Abstract: An acoustic wave device includes a (111)-oriented silicon substrate, a silicon nitride layer, a silicon oxide layer, a lithium tantalate layer, and an IDT electrode on the lithium tantalate layer. When the wavelength determined by the electrode finger pitch of the IDT electrode is ?, the thickness of the silicon nitride layer, SiN [?], the thickness of the silicon oxide layer, SiO2 [?], the thickness of the lithium tantalate layer, LT [?], and one of the Euler angles of the lithium tantalate layer, LT? [deg.], are thicknesses and an angle in ranges in which the phase of a first higher-order mode is about ?20° or less.

Abstract: An interdigitated RF filter. The interdigitated RF filter includes input fingers connected to an input node and output fingers connected to an output node where at least one input finger is connected the output node or at least one output finger is connected to the input node. The described interdigitated RF filter can be implemented in various configurations such as series, shunt, ladder or a combination thereof.

Abstract: A bandpass acoustic wave filter device includes an IDT electrode and a dielectric film disposed on a piezoelectric substrate including a LiNbO3 layer, and an acoustic wave resonator is defined by the IDT electrode. The acoustic wave resonator utilizes the Rayleigh wave, and a response of an SH wave excited by the acoustic wave resonator is outside a pass band of the acoustic wave filter device.

Abstract: A low-pass filter includes first to third inductors and a capacitor. A first inductor-forming conductor layer constituting at least a part of each of the first and second inductors and a second inductor-forming conductor layer including first and second portions constituting first and second inductor portions of the third inductor are connected by a plurality of first through holes. The first portion and a capacitor-forming conductor layer constituting a part of the capacitor are connected by a plurality of second through holes. The second portion and the capacitor-forming conductor layer are connected by a plurality of third through holes.

Abstract: The present disclosure provides a radio frequency duplexer circuit and a radio frequency substrate. The radio frequency duplexer circuit includes a first terminal, a second terminal, a third terminal, a low-pass filter, and a high-pass filter. The low-pass filter includes N first filter sub-circuits coupled in series and a first tuning sub-circuit. Among the N first filter sub-circuits coupled in series, a first end of a 1st first filter sub-circuit is coupled to the first terminal, and a second end of a Nth first filter sub-circuit is coupled to the second terminal. The high-pass filter includes M second filter sub-circuits coupled in series and a second tuning sub-circuit. Among the M second filter sub-circuits coupled in series, a first end of a 1st second filter sub-circuit is coupled to the first terminal, and a second end of a Mth second filter sub-circuit is coupled to the third terminal.

Abstract: A measuring system for measuring the displacement of at least one point of a bridge, wherein the bridge has a resonance frequency included in the frequency band [fl, fh] where fl<fh, the measuring system including: a geophone adapted to be applied in the at least one point of the bridge, the geophone having a resonance frequency fr greater than fh and a frequency response for f<fh substantially equal to that of a double shunt; an analogue compensation device connected in series to the geophone and having a frequency response equal to that of a double integrator in the frequency band [fl, fh]; an analogue integrator device connected in series to the analogue compensation device; and an analogue/digital converter device connected in series to the analogue integrator device, the analogue/digital converter device being adapted to convert the output signal from the analogue integrator device into a digital signal.

Abstract: An apparatus includes a piezoelectric thin film suspended above a carrier substrate, where the piezoelectric thin film is of one of lithium niobate (LiNbO3) or lithium tantalate (LiTaO3) adapted to propagate an acoustic wave in a Lamb wave mode excited by a component of an electric field that is oriented in a longitudinal direction along a length of the piezoelectric thin film. A signal electrode is disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction. A ground electrode disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction, where the ground electrode is separated from the signal electrode by a gap comprising a longitudinal distance and in which the acoustic wave resonates. A release window is formed within the piezoelectric thin film adjacent to the ground electrode.

Abstract: Filter devices are provided herein. A filter device includes a plurality of low-band resonators and a plurality of high-band resonators. In some embodiments, adjacent ones of the plurality of high-band resonators are spaced farther apart from each other than adjacent ones of the plurality of low-band resonators are spaced apart from each other.

Abstract: An improved SAW (SAWR) resonator having an improved power durability and heat resistance and a protection to prevent device failure is provided. The SAW resonator has a carrier substrate (S) and an electrode structure (ES, EF) on a piezoelectric material (PM, PL). Further, the resonator has a shunt path (PCPP) parallel to the electrode structure and provided to enable an RF signal to bypass the electrode structure. The shunt path has a temperature dependent conductance with negative temperature coefficient of resistance.

Abstract: A surface acoustic wave (SAW) resonator comprises a plurality of interdigital transducer (IDT) electrodes disposed on a multilayer piezoelectric substrate including a layer of piezoelectric material having a lower surface bonded to an upper surface of a layer of a dielectric material. The dielectric material has a lower surface bonded to an upper surface of a carrier substrate. The plurality of IDT electrodes include an upper layer and a lower layer. The upper layer is formed of a material having a higher conductivity than the lower layer. The lower layer is formed of a material having a higher density than the upper layer to provide for reduction in size of the SAW resonator.

Abstract: An inductive filtering device includes a plurality of grouped electrical conductors and at least two toric magnetic cores, each formed around a central void, the two magnetic cores having different magnetic lengths, the electrical conductor being wound together around both magnetic cores by passing through the central voids of both magnetic cores.

Abstract: A thin-film filter may include a monolithic substrate and a patterned conductive layer formed over the monolithic substrate. The patterned conductive layer may include at least one thin-film inductor. The thin-film filter may have a power capacity that is greater than about 25 W. In some embodiments, the thin-film inductor(s) may be connected between the input port and the output port. A heat sink terminal may be exposed along the bottom surface of thin-film filter. In some embodiments, the heat sink terminal may have an exposed heat sink area, and the bottom surface of the thin-film filter has an area that is less than 20 times larger than the exposed heat sink area.

Abstract: A composite electronic component includes a multilayered body in which a plurality of dielectric layers and a plurality of conductor layers are alternately stacked, a first resonant circuit including a first line and a first capacitor, the first line being formed of one or more first conductor layers of the conductor layers, the first capacitor including a first electrode formed of a plurality of second conductor layers of the conductor layers, and a second resonant circuit including a second line and a second capacitor, the second line being formed of one or more third conductor layers of the conductor layers, the second capacitor including a second electrode formed of the second conductor layers, the second conductor layers being located between the one or more first conductor layers and the one or more third conductor layers.

Abstract: A filter device includes a filter including at least one inductor and at least one capacitor, and a stack of a plurality of dielectric layers and a plurality of conductor layers. The plurality of dielectric layers include at least one first dielectric layer formed of a first dielectric material and at least one second dielectric layer formed of a second dielectric material. The plurality of conductor layers include at least one first conductor layer in contact with the at least one first dielectric layer, and at least one second conductor layer in contact with the at least one second dielectric layer. The temperature coefficient of resonant frequency of the first dielectric material has a positive value. The temperature coefficient of resonant frequency of the second dielectric material has a negative value.

Abstract: A branching filter includes a common port, a first signal port, a second signal port, a first filter, which is provided between the common port and the first signal port, that selectively passes a signal of a frequency within a first passband, a second filter, which is provided between the common port and the second signal port, that selectively passes a signal of a frequency within a second passband different from the first passband, and a capacitor that has a first end and a second end and connects the first filter and the second filter.

Abstract: An LC filter arrangement includes a filter capacitor that connects the first output terminal to the second output terminal, a magnetic core, and a choke having a plurality of turns surrounding the magnetic core, and a first choke terminal and a second choke terminal. Each of the turns is formed by a separate conductor segment, at least partially surrounding the magnetic core. The LC filter arrangement is mounted on a circuit board and is electrically connected to a conductor track of the circuit board.

Abstract: Aspects of this disclosure relate to an acoustic wave resonator with transverse mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.

Abstract: An elongate flexible waveguide section for radio frequency signals is provided, wherein the waveguide section is corrugated in the longitudinal direction, and the waveguide section is at least partially corrugated in a circumferential direction perpendicular to the longitudinal direction. Also provided is an apparatus for connecting a VHTS antenna system to a spacecraft.

Abstract: A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; a metal pad connected to the first electrode and the second electrode; and a protective layer disposed to cover at least the metal pad.

Abstract: The present disclosure relates to a spin wave switch and a filter based on a magnonic crystal. According to one embodiment, a magnonic crystal device may include a ferromagnetic layer and an antiferromagnetic planar periodic structure set on the ferromagnetic layer. The magnonic crystal device of the present disclosure may be used as a spin wave switch to effectively regulate and control the transmission coefficient of the spin wave, or may be used as a spin wave filter to filter the spin wave of a specific frequency.