Abstract: Disclosed is a vapor deposition apparatus comprising an adsorption apparatus disposed in a vapor deposition cavity, wherein the adsorption apparatus comprising: a plurality of magnetic blocks arranged in a matrix disposed on a side of a substrate to be vapor deposited away from a metal mask plate, and a towing apparatus for adjusting each of the magnetic blocks to move up and down relative to the substrate to be vapor deposited. Such a vapor deposition apparatus may cause the metal mask plate to closely fit the substrate to be vapor deposited, such that a correct pattern will be formed when sub-pixel units are vapor deposited, and cause the magnetic fields of all the magnetic blocks to tend to be consistent, avoiding affecting the above-mentioned pattern by a deformation of the metal mask plate due to the inhomogeneity of the magnetic fields.

Abstract: A plasma processing apparatus for processing semiconductor substrates comprises a plasma processing chamber in which a semiconductor substrate is processed. A process gas source is in fluid communication with the plasma processing chamber and is adapted to supply a process gas into the plasma processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the plasma processing chamber. Process gas and byproducts of the plasma processing are exhausted from the plasma processing chamber through a vacuum port. At least one component of the plasma processing apparatus comprises a laterally extending optical fiber beneath a plasma exposed surface of the component wherein spatial temperature measurements of the surface are desired to be taken, and a temperature monitoring arrangement coupled to the optical fiber so as to monitor temperatures at different locations along the optical fiber.

Abstract: An apparatus is provided for depositing a thin film. The apparatus includes a chamber, a susceptor disposed in the chamber and supporting a substrate, a reflection housing disposed outside the chamber, a light source unit disposed in the reflection housing and irradiating light to the susceptor, and a light controlling unit blocking at least a portion of an irradiation path of the light to control an irradiation area of the light on the susceptor. At least a portion of the light controlling unit is disposed in the reflection housing.

Abstract: A plasma processing device capable of positioning a protective member for covering the upper surface of a peripheral edge portion of a substrate, with high accuracy. A plasma processing device has, a platen on which a substrate K is placed, a gas supply device, a plasma generating device, an RF power supply unit, an annular and plate-shaped protective member configured to be capable of being placed on a peripheral portion of the platen and which covers a peripheral edge portion of the substrate K, support members supporting the protective member, and a lifting cylinder lifting up and down the platen. At least three first protrusions which are engaged with the peripheral portion of the platen are formed on a pitch circle on the lower surface of the protective member and the center of the pitch circle is co-axial with the central axis of the protective member.

Abstract: A method and apparatus for processing a semiconductor substrate are described herein. A process system described herein includes a plasma source and a flow distribution plate. A method described herein includes generating fluorine radicals or ions, delivering the fluorine radicals or ions through one or more plasma blocking screens to a volume defined by the flow distribution plate and one of one or more plasma blocking screens, delivering oxygen and hydrogen to the volume, mixing the oxygen and hydrogen with fluorine radicals or ions to form hydrogen fluoride, flowing hydrogen fluoride through the flow distribution plate, and etching a substrate using bifluoride. The concentration of fluorine radicals or ions on the surface of the substrate is reduced to less than about two percent.

Abstract: Apparatus and methods for processing a semiconductor wafer including a susceptor assembly with recesses comprising at least three lift pins. The lift pins include a sleeve with a spring and pin positioned therein. The spring and pin elevate the wafer to a position where the wafer can be pre-heated and, upon compression, lowers the wafer to a processing position.

Abstract: The inventive concepts provide a substrate treating apparatus. The substrate treating apparatus includes a process chamber in which a treatment space is provided, a support unit supporting a substrate in the process chamber, a gas supply unit supplying a gas into the process chamber, and a plasma source generating plasma from the gas. The support unit includes a support plate on which a substrate is loaded, a focus ring disposed to surround the support plate, an electric field adjusting ring disposed under the focus ring, and an actuator vertically moving the electric field adjusting ring.

Abstract: An infiltration device comprises a heating room, a rotary tray, a rotary bracket, a material box, an elevating mechanism and a transmission device, wherein the heating room has an annular groove, and the rotary tray is arranged below an opening end at a lower end of the heating room; the rotary bracket is installed on the rotary tray; the material box is arranged on the rotary bracket; the rotary tray and the material box can move upward and downward under the action of the elevating mechanism; the rotary bracket can spin in the annular groove and revolve around a central axis of the rotary tray under the action of the transmission device. The infiltration method provided by the invention comprises the steps of charging, vacuum-pumping, high temperature infiltrating, cooling, discharging, etc.

Abstract: Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results.

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

Abstract: An apparatus and method for improving the temperature uniformity of a workpiece during processing is disclosed. The apparatus includes a ring heater assembly disposed along the outer circumference of the platen. The ring heater assembly includes heating elements disposed therein or thereon, where these heating elements create heat, which serves to warm the outer edge of the workpiece. In some embodiments, the ring heater assembly extends beyond the edge of the workpiece and may be exposed to the ion beam.

Abstract: A plasma processing method for performing a plasma process on a substrate in a plasma processing apparatus is provided. The plasma processing method comprises: a sampling-average-value calculating process of sampling voltage detection signals and electric current detection signals and calculating an average value of these signals during a first monitoring time; a moving-average-value calculating process of calculating a moving average value of the voltage detection signals and the electric current detection signals; a load impedance-measurement-value calculating process of calculating a measurement value of a load impedance with respect to a first high frequency power supply; and a reactance control process of controlling a reactance of a variable reactance element such that the measurement value of the load impedance is equal or approximate to a preset matching point corresponding to impedance on the side of the first high frequency power supply.

Abstract: A method and apparatus disclosed herein apply to processing a substrate, and more specifically to a method and apparatus for improving photolithography processes. The apparatus includes a chamber body, a substrate support disposed within the chamber body, and an electrode assembly. The substrate support has a top plate disposed above the substrate support, a bottom plate disposed below the substrate support, and a plurality of electrodes connecting the top plate to the bottom plate. A voltage is applied to the plurality of electrodes to generate an electric field. Methods for exposing a photoresist layer on a substrate to an electric field are also disclosed herein.

Abstract: Embodiments of the present invention relate to apparatus for improving uniformity and film stress of films deposited during plasma process of a substrate. According to embodiments, the apparatus includes a tuning electrode and/or a tuning ring electrically coupled to a variable capacitor for tuning high frequency RF impedance of the electrode and a low frequency RF termination to ground. The plasma profile and resulting film thickness can be controlled by adjusting the capacitance of the variable capacitor and the resulting impedance of the tuning electrode. The film stress of the film deposited on the substrate can be controlled, i.e., increased, by terminating the low frequency RF during processing.

Abstract: A substrate processing apparatus includes: a cylindrical shaped chamber configured to accommodate a substrate; a movable electrode capable of moving along a central axis of the cylindrical shaped chamber within the cylindrical shaped chamber; a facing electrode facing the movable electrode within the cylindrical shaped chamber; and an expansible/contractible partition wall connecting the movable electrode with an end wall on one side of the cylindrical shaped chamber. A high frequency power is applied to a first space between the movable electrode and the facing electrode, a processing gas is introduced thereto, and the movable electrode is not in contact with a sidewall of the cylindrical shaped chamber, a first dielectric member is provided at the cylindrical shaped chamber's sidewall facing the movable electrode, and an overlap area between the first dielectric member and a side surface of the movable electrode is changed according to movement of the movable electrode.

Abstract: An apparatus for in situ fabrication of multilayer heterostructures is provided comprising a first vacuum chamber adapted for atomic layer deposition and comprising a first stage docking assembly configured to dock a detachable stage configured to support a substrate; a second vacuum chamber adapted for ultra-high vacuum physical or chemical vapor deposition and comprising a second stage docking assembly configured to dock the detachable stage; a load lock vacuum chamber between the first and second vacuum chambers and comprising a third stage docking assembly configured to dock the detachable stage, the load lock vacuum chamber coupled to the first vacuum chamber via a first shared valve and coupled to the second vacuum chamber via a second shared valve; and a substrate transport vacuum chamber comprising a substrate transfer device, the substrate transfer device configured to detachably couple to the detachable stage and to transfer the substrate supported by the detachable stage in situ between the first v

Abstract: Provided is a plasma processing apparatus in which a variable inductor is installed in series with a variable condenser in a second power feeding unit that distributes and supplies high-frequency power to an inner upper electrode 56. As a result, a characteristic around a resonance point may be broad in a capacitance-outer/inner power distribution ratio of the variable condenser (varicon). Therefore, an area around the resonance point may be stably used as a controllable area within a variable range of varicon capacitance.

Abstract: Apparatus for providing plasma to a process chamber may include an electrode; a first ground plate disposed beneath the electrode defining a cavity therebetween; an insulator disposed between the electrode and first ground plate to prevent direct contact therebetween; a second ground plate disposed beneath the first ground plate defining a first channel; a plurality of first through holes through the first ground plate to fluidly couple the channel and cavity; a first gas inlet coupled to the first channel; a third ground plate disposed beneath the second ground plate defining a second channel; a plurality of conduits through the ground plates to fluidly couple the cavity to an area beneath the third ground plate; a plurality of gas outlet holes through the third ground plate to fluidly couple the second channel to the area beneath the third ground plate; and a second gas inlet coupled to the second channel.

Abstract: A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma includes a DC power supply configured to apply a DC voltage to the upper electrode; a ground electrode connected to the DC power supply; and an annular shield member provided outside the ground electrode. A groove is formed into a downward recess at an outer peripheral portion of the ground electrode, and an upper end of the shield member is positioned above an upper end of the peripheral portion of the ground electrode. A protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode.

Abstract: An apparatus for coating a film in a container and a method for coating a film are provided. The apparatus includes a cylindrical housing having a containing space penetrating through both ends thereof; a first arc-shaped electrode and a second arc-shaped electrode surrounding and covering an outer side of the cylindrical housing with a gap formed between the first and second arc-shaped electrodes such that the first arc-shaped electrode is free from electrically connected to the second arc-shaped electrode; a first conductive ring and a second conductive ring surrounding on the first and second arc-shaped electrodes, respectively; an upper supporting seat and a lower supporting seat disposed at the both ends of the cylindrical housing, respectively, to form a sealed environment for the containing space; and a valve component furnished at the upper supporting seat and inserted into the container for providing a processing gas in a film-coating process.