Abstract: A semiconductor device includes a first semiconductor die, a first encapsulant surrounding the first semiconductor die, and a first redistribution structure formed on the first semiconductor die and the first encapsulant. The semiconductor device further includes a second semiconductor die, a second encapsulant surrounding the second semiconductor die, and a second redistribution structure formed on the second semiconductor die and the second encapsulant. The semiconductor device also include a conductive via electrically connecting the first redistribution structure to the second redistribution structure.

Abstract: The present disclosure generally relates to the field of display technology, and in particular, to an array substrate, a method of fabricating the array substrate, a display panel including the army substrate, and a method of fabricating the display panel. An array substrate includes: a base substrate; an electrode layer provided on the substrate; a first pixel defining layer on the electrode layer defining a plurality of pixel regions; and a second pixel defining layer on the first pixel defining layer, wherein the second pixel defining layer has a plurality of first grooves and a plurality of second grooves alternately arranged between two adjacent rows of pixel regions.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method includes forming a plurality of bond pad structures over an interconnect structure on a front-side of a semiconductor body. The plurality of bond pad structures respectively have a titanium contact layer. The interconnect structure and the semiconductor body are patterned to define trenches extending into the semiconductor body. A dielectric fill material is formed within the trenches. The dielectric fill material is etched to expose the titanium contact layer prior to bonding the semiconductor body to a carrier substrate. The semiconductor body is thinned to expose the dielectric fill material along a back-side of the semiconductor body and to form a plurality of integrated chip die. The dielectric fill material is removed to separate the plurality of integrated chip die.

Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

Abstract: A solid-state imaging device includes a pixel having a photoelectric conversion element which generates a charge in response to incident light, a first transfer gate which transfers the charge from the photoelectric conversion element to a charge holding section, and a second transfer gate which transfers the charge from the charge holding section to a floating diffusion. The first transfer gate includes a trench gate structure having at least two trench gate sections embedded in a depth direction of a semiconductor substrate, and the charge holding section includes a semiconductor region positioned between adjacent trench gate sections.

Abstract: An organic light emitting diode display includes a first electrode, a pixel defining layer positioned on the first electrode and including a first opening having a first polygonal shape opening the first electrode, and a first organic emission layer positioned on the pixel defining layer through the first electrode corresponding to the first opening and including a first chamfer adjacent to a corner of the first opening.

Abstract: A variable resistance memory device is provided including a plurality of lower electrodes disposed on a substrate. A plurality of variable resistors are disposed on the plurality of lower electrodes. A plurality of upper electrodes are disposed on the plurality of variable resistors. An interlayer insulating layer fills a space in the plurality of variable resistors. An anti-oxidation layer is disposed between the plurality of variable resistors and the interlayer insulating layer. The anti-oxidation layer covers side surfaces of the plurality of variable resistors, and the anti-oxidation layer comprises silicon and/or carbon.

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Abstract: Disclosed are a display panel and a display device. The display panel includes a display area and an opening area, where the opening area is configured to accommodate an optical component, and the display area at least partially surrounds the opening area; where the display area includes edge pixel defining structures and conventional pixel defining structures, and the edge pixel defining structures are closer to the opening area than the conventional pixel defining structures; where a reflectivity of each edge pixel defining structure is greater than a reflectivity of each conventional pixel defining structure.

Abstract: A flexible display and manufacturing method thereof are disclosed. In one aspect, the flexible display includes a flexible substrate including a bending area, an insulating layer disposed on the flexible substrate, and at least one groove in the insulating layer within the bending area. The flexible display also includes a stress relaxation layer disposed on the at least one groove and a plurality of wires formed over the insulating layer and the stress relaxation layer.

Abstract: A method for manufacturing a heat releasing semiconductor chip package includes attaching a first surface of a semiconductor chip onto an insulating film, injecting a coating liquid onto a second surface of the semiconductor chip to form a liquefied coating layer and curing the liquefied coating layer to form a heat releasing layer. The coating liquid includes a liquefied molding compound for heat releasing and fine alumina particles. Therefore, the heat releasing semiconductor chip package and method for manufacturing the semiconductor chip package form a heat releasing layer in direct contact with the semiconductor chip to maximize a heat releasing effect.

Abstract: A spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a nonmagnetic metallic assist plate, and a magnetic tunnel junction located between the first two terminal selector element and the nonmagnetic metallic assist plate, and a circuit selection element selected from a transistor or a second two terminal selector element electrically connected to the nonmagnetic metallic assist plate of the SOT MRAM cell.

Abstract: A pixel arrangement structure are provided, which includes a plurality of repeating units. Each of the plurality of repeating units includes two first sub-pixels, one second sub-pixel, and one third sub-pixel. Each of the first sub-pixel, the second sub-pixel and the third sub-pixel includes a pixel defining layer, the pixel defining layer includes a pixel defining layer opening to define an effective light emitting region of each sub-pixel; a plurality of first sub-pixels are arranged along the second direction to form a plurality of first sub-pixel groups, orthographic projections of pixel defining layer openings of the first sub-pixels in adjacent ones of the plurality of first sub-pixel groups on a straight line parallel to the second direction do not overlap each other.

Abstract: A GaN diode EMP arrestor exhibits breakdown in <10 ns at reverse-bias voltage >20 kV. Additionally, the arrestor exhibits avalanche ruggedness at 1 kA/cm2 in a 1 mm2 device (i.e. 10 A absolute current) over a period of 500 ns following the onset of breakdown. Finally, the specific on-resistance in the forward direction is <20 m? cm2.

Abstract: A two transistor-one capacitor memory cell comprises first and second transistors laterally displaced relative one another. A capacitor is above the first and second transistors. The capacitor comprises a conductive first capacitor node directly above and electrically coupled to a first node of the first transistor. A conductive second capacitor node is directly above the first and second transistors and is electrically coupled to a first node of the second transistor. A capacitor insulator is between the first and second capacitor nodes. The second capacitor node comprises an elevationally-extending conductive pillar directly above the first node of the second transistor. The conductive pillar has an elevationally outer portion that is of four-sided diamond shape in horizontal cross-section. Other memory cells, including arrays of memory cells are disclosed as are methods.

Abstract: A method of manufacturing a hybrid package including a flat package and a Wafer Level Chip Scale Package (WLCSP) is disclosed. The method includes fabricating a strip including a plurality of flat packages attached to each other via metal pins, turning the strip upside down, applying a layer of a thermal interface material (TIM) on each of the flat packages while the each of the flat packages is turned upside down, mounting the WLCSP on the layer of the TIM such that a top side of the WLCSP is interfaced with the layer of the TIM, curing the layer of the TIM and singulating each of the flat packages by cutting the metal pins and bending the metal pins.

Abstract: An integrated semiconductor device having a substrate, a bottom source or drain (S/D) structure formed on the substrate. In addition, the device includes a fin extending from the bottom S/D structure and a gate formed around the fin. A top S/D structure is formed on top of the fin. The top S/D structure includes a recessed top S/D surface and a silicide layer covering a top portion of the recess. A contact is communicatively coupled to a surface of the silicide layer of the recessed top S/D surface of the top S/D structure.

Abstract: A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.