, Brad L. Mays
  • Patent number: 10273581
    Abstract: The present invention provides a method for cleaning a carbon coating film, which can clean the carbon coating film that is formed on each portion of a plasma CVD device, and provides the plasma CVD device. The plasma CVD device 1 includes: first and second sealing members 2a and 2b which are formed of insulators and seal both ends of a workpiece W or a dummy workpiece W?, respectively; an anode 3; decompression units 26 which decompress the inside of the workpiece W or the dummy workpiece W?; a source-gas supply unit 6 which supplies a source gas to the inside of the workpiece W; a power source 27; and an oxygen-gas supply unit 8 which supplies oxygen gas to the inside of the dummy workpiece W?.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: April 30, 2019
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Koji Kobayashi, Junya Funatsu
  • Patent number: 10276355
    Abstract: Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: April 30, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Carl Louis White, Mohith Verghese, Eric James Shero, Todd Robert Dunn
  • Patent number: 10269593
    Abstract: Apparatus for coupling a hot wire source to a process chamber is provided herein. In some embodiments, an apparatus for coupling a hot wire source to a process chamber may include: a housing having an open end and a through hole formed through a top and a bottom of the housing; and a filament assembly configured to be disposed within the housing, the filament assembly having a frame and a plurality of filaments disposed across the frame, wherein the plurality of filaments of the filament assembly are substantially parallel with the top and the bottom of the housing and at least a portion of the plurality of filaments are disposed within the through hole of the housing when the filament assembly is disposed within the housing.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: April 23, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Joe Griffith Cruz, Hanh Nguyen, Randy Vrana, Karl Armstrong
  • Patent number: 10269599
    Abstract: A semiconductor manufacturing apparatus includes a chamber, a view port window on a sidewall of the chamber and configured to receive an optical emission spectroscopy (OES); and an air distributor located between the view port window and an inner space of the chamber. The air distributor includes a hollow region aligned with the transparent window and configured to generate an air curtain in the hollow region to isolate the view port from the inner space.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: April 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chao-Tzung Tsai, Tzu Ken Lin, I-Chang Wu, Ching-Lun Lai, Li-Jia Liou
  • Patent number: 10264662
    Abstract: Provided is a capacitively coupled plasma processing apparatus which improves a controllability of the RF bias function and reliably prevents unwanted resonance from being generated on a RF transmission line between a counter electrode and ground potential to enhance reliability of the plasma process. In the capacitive coupled type plasma processing apparatus, three kinds of RF powers from a first, second and third RF power supplies (35, 36, 38) are superimposed and applied to susceptor (lower electrode) (16). In such a three-frequency superimposing and applying application scheme, the frequency-impedance characteristic around upper electrode (48) is considered to prevent a serial resonance from occurring on an RF transmission line around upper electrode (48) in consideration of all the low order frequencies of the IMD relevant to and affecting the plasma process.
    Type: Grant
    Filed: January 9, 2013
    Date of Patent: April 16, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Manabu Iwata, Naoyuki Umehara, Hiroki Endo
  • Patent number: 10262888
    Abstract: Apparatus and method for processing a plurality of substrates in a batch processing chamber are described. The apparatus comprises a susceptor assembly, a lift assembly and a rotation assembly. The susceptor assembly has a top surface and a bottom surface with a plurality of recesses in the top surface. Each of the recesses has a lift pocket in the recess bottom. The lift assembly including a lift plate having a top surface to contact the substrate. The lift plate is connected to a lift shaft that extends through the susceptor assembly and connects to a lift friction pad. The rotation assembly has a rotation friction pad that contacts the lift friction pad. The rotation friction pad is connected to a rotation shaft and can be vertically aligned with the lift friction pad.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: April 16, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kaushal Gangakhedkar, Joseph Yudovsky
  • Patent number: 10256123
    Abstract: Methods and systems for controlling temperatures in plasma processing chamber with a combination of proportional and pulsed fluid control valves. A heat transfer fluid loop is thermally coupled to a chamber component, such as a chuck. The heat transfer fluid loop includes a supply line and a return line to each of hot and cold fluid reservoirs. In an embodiment, an analog valve (e.g., in the supply line) is controlled between any of a closed state, a partially open state, and a fully open state based on a temperature control loop while a digital valve (e.g., in the return line) is controlled to either a closed state and a fully open state.
    Type: Grant
    Filed: October 15, 2012
    Date of Patent: April 9, 2019
    Assignee: Applied Materials, Inc.
    Inventor: Chetan Mahadeswaraswamy
  • Patent number: 10249511
    Abstract: An inductively coupled plasma processing apparatus comprises a vacuum chamber, a vacuum source, and a substrate support on which a semiconductor substrate is supported. A ceramic showerhead forms an upper wall of the vacuum chamber. The ceramic showerhead includes a gas plenum in fluid communication with a plurality of showerhead gas outlets for supplying process gas to the interior of the vacuum chamber, and a central opening configured to receive a central gas injector. A central gas injector is disposed in the central opening of the ceramic showerhead. The central gas injector includes a plurality of gas injector outlets for supplying process gas to the interior of the vacuum chamber. An RF energy source energizes the process gas into a plasma state to process the semiconductor substrate. The flow rate of the process gas supplied by the central gas injector and the flow rate of the process gas supplied by the ceramic showerhead can be independently controlled.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: April 2, 2019
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Saravanapriyan Sriraman, Alexander Paterson
  • Patent number: 10242848
    Abstract: A carrier ring for use in a chamber implemented for depositing films and chambers that use the carrier ring are provided. The carrier ring has an annular disk shape with an outer edge side and a wafer edge side. The carrier ring has a top carrier ring surface that extends between the outer edge side to the wafer edge side. The wafer edge side includes a lower carrier ring surface that is lower than the top carrier ring surface. The wafer edge side also includes a plurality of contact support structures. Each contact support structure is located at an edge of the lower carrier ring surface and has a height that is between the lower carrier ring surface and the top carrier ring surface, and the contact support structure has tapered edges and corners. A step is defined between the top carrier ring surface and the lower carrier ring surface, such that a top facing edge is disposed at a top of the step and a lower inner edge is disposed at the bottom of the step.
    Type: Grant
    Filed: December 12, 2014
    Date of Patent: March 26, 2019
    Assignee: Lam Research Corporation
    Inventors: Eli Jeon, Nick Ray Linebarger, Jr., Sirish Reddy, Alice Hollister, Rungthiwa Methaapanon
  • Patent number: 10236197
    Abstract: An apparatus and method for processing a substrate in a processing system containing a deposition chamber, a treatment chamber, and an isolation region, separating the deposition chamber from the treatment is described herein. The deposition chamber deposits a film on a substrate. The treatment chamber receives the substrate from the deposition chamber and alters the film deposited in the deposition chamber with a film property altering device. Processing systems and methods are provided in accordance with the above embodiment and other embodiments.
    Type: Grant
    Filed: January 5, 2015
    Date of Patent: March 19, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Karthik Janakiraman, Abhijit Basu Mallick, Hari K. Ponnekanti, Mandyam Sriram, Alexandros T. Demos, Mukund Srinivasan, Juan Carlos Rocha-Alvarez, Dale R. Dubois
  • Patent number: 10233539
    Abstract: Disclosed is a vapor deposition apparatus comprising an adsorption apparatus disposed in a vapor deposition cavity, wherein the adsorption apparatus comprising: a plurality of magnetic blocks arranged in a matrix disposed on a side of a substrate to be vapor deposited away from a metal mask plate, and a towing apparatus for adjusting each of the magnetic blocks to move up and down relative to the substrate to be vapor deposited. Such a vapor deposition apparatus may cause the metal mask plate to closely fit the substrate to be vapor deposited, such that a correct pattern will be formed when sub-pixel units are vapor deposited, and cause the magnetic fields of all the magnetic blocks to tend to be consistent, avoiding affecting the above-mentioned pattern by a deformation of the metal mask plate due to the inhomogeneity of the magnetic fields.
    Type: Grant
    Filed: August 28, 2014
    Date of Patent: March 19, 2019
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Lifei Ma, Peng Zhang
  • Patent number: 10217615
    Abstract: A plasma processing apparatus for processing semiconductor substrates comprises a plasma processing chamber in which a semiconductor substrate is processed. A process gas source is in fluid communication with the plasma processing chamber and is adapted to supply a process gas into the plasma processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the plasma processing chamber. Process gas and byproducts of the plasma processing are exhausted from the plasma processing chamber through a vacuum port. At least one component of the plasma processing apparatus comprises a laterally extending optical fiber beneath a plasma exposed surface of the component wherein spatial temperature measurements of the surface are desired to be taken, and a temperature monitoring arrangement coupled to the optical fiber so as to monitor temperatures at different locations along the optical fiber.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: February 26, 2019
    Assignee: LAM RESEARCH CORPORATION
    Inventor: Harmeet Singh
  • Patent number: 10208397
    Abstract: An apparatus is provided for depositing a thin film. The apparatus includes a chamber, a susceptor disposed in the chamber and supporting a substrate, a reflection housing disposed outside the chamber, a light source unit disposed in the reflection housing and irradiating light to the susceptor, and a light controlling unit blocking at least a portion of an irradiation path of the light to control an irradiation area of the light on the susceptor. At least a portion of the light controlling unit is disposed in the reflection housing.
    Type: Grant
    Filed: July 7, 2016
    Date of Patent: February 19, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Min Ryu, Sang Min Lee, Hee Jong Jeong, Chaeho Kim, Ji Su Son, Jaebong Lee, Juwan Lim, Jungwoo Choi
  • Patent number: 10204768
    Abstract: A plasma processing device capable of positioning a protective member for covering the upper surface of a peripheral edge portion of a substrate, with high accuracy. A plasma processing device has, a platen on which a substrate K is placed, a gas supply device, a plasma generating device, an RF power supply unit, an annular and plate-shaped protective member configured to be capable of being placed on a peripheral portion of the platen and which covers a peripheral edge portion of the substrate K, support members supporting the protective member, and a lifting cylinder lifting up and down the platen. At least three first protrusions which are engaged with the peripheral portion of the platen are formed on a pitch circle on the lower surface of the protective member and the center of the pitch circle is co-axial with the central axis of the protective member.
    Type: Grant
    Filed: November 25, 2010
    Date of Patent: February 12, 2019
    Assignee: SPP TECHNOLOGIES CO., LTD.
    Inventors: Yasuyuki Hayashi, Kenichi Tomisaka
  • Patent number: 10204795
    Abstract: A method and apparatus for processing a semiconductor substrate are described herein. A process system described herein includes a plasma source and a flow distribution plate. A method described herein includes generating fluorine radicals or ions, delivering the fluorine radicals or ions through one or more plasma blocking screens to a volume defined by the flow distribution plate and one of one or more plasma blocking screens, delivering oxygen and hydrogen to the volume, mixing the oxygen and hydrogen with fluorine radicals or ions to form hydrogen fluoride, flowing hydrogen fluoride through the flow distribution plate, and etching a substrate using bifluoride. The concentration of fluorine radicals or ions on the surface of the substrate is reduced to less than about two percent.
    Type: Grant
    Filed: April 12, 2016
    Date of Patent: February 12, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Jiayin Huang, Lin Xu, Zhijun Chen, Anchuan Wang
  • Patent number: 10192770
    Abstract: Apparatus and methods for processing a semiconductor wafer including a susceptor assembly with recesses comprising at least three lift pins. The lift pins include a sleeve with a spring and pin positioned therein. The spring and pin elevate the wafer to a position where the wafer can be pre-heated and, upon compression, lowers the wafer to a processing position.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: January 29, 2019
    Assignee: Applied Materials, Inc.
    Inventor: Joseph Yudovsky
  • Patent number: 10153137
    Abstract: The inventive concepts provide a substrate treating apparatus. The substrate treating apparatus includes a process chamber in which a treatment space is provided, a support unit supporting a substrate in the process chamber, a gas supply unit supplying a gas into the process chamber, and a plasma source generating plasma from the gas. The support unit includes a support plate on which a substrate is loaded, a focus ring disposed to surround the support plate, an electric field adjusting ring disposed under the focus ring, and an actuator vertically moving the electric field adjusting ring.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: December 11, 2018
    Assignee: Semes Co., Ltd.
    Inventors: Seok Won Hwang, Kisang Eum, Sun Wook Jung